Sunlight Control of Interfacial Magnetism for Solar Driven Spintronic Applications

Solar-Powered Switch of Antiferromagnetism/Ferromagnetism in Flexible Spintronics

The flexible electronics have application prospects in many fields, including as wearable devices and in structural detection. Spintronics possess the merits of a fast response and high integration density, opening up possibilities for various applications. However, the integration of miniaturization on flexible substrates is impeded inevitably due to the high Joule heat from high current density (1012 A/m2). In this study, a prototype flexible spintronic with device antiferromagnetic/ferromagnetic heterojunctions is proposed. The interlayer coupling strength can be obviously altered by sunlight soaking via direct photo-induced electron doping. With the assistance of a small magnetic field (±125 Oe), the almost 180° flip of magnetization is realized. Furthermore, the magnetoresistance changes (15~29%) of flexible spintronics on fingers receiving light illumination are achieved successfully, exhibiting the wearable application potential. Our findings develop flexible spintronic sensors, expanding the vision for the novel generation of photovoltaic/spintronic devices.

Manipulations of Spin Waves by Photoelectrons in Ferromagnetic/Non-Ferromagnetic Alloyed Film

Spin waves are considered to be an alternative carrier with great promise for information sensing. The feasible excitation and low-power manipulation of spin waves still remain a challenge. In this regard, natural light enablings spin-wave tunability in Co60 Al40 -alloyed film is investigated. A reversible shift of the critical angle (from 81° in the dark to 83° under illumination) of the body spin-wave is achieved successfully Meanwhile, an eye-catching shift (817 Oe) of the ferromagnetic resonance (FMR) field is obtained optically, leading to changes in magnetic anisotropy. Based on the modified Puszkarski's surface inhomogeneity model, the control of spin-wave resonance (SWR) by sunlight can be understood by an effective photoelectron-doping-induced change of the surface magnetic anisotropy. Furthermore, the body spin wave is modulated stably with natural light illumination, confirming a non-volatile, reversible switching behavior. This work has both practical and theoretical importance for developing future sunlight-tunable magnonics/spintronics devices.

Deterministic Magnetic Switching in Perpendicular Magnetic Trilayers Through Sunlight-Induced Photoelectron Injection

Finding an energy-efficient way of switching magnetization is crucial in spintronic devices, such as memories. Usually, spins are manipulated by spin-polarized currents or voltages in various ferromagnetic heterostructures; however, their energy consumption is relatively large. Here, a sunlight control of perpendicular magnetic anisotropy (PMA) in Pt (0.8 nm)/Co (0.65 nm)/Pt (2.5 nm)/PN Si heterojunction in an energy-efficient manner is proposed. The coercive field (H_C ) is altered from 261 to 95 Oe (64% variation) under sunlight illumination, enabling a nearly 180° deterministic magnetization switching reversibly with a 140 Oe magnetic bias assistant. The element-resolved X-ray circular dichroism measurement reveals different L3 and L2 edge signals of the Co layer with or without sunlight, suggesting a photoelectron-induced redistribution of the orbital and spin moment in Co magnetization. The first-principle calculations also reveal that the photo-induced electrons shift the Fermi level of electrons and enhance the in-plane Rashba field around the Co/Pt interfaces, leading to a weakened PMA and corresponding H_C decreasing and magnetization switching accordingly. The sunlight control of PMA may provide an alternative way for magnetic recording, which is energy efficient and would reduce the Joule heat from the high switching current.

Quantum magnetic phenomena in engineered heterointerface of low-dimensional van der Waals and non-van der Waals materials

Investigating magnetic phenomena at the microscopic level has emerged as an indispensable research domain in the field of low-dimensional magnetic materials. Understanding quantum phenomena that mediate the magnetic interactions in dimensionally confined materials is crucial from the perspective of designing cheaper, compact, and energy-efficient next-generation spintronic devices. The infrequent occurrence of intrinsic long-range magnetic order in dimensionally confined materials hinders the advancement of this domain. Hence, introducing and controlling the ferromagnetic character in two-dimensional materials is important for further prospective studies. The interface in a heterostructure significantly contributes to modulating its collective magnetic properties. Quantum phenomena occurring at the interface of engineered heterostructures can enhance or suppress magnetization of the system and introduce magnetic character to a native non-magnetic system. Considering most 2D magnetic materials are used as stacks with other materials in nanoscale devices, the methods to control the magnetism in a heterostructure and understanding the corresponding mechanism are crucial for promising spintronic and other functional applications. This review highlights the effect of electric polarization of the adjacent layer, changed structural configuration at the vicinity of the interface, natural strain induced by lattice mismatch, and exchange interaction in the interfacial region in modulating the magnetism of heterostructures of van der Waals and non-van der Waals materials. Further, prospects of interface-engineered magnetism in spin-dependent device applications are also discussed.

Enhancing Sunlight Control of Interfacial Magnetism by Introducing the ZnO Layer for Electron Harvesting

Recently, researchers have developed photovoltaic (PV) control of magnetism to provide a new way of manipulating spin states in an energy-effective manner, where the capability of magnetism manipulation is crucial. Here, we established a PV heterostructure of Pt/PV/ZnO/Co/Si to realize sunlight control of magnetism, where the ZnO layer is introduced to enhance the electron transportation as well as the interfacial optical-electromagnetic tunability. Compared to the PV heterostructure without the ZnO layer (245 Oe), a much greater ferromagnetic resonance shift (1149 Oe) and a saturated magnetization reduction (12.7%) were obtained with the optimal ZnO inserting layer under sunlight illumination. These results prove that the ZnO layer plays a key role in optimizing magnetic manipulation and opening a door toward PV spintronics in the future.

Photovoltaic modulation of ferromagnetism within a FM metal/P-N junction Si heterostructure

Obtaining small, fast, and energy-efficient spintronic devices requires a new way of manipulating spin states in an effective manner. Here, a prototype photovoltaic spintronic device with a p-n junction Si wafer is proposed which generates photo-induced electrons and changes the ferromagnetism by interfacial charge doping. A ferromagnetic resonance field change of 48.965 mT and 11.306 mT is achieved in Co and CoFeB thin films under sunlight illumination, respectively. The transient reflection (TR) analysis and the first principles calculation reveal the photovoltaic electrons that are doped into the magnetic layer and alter its Fermi level, correspondingly. This finding provides a new method of magnetism modulation and demonstrates a solar-driven spintronic device with abundant energy supply, which may further expand the landscape of spintronics research.

Photovoltaic Control of Ferromagnetism for Flexible Spintronics

The demand for low-power flexible spintronics for sensing, communicating, and data processing applications boosts an intense search for novel ways of controlling magnetism. In this work, a photovoltaic controllable flexible spintronic device within a Kapton/Ta/Co/(PC₇₁BM/PTB7-Th)/Pt heterostructure was demonstrated, and the magnetic anisotropy change of this flexible heterostructure as a function of the external light radiation and strain was quantitatively determined. 150 mW/cm² white light illumination induced 489 Oe out-of-plane ferromagnetic resonance field modulation, which was attributed to the photogenerated electron doping in the cobalt film. The chemical contamination effect and the interfacial oxidation effect during the photovoltaic doping process were eliminated. Moreover, it was found that the working function of the thin-film electrodes were different from the bulk values via an ultraviolet photoelectron spectroscopy test. Our results on flexible photovoltaic spintronics systems will invigorate the research toward the development of solar-driven energy-efficient spintronics.