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Jiang J, Zhang S, Shan Q, Yang L, Ren J, Wang Y, Jeon S, Xiang H, Zeng H. High-Color-Rendition White QLEDs by Balancing Red, Green and Blue Centres in Eco-Friendly ZnCuGaS:In@ZnS Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304772. [PMID: 38545966 DOI: 10.1002/adma.202304772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2023] [Revised: 01/21/2024] [Indexed: 04/05/2024]
Abstract
White light-emitting diodes (WLEDs) are the key components in the next-generation lighting and display devices. The inherent toxicity of Cd/Pb-based quantum dots (QDs) limits the further application in WLEDs. Recently, more attention is focused on eco-friendly QDs and their WLEDs, especially the phosphor-free WLEDs based on mono-component, which profits from bias-insensitive color stability. However, the imbalanced carrier distribution between red-green-blue luminescent centers, even the absence of a certain luminescent center, hinders their balanced and stable photoluminescence/electroluminescence (PL/EL). Here, an In3+-doped strategy in Zn-Cu-Ga-S@ZnS QDs is first proposed, and the balanced carrier distribution is realized by non-equivalent substitution and In3+ doping concentration modulation. The alleviation of the green emitter by the In3+-related red emitter and the compensation of blue emitter by the Zn-related electronic states contribute to the balanced red-green-blue emitting with high PL quantum yield (PLQY) of 95.3% and long lifetime (T90) of over 1100 h in atmospheric conditions. Thus, the In3+-doped WLEDs can achieve exceedingly slight proportional variations between red-green-blue EL intensity over time (∆CIE = (0.007, 0.009)), and high champion CRI of 94.9. This study proposes a single-component QD with balanced and stable red-green-blue PL/EL spectrum, meeting the requirements of lighting and display.
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Affiliation(s)
- Jiangyuan Jiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Shuai Zhang
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin, 300072, China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Linxiang Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Jing Ren
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yongjin Wang
- Grünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, 210003, China
| | - Seokwoo Jeon
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hengyang Xiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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2
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Zhang D, Zhu M, He Y, Cao Q, Gao Y, Li H, Lu G, Cui Q, Shen Y, He H, Dai X, Ye Z. Efficient and bright broadband electroluminescence based on environment-friendly metal halide nanoclusters. LIGHT, SCIENCE & APPLICATIONS 2024; 13:82. [PMID: 38584197 PMCID: PMC10999448 DOI: 10.1038/s41377-024-01427-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Revised: 03/12/2024] [Accepted: 03/13/2024] [Indexed: 04/09/2024]
Abstract
Broadband electroluminescence based on environment-friendly emitters is promising for healthy lighting yet remains an unprecedented challenge to progress. The copper halide-based emitters are competitive candidates for broadband emission, but their high-performance electroluminescence shows inadequate broad emission bandwidth of less than 90 nm. Here, we demonstrate efficient ultra-broadband electroluminescence from a copper halide (CuI) nanocluster single emitter prepared by a one-step solution synthesis-deposition process, through dedicated design of ligands and subtle selection of solvents. The CuI nanocluster exhibits high rigidity in the excitation state as well as dual-emissive modes of phosphorescence and temperature-activated delayed fluorescence, enabling the uniform cluster-composed film to show excellent stability and high photoluminescent efficiency. In consequence, ultra-broadband light-emitting diodes (LEDs) present nearly identical performance in an inert or air atmosphere without encapsulation and outstanding high-temperature operation performance, reaching an emission full width at half maximum (FWHM) of ~120 nm, a peak external quantum efficiency of 13%, a record maximum luminance of ~50,000 cd m-2, and an operating half-lifetime of 137 h at 100 cd m-2. The results highlight the potential of copper halide nanoclusters for next-generation healthy lighting.
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Affiliation(s)
- Dingshuo Zhang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, 325006, Wenzhou, China
| | - Yifan He
- Wenzhou XINXINTAIJING Tech. Co. Ltd., 325006, Wenzhou, China
| | - Qingli Cao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
| | - Hongjin Li
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
| | - Guochao Lu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
| | - Qiaopeng Cui
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
| | - Yongmiao Shen
- Department of Chemistry, Zhejiang Sci-Tech University, 310018, Hangzhou, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, 325006, Wenzhou, China
- Wenzhou XINXINTAIJING Tech. Co. Ltd., 325006, Wenzhou, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China.
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, 325006, Wenzhou, China.
- Wenzhou XINXINTAIJING Tech. Co. Ltd., 325006, Wenzhou, China.
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310027, Hangzhou, China.
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, 325006, Wenzhou, China.
- Wenzhou XINXINTAIJING Tech. Co. Ltd., 325006, Wenzhou, China.
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Jiang N, Ma G, Song D, Qiao B, Liang Z, Xu Z, Wageh S, Al-Ghamdi A, Zhao S. Defects in lead halide perovskite light-emitting diodes under electric field: from behavior to passivation strategies. NANOSCALE 2024; 16:3838-3880. [PMID: 38329288 DOI: 10.1039/d3nr06547b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Lead halide perovskites (LHPs) are emerging semiconductor materials for light-emitting diodes (LEDs) owing to their unique structure and superior optoelectronic properties. However, defects that initiate degradation of LHPs through external stimuli and prompt internal ion migration at the interfaces remain a significant challenge. The electric field (EF), which is a fundamental driving force in LED operation, complicates the role of these defects in the physical and chemical properties of LHPs. A deeper understanding of EF-induced defect behavior is crucial for optimizing the LED performance. In this review, the origins and characterization of defects are explored, indicating the influence of EF-induced defect dynamics on LED performance and stability. A comprehensive overview of recent defect passivation approaches for LHP bulk films and nanocrystals (NCs) is also provided. Given the ubiquity of EF, a summary of the EF-induced defect behavior can enhance the performance of perovskite LEDs and related optoelectronic devices.
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Affiliation(s)
- Na Jiang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Guoquan Ma
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Dandan Song
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Bo Qiao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Zhiqin Liang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Zheng Xu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Suling Zhao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
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Jin S, Yuan H, Pang T, Zhang M, Li J, Zheng Y, Wu T, Zhang R, Wang Z, Chen D. Highly Bright and Stable Lead-Free Double Perovskite White Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308487. [PMID: 37918976 DOI: 10.1002/adma.202308487] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Revised: 10/15/2023] [Indexed: 11/04/2023]
Abstract
Lead-free double perovskites (DPs) are emerging highly stable emitters with efficient broadband self-trapped exciton (STE) photoluminescence (PL), but their low electroluminescent (EL) efficiency is a critical shortcoming. This work promotes the external quantum efficiency (EQE) and luminance of DP-based white light-emitting diode (wLED) with a normal device structure to 0.76% and 2793 cd m-2 via two modifications: This work prevents the formation of adverse metallic silver, spatially confined STE, and lowers local site symmetry in Cs2 Na0.4 Ag0.6 In0.97 Bi0.03 Cl6 DP by terbium doping; and this work develops a guest-host strategy to improve film morphology, reduce defect density, and increase carrier mobility. These alterations cause substantial increase in STE radiative recombination and charge injection efficiency of perovskite layer. Finally, pure white EL with ideal color coordinates of (0.328, 0.329) and a record-breaking optoelectronic performance is achieved by introducing additional green carbon dots in LED to fill the deficient green component.
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Affiliation(s)
- Shilin Jin
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - He Yuan
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Tao Pang
- Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Huzhou, Zhejiang, 313000, China
| | - Manjia Zhang
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Junyang Li
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Yuanhui Zheng
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, Fujian, 350116, P. R. China
- College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350116, P. R. China
| | - Tianmin Wu
- Key Laboratory of Opto-Electronic Science and Technology for Medicine of Ministry of Education, College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou, Fujian, 350117, China
| | - Ruidan Zhang
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Zhibin Wang
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Daqin Chen
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, Fujian, 350116, P. R. China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
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5
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Li S, Lin H, Chu C, Martin C, MacSwain W, Meulenberg RW, Franck JM, Chakraborty A, Zheng W. Interfacial B-Site Ion Diffusion in All-Inorganic Core/Shell Perovskite Nanocrystals. ACS NANO 2023; 17:22467-22477. [PMID: 37962602 PMCID: PMC10690799 DOI: 10.1021/acsnano.3c05876] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 11/07/2023] [Accepted: 11/08/2023] [Indexed: 11/15/2023]
Abstract
All-inorganic metal halide perovskites (ABX3, X = Cl, Br, or I) show great potential for the fabrication of optoelectronic devices, but the toxicity and instability of lead-based perovskites limit their applications. Shell passivation with a more stable lead-free perovskite is a promising strategy to isolate unstable components from the environment as well as a feasible way to tune the optical properties. However, it is challenging to grow core/shell perovskite nanocrystals (NCs) due to the soft ionic nature of the perovskite lattice. In this work, we developed a facile method to grow a lead-free CsMnCl3 shell on the surface of CsPbCl3 NCs to form CsPbCl3/CsMnCl3 core/shell NCs with enhanced environmental stability and improved photoluminescence (PL) quantum yields (QYs). More importantly, the resulting core/shell perovskite NCs have color-tunable PL due to B-site ion diffusion at the interface of the core/shell NCs. Specifically, B-site Mn diffusion from the CsMnCl3 shell to the CsPbCl3 core leads to a Mn-doped CsPbCl3 core (i.e., Mn:CsPbCl3), which can turn on the Mn PL at around 600 nm. The ratio of Mn PL and host CsPbCl3 PL is highly tunable as a function of the thermal annealing time of the CsPbCl3/CsMnCl3 core/shell NCs. While the halide anion exchange for all-inorganic metal halide perovskites has been well-developed for band-gap-engineered materials, interfacial B-site diffusion in core/shell perovskite NCs is a promising approach for both tunable optical properties and enhanced environmental stability.
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Affiliation(s)
- Shuya Li
- Department
of Chemistry, Syracuse University, Syracuse, New York 13244, United States
| | - Hanjie Lin
- Department
of Chemistry, Syracuse University, Syracuse, New York 13244, United States
| | - Chun Chu
- Department
of Chemistry, Syracuse University, Syracuse, New York 13244, United States
| | - Chandler Martin
- Department
of Physics, Syracuse University, Syracuse, New York 13244, United States
| | - Walker MacSwain
- Department
of Chemistry, Syracuse University, Syracuse, New York 13244, United States
| | - Robert W. Meulenberg
- Department
of Physics and Astronomy and Frontier Institute for Research in Sensor
Technologies, University of Maine, Orono, Maine 04469, United States
| | - John M. Franck
- Department
of Chemistry, Syracuse University, Syracuse, New York 13244, United States
| | - Arindam Chakraborty
- Department
of Chemistry, Syracuse University, Syracuse, New York 13244, United States
| | - Weiwei Zheng
- Department
of Chemistry, Syracuse University, Syracuse, New York 13244, United States
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6
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Qin F, Lu M, Lu P, Sun S, Bai X, Zhang Y. Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance. SMALL METHODS 2023; 7:e2300434. [PMID: 37434048 DOI: 10.1002/smtd.202300434] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/17/2023] [Indexed: 07/13/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.
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Affiliation(s)
- Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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Kim DY, Jung JG, Lee YJ, Park MH. Lead-Free Halide Perovskite Nanocrystals for Light-Emitting Diodes. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6317. [PMID: 37763594 PMCID: PMC10532894 DOI: 10.3390/ma16186317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2023] [Revised: 09/11/2023] [Accepted: 09/18/2023] [Indexed: 09/29/2023]
Abstract
Lead-based halide perovskite nanocrystals (PeNCs) have demonstrated remarkable potential for use in light-emitting diodes (LEDs). This is because of their high photoluminescence quantum yield, defect tolerance, tunable emission wavelength, color purity, and high device efficiency. However, the environmental toxicity of Pb has impeded their commercial viability owing to the restriction of hazardous substances directive. Therefore, Pb-free PeNCs have emerged as a promising solution for the development of eco-friendly LEDs. This review article presents a detailed analysis of the various compositions of Pb-free PeNCs, including tin-, bismuth-, antimony-, and copper-based perovskites and double perovskites, focusing on their stability, optoelectronic properties, and device performance in LEDs. Furthermore, we address the challenges encountered in using Pb-free PeNC-LEDs and discuss the prospects and potential of these Pb-free PeNCs as sustainable alternatives to lead-based PeLEDs. In this review, we aim to shed light on the current state of Pb-free PeNC LEDs and highlight their significance in driving the development of eco-friendly LED technologies.
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Affiliation(s)
- Do-Young Kim
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
- Department of Green Chemistry and Materials Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
| | - Jae-Geun Jung
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
- Department of Green Chemistry and Materials Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
| | - Ye-Ji Lee
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
| | - Min-Ho Park
- Department of Materials Science and Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea; (D.-Y.K.); (J.-G.J.); (Y.-J.L.)
- Department of Green Chemistry and Materials Engineering, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
- Integrative Institute of Basic Science, Soongsil University, 369 Sangdo-ro, Dongjak-gu, Seoul 06978, Republic of Korea
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8
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Zhang L, Mei L, Wang K, Lv Y, Zhang S, Lian Y, Liu X, Ma Z, Xiao G, Liu Q, Zhai S, Zhang S, Liu G, Yuan L, Guo B, Chen Z, Wei K, Liu A, Yue S, Niu G, Pan X, Sun J, Hua Y, Wu WQ, Di D, Zhao B, Tian J, Wang Z, Yang Y, Chu L, Yuan M, Zeng H, Yip HL, Yan K, Xu W, Zhu L, Zhang W, Xing G, Gao F, Ding L. Advances in the Application of Perovskite Materials. NANO-MICRO LETTERS 2023; 15:177. [PMID: 37428261 PMCID: PMC10333173 DOI: 10.1007/s40820-023-01140-3] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Affiliation(s)
- Lixiu Zhang
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Luyao Mei
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China
| | - Kaiyang Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China
| | - Yinhua Lv
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Shuai Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Yaxiao Lian
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaoke Liu
- Department of Physics, Linköping University, 58183, Linköping, Sweden
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Qiang Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China
| | - Shuaibo Zhai
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Gengling Liu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Ligang Yuan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Bingbing Guo
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Ziming Chen
- Department of Chemistry, Imperial College London, London, W12 0BZ, UK
| | - Keyu Wei
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Shizhong Yue
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Guangda Niu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Xiyan Pan
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yong Hua
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Wu-Qiang Wu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Dawei Di
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Baodan Zhao
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Zhijie Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Yang Yang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Liang Chu
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China
| | - Mingjian Yuan
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Haibo Zeng
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Wentao Xu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
| | - Lu Zhu
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
| | - Wenhua Zhang
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, People's Republic of China.
| | - Feng Gao
- Department of Physics, Linköping University, 58183, Linköping, Sweden.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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9
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Gong XK, Zhang XS, Li Q, Liu L, Zhang YM, Li C, Kong LN, Xu JP, Li L. Surface Reconstruction of Lead-Free Perovskite Cs 2Ag 0.6Na 0.4InCl 6:Bi by Hydroxylation with Blue-Light-Excited Performance. J Colloid Interface Sci 2023; 648:865-875. [PMID: 37327629 DOI: 10.1016/j.jcis.2023.06.033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Revised: 06/01/2023] [Accepted: 06/06/2023] [Indexed: 06/18/2023]
Abstract
Molecular surface reconfiguration strategies have been instrumental to performance improvements of halide perovskite photovoltaic applications in recent years. However, research into the optical properties of the lead-free double perovskite Cs2AgInCl6 on the complex reconstructed surface is still lacking. Here, blue-light excitation in double perovskite Cs2Na0.4Ag0.6InCl6 with Bi doping has been successfully achieved by excess KBr coating and ethanol-driven structural reconstruction. Ethanol drives the formation of hydroxylated Cs2-yKyAg0.6Na0.4In0.8Bi0.2Cl6-yBry in the Cs2Ag0.6Na0.4In0.8Bi0.2Cl6@xKBr interface layer. The hydroxyl group adsorbed on the interstitial sites of the double perovskite structure induces a transfer of local space electrons to the [AgCl6] and [InCl6] octahedral regions, enabling them to be excited with blue light (467 nm). The passivation of KBr shell reduces the non-radiative transition probability of excitons. Blue-light-excited flexible photoluminescence devices based on hydroxylated Cs2Ag0.6Na0.4In0.8Bi0.2Cl6@16KBr are fabricated. The application of hydroxylated Cs2Ag0.6Na0.4In0.8Bi0.2Cl6@16KBr as down-shift layer in GaAs photovoltaic cell module can increase its power conversion efficiency by 3.34%. The surface reconstruction strategy provides a new way to optimize the performance of lead-free double perovskite.
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Affiliation(s)
- Xiao-Kai Gong
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Xiao-Song Zhang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China.
| | - Qian Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Long Liu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Yue-Ming Zhang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Chao Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Li-Na Kong
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Jian-Ping Xu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Lan Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
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10
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Liu Z, Sun Y, Cai T, Yang H, Zhao J, Yin T, Hao C, Chen M, Shi W, Li X, Guan L, Li X, Wang X, Tang A, Chen O. Two-Dimensional Cs 2 AgIn x Bi 1- x Cl 6 Alloyed Double Perovskite Nanoplatelets for Solution-Processed Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211235. [PMID: 36906925 DOI: 10.1002/adma.202211235] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 02/21/2023] [Indexed: 05/12/2023]
Abstract
Lead-free double perovskites have emerged as a promising class of materials with potential to be integrated into a wide range of optical and optoelectronic applications. Herein, the first synthesis of 2D Cs2 AgInx Bi1- x Cl6 (0 ≤ x ≤ 1) alloyed double perovskite nanoplatelets (NPLs) with well controlled morphology and composition is demonstrated. The obtained NPLs show unique optical properties with the highest photoluminescence quantum yield of 40.1%. Both temperature dependent spectroscopic studies and density functional theory calculation results reveal that the morphological dimension reduction and In-Bi alloying effect together boost the radiative pathway of the self-trapped excitons of the alloyed double perovskite NPLs. Moreover, the NPLs exhibit good stability under ambient conditions and against polar solvents, which is ideal for all solution-processing of the materials in low-cost device manufacturing. The first solution-processed light-emitting diodes is demonstrated using the Cs2 AgIn0.9 Bi0.1 Cl6 alloyed double perovskite NPLs as the sole emitting component, showing luminance maximum of 58 cd m-2 and peak current efficiency of 0.013 cd A-1 . This study sheds light on morphological control and composition-property relationships of double perovskite nanocrystals, paving the way toward ultimate utilizations of lead-free perovskite materials in diverse sets of real-life applications.
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Affiliation(s)
- Zhenyang Liu
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
| | - Yingying Sun
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Tong Cai
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
| | - Hanjun Yang
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
| | - JinXing Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing, 100044, China
| | - Tao Yin
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Chaoqi Hao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Mingjun Chen
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Wenwu Shi
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China
| | - Xiaoxiao Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Li Guan
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Xu Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Xinzhong Wang
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China
| | - Aiwei Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing, 100044, China
| | - Ou Chen
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
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11
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Zhu H, Pan Y, Peng C, Ding Y, Lian H, Lin J, Li L. Precise Hue Control in a Single-Component White-Light Emitting Perovskite Cs 2 SnCl 6 through Defect Engineering Based on La 3+ Doping. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300862. [PMID: 36811284 DOI: 10.1002/smll.202300862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Indexed: 05/25/2023]
Abstract
Single-component white light emitters based on the all-inorganic perovskites will act as outstanding candidates for applications in solid-state lighting thanks to their abundant energy states for self-trapped excitons (STE) with ultra-high photoluminescence (PL) efficiency. Here, a complementary white light is realized by dual STEs emissions with blue and yellow colors in a single-component perovskite Cs2 SnCl6 :La3+ microcrystal (MC). The dual emission bands centered at 450 and 560 nm are attributed to the intrinsic STE1 emission in host lattice Cs2 SnCl6 and the STE2 emission induced by the heterovalent La3+ doping, respectively. The hue of the white light can be tunable through energy transfer between the two STEs, the variation of excitation wavelength, and the Sn4+ /Cs+ ratios in starting materials. The effects of the doping heterovalent La3+ ions on the electronic structure and photophysical properties of the Cs2 SnCl6 crystals and the created impurity point defect states are investigated by the chemical potentials calculated using density functional theory (DFT) and confirmed by the experimental results. These results provide a facile approach to gaining novel single-component white light emitter and offer fundamental insights into the defect chemistry in the heterovalent ions doped perovskite luminescent crystals.
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Affiliation(s)
- Hong Zhu
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, P. R. China
| | - Yuexiao Pan
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, P. R. China
| | - Chengdong Peng
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, P. R. China
| | - Yihong Ding
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, P. R. China
| | - Hongzhou Lian
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
| | - Jun Lin
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
| | - Liyi Li
- Innovative Drug and Imaging Agent R&D Center, Research Institute of Tsinghua, Pearl River Delta, Guangzhou, P. R. China
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12
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Bai T, Wang X, Wang Z, Ji S, Meng X, Wang Q, Zhang R, Han P, Han KL, Chen J, Liu F, Yang B. Highly Luminescent One-Dimensional Organic-Inorganic Hybrid Double-Perovskite-Inspired Materials for Single-Component Warm White-Light-Emitting Diodes. Angew Chem Int Ed Engl 2023; 62:e202213240. [PMID: 36377275 DOI: 10.1002/anie.202213240] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Indexed: 11/17/2022]
Abstract
Double perovskites (DPs) are one of the most promising candidates for developing white light-emitting diodes (WLEDs) owing to their intrinsic broadband emission from self-trapped excitons (STEs). Translation of three-dimensional (3D) DPs to one-dimensional (1D) analogues, which could break the octahedral tolerance factor limit, is so far remaining unexplored. Herein, by employing a fluorinated organic cation, we report a series of highly luminescent 1D DP-inspired materials, (DFPD)2 MI InBr6 (DFPD=4,4-difluoropiperidinium, MI =K+ and Rb+ ). Highly efficient warm-white photoluminescence quantum yield of 92 % is achieved by doping 0.3 % Sb3+ in (DFPD)2 KInBr6 . Furthermore, single-component warm-WLEDs fabricated with (DFPD)2 KInBr6 :Sb yield a luminance of 300 cd/m2 , which is one of the best-performing lead-free metal-halides WLEDs reported so far. Our study expands the scope of In-based metal-halides from 3D to 1D, which exhibit superior optical performances and broad application prospects.
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Affiliation(s)
- Tianxin Bai
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Xiaochen Wang
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Zhongyi Wang
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Sujun Ji
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Xuan Meng
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Qiujie Wang
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Ruiling Zhang
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Peigeng Han
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Ke-Li Han
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China.,State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Science, Dalian, 116023, P. R. China.,University of the Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junsheng Chen
- Nano-Science Center & Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark
| | - Feng Liu
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, P. R. China
| | - Bin Yang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Science, Dalian, 116023, P. R. China.,University of the Chinese Academy of Sciences, Beijing, 100049, P. R. China
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13
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Guo Q, Zhao X, Song B, Luo J, Tang J. Light Emission of Self-Trapped Excitons in Inorganic Metal Halides for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201008. [PMID: 35322473 DOI: 10.1002/adma.202201008] [Citation(s) in RCA: 42] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2022] [Revised: 03/14/2022] [Indexed: 06/14/2023]
Abstract
Self-trapped excitons (STEs) have recently attracted tremendous interest due to their broadband emission, high photoluminescence quantum yield, and self-absorption-free properties, which enable a large range of optoelectronic applications such as lighting, displays, radiation detection, and special sensors. Unlike free excitons, the formation of STEs requires strong coupling between excited state excitons and the soft lattice in low electronic dimensional materials. The chemical and structural diversity of metal halides provides an ideal platform for developing efficient STE emission materials. Herein, an overview of recent progress on STE emission materials for optoelectronic applications is presented. The relationships between the fundamental emission mechanisms, chemical compositions, and device performances are systematically reviewed. On this basis, currently existing challenges and possible development opportunities in this field are presented.
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Affiliation(s)
- Qingxun Guo
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Xue Zhao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Jiajun Luo
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
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14
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Tan J, Li D, Zhu J, Han N, Gong Y, Zhang Y. Self-trapped excitons in soft semiconductors. NANOSCALE 2022; 14:16394-16414. [PMID: 36317508 DOI: 10.1039/d2nr03935d] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Self-trapped excitons (STEs) have attracted tremendous attention due to their intriguing properties and potential optoelectronic applications. STEs are formed from the lattice distortion induced by the strong electron (exciton)-phonon coupling in soft semiconductors upon photoexcitation, which features in broadband photoluminescence (PL) emission spectra with a large Stokes shift. Recently, significant progress has been achieved in this field but many remain challenges that need to be solved, including the understanding of the underlying physical mechanism, tuning of the performance, and device applications. Along these lines, for the first time, systematic experimental characterizations and advanced theoretical calculations are presented in this review to shed light on the physical mechanism. The possibility of tuning the STEs through multiple degrees of freedom is also presented, along with an overview of the STE-based emerged applications and future research perspectives.
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Affiliation(s)
- Jianbin Tan
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
| | - Delong Li
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
| | - Jiaqi Zhu
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
| | - Na Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
| | - Youning Gong
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
| | - Yupeng Zhang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
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15
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Meng X, Ji S, Wang Q, Wang X, Bai T, Zhang R, Yang B, Li Y, Shao Z, Jiang J, Han K, Liu F. Organic-Inorganic Hybrid Cuprous-Based Metal Halides for Warm White Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203596. [PMID: 36068152 PMCID: PMC9631088 DOI: 10.1002/advs.202203596] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Revised: 08/05/2022] [Indexed: 05/21/2023]
Abstract
Single-component emitters with stable and bright warm white-light emission are highly desirable for high-efficacy warm white light-emitting diodes (warm-WLEDs), however, materials with such luminescence properties are extremely rare. Low-dimensional lead (Pb) halide perovskites can achieve warm white photoluminescence (PL), yet they suffer from low stability and PL quantum yield (PLQY). While Pb-free air-stable perovskites such as Cs2 AgInCl6 emit desirable warm white light, sophisticated doping strategies are typically required to increase their PL intensity. Moreover, the use of rare metal-bearing compounds along with the typically required vacuum-based thin-film processing may greatly increase their production cost. Herein, organic-inorganic hybrid cuprous (Cu+ )-based metal halide MA2 CuCl3 (MA = CH3 NH3 + ) that meets the requirements of i) nontoxicity, ii) high PLQY, and iii) dopant-free is presented. Both single crystals and thin films of MA2 CuCl3 can be facilely prepared by a low-cost solution method, which demonstrate bright warm white-light emission with intrinsically high PLQYs of 90-97%. Prototype electroluminescence devices and down-conversion LEDs are fabricated with MA2 CuCl3 thin films and single crystals, respectively, which show bright luminescence with decent efficiencies and operational stability. These findings suggest that MA2 CuCl3 has a great potential for the single-component indoor lighting and display applications.
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Affiliation(s)
- Xuan Meng
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
| | - Sujun Ji
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
| | - Qiujie Wang
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
| | - Xiaochen Wang
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
| | - Tianxin Bai
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
| | - Ruiling Zhang
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
| | - Bin Yang
- State Key Laboratory of Molecular Reaction DynamicsDalian Institute of Chemical PhysicsChinese Academy of ScienceDalian116023P. R. China
| | - Yimeng Li
- Qingdao Institute of Bioenergy and Bioprocess TechnologyChinese Academy of SciencesQingdao266101P. R. China
| | - Zhipeng Shao
- Qingdao Institute of Bioenergy and Bioprocess TechnologyChinese Academy of SciencesQingdao266101P. R. China
| | - Junke Jiang
- ISCR (Institut des Sciences Chimiques de Rennes)‐UMR CNRS 6226ENSCR, Université de RennesRennes 35700France
| | - Ke‐li Han
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
- State Key Laboratory of Molecular Reaction DynamicsDalian Institute of Chemical PhysicsChinese Academy of ScienceDalian116023P. R. China
| | - Feng Liu
- Institute of Molecular Sciences and EngineeringInstitute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao266237P. R. China
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16
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Dong J, Lu F, Han D, Wang J, Zang Z, Kong L, Zhang Y, Ma X, Zhou J, Ji H, Yang X, Wang N. Deep‐Blue Electroluminescence of Perovskites with Reduced Dimensionality Achieved by Manipulating Adsorption‐Energy Differences. Angew Chem Int Ed Engl 2022; 61:e202210322. [DOI: 10.1002/anie.202210322] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Indexed: 11/06/2022]
Affiliation(s)
- Jianchao Dong
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Feifei Lu
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Dongyuan Han
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Jie Wang
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Ziang Zang
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China
| | - Yu Zhang
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Xue Ma
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Jianheng Zhou
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Huiyu Ji
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China
| | - Ning Wang
- Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China
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17
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Kong L, Zhang X, Zhang C, Wang L, Wang S, Cao F, Zhao D, Rogach AL, Yang X. Stability of Perovskite Light-Emitting Diodes: Existing Issues and Mitigation Strategies Related to Both Material and Device Aspects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2205217. [PMID: 35921550 DOI: 10.1002/adma.202205217] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Revised: 07/12/2022] [Indexed: 06/15/2023]
Abstract
Metal halide perovskites combine excellent electronic and optical properties, such as defect tolerance and high photoluminescence efficiency, with the benefits of low-cost, large-area, solution-based processing. Composition- and dimension-tunable properties of perovskites have already been utilized in bright and efficient light-emitting diodes (LEDs). At the same time, there are still great challenges ahead to achieving operational and spectral stability of these devices. In this review, the origins of instability of perovskite materials, and reasons for their degradation in LEDs are considered. Then, strategies for improving the stability of perovskite materials are reviewed, such as compositional engineering, dimensionality control, defect passivation, suitable encapsulation matrices, and fabrication of core/shell perovskite nanocrystals. For improvement of the operational stability of perovskite LEDs, the use of inorganic charge-transport layers, optimization of charge balance, and proper thermal management are considered. The review is concluded with a detailed account of the current challenges and a perspective on the key approaches and opportunities on how to reach the goal of stable, bright, and efficient perovskite LEDs.
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Affiliation(s)
- Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Xiaoyu Zhang
- College of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Chengxi Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Fan Cao
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Dewei Zhao
- College of Materials Science and Engineering, Engineering Research Center of Alternative Energy Materials & Devices (MoE), Sichuan University, Chengdu, 610065, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
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18
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Dong J, Lu F, Han D, Wang J, Zang Z, Kong L, Zhang Y, Ma X, Zhou J, Ji H, Yang X, Wang N. Deep‐Blue Electroluminescence of Perovskites with Reduced Dimensionality Achieved by Manipulating Adsorption‐Energy Differences. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202210322] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
| | | | | | | | | | | | | | - Xue Ma
- Jilin University Physics CHINA
| | | | | | | | - Ning Wang
- Jilin University College of physics Qianjin Street 130022 Changchun CHINA
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19
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Bi W, Wang Z, Li H, Song Y, Liu X, Wang Y, Ge C, Wang A, Kang Y, Yang Y, Li B, Dong Q. Highly Stable and Moisture-Immune Monocomponent White Perovskite Phosphor by Trifluoromethyl (-CF 3) Regulation. J Phys Chem Lett 2022; 13:6792-6799. [PMID: 35856791 DOI: 10.1021/acs.jpclett.2c01868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Halide perovskites are emerging as promising candidates for white light solid state lighting. Nevertheless, there are still challenges of a high water stability, a tunable color temperature, and a high photoluminescence quantum yield (PLQY). Herein, we report hydrophobic, electron-withdrawing trifluoromethyl (-CF3)-modified phenethylamine lead bromide (PEA2PbBr4) with ultrahigh stability in water for >2 months, and the broadband white light emission is illustrated by self-trapped excitons attributed to exciton-phonon coupling that coordinate molecular vibration, lattice distortion, and electrostatic interaction. In particular, by Mn2+ doping, the emission color can be tuned from cold (10237 K) to warm (2406 K), and a greatly enhanced PLQY of ≤87.93% can be achieved. Furthermore, the perovskites also possess an excellent color rendering index (the highest is 94). A monocomponent white light-emitting diode with amazing CIE 1931 coordinates of (0.33, 0.32) is further assembled, demonstrating a luminance of 471.5 cd m-2 at 50 mA and good long-term operation stability after >2 months. This study of highly efficient and stable perovskites with high-quality white light emission will open up new opportunities in solid state lighting.
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Affiliation(s)
- Weihui Bi
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Zisheng Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Hanming Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Yilong Song
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Xiaoting Liu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Yingqi Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Chengda Ge
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Anran Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Yifei Kang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Yang Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Bao Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Qingfeng Dong
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
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20
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Liu S, Heindl MW, Fehn N, Caicedo-Dávila S, Eyre L, Kronawitter SM, Zerhoch J, Bodnar S, Shcherbakov A, Stadlbauer A, Kieslich G, Sharp ID, Egger DA, Kartouzian A, Deschler F. Optically Induced Long-Lived Chirality Memory in the Color-Tunable Chiral Lead-Free Semiconductor ( R)/( S)-CHEA 4Bi 2Br xI 10-x ( x = 0-10). J Am Chem Soc 2022; 144:14079-14089. [PMID: 35895312 DOI: 10.1021/jacs.2c01994] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Hybrid organic-inorganic networks that incorporate chiral molecules have attracted great attention due to their potential in semiconductor lighting applications and optical communication. Here, we introduce a chiral organic molecule (R)/(S)-1-cyclohexylethylamine (CHEA) into bismuth-based lead-free structures with an edge-sharing octahedral motif, to synthesize chiral lead-free (R)/(S)-CHEA4Bi2BrxI10-x crystals and thin films. Using single-crystal X-ray diffraction measurements and density functional theory calculations, we identify crystal and electronic band structures. We investigate the materials' optical properties and find circular dichroism, which we tune by the bromide-iodide ratio over a wide wavelength range, from 300 to 500 nm. We further employ transient absorption spectroscopy and time-correlated single photon counting to investigate charge carrier dynamics, which show long-lived excitations with optically induced chirality memory up to tens of nanosecond timescales. Our demonstration of chirality memory in a color-tunable chiral lead-free semiconductor opens a new avenue for the discovery of high-performance, lead-free spintronic materials with chiroptical functionalities.
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Affiliation(s)
- Shangpu Liu
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Markus W Heindl
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Natalie Fehn
- Catalysis Research Center and Chemistry Department, Technical University of Munich, Lichtenbergstraße 4, Garching 85748, Germany
| | - Sebastián Caicedo-Dávila
- Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Lissa Eyre
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Silva Maria Kronawitter
- Catalysis Research Center and Chemistry Department, Technical University of Munich, Lichtenbergstraße 4, Garching 85748, Germany
| | - Jonathan Zerhoch
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Stanislav Bodnar
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Andrii Shcherbakov
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Anna Stadlbauer
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Gregor Kieslich
- Catalysis Research Center and Chemistry Department, Technical University of Munich, Lichtenbergstraße 4, Garching 85748, Germany
| | - Ian D Sharp
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - David A Egger
- Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
| | - Aras Kartouzian
- Catalysis Research Center and Chemistry Department, Technical University of Munich, Lichtenbergstraße 4, Garching 85748, Germany
| | - Felix Deschler
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, Garching 85748, Germany.,Department of Physics, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany
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21
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Huang X, Matsushita Y, Sun HT, Shirahata N. Impact of bismuth-doping on enhanced radiative recombination in lead-free double-perovskite nanocrystals. NANOSCALE ADVANCES 2022; 4:3091-3100. [PMID: 36133518 PMCID: PMC9419852 DOI: 10.1039/d2na00238h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/18/2022] [Accepted: 06/10/2022] [Indexed: 06/16/2023]
Abstract
Lead-free double-perovskite nanocrystals (NCs) have received considerable attention as promising candidates for environmentally friendly optical applications. Furthermore, double-perovskite nanostructures are known to be physically stable compared to most other inorganic halide perovskites, with a generic chemical formula of ABX3 (e.g., A = Cs+; B = Sn2+ or Ge2+; X = Cl-, Br-, I-, or their combination). However, relevant experimental studies on the photophysical properties are still insufficient for Pb-free double-perovskite NCs. Herein, we synthesized Cs2Ag0.65Na0.35InCl6 NCs doped with bismuth (Bi3+) ions and investigated their photophysical properties to reveal the role of the dopant on the enhanced photoemission properties. Specifically, it was found that the photoluminescence quantum yield (PLQY) increased up to 33.2% by 2% Bi-doping. The optical bandgap of the NCs decreased from 3.47 eV to 3.41 eV as the amount of the dopant increased from 2% to 15%. To find out the effect of Bi-doping, the temperature-dependent PL properties of the undoped and doped NCs were investigated by utilizing steady-state and time-resolved PL spectroscopy. With increasing the temperature from 20 K to 300 K, the PL intensities of the doped NCs decreased slower than the undoped ones. The correlated average PL lifetimes of both the bismuth-doped and undoped NCs decreased with increasing the temperature. The experimental results revealed that all the NC samples showed thermal quenching with the temperature increasing, and the PL quenching was suppressed in bismuth-doped NCs.
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Affiliation(s)
- Xiaoyu Huang
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) Ibaraki 305-0044 Japan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University Sapporo 060-0814 Japan
| | - Yoshitaka Matsushita
- Research Network and Facility Services Division, National Institute for Materials Science (NIMS) Ibaraki 305-0047 Japan
| | - Hong-Tao Sun
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) Ibaraki 305-0044 Japan
| | - Naoto Shirahata
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) Ibaraki 305-0044 Japan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University Sapporo 060-0814 Japan
- Department of Physics, Chuo University Tokyo 112-8551 Japan
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22
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Cao M, Zhao X, Gong X. Rapid and Large-Scale Preparation of Stable and Efficient White Light Emissive Perovskite Microcrystals Using Ionic Liquids. J Phys Chem Lett 2022; 13:6048-6056. [PMID: 35758852 DOI: 10.1021/acs.jpclett.2c01518] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this work, we report large-scale preparation of stable Sb3+ and Bi3+ codoped Cs2ZrCl6 microcrystals for highly efficient white light emission using ionic liquids, demonstrating a broad dual-band white emission covering 400-800 nm. The dual emissions originate from the associated self-trapped excitons of the [SbCl6]3- and [BiCl6]3- octahedra. Moreover, the ratio of the dual-emission peaks can be effectively regulated by tuning the excitation wavelength. Meanwhile, to improve the optical properties and stability, ionic liquids are employed to assist the synthesis process of perovskite materials. The white light emission of one of the samples demonstrates CIE coordinates right in the center of the white light region (0.334, 0.331) and an excellent color rendering index (∼90.3), accompanied by a 66.1% quantum efficiency. Moreover, our method allows the facile synthesis of large batches of microcrystalline powders. Our findings demonstrate the potential of white phosphors as single components for future applications in lighting fields.
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Affiliation(s)
- Mengyan Cao
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, P. R. China
| | - Xiujian Zhao
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, P. R. China
| | - Xiao Gong
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, P. R. China
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23
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Chen W, Shao H, Wu X, Li L, Zhu J, Dong B, Xu L, Xu W, Zhou D, Hu J, Bai X, Song H. Highly Stable and Efficient Mn 2+ Doping Zero-Dimension Cs 2Zn xPb 1-xCl 4 Alloyed Nanorods toward White Electroluminescent Light-Emitting Diodes. J Phys Chem Lett 2022; 13:2379-2387. [PMID: 35254835 DOI: 10.1021/acs.jpclett.2c00381] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Zero-dimensional (0D) crystal structure perovskite NCs have reemerged as promising materials owing to their superior long-term stability; however, their poor conductivity leads to the inferior electrical performances and critically restricts the optoelectronic application of 0D perovskite materials. Herien, the alloyed 0D crystal structure Cs2ZnxPb1-xCl4 nanorods (NRs) have been synthesized by the modified hot-injection method, which emits bright blue-violet light at 408 nm, and the optimized photoluminescence quantum yield (PLQY) reaches 26%. The Cs2Zn0.88Pb0.12Cl4 NRs display more excellent air stability and an order of magnitude higher conductivity than CsPbCl3 nanocube films. In addition, we dope Mn2+ ions into the Cs2Zn0.88Pb0.12Cl4 NRs, which accomplished the optimized PLQY of 40.3% and polarized emission with r = 0.19. The light-emitting diodes (LEDs) based on Mn2+ ion doped Cs2Zn0.88Pb0.12Cl4 NRs exhibit a chromaticity coordinate (CIE) of (0.36, 0.33), an EQE of 0.3%, and a maximum luminance of 98 cd m-2. This work has enriched ideas for the production of white light perovskite LEDs.
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Affiliation(s)
- Wenda Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - He Shao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Xiufeng Wu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Lifang Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Jinyang Zhu
- State Centre for International Cooperation on Designer Low-carbon & Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Biao Dong
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Lin Xu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Wen Xu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Donglei Zhou
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Junhua Hu
- State Centre for International Cooperation on Designer Low-carbon & Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Hongwei Song
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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