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Zhang K, Zhang T, You J, Zheng X, Zhao M, Zhang L, Kong J, Luo Z, Huang S. Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307587. [PMID: 38084456 DOI: 10.1002/smll.202307587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 11/07/2023] [Indexed: 05/12/2024]
Abstract
2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.
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Affiliation(s)
- Kenan Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Mei Zhao
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, Nanshan, Shenzhen, 518057, China
| | - Shaoming Huang
- Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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Liu D, Chen X, Yan Y, Zhang Z, Jin Z, Yi K, Zhang C, Zheng Y, Wang Y, Yang J, Xu X, Chen J, Lu Y, Wei D, Wee ATS, Wei D. Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation. Nat Commun 2019; 10:1188. [PMID: 30867418 PMCID: PMC6416324 DOI: 10.1038/s41467-019-09016-0] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Accepted: 02/05/2019] [Indexed: 11/29/2022] Open
Abstract
Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe2) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO2/Si, quartz, sapphire, silicon or SiO2/Si with three-dimensional patterns at 300 °C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe2 field-effect transistor are realized with mobility around 56~ 121 cm2 V−1 s−1 and saturated power intensity up to 4.23 × 103 W cm−2. Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with microelectronic process, it has potential for application in future two-dimensional electronics. Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe2 field-effect transistors with mobility up to 121 cm2 V−1 s−1.
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Affiliation(s)
- Donghua Liu
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China.,Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
| | - Xiaosong Chen
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China.,Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
| | - Yaping Yan
- Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, and Institute for Advanced Study, Tongji University, Shanghai, 200092, China.,China-EU Joint Lab for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Zhongwei Zhang
- Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, and Institute for Advanced Study, Tongji University, Shanghai, 200092, China.,China-EU Joint Lab for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Zhepeng Jin
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China.,Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
| | - Kongyang Yi
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China.,Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
| | - Cong Zhang
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China.,Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
| | - Yujie Zheng
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Yao Wang
- International Center for New-Structured Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jun Yang
- Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China
| | - Xiangfan Xu
- Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, and Institute for Advanced Study, Tongji University, Shanghai, 200092, China. .,China-EU Joint Lab for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
| | - Jie Chen
- Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, and Institute for Advanced Study, Tongji University, Shanghai, 200092, China.,China-EU Joint Lab for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Yunhao Lu
- International Center for New-Structured Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Dapeng Wei
- Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China.
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China. .,Department of Macromolecular Science, Fudan University, Shanghai, 200433, China.
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