1
|
Zhao M, Zhao Y, Li Y, Dong G, He Z, Du Y, Jiang Y, Wu S, Wang C, Zhao L, Jiang Z, Liu M, Zhou Z. Manipulations of Spin Waves by Photoelectrons in Ferromagnetic/Non-Ferromagnetic Alloyed Film. Adv Mater 2023; 35:e2303810. [PMID: 37401913 DOI: 10.1002/adma.202303810] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Revised: 06/19/2023] [Accepted: 06/27/2023] [Indexed: 07/05/2023]
Abstract
Spin waves are considered to be an alternative carrier with great promise for information sensing. The feasible excitation and low-power manipulation of spin waves still remain a challenge. In this regard, natural light enablings spin-wave tunability in Co60 Al40 -alloyed film is investigated. A reversible shift of the critical angle (from 81° in the dark to 83° under illumination) of the body spin-wave is achieved successfully Meanwhile, an eye-catching shift (817 Oe) of the ferromagnetic resonance (FMR) field is obtained optically, leading to changes in magnetic anisotropy. Based on the modified Puszkarski's surface inhomogeneity model, the control of spin-wave resonance (SWR) by sunlight can be understood by an effective photoelectron-doping-induced change of the surface magnetic anisotropy. Furthermore, the body spin wave is modulated stably with natural light illumination, confirming a non-volatile, reversible switching behavior. This work has both practical and theoretical importance for developing future sunlight-tunable magnonics/spintronics devices.
Collapse
Affiliation(s)
- Meng Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yifan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yaojin Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhexi He
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yujing Du
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuxuan Jiang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shaoyuan Wu
- Jiangsu Key Laboratory of Phylogenomics & Comparative Genomics Jiangsu International Joint Center of Genomics, School of Life Sciences, Jiangsu Normal University, Xuzhou, Jiangsu, 221116, China
| | - Chenying Wang
- State Key Laboratory for Manufacturing Systems Engineering, School of Mechanical Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an, Jiaotong University, Xi'an, 710049, China
| | - Libo Zhao
- State Key Laboratory for Manufacturing Systems Engineering, School of Mechanical Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an, Jiaotong University, Xi'an, 710049, China
| | - Zhuangde Jiang
- State Key Laboratory for Manufacturing Systems Engineering, School of Mechanical Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an, Jiaotong University, Xi'an, 710049, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Manufacturing Systems Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| |
Collapse
|
2
|
Melnikov GY, Vazhenina IG, Iskhakov RS, Boev NM, Komogortsev SV, Svalov AV, Kurlyandskaya GV. Magnetic Properties of FeNi/Cu-Based Lithographic Rectangular Multilayered Elements for Magnetoimpedance Applications. Sensors (Basel) 2023; 23:6165. [PMID: 37448014 DOI: 10.3390/s23136165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 07/02/2023] [Accepted: 07/03/2023] [Indexed: 07/15/2023]
Abstract
The rectangular elements in magnetoimpedance (MI) configuration with a specific nanocomposite laminated structure based on FeNi and Cu layers were prepared by lift-off lithographic process. The properties of such elements are controlled by their shape, the anisotropy induced during the deposition, and by effects associated with the composite structure. The characterizations of static and dynamic properties, including MI measurements, show that these elements are promising for sensor applications. We have shown that competition between the shape anisotropy and the in-plane induced anisotropy of the element material is worth taking into account in order to understand the magnetic behavior of multilayered rectangular stripes. A possibility of the dynamic methods (ferromagnetic and spin-wave resonance) to describe laminated planar elements having a non-periodic modulation of both structure and magnetic parameters of a system is demonstrated. We show that the multilayered structure, which was originally designed to prevent the development of a "transcritical" state in magnetic layers and to reach the required thickness, also induces the effects that hinder the achievement of the goal, namely an increase in the perpendicular magnetic anisotropy energy.
Collapse
Affiliation(s)
- Grigory Yu Melnikov
- Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia
| | - Irina G Vazhenina
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
- School of Space and Information Technology, Siberian Federal University, 660041 Krasnoyarsk, Russia
| | - Rauf S Iskhakov
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
| | - Nikita M Boev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
| | - Sergey V Komogortsev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
- Applied Physics Department, Reshetnev Siberian State University of Science and Technology, 660037 Krasnoyarsk, Russia
| | - Andrey V Svalov
- Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia
| | - Galina V Kurlyandskaya
- Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia
| |
Collapse
|
3
|
Jen SU, Chou TY, Lo CK. Impedance of nanometer thickness ferromagnetic Co40Fe40B20 films. Nanoscale Res Lett 2011; 6:468. [PMID: 21781336 PMCID: PMC3211980 DOI: 10.1186/1556-276x-6-468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/27/2011] [Accepted: 07/23/2011] [Indexed: 05/31/2023]
Abstract
Nanocrystalline Co40Fe40B20 films, with film thickness tf = 100 nm, were deposited on glass substrates by the magnetron sputtering method at room temperature. During the film deposition period, a dc magnetic field, h = 40 Oe, was applied to introduce an easy axis for each film sample: one with h||L and the other with h||w, where L and w are the length and width of the film. Ferromagnetic resonance (FMR), ultrahigh frequency impedance (IM), dc electrical resistivity (ρ), and magnetic hysteresis loops (MHL) of these films were studied. From the MHL and r measurements, we obtain saturation magnetization 4πMs = 15.5 kG, anisotropy field Hk = 0.031 kG, and r = 168 mW.cm. From FMR, we can determine the Kittel mode ferromagnetic resonance (FMR-K) frequency fFMRK = 1,963 MHz. In the h||L case, IM spectra show the quasi-Kittel-mode ferromagnetic resonance (QFMR-K) at f0 and the Walker-mode ferromagnetic resonance (FMR-W) at fn, where n = 1, 2, 3, and 4. In the h||w case, IM spectra show QFMR-K at F0 and FMR-W at Fn. We find that f0 and F0 are shifted from fFMRK, respectively, and fn = Fn. The in-plane spin-wave resonances are responsible for those relative shifts.PACS No. 76.50.+q; 84.37.+q; 75.70.-i.
Collapse
Affiliation(s)
- Shien Uang Jen
- Institute of Physics, Academia Sinica, Taipei, Taiwan, 11529, Republic of China
| | - Tzu Yang Chou
- Institute of Physics, Academia Sinica, Taipei, Taiwan, 11529, Republic of China
| | - Chi Kuen Lo
- Physics Dept, National Taiwan Normal University, Taipei, Taiwan, 11677, Republic of China
| |
Collapse
|