PbI2 -DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X-Ray Detection

Green Fabrication of Sulfonium-Containing Bismuth Materials for High-Sensitivity X-Ray Detection

Organic-inorganic hybrid materials based on lead and bismuth have recently been proposed as novel X- and gamma-ray detectors for medical imaging, non-destructive testing, and security, due to their high atomic numbers and facile preparation compared to traditional materials like amorphous selenium and Cd(Zn)Te. However, challenges related to device operation, excessively high dark currents, and long-term stability have delayed commercialization. Here, two novel semiconductors incorporating stable sulfonium cations are presented, [(CH3CH2)3S]6Bi8I30 and [(CH3CH2)3S]AgBiI5, synthesized via solvent-free ball milling and fabricated into dense polycrystalline pellets using cold isostatic compression, two techniques that can easily be upscaled, for X-ray detection application. The fabricated detectors exhibit exceptional sensitivities (14 100-15 190 µC Gyair -1 cm-2) and low detection limits (90 nGyair s-1 for [(CH3CH2)3S]6Bi8I30 and 78 nGyair s-1 for [(CH3CH2)3S]AgBiI5), far surpassing current commercial detectors. Notably, they maintain performance after 9 months of ambient storage. The findings highlight [(CH3CH2)3S]6Bi8I30 and [(CH3CH2)3S]AgBiI5 as scalable, cost-effective and highly stable alternatives to traditional semiconductor materials, offering great potential as X-ray detectors in medical and security applications.

Blade-Coating with Engineered Evaporation Kinetics Enables Scalable Perovskite Photovoltaics with Minimal Efficiency Loss

The blade-coating method has become an important technology that can be expanded to manufacture perovskite solar photovoltaics. However, the inherent conflict between rapid solvent removal and crystallization control in ambient blade-coating process fundamentally constrains the production throughput and film quality of perovskite solar modules. Here, a ternary solvent system (DMF/NMP/2-methoxyethanol) with hierarchical volatility gradients is developed, synergistically integrated with vacuum-flash evaporation to decouple nucleation and crystal growth kinetics. Specifically, 2-methoxyethanol (2-ME) enables vacuum flash-induced supersaturation for templated nucleation, while NMP facilitates strain-relaxed grain coalescence, and DMF ensures optimal ink rheology. This approach yields pinhole-free films with enlarged grains under ambient conditions (T = ≈30 ± 5 °C, RH = 30 ± 10%). The blade-coated n-i-p perovskite solar cells (active area: 0.08 cm2) achieve a power conversion efficiency (PCE) of 23.24%, and 5 × 5 cm2 mini-modules (12 cm2 active area) reach 22.12%, with merely 4.8% efficiency loss upon 150 times area upscaling. The devices exhibit improved stability, retaining 90% of their initial PCE after 800 h of maximum power point tracking (MPPT) at 25 °C. The approach establishes a unified solution that addresses crystallization precision, ambient compatibility, and industrial manufacturability in perovskite photovoltaics.

High-Performance Perovskite Flat Panel X-Ray Imagers via Blade Coating

Perovskite X-ray detectors are recognized as the most promising candidates for low-dose detectors due to their superior performance. However, it is still full of challenging in the fabrication of flat-panel X-ray imagers (FPXIs), primarily due to the absence of large area thick films that exhibit high uniformity and long-term performance stability. A general synthesis route is urgently needed to grow large-scale halide perovskite thick films directly on a pixeled thin-film transistor (TFT) backplane with high uniformity, closing the gap between the great potential of perovskite X-ray detectors and their entry into the market. In this work, an advanced precursor paste suitable for blade coating is developed to enable high-throughput manufacturing of FPXIs. Highly uniform perovskite films with a thickness of 300-micrometers are directly deposited onto pixeled TFT substrates by the blade-coating method using the above paste, which governs a stable dark current and minimal noise of the X-ray detectors. As a result, (BA)2(MA)9Pb10I31 perovskite X-ray detectors achieved a high sensitivity of 15200 µC Gyair -1 cm-2 and a limit of detection (LoD) of 26.8 nGyair s-1. Moreover, FPXIs with a spatial resolution of 0.95 lp mm-1 (0.475 lp pixel-1) are obtained, which exhibits negligible signal crosstalk and excellent X-ray imaging performance.

High-Performance Oxide Crystal BaTeW2O9 X-ray Detector with High Stability, Low Detection Limit, and Ultralow Dark Current Drift

X-ray detection materials and devices have received widespread attention due to their irreplaceable role in the medical, industrial, and military fields. In this paper, BaTeW2O9 (BTW) crystal containing lone pairs of electrons with large atomic numbers and high density is reported as a new type of oxide crystal X-ray detection material. The anisotropic X-ray detection performance of the BTW single crystal (SC) is systematically studied. At 120 keV hard X-ray photon energy, the BTW SC X-ray detectors along the crystallographic a-, b-, and c-axes directions achieved high sensitivities of 371, 404, and 368 μC Gyair-1 cm-2 respectively. More importantly, no dark current drift phenomenon was observed in the BTW SC X-ray detectors. The dark current drifts along the crystallographic a-, b-, and c-axes directions are as low as 7.81 × 10-9, 8.61 × 10-9, and 7.71 × 10-9 nA cm-1 s-1 V-1, respectively. In addition, the BTW SC X-ray detector has an ultralow detection limit of 21.9 nGyair s-1. Our research provides a new X-ray detection material with potential application value and a new material design strategy for the field of radiation detection.

Chiral-Polar Alternating Cation Intercalation-Type Perovskite Enables Sensitive Self-Driven X-ray Detection with an Ultralow Detection Limit

Metal halide perovskites (MHPs) have shown great potential for direct X-ray detection, but achieving high sensitivity without external bias remains challenging. Chiral-polar alternating cation intercalation (ACI)-type MHPs, with excellent optoelectronic properties and a robust chirality-induced bulk photovoltaic effect (BPVE), offer a promising platform for self-driven X-ray detection. Herein, impressive self-driven X-ray detection performance was achieved by utilizing chiral-polar 2D ACI-type perovskite single crystals of (R-PPA)PAPbBr4 (1R; R-PPA = R-1-phenylpropylamine; PA = propylamine). The chiral R-PPA cations induce the crystallization of 1R in the chiral-polar space group P21, wherein its spontaneous electric polarization further induces a strong BPVE. Consequently, 1R shows remarkable radiation photovoltaics of 0.75 V, which endows its excellent self-driven X-ray detection with a high sensitivity of 417.2 μC Gy-1 cm-2 and a low detection limit of 24.1 nGy s-1, meeting the state-of-the-art level by leveraging its intrinsic photovoltaic effect. These findings highlight the huge potential of chiral-polar ACI-type MHPs in self-driven X-ray detection applications.

Spontaneous Cooling Enables High-Quality Perovskite Wafers for High-Sensitivity X-Ray Detectors with a Low-Detection Limit

Developing high-quality perovskite wafers is essential for integrating perovskite technology throughout the chip industry chain. In this article, a spontaneous cooling strategy with a hot-pressing technique is presented to develop high-purity, wafer-scale, pinhole-free perovskite wafers with a reflective surface. This method can be extended to a variety of perovskite wafers, including organic-inorganic, 2D, and lead-free perovskites. Besides, the size of the wafer with diameters of 10, 15, and 20 mm can be tailored by changing the mold. Furthermore, the mechanism of spontaneous cooling for improving the quality of perovskite wafers is revealed. Finally, the high-quality lead-free Cs3Cu2I5 perovskite wafers demonstrate excellent X-ray detection performances with a high sensitivity of 3433.6 µC Gyair -1 cm-2 and a low detection limit of 33.17 nGyair s-1. Moreover, the Cs3Cu2I5 wafers exhibit outstanding environmental and operational stability even without encapsulation. These research presents a spontaneous cooling strategy to achieve wafer-scale, high-quality perovskites with mirror-like surfaces for X-ray detection, paving the way for integrating perovskites into electronic and optoelectronic devices and promoting the practical application of perovskite X-ray detectors.

Footprints of scanning probe microscopy on halide perovskites

Scanning probe microscopy (SPM) and advanced atomic force microscopy (AFM++) have become pivotal for nanoscale elucidation of the structural, optoelectronic and photovoltaic properties of halide perovskite single crystals and polycrystalline films, both under ex situ and in situ conditions. These techniques reveal detailed information about film topography, compositional mapping, charge distribution, near-field electrical behaviors, cation-lattice interactions, ion dynamics, piezoelectric characteristics, mechanical durability, thermal conductivity, and magnetic properties of doped perovskite lattices. This article outlines the advancements in SPM techniques that deepen our understanding of the optoelectronic and photovoltaic performances of halide perovskites.

Wafer-Sized CsPbBr3/CsPbCl3 Heterojunction: Breaking the Trade-Off between Sensitivity and Dark Current for Efficient X-ray Detector

Polycrystalline lead halide perovskite finds promising use in fabricating X-ray detectors with a large lateral size, adjustable thickness, and diverse synthesis processes. However, a large dark current hinders its development for weak signal detection. Herein, we propose a multistep pressing strategy for manufacturing a CsPbBr3/CsPbCl3 heterojunction wafer for a reduced dark current X-ray detector, and the device keeps a high sensitivity value after the insertion of a barrier by heterojunction; thus, the trade-off between sensitivity and dark current can be broken. The X-ray detector with a metal-semiconductor-metal structure yields a sensitivity of 6.32 × 104 μC Gyair-1 cm-2 at a bias of 12 V, a 1/f noise of 1.02 × 10-13 A/Hz-1/2, and a detection limit of 66.58 nGy s-1. These performance parameters are considerably better than those of a similar X-ray detector based on the single-structure wafer. The improved device performance of the heterostructure X-ray detector is ascribed to the suppressed carrier recombination, enhanced carrier transportation of the heterojunction, and strong X-ray attenuation of the CsPbCl3 layer. The pixel array device is further used in imaging applications. Hence, this study provides an efficient strategy for fabricating heterostructure polycrystalline lead halide perovskite wafers for use in high-performance wafer-based X-ray detectors.

Flexible Single Microwire X-Ray Detector with Ultrahigh Sensitivity for Portable Radiation Detection System

Sensitive, flexible, and low false alarm rate X-ray detector is crucial for medical diagnosis, industrial inspection, and scientific research. However, most semiconductors for X-ray detectors are susceptible to interference from ambient light, and their high thickness hinders their application in wearable electronics. Herein, a flexible visible-blind and ultraviolet-blind X-ray detector based on Indium-doped Gallium oxide (Ga2O3:In) single microwire is prepared. Joint experiment-theory characterizations reveal that the Ga2O3:In microwire possess a high crystal quality, large band gap, and satisfactory stability, and reliability. On this basis, an extraordinary sensitivity of 5.9 × 105 µC Gyair -1 cm-2 and a low detection limit of 67.4 nGyair s-1 are achieved based on the prepared Ag/Ga2O3:In/Ag device, which has outstanding operation stability and excellent high temperature stability. Taking advantage of the flexible properties of the single microwire, a portable X-ray detection system is demonstrated that shows the potential to adapt to flexible and lightweight formats. The proposed X-ray detection system enables real-time monitor for X-rays, which can be displayed on the user interface. More importantly, it has excellent resistance to natural light interference, showing a low false alarm rate. This work provides a feasible method for exploring high-performance flexible integrated micro/nano X-ray detection devices.

Dion-Jacobson Type Lead-Free Double Perovskite with Ultra-Narrow Aromatic Interlayer Spacing for Highly Sensitive and Stable X-ray Detection

The low-toxic and environmentally friendly 2D lead-free perovskite has made significant progress in the exploration of "green" X-ray detectors. However, the gap in detection performance between them and their lead-based analogues remains a matter of concern that cannot be ignored. To reduce this gap, shortening the interlayer spacing to accelerate the migration and collection of X-ray carriers is a promising strategy. Herein, a Dion-Jacobson (DJ) lead-free double perovskite (4-AP)2AgBiBr8 (1, 4-AP = 4-amidinopyridine) with an ultra-narrow interlayer spacing of 3.0 Å, is constructed by utilizing π-conjugated aromatic spacers. Strikingly, the subsequent enhanced carrier transport and increased crystal density lead to X-ray detectors based on bulk single crystals of 1 with a high sensitivity of 1117.3 µC Gy-1 cm-2, superior to the vast majority of similar double perovskites. In particular, the tight connection of the inorganic layers by the divalent cations enhances structural rigidity and stability, further endowing 1 detector with ultralow dark current drift (3.06 × 10-8 nA cm-1 s-1 V-1, 80 V), excellent multiple cycles switching X-ray irradiation stability, as well as long-term environmental stability (maintains over 94% photoresponse after 90 days). This work brings lead-free double perovskites one step closer to realizing efficient practical green applications.

Multiple Interlayer Interactions Enable Highly Stable X-ray Detection in 2D Hybrid Perovskites

Metal halide perovskites have outperformed conventional inorganic semiconductors in direct X-ray detection due to their ease of synthesis and intriguing photoelectric properties. However, the operational instability caused by severe ion migration under a high external electric field is still a big concern for the practical application of perovskite detectors. Here, we report a 2D (BPEA)2PbI4 (BPEA = R-1-(4-bromophenyl)ethylammonium) perovskite with Br-substituted aromatic spacer capable of introducing abundant interactions, e.g., the molecular electrostatic forces between Br atoms and aromatic rings and halogen bonds of Br-I, in the interlayer space, which effectively suppresses ion migration and thus enables superior operational stability. Constructing direct X-ray detectors based on high-quality single crystals of (BPEA)2PbI4 results in a high sensitivity of 1,003 μC Gy-1 cm-2, a low detection limit of 366 nGy s-1, and an ultralow baseline drift of 3.48 × 10-8 nA cm-1 s-1 V-1 at 80 V bias. More strikingly, it also exhibits exceptional operational stability under high flux, long-time X-ray irradiation, and large working voltage. This work shows an integration of multiple interlayer interactions to stabilize perovskite X-ray detectors, providing new insights into the future design of perovskite optoelectronic devices toward practical application.

1D Pb halide perovskite-like materials for high performance X-ray detection

The strategy of bandgap regulation is important for X-ray detection, but has not been reported for 1D Pb halide perovskite materials. In this work, three such materials, 1, 2 and 3, with a tunable bandgap, were fabricated for application in X-ray detection. 3 shows high sensitivity, far superior to commercial X-ray detectors.

Efficient Direct X-ray Detection and Imaging Based on a Lead-Free Electron Donor-Acceptor MOF

Metal-organic frameworks (MOFs) have recently gained extensive attention as potential materials for direct radiation detection due to their strong radiation absorption, long-range order, and chemical tunability. However, it remains challenging to develop a practical MOF-based X-ray direct detector that possesses high X-ray detection efficiency, radiation stability, and environmental friendliness. The integration of donor-acceptor (D-A) pairs into crystalline MOFs is a powerful strategy for the precise fabrication of multifunctional materials with unique optoelectronic properties. Herein, a new lead-free MOF, Cu2I2(TPPA) (CuI-TPPA, TPPA = tris[4-(pyridine-4-yl)phenyl]amine), with a 6-fold interpenetrated structure is designed and synthesized based on the electron donor-acceptor strategy. CuI-TPPA has a large mobility-lifetime (μτ) product of 5.8 × 10-4 cm2 V-1 and a high detection sensitivity of 73.1 μC Gyair-1 cm-2, surpassing that of commercial α-Se detectors. Moreover, the detector remains fairly stable with only a 2% reduction in photocurrent under continuous bias irradiation conditions with a total dose of over 42.83 Gyair. The CuI-TPPA/poly(vinylidene fluoride) flexible composite X-ray detector films are successfully manufactured with different thicknesses. Through multifaceted assessments, the optimal thickness is found with a high detection sensitivity of up to 143.6 μC Gyair-1 cm-2. As proof-of-concept, 11 × 9 pixelated X-ray detectors are fabricated on the same composite film to realize X-ray direct imaging. This work opens up potential applications of MOFs in environmentally friendly and wearable devices for direct X-ray detection and imaging.

Perovskite materials in X-ray detection and imaging: recent progress, challenges, and future prospects

Perovskite materials have attracted significant attention as innovative and efficient X-ray detectors owing to their unique properties compared to traditional X-ray detectors. Herein, chronologically, we present an in-depth analysis of X-ray detection technologies employing organic-inorganic hybrids (OIHs), all-inorganic and lead-free perovskite material-based single crystals (SCs), thin/thick films and wafers. Particularly, this review systematically scrutinizes the advancement of the diverse synthesis methods, structural modifications, and device architectures exploited to enhance the radiation sensing performance. In addition, a critical analysis of the crucial factors affecting the performance of the devices is also provided. Our findings revealed that the improvement from single crystallization techniques dominated the film and wafer growth techniques. The probable reason for this is that SC-based devices display a lower trap density, higher resistivity, large carrier mobility and lifetime compared to film- and wafer-based devices. Ultimately, devices with SCs showed outstanding sensitivity and the lowest detectable dose rate (LDDR). These results are superior to some traditional X-ray detectors such as amorphous selenium and CZT. In addition, the limited performance of film-based devices is attributed to the defect formation in the bulk film, surfaces, and grain boundaries. However, wafer-based devices showed the worst performance because of the formation of voids, which impede the movement of charge carriers. We also observed that by performing structural modification, various research groups achieved high-performance devices together with stability. Finally, by fusing the findings from diverse research works, we provide a valuable resource for researchers in the field of X-ray detection, imaging and materials science. Ultimately, this review will serve as a roadmap for directing the difficulties associated with perovskite materials in X-ray detection and imaging, proposing insights into the recent status, challenges, and promising directions for future research.

Fine Tuning Ag(I)-Sb(III) Hybrid Iodides for Light Detection

Lead-free hybrid double perovskite iodides (HDPIs) have piqued increasing research interest due to their environmental friendliness and high stability. However, such antimony-based HDPIs with strong photocurrent response are currently very limited. Here, we successfully design and construct five Ag(I)-Sb(III)-based HDPIs using two types of cyclic aliphatic amines as A-site templates. Interestingly, these Ag(I)-Sb(III) HDPIs exhibit relatively narrow band gaps, preferred orientation, and high stability after being processed into thin films on the indium tin oxide (ITO) substrate. Notably, under illuminations of a xenon lamp, all HDPIs exhibit considerable photocurrent responses, reaching a maximum difference of 17 μA·cm-2 for ASI 1, which is the highest among lead-free halogen-based organic-inorganic hybrid compounds to date. Combining the considerable photocurrents and the high stability, the optoelectronic applications of two-dimensional Ag(I)-Sb(III) HDPIs can be expected.

Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium

Charge trap materials that can store carriers efficiently and controllably are desired for memory applications. 2D materials are promising for highly compacted and reliable memory mainly due to their ease of constructing atomically uniform interfaces, however, remain unexplored as being charge trap media. Here it is discovered that 2D semiconducting PbI2 is an excellent charge trap material for nonvolatile memory and artificial synapses. It is simple to construct PbI2 -based charge trap devices since no complicated synthesis or additional defect manufacturing are required. As a demonstration, MoS2 /PbI2 device exhibits a large memory window of 120 V, fast write speed of 5 µs, high on-off ratio around 106 , multilevel memory of over 8 distinct states, high reliability with endurance up to 104 cycles and retention over 1.2 × 104 s. It is envisioned that PbI2 with ionic activity caused by the natively formed iodine vacancies is unique to combine with unlimited 2D materials for versatile van der Waals devices with high-integration and multifunctionality.

Realization of Passive X-Ray Detection with a Low Detection Limit in Dion-Jacobson Halide Hybrid Perovskite

Halide hybrid perovskites are a kind of intriguing contenders for X-ray detection, and their low detection limits (LoDs) have played a crucial part in X-ray safety inspection and medical examination. However, there is still a significant challenge in manufacturing perovskite X-ray detectors with low LoDs. Herein, attributed to the bulk photovoltaic effect (BPVE) of a Dion-Jacobson (DJ) type 2D halide hybrid perovskite polar structure (3-methylaminopropylamine)PbBr4 (1), self-powered X-ray detection with low detection limit is successfully realized. Specifically, the crystal-based detector of 1 exhibits a low dark current at zero bias, which reduces the noise current (0.34 pA), leading to a low detection limit (58.3 nGyair s-1 ) which is two orders of magnitude lower than that of under external voltage bias. The combination of BPVE and LoDs of halide hybrid perovskite provides an efficient strategy to achieve passive X-ray detection with low doses.

An interfacial toughening strategy for high stability 2D/3D perovskite X-ray detectors with a carbon nanotube thin film electrode

Single-crystalline metal halide perovskite materials hold great promise for developing next-generation low-dose X-ray detection. To bring this new technology into reality, it is important to improve the durability of perovksite detectors by suppressing the well-known corrosion and ion diffusion problems at the perovskite/electrode interface. For imaging application, it is also imperative to develop new assembling approaches to realise non-planar interconnection between thick perovskite crystals and thin-film transistor (TFT) backplanes. Herein, a flexible and mechanically robust carbon nanotube (CNT) film was proposed to replace noble metal electrodes. The proposed CNT film, whose binder contains a carboxyl group, can form solid contact with a phenethylamine-based two-dimensional (2D) perovskite via amide coupling, thus toughening the perovskite-electrode interface. The resulting CNT/2D-3D perovskite detector shows an applaudable low dark current, high sensitivity, a low dose detection limit and excellent stability, retaining 98% of its initial sensitivity after storage for three months. Moreover, the flexible CNT films are also beneficial for making non-planar interconnection between thick perovskite crystals and TFT backplanes. The proposed flexible CNT thin film electrode thus provides a facile route towards realising a low-dose, high-resolution and highly stable perovskite X-ray detector.

MOF-Assisted Annealing-Free Crystallization Technology of Perovskites toward Efficient and Stable Perovskite Solar Cells

Although annealing is a commonly used crystallization method for perovskite films in perovskite solar cells (PSCs), the high thermal energy consumption and limitations on flexible devices hinder their further industrial application. We herein propose an annealing-free crystallization technology for perovskite films, assisted by the Zr-metal-organic framework (MOF) interface between SnO₂ and the perovskite. It is found that the Zr-MOF interface can accelerate the formation of perovskite intermediates and promote their conversion into perovskite crystals even without annealing. The trap density thus decreases by about one fold, accompanied by significant increases in electron and hole mobilities, resulting in enhanced carrier extraction and suppressed charge recombination. Therefore, the Zr-MOF-based PSC attains a power convention efficiency (PCE) of 20.24%, 2.2 times that (9.26%) of the pristine PSC. Furthermore, the Zr-MOF interface layer can significantly improve the air and thermal stabilities of PSCs. The Zr-MOF-based PSC exhibits 93% of its initial PCE versus 52% for the pristine PSC after 1018 h of storage in air. Additionally, after 360 h of continuous heating at 65 °C, the Zr-MOF-based PSC retains 91% of its initial PCE against 44% for the pristine PSC.