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Wang X, Qiao R, Lu H, He W, Liu Y, Zhou T, Wan D, Wang Q, Liu Y, Guo W. 2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310158. [PMID: 38573962 DOI: 10.1002/smll.202310158] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 03/15/2024] [Indexed: 04/06/2024]
Abstract
The integration of one-selector-one-resistor crossbar arrays requires the selectors featured with high nonlinearity and bipolarity to prevent leakage currents and any crosstalk among distinct cells. However, a selector with sufficient nonlinearity especially in the frame of device miniaturization remains scarce, restricting the advance of high-density storage devices. Herein, a high-performance memory selector is reported by constructing a graphene/hBN/WSe2 heterostructure. Within the temperature range of 300-80 K, the nonlinearity of this selector varies from ≈103 - ≈104 under forward bias, and increases from ≈300 - ≈105 under reverse bias, the highest reported nonlinearity among 2D selectors. This improvement is ascribed to direct tunneling at low bias and Fowler-Nordheim tunneling at high bias. The tunneling current versus voltage curves exhibit excellent bipolarity behavior because of the comparable hole and electron tunneling barriers, and the charge transport polarity can be effectively tuned from N-type or P-type to bipolar by simply changing source-drain bias. In addition, the conceptual memory selector exhibits no sign of deterioration after 70 000 switching cycles, paving the way for assembling 2D selectors into modern memory devices.
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Affiliation(s)
- Xiaofan Wang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ruixi Qiao
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Huan Lu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Weiwei He
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Tao Zhou
- School of Physics, Southeast University, Nanjing, 211189, China
| | - Dongyang Wan
- School of Physics, Southeast University, Nanjing, 211189, China
| | - Qin Wang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
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2
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Dong K, Yang G, Wang M, Bian J, Zhu L, Zhang F, Yu S, Liu S, Xiao JD, Guo X, Jiang X. Impact of Dipole Effect on Perovskite Solar Cells. CHEMSUSCHEM 2024:e202301497. [PMID: 38446050 DOI: 10.1002/cssc.202301497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Revised: 01/23/2024] [Indexed: 03/07/2024]
Abstract
Interface modification and bulk doping are two major strategies to improve the photovoltaic performance of perovskite solar cells (PSCs). Dipolar molecules are highly favored due to their unique dipolarity. This review discusses the basic concepts and characteristics of dipoles. In addition, the role of dipoles in PSCs and the corresponding conventional characterization methods for dipoles are introduced. Then, we systematically summarize the latest progress in achieving efficient and stable PSCs in dipole materials at several key interfaces. Finally, we look forward to the future application directions of dipole molecules in PSCs, aiming at providing deep insight and inspiration for developing efficient and stable PSCs.
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Affiliation(s)
- Kaiwen Dong
- College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Guangyue Yang
- College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Minhuan Wang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, Dalian, 116024, China
| | - Jiming Bian
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, Dalian, 116024, China
| | - Lina Zhu
- College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Fengshan Zhang
- Shandong Huatai Paper Co., LTD & Shandong Yellow Triangle Biotechnology Industry Research Institute Co., LTD, Dongying, 257335, China
| | - Shitao Yu
- College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Shiwei Liu
- College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Juan-Ding Xiao
- Institutes of Physical Science and Information Technology, Anhui Graphene Materials Research Center, Anhui University Hefei, Anhui, 230601, P. R. China
| | - Xin Guo
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian, 116023, China
| | - Xiaoqing Jiang
- College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
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3
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Li Z, Chen Y, Zhang C, Jiang H, Ding Z, Wang Y, Cui Z, Zhong H. Phenyl-Terminated Coupling Interface Enabled Highly Efficient and Stable Multiwavelength Perovskite Single Crystal/Silicon Integrated Photodetector. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17377-17385. [PMID: 36952640 DOI: 10.1021/acsami.3c01008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The use of amino-terminated siloxanes as coupling interface for perovskite single crystals (PSCs)/silicon integrated devices has been demonstrated to be an effective method toward CMOS compatible optoelectronics; however, it suffers from the coupling stability against the hydrophilicity of the exposed terminal amino groups. In this work, a phenyl-terminated interfacial molecule, anilino-methyl-triethoxysilane (AMTES), is proposed to achieve the effectively galvanic coupling between PSCs and silicon, which can not only improve the device environmental reliability but also lower the surface energy of the silicon substrate so as to facilitate the epitaxial growth of PSCs. Benefiting from the interfacial coupling of AMTES, the obtained MAPbI3 SC/silicon integrated device possesses highly efficient multiwavelength photodetection properties across the X-ray and NIR range, which exhibits a specific detectivity D* of 3.84 × 1013 cm Hz1/2 W-1 in the visible-NIR region and an X-ray sensitivity of 1.18 × 104 μC Gyair-1 cm-2 with the lowest detection limit of 49.6 nGyair s-1. The ultra wide -3 dB bandwidth of 67,300 Hz and the linear dynamic range (LDR) of 112 dB also prove its impressive dynamic response capabilities. Moreover, the AMTES modified integrated device almost maintains 96% of the initial photodetection performance even after keeping in the atmosphere environment for 28 days. This work opens a new avenue for interfacial engineering toward the development of on-chip PSC integrated silicon optoelectronic devices.
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Affiliation(s)
- Zining Li
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yu Chen
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Chao Zhang
- Nanovision Technology (Beijing) Co., Ltd., Beijing 100094, China
| | - Haotian Jiang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiyuan Ding
- Nanovision Technology (Beijing) Co., Ltd., Beijing 100094, China
| | - Yuling Wang
- College of Physics and Electrical Information Engineering, Daqing Normal University, Daqing 163000, P. R. China
| | - Zhili Cui
- Nanovision Technology (Beijing) Co., Ltd., Beijing 100094, China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
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4
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Gupta N, Karuppannan SK, Pasula RR, Vilan A, Martin J, Xu W, May EM, Pike AR, Astier HPA, Salim T, Lim S, Nijhuis CA. Temperature-Dependent Coherent Tunneling across Graphene-Ferritin Biomolecular Junctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:44665-44675. [PMID: 36148983 PMCID: PMC9542697 DOI: 10.1021/acsami.2c11263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Accepted: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Understanding the mechanisms of charge transport (CT) across biomolecules in solid-state devices is imperative to realize biomolecular electronic devices in a predictive manner. Although it is well-accepted that biomolecule-electrode interactions play an essential role, it is often overlooked. This paper reveals the prominent role of graphene interfaces with Fe-storing proteins in the net CT across their tunnel junctions. Here, ferritin (AfFtn-AA) is adsorbed on the graphene by noncovalent amine-graphene interactions confirmed with Raman spectroscopy. In contrast to junctions with metal electrodes, graphene has a vanishing density of states toward its intrinsic Fermi level ("Dirac point"), which increases away from the Fermi level. Therefore, the amount of charge carriers is highly sensitive to temperature and electrostatic charging (induced doping), as deduced from a detailed analysis of CT as a function of temperature and iron loading. Remarkably, the temperature dependence can be fully explained within the coherent tunneling regime due to excitation of hot carriers. Graphene is not only demonstrated as an alternative platform to study CT across biomolecular tunnel junctions, but it also opens rich possibilities in employing interface electrostatics in tuning CT behavior.
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Affiliation(s)
- Nipun
Kumar Gupta
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Senthil Kumar Karuppannan
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Rupali Reddy Pasula
- School
of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore 637457, Singapore
| | - Ayelet Vilan
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 76100, Israel
| | - Jens Martin
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Wentao Xu
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Esther Maria May
- Chemistry-School
of Natural and Environmental Sciences, Newcastle
University, Newcastle
upon Tyne NE1 7RU, U.K.
| | - Andrew R. Pike
- School
of
Materials Science and Engineering, Nanyang
Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Hippolyte P. A.
G. Astier
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Teddy Salim
- School
of
Materials Science and Engineering, Nanyang
Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Sierin Lim
- School
of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore 637457, Singapore
| | - Christian A. Nijhuis
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- Hybrid
Materials for Opto-Electronics Group, Department of Molecules and
Materials, MESA+ Institute for Nanotechnology and Centre for Brain-Inspired
Nano Systems, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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5
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Shin J, Yang S, Eo JS, Jeon T, Lee J, Lee CH, Wang G. Molecular Van Der Waals Heterojunction Photodiodes Enabling Dipole-Induced Polarity Switching. SMALL METHODS 2022; 6:e2200646. [PMID: 36055777 DOI: 10.1002/smtd.202200646] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Revised: 07/27/2022] [Indexed: 06/15/2023]
Abstract
Solid-state devices capable of controlling light-responsive charge transport at the molecular scale are essential for developing molecular optoelectronic technology. Here, a solid-state molecular photodiode device constructed by forming van der Waals (vdW) heterojunctions between standard molecular self-assembled monolayers and two-dimensional semiconductors such as WSe2 is reported. In particular, two non-functionalized molecular species used herein (i.e., tridecafluoro-1-octanethiol and 1-octanethiol) enable bidirectional modulation of the interface band alignment with WSe2 , depending on their dipole orientations. This dipole-induced band modulation at the vdW heterointerface leads to the opposite change of both photoswitching polarity and rectifying characteristics. Furthermore, compared with other molecular or 2D photodiodes at a similar scale, these heterojunction devices exhibit significantly enhanced photo-responsive performances in terms of photocurrent magnitude, open-circuit potential, and switching speed. This study proposes a novel concept of the solid-state molecular optoelectronic device with controlled functions and enhanced performances.
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Affiliation(s)
- Jaeho Shin
- Department of Chemistry, Rice University, Houston, Texas, 77005, USA
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seunghoon Yang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Jung Sun Eo
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Takgyeong Jeon
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Jaeho Lee
- Department of Chemistry, Rice University, Houston, Texas, 77005, USA
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Korea
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6
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Shin J, Eo JS, Jeon T, Lee T, Wang G. Advances of Various Heterogeneous Structure Types in Molecular Junction Systems and Their Charge Transport Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202399. [PMID: 35975456 PMCID: PMC9596861 DOI: 10.1002/advs.202202399] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Revised: 07/11/2022] [Indexed: 05/31/2023]
Abstract
Molecular electronics that can produce functional electronic circuits using a single molecule or molecular ensemble remains an attractive research field because it not only represents an essential step toward realizing ultimate electronic device scaling but may also expand our understanding of the intrinsic quantum transports at the molecular level. Recently, in order to overcome the difficulties inherent in the conventional approach to studying molecular electronics and developing functional device applications, this field has attempted to diversify the electrical characteristics and device architectures using various types of heterogeneous structures in molecular junctions. This review summarizes recent efforts devoted to functional devices with molecular heterostructures. Diverse molecules and materials can be combined and incorporated in such two- and three-terminal heterojunction structures, to achieve desirable electronic functionalities. The heterojunction structures, charge transport mechanisms, and possible strategies for implementing electronic functions using various hetero unit materials are presented sequentially. In addition, the applicability and merits of molecular heterojunction structures, as well as the anticipated challenges associated with their implementation in device applications are discussed and summarized. This review will contribute to a deeper understanding of charge transport through molecular heterojunction, and it may pave the way toward desirable electronic functionalities in molecular electronics applications.
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Affiliation(s)
- Jaeho Shin
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
- Department of ChemistryRice University6100 Main StreetHoustonTexas77005United States
| | - Jung Sun Eo
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
| | - Takgyeong Jeon
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
| | - Takhee Lee
- Department of Physics and AstronomyInstitute of Applied PhysicsSeoul National UniversitySeoul08826Korea
| | - Gunuk Wang
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
- Department of Integrative Energy EngineeringKorea UniversitySeoul02841Korea
- Center for Neuromorphic EngineeringKorea Institute of Science and TechnologySeoul02792Korea
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