Surface States Enhanced Dynamic Schottky Diode Generator with Extremely High Power Density Over 1000 W m-2

Edge-enhanced super microgenerator based on a two-dimensional Schottky junction

Super microgenerator (SMG) refers to a generator that can efficiently convert extremely weak external stimuli into electrical energy and has a small size, high power density and long lifespan, offer ground-breaking solutions for powering wearable devices, wireless distributed sensors and implanted medical equipment. However, the friction and wear between the interfaces of ordinary microgenerator results in an extremely low lifespan. Here, we present a prototype of SMGs based on a 2D-2D (graphite-MoS2) Schottky contact in the state of structural superlubricity (no wear and nearly zero friction between two contacted solid surfaces). What is even more interesting is when the graphite flake is slid from the bulk to the edge of MoS2, the output current will enhance from 31 to 56 A m-2. Through the I-V curve measurement, we found that the conductive channel across the junction can be activated and further enhanced at the edge of MoS2compare to bulk, which provide the explanation for the above-mentioned edge enhancement of power generation. Above results provide the design principles of high-performance SMGs based on 2D-2D Schottky junctions.

Tribovoltaic Effect: Origin, Interface, Characteristic, Mechanism & Application

Tribovoltaic effect is a phenomenon of the generation of direct voltage and current by the mechanical friction on semiconductor interface, which exhibits a brand-new energy conversion mechanism by the coupling of semiconductor and triboelectrification. Here, the origin, interfaces, characteristics, mechanism, coupling effect and application of the tribovoltaic effect is summarized and reviewed. The tribovoltaic effect is first proposed in 2019, which has developed in various forms tribovoltaic nanogenerator (TVNG) including metal-semiconductor, metal-insulator-semiconductor, semiconductor-semiconductor, liquid-solid and flexible interfaces. Compared with triboelectric nanogenerator, the TVNG has the characteristics of direct-current, high current density (mA-A cm-2) and low impedance (Ω-kΩ). The two mainstream views on the tribovoltaic generation mechanism, one dominated by built-in electric fields and the other dominated by interface electric fields, have been elaborated and summarized in detail. The tribo-photovoltaic effect and tribo-thermoelectric effect are also discovered and introduced because they can easily interact with other multi-physical field effects. The TVNGs are suitable for making energy harvesting and self-powered sensing devices for micro-nano energy applications. This paper not only revisit the development of the tribovoltaic effect, but also makes prospects for mechanism research, device fabrication and integrated application, which can accelerate the evolution of smart wearable electronics and intelligent industrial components.

An Ultrahigh Power Density and Ultralow Wear GaN-Based Tribovoltaic Nanogenerator for Sliding Ball Bearing as Self-Powered Wireless Sensor Node

The tribovoltaic effect is regarded as a newly discovered semiconductor effect for mechanical-to-electrical energy conversion. However, tribovoltaic nanogenerators (TVNGs) are widely limited by low output power and poor wear resistance for device integration and application. Here, this work invents a TVNG using a ball-on-disk structure composed of gallium nitride (GaN) and steel ball. It exhibits an open-circuit voltage exceeding 130 V and an ultrahigh normalized average power density of 24.6 kW m-2 Hz-1 , which is a 282-fold improvement compared to previous works. Meanwhile, this TVNG reaches an ultralow wear rate of 5 × 10-7 mm3 N-1 m-1 at a maximum contact pressure of 906.6 MPa, surpassing the TVNG composed of Si by three orders of magnitude due to the local concentrated injection of frictional energy. Based on the TVNG, this work constructs the first tribovoltaic bearing and achieves sensing signal transmission within 16 s (300 rpm) by integrating a management circuit, a transmission module, a relay, and receiving terminals, which enables the monitoring of ambient pressure and temperature. This work realizes a GaN-based TVNG with high-performance and low wear simultaneously, demonstrating great potential for intelligent components and self-powered sensor nodes in the industrial Internet of Things.

Tribovoltaic Performance of TiO2 Thin Films: Crystallinity, Contact Metal, and Thermoelectric Effects

Tribovoltaic devices are attracting increasing attention as motion-based energy harvesters due to the high local current densities that can be generated. However, while these tribovoltaic devices are being developed, debate remains surrounding their fundamental mechanism. Here, we fabricate thin films from one of the world's most common oxides, TiO₂, and compare the tribovoltaic performance under contact with metals of varying work functions, contact areas, and applied pressure. The resultant current density shows little correlation with the work function of the contact metal and a strong correlation with the contact area. Considering other effects at the metal-semiconductor interface, the thermoelectric coefficients of different metals were calculated, which showed a clear correlation with the tribovoltaic current density. On the microscale, molybdenum showed the highest current density of 192 mA cm^-2. This work shows the need to consider a variety of mechanisms to understand the tribovoltaic effect and design future exemplar tribovoltaic devices.

Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process

The excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the static diode, which may bring a subverting insight of insulators. Herein, we discovered insulators could be conductive under the framework of DD; the HC process inside the rebounding procedure caused by the disappearance and reestablishment of the built-in electric field at the interface of insulator/semiconductor heterostructure is the main generation mechanism. This type of DD can response fast up to 1 μs to mechanical excitation with an output of ~10 V, showing a wide band frequency response under different input frequencies from 0 to 40 kHz. It can work under extreme environments; various applications like underwater communication network, self-powered sensor/detector in the sea environment, and life health monitoring can be achieved.

Coexistence of Contact Electrification and Dynamic p-n Junction Modulation Effects in Triboelectrification

The triboelectric effect occurs when two dissimilar materials are in physical contact, attributed to the combination of contact electrification (CE) and electrostatic induction. It has been extensively explored for the development of high-performance triboelectric nanogenerators (TENGs). In this paper, we report on, besides the CE-related charge generation, an additional charge generation phenomenon associated with the modulation of the p-n junction when two semiconductor materials [methylammonium lead iodide (MAPI) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)] are put in contact and separated dynamically. The electrical outputs generated by the CE effect are determined by the surface potential difference between the two friction materials, while the ones induced by the p-n junction modulation are determined by the dynamic variations in the depletion widths of the two semiconductor friction materials. The outputs generated by the CE effect and the p-n junction effect are well separated in time scale; the p-n junction modulation contributes ∼20% of the total charge generated and could be varied by changing the chemical composition of the semiconductors. The results may provide an alternative method for the development of high-performance TENGs by utilizing this additional p-n junction modulation effect.

Hot Carrier Transport and Carrier Multiplication Induced High Performance Vertical Graphene/Silicon Dynamic Diode Generator

Dynamic semiconductor diode generators (DDGs) offer a potential portable and miniaturized energy source, with the advantages of high current density, low internal impedance, and independence of the rectification circuit. However, the output voltage of DDGs is generally as low as 0.1-1 V, owing to energy loss during carrier transport and inefficient carrier collection, which requires further optimization and a deeper understanding of semiconductor physical properties. Therefore, this study proposes a vertical graphene/silicon DDG to regulate the performance by realizing hot carrier transport and collection. With instant contact and separation of the graphene and silicon, hot carriers are generated by the rebounding process of built-in electric fields in dynamic graphene/silicon diodes, which can be collected within the ultralong hot electron lifetime of graphene. In particular, monolayer graphene/silicon DDG outputs a high voltage of 6.1 V as result of ultrafast carrier transport between the monolayer graphene and silicon. Furthermore, a high current of 235.6 nA is generated due to the carrier multiplication in graphene. A voltage of 17.5 V is achieved under series connection, indicating the potential to supply electronic systems through integration design. The graphene/silicon DDG has applications as an in situ energy source for harvesting mechanical energy from the environment.

Semiconductor Contact-Electrification-Dominated Tribovoltaic Effect for Ultrahigh Power Generation

The semiconductor direct-current triboelectric nanogenerator (SDC-TENG) based on the tribovoltaic effect is promising for developing a new semiconductor energy technology with high power density. Here, the first SDC-TENG built using gallium nitride (GaN) and bismuth telluride (Bi₂ Te₃ ) for ultrahigh-power generation is reported. During the friction process, an additional interfacial electric field is formed by continuous contact electrification (CE), and abundant electron-hole pairs are excited and move directionally to form a junction current that is always internally from Bi₂ Te₃ to GaN, regardless of the semiconductor type. The peak open-circuit voltage can reach up to 40 V and the power density is 11.85 W m^-2 (average value is 9.23 W m^-2 ), which is approximately 200 times higher than that of previous centimeter-level SDC-TENGs. Moreover, compared to traditional polymer TENGs under the same conditions, the average power density is remarkably improved by over 40 times. This study provides the first evidence of CE on the tribovoltaic effect and sets the normalized power density record for TENGs, which demonstrates a great potential of the tribovoltaic effect for energy harvesting and sensing.

Contact Electrification at the Liquid-Solid Interface

Interfaces between a liquid and a solid (L-S) are the most important surface science in chemistry, catalysis, energy, and even biology. Formation of an electric double layer (EDL) at the L-S interface has been attributed due to the adsorption of a layer of ions at the solid surface, which causes the ions in the liquid to redistribute. Although the existence of a layer of charges on a solid surface is always assumed, the origin of the charges is not extensively explored. Recent studies of contact electrification (CE) between a liquid and a solid suggest that electron transfer plays a dominant role at the initial stage for forming the charge layer at the L-S interface. Here, we review the recent works about electron transfer in liquid-solid CE, including scenerios such as liquid-insulator, liquid-semiconductor, and liquid-metal. Formation of the EDL is revisited considering the existence of electron transfer at the L-S interface. Furthermore, the triboelectric nanogenerator (TENG) technique based on the liquid-solid CE is introduced, which can be used not only for harvesting mechanical energy from a liquid but also as a probe for probing the charge transfer at liquid-solid interfaces.

Wind driven semiconductor electricity generator with high direct current output based on a dynamic Schottky junction

With the fast development of the internet of things (IoTs), distributed sensors are frequently used and small and portable power sources are highly demanded. However, current portable power sources such as lithium batteries have low capacity and need to be replaced or recharged frequently. A portable power source which can continuously generate electrical power in situ will be an ideal solution. Herein, we demonstrate a wind driven semiconductor electricity generator based on a dynamic Schottky junction, which can output a continuous direct current with an average value of 4.4 mA (with a maximum value of 8.4 mA) over 740 seconds. Compared with a previous metal/semiconductor generator, the output current is one thousand times higher. Furthermore, this wind driven generator has been used as a turn counter, due to its stable output, and also to drive a graphene ultraviolet photodetector, which shows a responsivity of 35.8 A W^-1 under 365 nm ultraviolet light. Our research provides a feasible method to achieve wind power generation and power supply for distributed sensors in the future.

Microscale Schottky superlubric generator with high direct-current density and ultralong life

Miniaturized or microscale generators that can effectively convert weak and random mechanical energy into electricity have significant potential to provide solutions for the power supply problem of distributed devices. However, owing to the common occurrence of friction and wear, all such generators developed so far have failed to simultaneously achieve sufficiently high current density and sufficiently long lifetime, which are crucial for real-world applications. To address this issue, we invent a microscale Schottky superlubric generator (S-SLG), such that the sliding contact between microsized graphite flakes and n-type silicon is in a structural superlubric state (an ultra-low friction and wearless state). The S-SLG not only generates high current (~210 Am-2) and power (~7 Wm-2) densities, but also achieves a long lifetime of at least 5,000 cycles, while maintaining stable high electrical current density (~119 Am-2). No current decay and wear are observed during the experiment, indicating that the actual persistence of the S-SLG is enduring or virtually unlimited. By excluding the mechanism of friction-induced excitation in the S-SLG, we further demonstrate an electronic drift process during relative sliding using a quasi-static semiconductor finite element simulation. Our work may guide and accelerate the future use of S-SLGs in real-world applications.

Polarized Water Driven Dynamic PN Junction-Based Direct-Current Generator

There is a rising prospective in harvesting energy from the environment, as in situ energy is required for the distributed sensors in the interconnected information society, among which the water flow energy is the most potential candidate as a clean and abundant mechanical source. However, for microscale and unordered movement of water, achieving a sustainable direct-current generating device with high output to drive the load element is still challenging, which requires for further exploration. Herein, we propose a dynamic PN water junction generator with moving water sandwiched between two semiconductors, which outputs a sustainable direct-current voltage of 0.3 V and a current of 0.64 μA. The mechanism can be attributed to the dynamic polarization process of water as moving dielectric medium in the dynamic PN water junction, under the Fermi level difference of two semiconductors. We further demonstrate an encapsulated portable power-generating device with simple structure and continuous direct-current voltage output of 0.11 V, which exhibits its promising potential application in the field of wearable devices and the IoTs.

Interfacial Built-In Electric Field-Driven Direct Current Generator Based on Dynamic Silicon Homojunction

Searching for light and miniaturized functional device structures for sustainable energy gathering from the environment is the focus of energy society with the development of the internet of things. The proposal of a dynamic heterojunction-based direct current generator builds up new platforms for developing in situ energy. However, the requirement of different semiconductors in dynamic heterojunction is too complex to wide applications, generating energy loss for crystal structure mismatch. Herein, dynamic homojunction generators are explored, with the same semiconductor and majority carrier type. Systematic experiments reveal that the majority of carrier directional separation originates from the breaking symmetry between carrier distribution, leading to the rebounding effect of carriers by the interfacial electric field. Strikingly, NN Si homojunction with different Fermi levels can also output the electricity with higher current density than PP/PN homojunction, attributing to higher carrier mobility. The current density is as high as 214.0 A/m², and internal impedance is as low as 3.6 kΩ, matching well with the impedance of electron components. Furthermore, the N-i-N structure is explored, whose output voltage can be further improved to 1.3 V in the case of the N-Si/Al₂O₃/N-Si structure, attributing to the enhanced interfacial barrier. This approach provides a simple and feasible way of converting low-frequency disordered mechanical motion into electricity.

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m², power density of 201.0 W/m², and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

The static PN junction is the foundation of integrated circuits. Herein, we pioneer a high current density generation by mechanically moving N-type semiconductor over P-type semiconductor, named as the dynamic PN junction. The establishment and destruction of the depletion layer causes the redistribution and rebounding of diffusing carriers by the built-in field, similar to a capacitive charge/discharge process of PN junction capacitance during the movement. Through inserting dielectric layer at the interface of the dynamic PN junction, output voltage can be improved and designed numerically according to the energy level difference between the valence band of semiconductor and conduction band of dielectric layer. Especially, the dynamic MoS₂/AlN/Si generator with open-circuit voltage of 5.1 V, short-circuit current density of 112.0 A/m², power density of 130.0 W/m², and power-conversion efficiency of 32.5% has been achieved, which can light up light-emitting diode timely and directly. This generator can continuously work for 1 h, demonstrating its great potential applications.

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High current density direct-current generator based on dynamic PN junctions

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Dynamic equilibrium between establishment and destruction of the depletion layer

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Capacitive discharge of PN junction capacitance caused by hot carriers rebounding

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Enhance and design voltage numerically by inserting dielectric layer at the interface