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Liu H, Zhao J, Ly TH. Clean Transfer of Two-Dimensional Materials: A Comprehensive Review. ACS Nano 2024. [PMID: 38655635 DOI: 10.1021/acsnano.4c01000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.
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Affiliation(s)
- Haijun Liu
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
- State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, China
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Choi W, O KK. Enabling Applications of Electromagnetic Waves at 0.3-1.0 THz Using Silicon Electronic Integrated Circuits. ACS Photonics 2024; 11:1362-1375. [PMID: 38645999 PMCID: PMC11027913 DOI: 10.1021/acsphotonics.3c01129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 03/05/2024] [Accepted: 03/06/2024] [Indexed: 04/23/2024]
Abstract
Over the past 15 years, the output power of silicon submillimeter-wave electronics has increased by a factor greater than 1000 reaching -3.9 dBm at 440 GHz for a single unit in CMOS and -10.7 dBm at 1.01 THz for a 42-element array in SiGe BiCMOS. The smallest power of a 1 kHz bandwidth signal at 420 GHz that can be detected has improved by 100 million times. These and the expected improvements from the ongoing activities should be sufficient to support high resolution imaging with a range of up to several hundred meters, gas sensing up to ∼1 THz, and communication over ∼1000 m. The silicon IC technologies enable integration of complex systems into a small form factor and reduction of manufacturing cost. When broad deployment of submillimeter wave systems for everyday life applications becomes necessary, the silicon IC infrastructure will be the most capable to support the high-volume manufacturing need.
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Affiliation(s)
- Wooyeol Choi
- Department
of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
| | - Kenneth K. O
- Department
of Electrical and Computer Engineering and Texas Analog Center of
Excellence, The University of Texas at Dallas, Richardson, Texas 75080, United States
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3
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Lu C, Wang X, Liu XY. Flexible Meso Electronics and Photonics Based on Cocoon Silk and Applications. ACS Biomater Sci Eng 2024. [PMID: 38597279 DOI: 10.1021/acsbiomaterials.4c00254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Flexible electronics, applicable to enlarged health, AI big data medications, etc., have been one of the most important technologies of this century. Due to its particular mechanical properties, biocompatibility, and biodegradability, cocoon silk (or SF, silk fibroin) plays a key role in flexible electronics/photonics. The review begins with an examination of the hierarchical meso network structures of SF materials and introduces the concepts of meso reconstruction, meso doping, and meso hybridization based on the correlation between the structure and performance of silk materials. The SF meso functionalization was developed according to intermolecular nuclear templating. By implementation of the techniques of meso reconstruction and functionalization in the refolding of SF materials, extraordinary performance can be achieved. Relying on this strategy, particularly designed flexible electronic and photonic components can be developed. This review covers the latest ideas and technologies of meso flexible electronics and photonics based on SF materials/meso functionalization. As silk materials are biocompatible and human skin-friendly, SF meso flexible electronic/photonic components can be applied to wearable or implanted devices. These devices are applicable in human physiological signals and activities sensing/monitoring. In the case of human-machine interaction, the devices can be applicable in in-body information transmission, computation, and storage, with the potential for the combination of artificial intelligence and human intelligence.
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Affiliation(s)
- Changsheng Lu
- State Key Laboratory of Marine Environmental Science (MEL), College of Ocean and Earth Sciences, Xiamen University, Xiamen, Fujian 361102, P.R. China
| | - Xiao Wang
- State Key Laboratory of Marine Environmental Science (MEL), College of Ocean and Earth Sciences, Xiamen University, Xiamen, Fujian 361102, P.R. China
| | - Xiang Yang Liu
- State Key Laboratory of Marine Environmental Science (MEL), College of Ocean and Earth Sciences, Xiamen University, Xiamen, Fujian 361102, P.R. China
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Pinheiro T, Morais M, Silvestre S, Carlos E, Coelho J, Almeida HV, Barquinha P, Fortunato E, Martins R. Direct Laser Writing: From Materials Synthesis and Conversion to Electronic Device Processing. Adv Mater 2024:e2402014. [PMID: 38551106 DOI: 10.1002/adma.202402014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 03/18/2024] [Indexed: 04/25/2024]
Abstract
Direct Laser Writing (DLW) has been increasingly selected as a microfabrication route for efficient, cost-effective, high-resolution material synthesis and conversion. Concurrently, lasers participate in the patterning and assembly of functional geometries in several fields of application, of which electronics stand out. In this review, recent advances and strategies based on DLW for electronics microfabrication are surveyed and outlined, based on laser material growth strategies. First, the main DLW parameters influencing material synthesis and transformation mechanisms are summarized, aimed at selective, tailored writing of conductive and semiconducting materials. Additive and transformative DLW processing mechanisms are discussed, to open space to explore several categories of materials directly synthesized or transformed for electronics microfabrication. These include metallic conductors, metal oxides, transition metal chalcogenides and carbides, laser-induced graphene, and their mixtures. By accessing a wide range of material types, DLW-based electronic applications are explored, including processing components, energy harvesting and storage, sensing, and bioelectronics. The expanded capability of lasers to participate in multiple fabrication steps at different implementation levels, from material engineering to device processing, indicates their future applicability to next-generation electronics, where more accessible, green microfabrication approaches integrate lasers as comprehensive tools.
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Affiliation(s)
- Tomás Pinheiro
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Maria Morais
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Sara Silvestre
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Emanuel Carlos
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - João Coelho
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Henrique V Almeida
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Pedro Barquinha
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Elvira Fortunato
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
| | - Rodrigo Martins
- i3N|CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516, Portugal
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Hasan MM, Wang C, Pala N, Shur M. Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics. Nanomaterials (Basel) 2024; 14:460. [PMID: 38470789 DOI: 10.3390/nano14050460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 02/21/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240-600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.
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Affiliation(s)
| | - Chunlei Wang
- Mechanical and Aerospace Engineering, University of Miami, Coral Gables, FL 33146, USA
| | - Nezih Pala
- Electrical & Computer Engineering, Florida International University, Miami, FL 33174, USA
| | - Michael Shur
- Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
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Yan Y, Han M, Jiang Y, Ng ELL, Zhang Y, Owh C, Song Q, Li P, Loh XJ, Chan BQY, Chan SY. Electrically Conductive Polymers for Additive Manufacturing. ACS Appl Mater Interfaces 2024; 16:5337-5354. [PMID: 38284988 DOI: 10.1021/acsami.3c13258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
The use of electrically conductive polymers (CPs) in the development of electronic devices has attracted significant interest due to their unique intrinsic properties, which result from the synergistic combination of physicochemical properties in conventional polymers with the electronic properties of metals or semiconductors. Most conventional methods adopted for the fabrication of devices with nonplanar morphologies are still challenged by the poor ionic/electronic mobility of end products. Additive manufacturing (AM) brings about exciting prospects to the realm of CPs by enabling greater design freedom, more elaborate structures, quicker prototyping, relatively low cost, and more environmentally friendly electronic device creation. A growing variety of AM technologies are becoming available for three-dimensional (3D) printing of conductive devices, i.e., vat photopolymerization (VP), material extrusion (ME), powder bed fusion (PBF), material jetting (MJ), and lamination object manufacturing (LOM). In this review, we provide an overview of the recent research progress in the area of CPs developed for AM, which advances the design and development of future electronic devices. We consider different AM techniques, vis-à-vis, their development progress and respective challenges in printing CPs. We also discuss the material requirements and notable advances in 3D printing of CPs, as well as their potential electronic applications including wearable electronics, sensors, energy storage and conversion devices, etc. This review concludes with an outlook on AM of CPs.
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Affiliation(s)
- Yinjia Yan
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering (IBME), and Ningbo Institute, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Miao Han
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering (IBME), and Ningbo Institute, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yixue Jiang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Materials Science and Engineering, College of Design and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Evelyn Ling Ling Ng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yanni Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering (IBME), and Ningbo Institute, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Cally Owh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Biomedical Engineering, College of Design and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Qing Song
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering (IBME), and Ningbo Institute, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Peng Li
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering (IBME), and Ningbo Institute, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Benjamin Qi Yu Chan
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Siew Yin Chan
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering (IBME), and Ningbo Institute, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
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Langdon RL, DiSabella MT, Strelzik JA. Screen time and pediatric headache: A scoping review of the literature. Headache 2024; 64:211-225. [PMID: 38299747 DOI: 10.1111/head.14674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 12/08/2023] [Accepted: 12/13/2023] [Indexed: 02/02/2024]
Abstract
OBJECTIVE The aim of this study was to summarize the evidence regarding screen use as a contributing factor in pediatric headache and migraine. BACKGROUND Screen exposure is often reported as a headache trigger, though there is no current consensus in terms of how screen type, duration, or frequency influences pediatric headache and the associated burden of disease. METHODS A systematic search in PubMed, Scopus, Cochrane Library, ProQuest Health and Medical Database, and Google Scholar was performed through November 2022 in accordance with Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) statement. All English-language articles of pediatric patients aged ≤18 years evaluating screen use in relation to headache were included. RESULTS A total of 48 studies were included. Nearly all studies were cross-sectional and represented international samples. The strongest association between screen use and headache found was for duration of use, and computer use emerged as the most common device type related to headache. While there were mixed findings related to screen use and specific headache diagnosis, migraine appeared to confer a higher risk. Across studies, there were insufficient data to assess the impact of screen use on headache frequency or headache-related disability. Several studies demonstrated changes in screen use and headache patterns related to the COVID-19 pandemic and computer vision syndrome was commonly reported. CONCLUSIONS While there is preliminary evidence supporting possible associations between screen use and pediatric headache, there are several limitations in the present review including a lack of prospective and randomized controlled trials to better demonstrate causal relationships as well as methodological limitations with significant variability in how both headache and screen use are defined and measured. Future studies including real-time screen use and device monitoring are needed to better understand the influence of screen use behaviors on pediatric headache and to help further define best-use guidelines around these technologies.
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Affiliation(s)
- Raquel L Langdon
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - Marc T DiSabella
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - Jeffrey A Strelzik
- Department of Neurology, Children's National Hospital, Washington, DC, USA
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Edwards PJ, Roberts I, Clarke MJ, DiGuiseppi C, Woolf B, Perkins C. Methods to increase response to postal and electronic questionnaires. Cochrane Database Syst Rev 2023; 11:MR000008. [PMID: 38032037 PMCID: PMC10687884 DOI: 10.1002/14651858.mr000008.pub5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
BACKGROUND Self-administered questionnaires are widely used to collect data in epidemiological research, but non-response reduces the effective sample size and can introduce bias. Finding ways to increase response to postal and electronic questionnaires would improve the quality of epidemiological research. OBJECTIVES To identify effective strategies to increase response to postal and electronic questionnaires. SEARCH METHODS We searched 14 electronic databases up to December 2021 and manually searched the reference lists of relevant trials and reviews. We contacted the authors of all trials or reviews to ask about unpublished trials; where necessary, we also contacted authors to confirm the methods of allocation used and to clarify results presented. SELECTION CRITERIA Randomised trials of methods to increase response to postal or electronic questionnaires. We assessed the eligibility of each trial using pre-defined criteria. DATA COLLECTION AND ANALYSIS We extracted data on the trial participants, the intervention, the number randomised to intervention and comparison groups and allocation concealment. For each strategy, we estimated pooled odds ratios (OR) and 95% confidence intervals (CI) in a random-effects model. We assessed evidence for selection bias using Egger's weighted regression method and Begg's rank correlation test and funnel plot. We assessed heterogeneity amongst trial odds ratios using a Chi2 test and quantified the degree of inconsistency between trial results using the I2 statistic. MAIN RESULTS Postal We found 670 eligible trials that evaluated over 100 different strategies of increasing response to postal questionnaires. We found substantial heterogeneity amongst trial results in half of the strategies. The odds of response almost doubled when: using monetary incentives (odds ratio (OR) 1.86; 95% confidence interval (CI) 1.73 to 1.99; heterogeneity I2 = 85%); using a telephone reminder (OR 1.96; 95% CI 1.03 to 3.74); and when clinical outcome questions were placed last (OR 2.05; 95% CI 1.00 to 4.24). The odds of response increased by about half when: using a shorter questionnaire (OR 1.58; 95% CI 1.40 to 1.78); contacting participants before sending questionnaires (OR 1.36; 95% CI 1.23 to 1.51; I2 = 87%); incentives were given with questionnaires (i.e. unconditional) rather than when given only after participants had returned their questionnaire (i.e. conditional on response) (OR 1.53; 95% CI 1.35 to 1.74); using personalised SMS reminders (OR 1.53; 95% CI 0.97 to 2.42); using a special (recorded) delivery service (OR 1.68; 95% CI 1.36 to 2.08; I2 = 87%); using electronic reminders (OR 1.60; 95% CI 1.10 to 2.33); using intensive follow-up (OR 1.69; 95% CI 0.93 to 3.06); using a more interesting/salient questionnaire (OR 1.73; 95% CI 1.12 to 2.66); and when mentioning an obligation to respond (OR 1.61; 95% CI 1.16 to 2.22). The odds of response also increased with: non-monetary incentives (OR 1.16; 95% CI 1.11 to 1.21; I2 = 80%); a larger monetary incentive (OR 1.24; 95% CI 1.15 to 1.33); a larger non-monetary incentive (OR 1.15; 95% CI 1.00 to 1.33); when a pen was included (OR 1.44; 95% CI 1.38 to 1.50); using personalised materials (OR 1.15; 95% CI 1.09 to 1.21; I2 = 57%); using a single-sided rather than a double-sided questionnaire (OR 1.13; 95% CI 1.02 to 1.25); using stamped return envelopes rather than franked return envelopes (OR 1.23; 95% CI 1.13 to 1.33; I2 = 69%), assuring confidentiality (OR 1.33; 95% CI 1.24 to 1.42); using first-class outward mailing (OR 1.11; 95% CI 1.02 to 1.21); and when questionnaires originated from a university (OR 1.32; 95% CI 1.13 to 1.54). The odds of response were reduced when the questionnaire included questions of a sensitive nature (OR 0.94; 95% CI 0.88 to 1.00). Electronic We found 88 eligible trials that evaluated over 30 different ways of increasing response to electronic questionnaires. We found substantial heterogeneity amongst trial results in half of the strategies. The odds of response tripled when: using a brief letter rather than a detailed letter (OR 3.26; 95% CI 1.79 to 5.94); and when a picture was included in an email (OR 3.05; 95% CI 1.84 to 5.06; I2 = 19%). The odds of response almost doubled when: using monetary incentives (OR 1.88; 95% CI 1.31 to 2.71; I2 = 79%); and using a more interesting topic (OR 1.85; 95% CI 1.52 to 2.26). The odds of response increased by half when: using non-monetary incentives (OR 1.60; 95% CI 1.25 to 2.05); using shorter e-questionnaires (OR 1.51; 95% CI 1.06 to 2.16; I2 = 94%); and using a more interesting e-questionnaire (OR 1.85; 95% CI 1.52 to 2.26). The odds of response increased by a third when: offering survey results as an incentive (OR 1.36; 95% CI 1.16 to 1.59); using a white background (OR 1.31; 95% CI 1.10 to 1.56); and when stressing the benefits to society of response (OR 1.38; 95% CI 1.07 to 1.78; I2 = 41%). The odds of response also increased with: personalised e-questionnaires (OR 1.24; 95% CI 1.17 to 1.32; I2 = 41%); using a simple header (OR 1.23; 95% CI 1.03 to 1.48); giving a deadline (OR 1.18; 95% CI 1.03 to 1.34); and by giving a longer time estimate for completion (OR 1.25; 95% CI 0.96 to 1.64). The odds of response were reduced when: "Survey" was mentioned in the e-mail subject (OR 0.81; 95% CI 0.67 to 0.97); when the email or the e-questionnaire was from a male investigator, or it included a male signature (OR 0.55; 95% CI 0.38 to 0.80); and by using university sponsorship (OR 0.84; 95%CI 0.69 to 1.01). The odds of response using a postal questionnaire were over twice those using an e-questionnaire (OR 2.33; 95% CI 2.25 to 2.42; I2 = 98%). Response also increased when: providing a choice of response mode (electronic or postal) rather than electronic only (OR 1.76 95% CI 1.67 to 1.85; I2 = 97%); and when administering the e-questionnaire by computer rather than by smartphone (OR 1.62 95% CI 1.36 to 1.94). AUTHORS' CONCLUSIONS Researchers using postal and electronic questionnaires can increase response using the strategies shown to be effective in this Cochrane review.
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Affiliation(s)
- Philip James Edwards
- Faculty of Epidemiology and Population Health, London School of Hygiene & Tropical Medicine, London, UK
| | - Ian Roberts
- Faculty of Epidemiology and Population Health, London School of Hygiene & Tropical Medicine, London, UK
| | - Mike J Clarke
- Centre for Public Health, Queens University Belfast, Belfast, UK
| | - Carolyn DiGuiseppi
- Colorado School of Public Health, University of Colorado Anschutz Medical Campus, Aurora, CO, USA
| | - Benjamin Woolf
- School of Psychological Science, University of Bristol, Bristol, UK
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Wang HL, Wang Y. Touchless Artificial Perception beyond Fingertip Probing. ACS Nano 2023; 17:20723-20733. [PMID: 37901955 DOI: 10.1021/acsnano.3c05760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
Touchless perception technology allows us to acquire information beyond the contact interfaces, making it ideal for scenarios where physical engagements are not possible. Unlike tactile devices, which have so far achieved impressive results, touchless strategies are fascinating yet underdeveloped. We envisage that touchless technologies could be powerful supplements to current haptics. In this Perspective, we include emerging touchless electronics, aiming to provide a broader and comprehensive picture toward artificial perceptual realm. We overview popular touchless protocols, sketch what could be detected by touchless probing, and summarize their latest spectacular achievements. In addition, we present the promises and challenges posed by touchless technologies and discuss possible directions for their future deployments.
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Affiliation(s)
- Hai Lu Wang
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yifan Wang
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
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Zhao N, Zhang H, Yang S, Sun Y, Zhao G, Fan W, Yan Z, Lin J, Wan C. Direct Induction of Porous Graphene from Mechanically Strong and Waterproof Biopaper for On-Chip Multifunctional Flexible Electronics. Small 2023; 19:e2300242. [PMID: 37381614 DOI: 10.1002/smll.202300242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Revised: 06/05/2023] [Indexed: 06/30/2023]
Abstract
Graphene with a 3D porous structure is directly laser-induced on lignocellulosic biopaper under ambient conditions and is further explored for multifunctional biomass-based flexible electronics. The mechanically strong, flexible, and waterproof biopaper is fabricated by surface-functionalizing cellulose with lignin-based epoxy acrylate (LBEA). This composite biopaper shows as high as a threefold increase in tensile strength and excellent waterproofing compared with pure cellulose one. Direct laser writing (DLW) rapidly induces porous graphene from the biopaper in a single step. The porous graphene shows an interconnected carbon network, well-defined graphene domains, and high electrical conductivity (e.g., ≈3 Ω per square), which can be tuned by lignin precursors and loadings as well as lasing conditions. The biopaper in situ embedded with porous graphene is facilely fabricated into flexible electronics for on-chip and paper-based applications. The biopaper-based electronic devices, including the all-solid-state planer supercapacitor, electrochemical and strain biosensors, and Joule heater, show great performances. This study demonstrates the facile, versatile, and low-cost fabrication of multifunctional graphene-based electronics from lignocellulose-based biopaper.
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Affiliation(s)
- Nan Zhao
- Department of Chemical and Biomedical Engineering, University of Missouri, 1406 East Rollins Street, Columbia, MO, 65211, USA
- School of Ecology and Environment, Zhengzhou University, 100 Kexue Blvd, Zhengzhou, Henan Province, 450001, China
| | - Hanwen Zhang
- Department of Chemical and Biomedical Engineering, University of Missouri, 1406 East Rollins Street, Columbia, MO, 65211, USA
| | - Shuhong Yang
- Department of Chemical and Biomedical Engineering, University of Missouri, 1406 East Rollins Street, Columbia, MO, 65211, USA
| | - Yisheng Sun
- Department of Chemical and Biomedical Engineering, University of Missouri, 1406 East Rollins Street, Columbia, MO, 65211, USA
| | - Ganggang Zhao
- Department of Mechanical and Aerospace Engineering, University of Missouri, 416 South 6th Street, Columbia, MO, 65211, USA
| | - Wenjun Fan
- Department of Chemical and Biomedical Engineering, University of Missouri, 1406 East Rollins Street, Columbia, MO, 65211, USA
| | - Zheng Yan
- Department of Chemical and Biomedical Engineering, University of Missouri, 1406 East Rollins Street, Columbia, MO, 65211, USA
- Department of Mechanical and Aerospace Engineering, University of Missouri, 416 South 6th Street, Columbia, MO, 65211, USA
| | - Jian Lin
- Department of Mechanical and Aerospace Engineering, University of Missouri, 416 South 6th Street, Columbia, MO, 65211, USA
| | - Caixia Wan
- Department of Chemical and Biomedical Engineering, University of Missouri, 1406 East Rollins Street, Columbia, MO, 65211, USA
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11
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Zhang Q, Li X, Zheng Y, Tu Q, Wei S, Shi H, Tang W, Chen L. PANI-Coated VO x Nanobelts with Core-Shell Architecture for Flexible All-Solid-State Supercapacitor. Micromachines (Basel) 2023; 14:1856. [PMID: 37893292 PMCID: PMC10609290 DOI: 10.3390/mi14101856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 09/23/2023] [Accepted: 09/25/2023] [Indexed: 10/29/2023]
Abstract
As a typical pseudocapacitor material, VOx possesses mixed valence states, making it an ideal electrode material for symmetric screen-printed supercapacitors. However, its high internal resistance and low energy density are the main hurdles to its widespread application. In this study, a two-dimensional PANI@VOx nanobelt with a core-shell architecture was constructed via a two-step route. This strategy involves the preparation of VOx using a solvothermal method, and a subsequent in situ polymerization process of the PANI. By virtue of the synergistic effect between the VOx core and the PANI shell, the optimal VOx@PANI has an enhanced conductivity of 0.7 ± 0.04 S/Ω, which can deliver a high specific capacitance of 347.5 F/g at 0.5 A/g, a decent cycling life of ~72.0%, and an outstanding Coulomb efficiency of ~100% after 5000 cycles at 5 A/g. Moreover, a flexible all-solid-state symmetric supercapacitor (VOx@PANI SSC) with an in-planar interdigitated structure was screen-printed and assembled on a nickel current collector; it yielded a remarkable areal energy density of 115.17 μWh/cm2 at an areal power density of 0.39 mW/cm2, and possessed outstanding flexibility and mechanical performance. Notably, a "Xiaomi" hygrothermograph (3.0 V) was powered easily by tandem SSCs with an operating voltage of 3.1 V. Therefore, this advanced pseudocapacitor material with core-shell architecture opens novel ideas for flexible symmetric supercapacitors in powering portable/wearable products.
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Affiliation(s)
| | | | | | | | | | | | - Wentao Tang
- School of Electronic Information Engineering, Jingchu University of Technology, Jingmen 448000, China; (Q.Z.); (X.L.); (Y.Z.); (Q.T.); (S.W.); (H.S.)
| | - Liangzhe Chen
- School of Electronic Information Engineering, Jingchu University of Technology, Jingmen 448000, China; (Q.Z.); (X.L.); (Y.Z.); (Q.T.); (S.W.); (H.S.)
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12
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Fu W, John M, Maddumapatabandi TD, Bussolotti F, Yau YS, Lin M, Johnson Goh KE. Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition. ACS Nano 2023; 17:16348-16368. [PMID: 37646426 DOI: 10.1021/acsnano.3c04581] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Affiliation(s)
- Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Mark John
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
| | - Thathsara D Maddumapatabandi
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Fabio Bussolotti
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Yong Sean Yau
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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13
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Mattinen M, Schulpen JJPM, Dawley RA, Gity F, Verheijen MA, Kessels WMM, Bol AA. Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS 2 Thin Films at 150 °C. ACS Appl Mater Interfaces 2023; 15:35565-35579. [PMID: 37459249 PMCID: PMC10375433 DOI: 10.1021/acsami.3c02466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable methods capable of depositing MoS2 at low temperatures are scarce. Herein, we present a toolbox of advanced plasma-enhanced atomic layer deposition (ALD) processes, producing wafer-scale polycrystalline MoS2 films of accurately controlled thickness. Our ALD processes are based on two individually controlled plasma exposures, one optimized for deposition and the other for modification. In this way, film properties can be tailored toward different applications at a very low deposition temperature of 150 °C. For the modification step, either H2 or Ar plasma can be used to combat excess sulfur incorporation and crystallize the films. Using H2 plasma, a higher degree of crystallinity compared with other reported low-temperature processes is achieved. Applying H2 plasma steps periodically instead of every ALD cycle allows for control of the morphology and enables deposition of smooth, polycrystalline MoS2 films. Using an Ar plasma instead, more disordered MoS2 films are deposited, which show promise for the electrochemical hydrogen evolution reaction. For electronics, our processes enable control of the carrier density from 6 × 1016 to 2 × 1021 cm-3 with Hall mobilities up to 0.3 cm2 V-1 s-1. The process toolbox forms a basis for rational design of low-temperature transition metal dichalcogenide deposition processes compatible with a range of substrates and applications.
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Affiliation(s)
- Miika Mattinen
- Department of Applied Physics and Science Education, Eindhoven University of Technology, PO Box 513, Eindhoven 5600 MB, The Netherlands
| | - Jeff J P M Schulpen
- Department of Applied Physics and Science Education, Eindhoven University of Technology, PO Box 513, Eindhoven 5600 MB, The Netherlands
| | - Rebecca A Dawley
- Department of Chemistry, University of Michigan, 930 North University Avenue, Ann Arbor, Michigan 48109-1055, United States
| | - Farzan Gity
- Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland
| | - Marcel A Verheijen
- Department of Applied Physics and Science Education, Eindhoven University of Technology, PO Box 513, Eindhoven 5600 MB, The Netherlands
- Eurofins Materials Science Netherlands, High Tech Campus 11, Eindhoven 5656 AE, The Netherlands
| | - Wilhelmus M M Kessels
- Department of Applied Physics and Science Education, Eindhoven University of Technology, PO Box 513, Eindhoven 5600 MB, The Netherlands
| | - Ageeth A Bol
- Department of Applied Physics and Science Education, Eindhoven University of Technology, PO Box 513, Eindhoven 5600 MB, The Netherlands
- Department of Chemistry, University of Michigan, 930 North University Avenue, Ann Arbor, Michigan 48109-1055, United States
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14
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Bressi AC, Dallinger A, Steksova Y, Greco F. Bioderived Laser-Induced Graphene for Sensors and Supercapacitors. ACS Appl Mater Interfaces 2023. [PMID: 37471123 PMCID: PMC10401514 DOI: 10.1021/acsami.3c07687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
The maskless and chemical-free conversion and patterning of synthetic polymer precursors into laser-induced graphene (LIG) via laser-induced pyrolysis is a relatively new but growing field. Bioderived precursors from lignocellulosic materials can also be converted to LIG, opening a path to sustainable and environmentally friendly applications. This review is designed as a starting point for researchers who are not familiar with LIG and/or who wish to switch to sustainable bioderived precursors for their applications. Bioderived precursors are described, and their performances (mainly crystallinity and sheet resistance of the obtained LIG) are compared. The three main fields of application are reviewed: supercapacitors and electrochemical and physical sensors. The key advantages and disadvantages of each precursor for each application are discussed and compared to those of a benchmark of polymer-derived LIG. LIG from bioderived precursors can match, or even outperform, its synthetic analogue and represents a viable and sometimes better alternative, also considering its low cost and biodegradability.
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Affiliation(s)
- Anna Chiara Bressi
- The Biorobotics Institute, Scuola Superiore Sant'Anna, Viale R. Piaggio 34, 56025 Pontedera, Italy
- Department of Excellence in Robotics & AI, Scuola Superiore Sant'Anna, Piazza Martiri della Libertà 33, 56127 Pisa, Italy
| | - Alexander Dallinger
- Institute of Solid State Physics, NAWI Graz, Graz University of Technology, Petergasse 16, Graz 8010, Austria
| | - Yulia Steksova
- The Biorobotics Institute, Scuola Superiore Sant'Anna, Viale R. Piaggio 34, 56025 Pontedera, Italy
- Department of Excellence in Robotics & AI, Scuola Superiore Sant'Anna, Piazza Martiri della Libertà 33, 56127 Pisa, Italy
| | - Francesco Greco
- The Biorobotics Institute, Scuola Superiore Sant'Anna, Viale R. Piaggio 34, 56025 Pontedera, Italy
- Department of Excellence in Robotics & AI, Scuola Superiore Sant'Anna, Piazza Martiri della Libertà 33, 56127 Pisa, Italy
- Institute of Solid State Physics, NAWI Graz, Graz University of Technology, Petergasse 16, Graz 8010, Austria
- Interdisciplinary Center on Sustainability and Climate, Scuola Superiore Sant'Anna, Piazza Martiri della Libertà 33, 56127 Pisa, Italy
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15
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Zhu H, Fan L, Wang K, Liu H, Zhang J, Yan S. Progress in the Synthesis and Application of Tellurium Nanomaterials. Nanomaterials (Basel) 2023; 13:2057. [PMID: 37513066 PMCID: PMC10384241 DOI: 10.3390/nano13142057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 07/04/2023] [Accepted: 07/04/2023] [Indexed: 07/30/2023]
Abstract
In recent decades, low-dimensional nanodevices have shown great potential to extend Moore's Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type narrow bandgap semiconductor, tellurium nanostructure has outstanding electrical properties, controllable bandgap, and good environmental stability. With the addition of methods for synthesizing various emerging tellurium nanostructures with controllable size, shape, and structure, tellurium nanomaterials show great application prospects in next-generation electronics and optoelectronic devices. For tellurium-based nanomaterials, scanning electron microscopy and transmission electron microscopy are the main characterization methods for their morphology. In this paper, the controllable synthesis methods of different tellurium nanostructures are reviewed, and the latest progress in the application of tellurium nanostructures is summarized. The applications of tellurium nanostructures in electronics and optoelectronics, including field-effect transistors, photodetectors, and sensors, are highlighted. Finally, the future challenges, opportunities, and development directions of tellurium nanomaterials are prospected.
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Affiliation(s)
- Hongliang Zhu
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Fan
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Kaili Wang
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Hao Liu
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jiawei Zhang
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Shancheng Yan
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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16
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Sorajja P, Chugh Y, Burns M, Hamid N, Bae R. Simple Maneuver to Improve TriClip Eligibility in Patients With Cardiac Implantable Electronic Device Leads. Circ Cardiovasc Interv 2023; 16:e012950. [PMID: 37339235 DOI: 10.1161/circinterventions.123.012950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Affiliation(s)
- Paul Sorajja
- Valve Science Center, Minneapolis Heart Institute Foundation, MN. Allina Health Minneapolis Heart Institute at AbbottNorthwestern Hospital, MN
| | - Yashasvi Chugh
- Valve Science Center, Minneapolis Heart Institute Foundation, MN. Allina Health Minneapolis Heart Institute at AbbottNorthwestern Hospital, MN
| | - Marcus Burns
- Valve Science Center, Minneapolis Heart Institute Foundation, MN. Allina Health Minneapolis Heart Institute at AbbottNorthwestern Hospital, MN
| | - Nadira Hamid
- Valve Science Center, Minneapolis Heart Institute Foundation, MN. Allina Health Minneapolis Heart Institute at AbbottNorthwestern Hospital, MN
| | - Richard Bae
- Valve Science Center, Minneapolis Heart Institute Foundation, MN. Allina Health Minneapolis Heart Institute at AbbottNorthwestern Hospital, MN
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17
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Mai W, Schwartz L, Kneeland C, Meyers-Laplace T, Brusa D, Davis M, Ryan J, Nelson C, Vaidya V, Sorajja D, Cragun K, Del Carpio Munoz F, Cha YM, Jhawar N, Kusumoto F. Impact of CIED Field Advisories: Unreimbursed Costs to Medical Systems. Circ Arrhythm Electrophysiol 2023:e011764. [PMID: 37254778 DOI: 10.1161/circep.122.011764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Affiliation(s)
- William Mai
- Departments of Internal Medicine, Mayo Clinic, Jacksonville, FL. (W.M.)
- Cardiovascular Diseases, Mayo Clinic, Jacksonville, FL. (W.M., T.M.-L., N.J., F.K.)
| | - Linda Schwartz
- Department of Cardiovascular Diseases, Mayo Clinic, Scottsdale, AZ (L.S., D.B., M.D., D.S.)
| | - Christine Kneeland
- Department of Cardiovascular Diseases, Mayo Clinic, Rochester, MN. (V.V., K.C., F.D.C.M., Y.-m.C.)
| | | | - Denise Brusa
- Department of Cardiovascular Diseases, Mayo Clinic, Scottsdale, AZ (L.S., D.B., M.D., D.S.)
| | - Megan Davis
- Department of Cardiovascular Diseases, Mayo Clinic, Scottsdale, AZ (L.S., D.B., M.D., D.S.)
| | - James Ryan
- Department of Health Sciences Research, Mayo Clinic, Rochester, MN. (C.K., J.R., C.N.)
| | - Christine Nelson
- Department of Health Sciences Research, Mayo Clinic, Rochester, MN. (C.K., J.R., C.N.)
| | - Vaibhov Vaidya
- Department of Cardiovascular Diseases, Mayo Clinic, Rochester, MN. (V.V., K.C., F.D.C.M., Y.-m.C.)
| | - Dan Sorajja
- Department of Cardiovascular Diseases, Mayo Clinic, Scottsdale, AZ (L.S., D.B., M.D., D.S.)
| | - Kevin Cragun
- Department of Health Sciences Research, Mayo Clinic, Rochester, MN. (C.K., J.R., C.N.)
| | - Freddy Del Carpio Munoz
- Department of Cardiovascular Diseases, Mayo Clinic, Rochester, MN. (V.V., K.C., F.D.C.M., Y.-m.C.)
| | - Yong-Mei Cha
- Department of Cardiovascular Diseases, Mayo Clinic, Rochester, MN. (V.V., K.C., F.D.C.M., Y.-m.C.)
| | - Nikita Jhawar
- Cardiovascular Diseases, Mayo Clinic, Jacksonville, FL. (W.M., T.M.-L., N.J., F.K.)
| | - Fred Kusumoto
- Cardiovascular Diseases, Mayo Clinic, Jacksonville, FL. (W.M., T.M.-L., N.J., F.K.)
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18
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Tafferner Z, Balázs I, Krammer O, Géczy A. Can ChatGPT Help in Electronics Research and Development? A Case Study with Applied Sensors. Sensors (Basel) 2023; 23:4879. [PMID: 37430793 DOI: 10.3390/s23104879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2023] [Revised: 05/05/2023] [Accepted: 05/12/2023] [Indexed: 07/12/2023]
Abstract
In this paper, we investigated the applicability of ChatGPT AI in electronics research and development via a case study of applied sensors in embedded electronic systems, a topic that is rarely mentioned in the recent literature, thus providing new insight for professionals and academics. The initial electronics-development tasks of a smart home project were prompted to the ChatGPT system to find out its capabilities and limitations. We wanted to obtain detailed information on the central processing controller units and the actual sensors usable for the specific project, their specifications and recommendations on the hardware and software design flow additionally. Furthermore, an extensive literature survey was requested to see if the bot could offer scientific papers covering the given topic. It was found that the ChatGPT responded with proper recommendations on controllers. However, the suggested sensor units, the hardware and software design were only partially acceptable, with occasional errors in specifications and generated code. The results of the literature survey showed that non-acceptable, fabricated citations (fake authors list, title, journal details and DOI-Digital Object identifier) were presented by the bot. The paper provides a detailed qualitative analysis, a performance analysis and critical discussion of the aforementioned aspects while providing the query set, the generated answers and codes as supplied data with the goal to give added value to electronics researchers and developers if trying to reach out for the tools in their profession.
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Affiliation(s)
- Zoltán Tafferner
- Department of Electronics Technology, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - Illés Balázs
- Department of Electronics Technology, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
- LTCC Technology Research Group, Łukasiewicz Research Network-Institute of Microelectronics and Photonics, 02-255 Kraków, Poland
| | - Olivér Krammer
- Department of Electronics Technology, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - Attila Géczy
- Department of Electronics Technology, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
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19
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Costanzo A, Augello E, Battistini G, Benassi F, Masotti D, Paolini G. Microwave Devices for Wearable Sensors and IoT. Sensors (Basel) 2023; 23:s23094356. [PMID: 37177569 PMCID: PMC10181738 DOI: 10.3390/s23094356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 04/21/2023] [Accepted: 04/24/2023] [Indexed: 05/15/2023]
Abstract
The Internet of Things (IoT) paradigm is currently highly demanded in multiple scenarios and in particular plays an important role in solving medical-related challenges. RF and microwave technologies, coupled with wireless energy transfer, are interesting candidates because of their inherent contactless spectrometric capabilities and for the wireless transmission of sensing data. This article reviews some recent achievements in the field of wearable sensors, highlighting the benefits that these solutions introduce in operative contexts, such as indoor localization and microwave sensing. Wireless power transfer is an essential requirement to be fulfilled to allow these sensors to be not only wearable but also compact and lightweight while avoiding bulky batteries. Flexible materials and 3D printing polymers, as well as daily garments, are widely exploited within the presented solutions, allowing comfort and wearability without renouncing the robustness and reliability of the built-in wearable sensor.
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Affiliation(s)
- Alessandra Costanzo
- Department of Electrical, Electronic, and Information Engineering (DEI) "G. Marconi", Alma Mater Studiorum-University of Bologna, 40136 Bologna, Italy
| | - Elisa Augello
- Department of Electrical, Electronic, and Information Engineering (DEI) "G. Marconi", Alma Mater Studiorum-University of Bologna, 40136 Bologna, Italy
| | - Giulia Battistini
- Department of Electrical, Electronic, and Information Engineering (DEI) "G. Marconi", Alma Mater Studiorum-University of Bologna, 40136 Bologna, Italy
| | - Francesca Benassi
- Department of Electrical, Electronic, and Information Engineering (DEI) "G. Marconi", Alma Mater Studiorum-University of Bologna, 40136 Bologna, Italy
| | - Diego Masotti
- Department of Electrical, Electronic, and Information Engineering (DEI) "G. Marconi", Alma Mater Studiorum-University of Bologna, 40136 Bologna, Italy
| | - Giacomo Paolini
- Department of Electrical, Electronic, and Information Engineering (DEI) "G. Marconi", Alma Mater Studiorum-University of Bologna, 40136 Bologna, Italy
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20
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Tan MC, Rattanawong P, Karikalan S, Deshmukh AJ, Srivathsan K, Scott L, McLeod CJ, Asirvatham SJ, Noseworthy PA, Mulpuru SK, Cha YM, Munger TM, Lee JZ. Causes of Early Mortality After Catheter Ablation of Atrial Fibrillation. Circ Arrhythm Electrophysiol 2023; 16:e011365. [PMID: 37082954 DOI: 10.1161/circep.122.011365] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 04/22/2023]
Abstract
BACKGROUND Recognition of the causes of early mortality after atrial fibrillation (AF) catheter ablation is essential for the improvement of patient safety. This study sought to determine the causes of early mortality (≤90 days) after AF ablation. METHODS We performed a retrospective analysis of AF ablation from January 1, 2013, to December 1, 2021 at the Mayo Clinic (Rochester, Phoenix, and Jacksonville). Causes of death were identified through a comprehensive chart review of the electronic health record from within the Mayo Clinic system and outside records when available. RESULTS A total of 6723 patients were included in the study. The 90-day all-cause mortality rate was 0.22% (n=15). Among all 90-day deaths, majority of the deaths (73.3%) did not have a direct relationship with the procedure. Sudden death was the most common cause of early death (20%), followed by peri-procedural stroke (13%), respiratory failure (13%), atrioesophageal fistula (13%), infection (7%), heart failure (7%), and traumatic brain injury (7%). The 90-day mortality rate directly due to AF ablation procedural complications was 0.06% (n=4). CONCLUSIONS AF ablation procedure has a 90-day mortality of 0.22%, and the most common cause of early mortality was sudden death. The majority (73.3%) of early mortality was not directly associated with a procedural complication, and the mortality rate due to complications associated with the AF ablation procedure was low at 0.06%. Further studies are required to investigate causes and risk factors associated with sudden death in this patient population.
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Affiliation(s)
- Min Choon Tan
- Department of Cardiovascular Medicine, Mayo Clinic, Phoenix, AZ (M.C.T., P.R., S.K., K.S., L.S., T.M.M., J.Z.L.)
| | - Pattara Rattanawong
- Department of Cardiovascular Medicine, Mayo Clinic, Phoenix, AZ (M.C.T., P.R., S.K., K.S., L.S., T.M.M., J.Z.L.)
| | - Suganya Karikalan
- Department of Cardiovascular Medicine, Mayo Clinic, Phoenix, AZ (M.C.T., P.R., S.K., K.S., L.S., T.M.M., J.Z.L.)
| | - Abhishek J Deshmukh
- Department of Cardiovascular Medicine, Mayo Clinic, Rochester, MN (A.J.D., S.J.A., P.A.N., S.K.M., Y.-M.C.)
| | - Komandoor Srivathsan
- Department of Cardiovascular Medicine, Mayo Clinic, Phoenix, AZ (M.C.T., P.R., S.K., K.S., L.S., T.M.M., J.Z.L.)
| | - Luis Scott
- Department of Cardiovascular Medicine, Mayo Clinic, Phoenix, AZ (M.C.T., P.R., S.K., K.S., L.S., T.M.M., J.Z.L.)
| | | | - Samuel J Asirvatham
- Department of Cardiovascular Medicine, Mayo Clinic, Rochester, MN (A.J.D., S.J.A., P.A.N., S.K.M., Y.-M.C.)
| | - Peter A Noseworthy
- Department of Cardiovascular Medicine, Mayo Clinic, Rochester, MN (A.J.D., S.J.A., P.A.N., S.K.M., Y.-M.C.)
| | - Siva K Mulpuru
- Department of Cardiovascular Medicine, Mayo Clinic, Rochester, MN (A.J.D., S.J.A., P.A.N., S.K.M., Y.-M.C.)
| | - Yong-Mei Cha
- Department of Cardiovascular Medicine, Mayo Clinic, Rochester, MN (A.J.D., S.J.A., P.A.N., S.K.M., Y.-M.C.)
| | - Thomas M Munger
- Department of Cardiovascular Medicine, Mayo Clinic, Phoenix, AZ (M.C.T., P.R., S.K., K.S., L.S., T.M.M., J.Z.L.)
| | - Justin Z Lee
- Department of Cardiovascular Medicine, Mayo Clinic, Phoenix, AZ (M.C.T., P.R., S.K., K.S., L.S., T.M.M., J.Z.L.)
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21
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Gobeil K, Lampert R, Bader EM. It's Not a Wash: Can the Pouch Be Beat? Circ Arrhythm Electrophysiol 2023; 16:e011952. [PMID: 37078340 DOI: 10.1161/circep.123.011952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 04/21/2023]
Affiliation(s)
- Kyle Gobeil
- Yale University School of Medicine, New Haven, CT
| | | | - Eric M Bader
- Yale University School of Medicine, New Haven, CT
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22
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Patil SA, Jagdale PB, Singh A, Singh RV, Khan Z, Samal AK, Saxena M. 2D Zinc Oxide - Synthesis, Methodologies, Reaction Mechanism, and Applications. Small 2023; 19:e2206063. [PMID: 36624578 DOI: 10.1002/smll.202206063] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Revised: 12/18/2022] [Indexed: 06/17/2023]
Abstract
Zinc oxide (ZnO) is a thermally stable n-type semiconducting material. ZnO 2D nanosheets have mainly gained substantial attention due to their unique properties, such as direct bandgap and strong excitonic binding energy at room temperature. These are widely utilized in piezotronics, energy storage, photodetectors, light-emitting diodes, solar cells, gas sensors, and photocatalysis. Notably, the chemical properties and performances of ZnO nanosheets largely depend on the nano-structuring that can be regulated and controlled through modulating synthetic strategies. Two synthetic approaches, top-down and bottom-up, are mainly employed for preparing ZnO 2D nanomaterials. However, owing to better results in producing defect-free nanostructures, homogenous chemical composition, etc., the bottom-up approach is extensively used compared to the top-down method for preparing ZnO 2D nanosheets. This review presents a comprehensive study on designing and developing 2D ZnO nanomaterials, followed by accenting its potential applications. To begin with, various synthetic strategies and attributes of ZnO 2D nanosheets are discussed, followed by focusing on methodologies and reaction mechanisms. Then, their deliberation toward batteries, supercapacitors, electronics/optoelectronics, photocatalysis, sensing, and piezoelectronic platforms are further discussed. Finally, the challenges and future opportunities are featured based on its current development.
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Affiliation(s)
- Sayali Ashok Patil
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
| | - Pallavi Bhaktapralhad Jagdale
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
| | - Ashish Singh
- R&D, Technology and Innovation, Merck- Living Innovation, Sigma Aldrich Chemicals Pvt. Ltd., #12, Bommasandra- Jigni Link Road, Bengaluru, Karnataka, 560100, India
| | - Ravindra Vikram Singh
- R&D, Technology and Innovation, Merck- Living Innovation, Sigma Aldrich Chemicals Pvt. Ltd., #12, Bommasandra- Jigni Link Road, Bengaluru, Karnataka, 560100, India
| | - Ziyauddin Khan
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, SE-60174, Sweden
| | - Akshaya Kumar Samal
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
| | - Manav Saxena
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
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23
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Veske P, Bossuyt F, Thielemans F, Vanfleteren J. Measuring the Flex Life of Conductive Yarns in Narrow Fabric. Micromachines (Basel) 2023; 14:781. [PMID: 37421014 DOI: 10.3390/mi14040781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 03/24/2023] [Accepted: 03/29/2023] [Indexed: 07/09/2023]
Abstract
Due to constant advancements in materials research, conductive textile-based materials have been used increasingly in textile-based wearables. However, due to the rigidity of electronics or the need for their encapsulation, conductive textile materials, such as conductive yarns, tend to break faster around transition areas than other parts of e-textile systems. Thus, the current work aims to find the limits of two conductive yarns woven into a narrow fabric at the electronics encapsulation transition point. The tests consisted of repeated bending and mechanical stress, and were conducted using a testing machine built from off-the-shelf components. The electronics were encapsulated with an injection-moulded potting compound. In addition to identifying the most reliable conductive yarn and soft-rigid transition materials, the results examined the failure process during the bending tests, including continuous electrical measurements.
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Affiliation(s)
- Paula Veske
- Centre for Microsystems Technology (CMST), Interuniversity Microelectronics Centre (IMEC), Ghent University, 9000 Ghent, Belgium
| | - Frederick Bossuyt
- Centre for Microsystems Technology (CMST), Interuniversity Microelectronics Centre (IMEC), Ghent University, 9000 Ghent, Belgium
| | - Filip Thielemans
- Centre for Microsystems Technology (CMST), Interuniversity Microelectronics Centre (IMEC), Ghent University, 9000 Ghent, Belgium
| | - Jan Vanfleteren
- Centre for Microsystems Technology (CMST), Interuniversity Microelectronics Centre (IMEC), Ghent University, 9000 Ghent, Belgium
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24
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Chak EW, Luna R, MacDonald S, Stewart SL, Chen MS, Bowlus C. Automated electronic health registry-based hepatitis B screening. J Viral Hepat 2023; 30:228-231. [PMID: 36514989 PMCID: PMC10803191 DOI: 10.1111/jvh.13784] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 12/04/2022] [Accepted: 12/07/2022] [Indexed: 12/15/2022]
Affiliation(s)
- Eric W. Chak
- Division of Gastroenterology and Hepatology, UC Davis School of Medicine, Sacramento, California, USA
| | - Randy Luna
- Division of Clinical Informatics, UC Davis Medical Center, Sacramento, California, USA
| | - Scott MacDonald
- Division of Clinical Informatics, UC Davis Medical Center, Sacramento, California, USA
| | - Susan L. Stewart
- Division of Biostatistics, UC Davis Department of Public Health Sciences, Sacramento, California, USA
| | - Moon S. Chen
- Division of Hematology and Oncology, UC Davis School of Medicine, Sacramento, California, USA
| | - Christopher Bowlus
- Division of Gastroenterology and Hepatology, UC Davis School of Medicine, Sacramento, California, USA
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25
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de Souza TC, Amorim JDP, Silva Junior CJGD, de Medeiros ADM, Santana Costa AF, Vinhas GM, Sarubbo LA. Magnetic Bacterial Cellulose Biopolymers: Production and Potential Applications in the Electronics Sector. Polymers (Basel) 2023; 15. [PMID: 36850137 DOI: 10.3390/polym15040853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 01/29/2023] [Accepted: 02/06/2023] [Indexed: 02/11/2023] Open
Abstract
Bacterial cellulose (BC) is a biopolymer that has been widely investigated due to its useful characteristics, such as nanometric structure, simple production and biocompatibility, enabling the creation of novel materials made from additive BC in situ and/or ex situ. The literature also describes the magnetization of BC biopolymers by the addition of particles such as magnetite and ferrites. The processing of BC with these materials can be performed in different ways to adapt to the availability of materials and the objectives of a given application. There is considerable interest in the electronics field for novel materials and devices as well as non-polluting, sustainable solutions. This sector influences the development of others, including the production and optimization of new equipment, medical devices, sensors, transformers and motors. Thus, magnetic BC has considerable potential in applied research, such as the production of materials for biotechnological electronic devices. Magnetic BC also enables a reduction in the use of polluting materials commonly found in electronic devices. This review article highlights the production of this biomaterial and its applications in the field of electronics.
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26
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Yu M, Hu Z, Zhou J, Lu Y, Guo W, Zhang Z. Retrieving Grain Boundaries in 2D Materials. Small 2023; 19:e2205593. [PMID: 36461686 DOI: 10.1002/smll.202205593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Revised: 11/13/2022] [Indexed: 06/17/2023]
Abstract
The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.
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Affiliation(s)
- Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhili Hu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
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27
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Moon S, Kim J, Park J, Im S, Kim J, Hwang I, Kim JK. Hexagonal Boron Nitride for Next-Generation Photonics and Electronics. Adv Mater 2023; 35:e2204161. [PMID: 35735090 DOI: 10.1002/adma.202204161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
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Affiliation(s)
- Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jeonghyeon Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Semi Im
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jawon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Inyong Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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28
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Chu T, Rong C, Zhou L, Mao X, Zhang B, Xuan F. Progress and Perspectives of Single-Atom Catalysts for Gas Sensing. Adv Mater 2023; 35:e2206783. [PMID: 36106690 DOI: 10.1002/adma.202206783] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Revised: 09/02/2022] [Indexed: 06/15/2023]
Abstract
Single-atom catalysts (SACs) attract extensive attention in the field of heterogeneous catalysis in recent years due to the maximum atom utilization and unique physical and chemical properties. The gas sensing is actually a heterogeneous catalysis process but the SACs are new to this area. Although SACs show huge potential in gas sensing, the SACs gas sensing area currently is still at the infancy stage. This work critically reviews the recent advances and current status of single-atom gas sensing materials. General synthesis routes, characterization methods, and sensing performance indexes are introduced. At the end, the challenges and future prospects on SACs gas sensing are presented from the authors' perspectives. This work is anticipated to provide insights and guideline for the chemical sensing community.
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Affiliation(s)
- Tianshu Chu
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Chao Rong
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Lei Zhou
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Xinyuan Mao
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Bowei Zhang
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Fuzhen Xuan
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
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29
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Liu S, Wang J, Shao J, Ouyang D, Zhang W, Liu S, Li Y, Zhai T. Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices. Adv Mater 2022; 34:e2200734. [PMID: 35501143 DOI: 10.1002/adma.202200734] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit-level, it is necessary to develop advanced nanopatterning methods to obtain high-quality, wafer-scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large-scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.
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Affiliation(s)
- Shenghong Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jing Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jiefan Shao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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30
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Wang Q, Li W, Wang K, Liao Y, Zheng J, Zhou X, Lin J, Zhang Y, Wu C. Omnidirectional Triboelectric Nanogenerator for Wide-Speed-Range Wind Energy Harvesting. Nanomaterials (Basel) 2022; 12:4046. [PMID: 36432334 PMCID: PMC9698673 DOI: 10.3390/nano12224046] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Revised: 11/08/2022] [Accepted: 11/10/2022] [Indexed: 06/16/2023]
Abstract
The environmentally friendly harvesting of wind energy is an effective technique for achieving carbon neutrality and a green economy. In this work, a core-shell triboelectric nanogenerator (CS-TENG) for harvesting wind energy is demonstrated and the device structure parameters are optimized. The core-shell structure enables the CS-TENG to respond sensitively to wind from any direction and generate electrical output on the basis of the vertical contact-separation mode. A single device can generate a maximum power density of 0.14 W/m3 and can power 124 light-emitting diodes. In addition, wind energy can be harvested even at a wind speed as low as 2.3 m/s by paralleling CS-TENGs of different sizes. Finally, a self-powered water quality testing system that uses the CS-TENG as its power supply is built. The CS-TENG exhibits the advantages of a simple structure, environmentally friendly materials, low cost, and simple fabrication process. These features are of considerable significance for the development of green energy harvesting devices.
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Affiliation(s)
- Qiman Wang
- College of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, China
| | - Wenhao Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Kun Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Yitao Liao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Junjie Zheng
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Xiongtu Zhou
- College of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, China
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Jianpu Lin
- College of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, China
| | - Yongai Zhang
- College of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, China
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Chaoxing Wu
- College of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, China
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
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31
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Zhang X, Zhang Y, Yu H, Zhao H, Cao Z, Zhang Z, Zhang Y. Van der Waals-Interface-Dominated All-2D Electronics. Adv Mater 2022:e2207966. [PMID: 36353883 DOI: 10.1002/adma.202207966] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 11/06/2022] [Indexed: 06/16/2023]
Abstract
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yanzhe Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Hang Zhao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhihong Cao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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32
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Annese VF, Hu C. Integrating Microfluidics and Electronics in Point-of-Care Diagnostics: Current and Future Challenges. Micromachines (Basel) 2022; 13:1923. [PMID: 36363944 PMCID: PMC9699090 DOI: 10.3390/mi13111923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 11/01/2022] [Accepted: 11/03/2022] [Indexed: 06/16/2023]
Abstract
Point-of-Care (POC) diagnostics have gained increasing attention in recent years due to its numerous advantages over conventional diagnostic approaches. As proven during the recent COVID-19 pandemic, the rapidity and portability of POC testing improves the efficiency of healthcare services and reduces the burden on healthcare providers. There are hundreds of thousands of different applications for POC diagnostics, however, the ultimate requirement for the test is the same: sample-in and result-out. Many technologies have been implemented, such as microfluidics, semiconductors, and nanostructure, to achieve this end. The development of even more powerful POC systems was also enabled by merging multiple technologies into the same system. One successful example is the integration of microfluidics and electronics in POC diagnostics, which has simplified the sample handling process, reduced sample usage, and reduced the cost of the test. This review will analyze the current development of the POC diagnostic systems with the integration of microfluidics and electronics and discuss the future challenges and perspectives that researchers might have.
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Affiliation(s)
- Valerio Francesco Annese
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, 20133 Milan, Italy
- James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
| | - Chunxiao Hu
- James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
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Batool S, Idrees M, Han S, Zhou Y. 2D Layers of Group VA Semiconductors: Fundamental Properties and Potential Applications. Adv Sci (Weinh) 2022; 10:e2203956. [PMID: 36285813 PMCID: PMC9811453 DOI: 10.1002/advs.202203956] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/09/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Members of the 2D group VA semiconductors (phosphorene, arsenene, antimonene, and bismuthine) present a new class of 2D materials, which are recently gaining a lot of research interest. These materials possess layered morphology, tunable direct bandgap, high charge carrier mobility, high stability, unique in-plane anisotropy, and negative Poisson's ratio. They prepare the ground for novel and multifunctional applications in electronics, optoelectronics, and batteries. The most recent analytical and empirical developments in the fundamental characteristics, fabrication techniques, and potential implementation of 2D group VA materials in this review, along with presenting insights and concerns for the field's future are analyzed.
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Affiliation(s)
- Saima Batool
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Muhammad Idrees
- Additive Manufacturing InstituteCollege of Mechatronics and Control EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Su‐Ting Han
- College of Electronics Science & TechnologyShenzhen UniversityShenzhen518060P. R. China
| | - Ye Zhou
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. Adv Mater 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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Qin D, Filippaios A, Murphy J, Berg M, Lampert R, Schloss EJ, Noone M, Mela T. Short- and Long-Term Risk of Lead Dislodgement Events: Real-World Experience From Product Surveillance Registry. Circ Arrhythm Electrophysiol 2022; 15:e011029. [PMID: 35925831 DOI: 10.1161/circep.122.011029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
BACKGROUND Lead dislodgement (LD) has been one of the most common early complications after cardiovascular implantable electronic device implant. However, limited data are available on the clinical characteristics and long-term outcomes of LD events. The aim of this study was to examine the risk factors, clinical significance, and management strategies of LD events after cardiovascular implantable electronic device implant. METHODS This study was a retrospective cohort analysis of 20 683 patients who underwent cardiovascular implantable electronic device implant between January 1, 2010 and January 31, 2020 in Medtronic's Product Surveillance Registry, with a mean follow-up time of 3.3±2.5 SD years. The study population was divided into 2 groups: group A with LD events (N=350) and group B without LD events (N=20 333). RESULTS During this period, 350 patients (1.69%) had LD events involving 371 leads (0.95%), among a total of 39 060 leads implanted. Passive fixation type (right atrium pacing lead, P=0.041), lower sensing amplitude (right ventricle defibrillating lead, P=0.020), and lower lead impedance at implant (right atrium pacing lead, P=0.009) were associated with increased LD risk. Multivariate analysis showed female sex (hazard ratio, 1.520, P=0.008) and higher body mass index (hazard ratio, 1.012, P=0.001) were independently associated with increased risk of LD events. LD events were not associated with significant changes in the long-term risks of cardiac and overall mortality. In group A, repositioning the dislodged leads increased the risk of a second LD event compared with implanting new leads (P=0.012). CONCLUSIONS Female sex and higher body mass index were associated with higher risk of LD events in the Product Surveillance Registry. Among patients with dislodged leads, implanting new leads was associated with lower risk of future LD events. Further studies on how to reduce LD risk and to improve management of these events are needed. REGISTRATION URL: https://www. CLINICALTRIALS gov; Unique identifier: NCT01524276.
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Affiliation(s)
- Dingxin Qin
- New England Heart and Vascular Institute, Catholic Medical Center, Manchester, NH (D.Q.)
| | | | | | | | | | | | | | - Theofanie Mela
- Cardiac Arrhythmia Service, Massachusetts General Hospital, Boston, MA (T.M.)
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Wang H, Peng Y, Peng H, Zhang J. Fluidic phase-change materials with continuous latent heat from theoretically tunable ternary metals for efficient thermal management. Proc Natl Acad Sci U S A 2022; 119:e2200223119. [PMID: 35901205 DOI: 10.1073/pnas.2200223119] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023] Open
Abstract
Phase-change materials (PCMs), as important energy storage materials (ESMs), have been widely used in heat dissipation for electronics. However, PCMs are encountering huge challenges since the extremely limited space in microelectronics largely suppresses the applied volume of PCMs, which demands excellent PCMs that can fully utilize the valuable latent heat. This work successfully found a universal strategy toward powerful ESMs from fluidic ternary metals (TMs, GaInSn as a representative TM in this work). TMs exhibit high thermal conductivity (20.3 W m-1 K-1) and significantly effective latent heat (115 J/cm3) and, more important, show continuous phase transition and full utilization of the valuable latent heat. Interestingly, theoretical prediction through ternary phase diagram is carried out to easily tune the melting range, latent heat, and fluidity (viscosity) of TMs to adapt with different service conditions. As a result, thermally conductive silicone grease can be conveniently fabricated via simple shear mixing of TM and polymers. Such thermally conductive TM grease inherits the merits of TM, exhibiting continuous thermal control over daily electronics according to thermal shock performance.
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Martín-Moldes Z, Spey Q, Bhatacharya T, Kaplan DL. Silk-Elastin-Like-Protein/Graphene-Oxide Composites for Dynamic Electronic Biomaterials. Macromol Biosci 2022; 22:e2200122. [PMID: 35634798 PMCID: PMC9391278 DOI: 10.1002/mabi.202200122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2022] [Revised: 05/11/2022] [Indexed: 08/03/2023]
Abstract
Genetically engineered silk-elastin-like-proteins (SELPs) synthesized with the combination of silk and elastin domains are bioengineered to also contain a graphene oxide (GO) binding domain. The conductivity and mechanical stability of graphene, combined with SELP-specific graphene interfaces are pursued as dynamic hybrid materials, toward biomaterial-based electronic switches. The resulting bioengineered proteins with added GO demonstrate cytocompatibility and conductivity that could be modulated by changing hydrogel size in response to temperature due to the SELP chemistry. Upon increased temperature, the gels coalesce and contract, providing sufficient condensed spacing to facilitate conductivity via the graphene domains, a feature that is lost at lower temperatures with the more expanded hydrogels. This thermally induced contraction-expansion is reversible and cyclable, providing an "on-off" conductive switch driven by temperature-driven hydrogel shape-change.
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Affiliation(s)
- Zaira Martín-Moldes
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, MA 02155, USA
| | - Quintin Spey
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, MA 02155, USA
- OrganaBio LLC, 7800 SW 57th Ave, South Miami, FL 33143, USA
| | - Tiara Bhatacharya
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, MA 02155, USA
- The Lakshmi Mittal and Family South Asia Institute, Harvard University, 1730 Cambridge Street, Cambridge, MA 02138, USA
| | - David L. Kaplan
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, MA 02155, USA
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Shen C, Yin Z, Collins F, Pinna N. Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors. Adv Sci (Weinh) 2022; 9:e2104599. [PMID: 35712776 PMCID: PMC9376853 DOI: 10.1002/advs.202104599] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Revised: 03/23/2022] [Indexed: 06/15/2023]
Abstract
Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.
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Affiliation(s)
- Chengxu Shen
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Zhigang Yin
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of Sciences155 Yangqiao West RoadFuzhouFujian350002China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108China
| | - Fionn Collins
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Nicola Pinna
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
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Walton F, Cerezo-Sanchez M, McGlynn E, Das R, Heidari H. Cleanroom strategies for micro- and nano-fabricating flexible implantable neural electronics. Philos Trans A Math Phys Eng Sci 2022; 380:20210009. [PMID: 35658678 PMCID: PMC9168450 DOI: 10.1098/rsta.2021.0009] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2023]
Abstract
Implantable electronic neural interfaces typically take the form of probes and are made with rigid materials such as silicon and metals. These have advantages such as compatibility with integrated microchips, simple implantation and high-density nanofabrication but tend to be lacking in terms of biointegration, biocompatibility and durability due to their mechanical rigidity. This leads to damage to the device or, more importantly, the brain tissue surrounding the implant. Flexible polymer-based probes offer superior biocompatibility in terms of surface biochemistry and better matched mechanical properties. Research which aims to bring the fabrication of electronics on flexible polymer substrates to the nano-regime is remarkably sparse, despite the push for flexible consumer electronics in the last decade or so. Cleanroom-based nanofabrication techniques such as photolithography have been used as pattern transfer methods by the semiconductor industry to produce single nanometre scale devices and are now also used for making flexible circuit boards. There is still much scope for miniaturizing flexible electronics further using photolithography, bringing the possibility of nanoscale, non-invasive, high-density flexible neural interfacing. This work explores the fabrication challenges of using photolithography and complementary techniques in a cleanroom for producing flexible electronic neural probes with nanometre-scale features. This article is part of the theme issue 'Advanced neurotechnologies: translating innovation for health and well-being'.
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Affiliation(s)
- Finlay Walton
- Microelectronics Lab, James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Maria Cerezo-Sanchez
- Microelectronics Lab, James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Eve McGlynn
- Microelectronics Lab, James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Rupam Das
- Microelectronics Lab, James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Hadi Heidari
- Microelectronics Lab, James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
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Langdon R, Mandel A, Cameron M, Pierce E, McCracken E, Strelzik J, McClintock W, Bost J, DiSabella M. Pediatric screen exposure and school related headache disability. Cephalalgia 2022; 42:1349-1358. [PMID: 35850550 DOI: 10.1177/03331024221113468] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
BACKGROUND AND OBJECTIVES Prolonged screen exposure is often cited as a trigger for pediatric headache. We present initial findings evaluating the association between adolescent screen use type, duration, and school disability. METHODS New patients aged 12-17 years presenting to a headache clinic were screened and surveyed regarding headache characteristics, behavioral habits, school attendance, and screen utilization. RESULTS 99 adolescents (29 M, 70 F) with average age 14.8 years and average headache frequency of 17 days per month completed the survey. Patients missed an average of five full days and three partial days of school due to headaches over the 90 days prior to survey completion.No statistically significant correlation was found between type or duration of screen exposure and monthly headache frequency, school attendance, or school functioning. A small positive association was seen between increasing duration of computer use, total hours screen use, and school absenteeism. While most adolescents reported prolonged screen use (58.6%) and luminosity (64.6%) worsened headaches, no statistical difference was seen in average number of headache days per month. CONCLUSIONS Average monthly headache frequency in an adolescent population was not significantly correlated with type or duration of screen exposure. Further studies are needed to elucidate how screen utilization impacts school related headache disability.
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Affiliation(s)
- Raquel Langdon
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - Alexandra Mandel
- The George Washington University School of Medicine and Health Sciences, Washington, DC, USA
| | - Mark Cameron
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - Emily Pierce
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - Emily McCracken
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - Jeffrey Strelzik
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - William McClintock
- Department of Neurology, Children's National Hospital, Washington, DC, USA
| | - James Bost
- Center for Translational Research, Children's National Hospital, Washington, DC, USA
| | - Marc DiSabella
- Department of Neurology, Children's National Hospital, Washington, DC, USA
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Kang T, Tang TW, Pan B, Liu H, Zhang K, Luo Z. Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics. ACS Mater Au 2022; 2:665-685. [PMID: 36855548 PMCID: PMC9928416 DOI: 10.1021/acsmaterialsau.2c00029] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.
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Affiliation(s)
- Ting Kang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Tsz Wing Tang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Baojun Pan
- Macao
Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa, Macau 999078, P.R. China
| | - Hongwei Liu
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Kenan Zhang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Zhengtang Luo
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China,
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Dadras-Toussi O, Khorrami M, Louis Sam Titus ASC, Majd S, Mohan C, Abidian MR. Multiphoton Lithography of Organic Semiconductor Devices for 3D Printing of Flexible Electronic Circuits, Biosensors, and Bio electronics. Adv Mater 2022; 34:e2200512. [PMID: 35707927 PMCID: PMC9339506 DOI: 10.1002/adma.202200512] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Revised: 05/04/2022] [Indexed: 05/20/2023]
Abstract
In recent years, 3D printing of electronics have received growing attention due to their potential applications in emerging fields such as nanoelectronics and nanophotonics. Multiphoton lithography (MPL) is considered the state-of-the-art amongst the microfabrication techniques with true 3D fabrication capability owing to its excellent level of spatial and temporal control. Here, a homogenous and transparent photosensitive resin doped with an organic semiconductor material (OS), which is compatible with MPL process, is introduced to fabricate a variety of 3D OS composite microstructures (OSCMs) and microelectronic devices. Inclusion of 0.5 wt% OS in the resin enhances the electrical conductivity of the composite polymer about 10 orders of magnitude and compared to other MPL-based methods, the resultant OSCMs offer high specific electrical conductivity. As a model protein, laminin is incorporated into these OSCMs without a significant loss of activity. The OSCMs are biocompatible and support cell adhesion and growth. Glucose-oxidase-encapsulated OSCMs offer a highly sensitive glucose sensing platform with nearly tenfold higher sensitivity compared to previous glucose biosensors. In addition, this biosensor exhibits excellent specificity and high reproducibility. Overall, these results demonstrate the great potential of these novel MPL-fabricated OSCM devices for a wide range of applications from flexible bioelectronics/biosensors, to nanoelectronics and organ-on-a-chip devices.
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Affiliation(s)
- Omid Dadras-Toussi
- Department of Biomedical Engineering, University of Houston, 3517 Cullen Blvd, Houston, TX, 77204, USA
| | - Milad Khorrami
- Department of Biomedical Engineering, University of Houston, 3517 Cullen Blvd, Houston, TX, 77204, USA
| | | | - Sheereen Majd
- Department of Biomedical Engineering, University of Houston, 3517 Cullen Blvd, Houston, TX, 77204, USA
| | - Chandra Mohan
- Department of Biomedical Engineering, University of Houston, 3517 Cullen Blvd, Houston, TX, 77204, USA
| | - Mohammad Reza Abidian
- Department of Biomedical Engineering, University of Houston, 3517 Cullen Blvd, Houston, TX, 77204, USA
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Mo J, Vickerstaff V, Minton O, Tavabie S, Taubert M, Stone P, White N. How effective is virtual reality technology in palliative care? A systematic review and meta-analysis. Palliat Med 2022; 36:1047-1058. [PMID: 35635018 PMCID: PMC9248003 DOI: 10.1177/02692163221099584] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
BACKGROUND The efficacy of virtual reality for people living with a terminal illness is unclear. AIM To determine the feasibility and effectiveness of virtual reality use within a palliative care setting. DESIGN Systematic review and meta-analysis. PROSPERO (CRD42021240395). DATA SOURCES Medline, Embase, AMED, PsycINFO, CINAHL, Cochrane Central Register of Controlled Trials and Web of Science were searched from inception to March 2021. Search terms included 'virtual reality' and 'palliative care'. Eligibility: (1) adult (>18 years old) with a terminal illness (2) at least one virtual reality session and (3) feasibility data and/or at least one patient outcome reported. The ROB-2 and ROBINS tools assessed risk of bias. The Grading of Recommendations, Assessment, Development and Evaluations (GRADE) tool assessed the quality of the evidence. Standardised mean differences (Hedges's g) were calculated from the pre- and post-data. A DerSimonian-Laird random effects model meta-analysis was conducted. RESULTS Eight studies were included, of which five were in the meta-analysis. All studies had at least some concern for risk of bias. Virtual reality statistically significantly improved pain (p = 0.0363), tiredness (p = 0.0030), drowsiness (p = 0.0051), shortness of breath (p = 0.0284), depression (p = 0.0091) and psychological well-being (p = 0.0201). The quality of the evidence was graded as very low due to small sample sizes, non-randomisation methods and a lack of a comparator arm. CONCLUSIONS Virtual reality in palliative care is feasible and acceptable. However, limited sample sizes and very low-quality studies mean that the efficacy of virtual reality needs further research.
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Affiliation(s)
- Jiping Mo
- UCL Division of Psychiatry, London, UK
| | - Victoria Vickerstaff
- Marie Curie Palliative Care Research Department, UCL Division of Psychiatry, London, UK.,Priment Clinical Trials Unit, Research Department of Primary Care and Population Health, University College London (UCL), London, UK
| | - Ollie Minton
- Sussex Cancer Centre University Hospitals, Sussex, UK
| | | | - Mark Taubert
- Palliative Medicine, Velindre Cancer Centre, Cardiff, UK.,Palliative Care, Cardiff University School of Medicine, Cardiff, UK
| | - Patrick Stone
- Marie Curie Palliative Care Research Department, UCL Division of Psychiatry, London, UK
| | - Nicola White
- Marie Curie Palliative Care Research Department, UCL Division of Psychiatry, London, UK
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44
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Bornemann S, Lang W. Considerations and Limits of Embedding Sensor Nodes for Structural Health Monitoring into Fiber Metal Laminates. Sensors (Basel) 2022; 22:4511. [PMID: 35746291 PMCID: PMC9227643 DOI: 10.3390/s22124511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/25/2022] [Revised: 06/11/2022] [Accepted: 06/13/2022] [Indexed: 06/15/2023]
Abstract
The objective of this article is to present the results of our investigations concerning the environmental conditions that can be expected during the embedding process into fibre metal laminates and the consequences for a sensor node for structural health monitoring. The idea behind this investigation is to determine for which manufacturing conditions the integration of sensor nodes into the material can be done and to identify limits for this. The sensor nodes consist of commercially available integrated circuits and passive components soldered onto an adhesive-less flexible printed circuit board. They are tested under conditions above their specified limits, to find out if they are still working reliably after experiencing 155 min of 180 ∘C and 7 bar of pressure. Apart from occurring temperature damage, the effect of surrounding fibres potentially pushing away the components under the amount of pressure of the manufacturing process, as well as the potential of shorts due to conductive fibers are investigated and suitable solutions to prevent this are evaluated. One experiment exceeding the typical requirements of a fiber metal laminate embedding process for structural components will be conducted at 250 ∘C for 10 h, in order to determine the limits of embedding electronic sensor nodes. This time and temperature combination is expected to cause irreversible damage to the electronic system. Results show that it is possible to integrate electronics into materials under conditions far above their specifications when precautions are taken but also that there are limits that must not be exceeded during the embedding process.
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Abstract
Following the significant discovery of van der Waals (vdW) layered materials with diverse electronic properties over more than a decade ago, the scalable production of high-quality vdW layered materials has become a critical goal to enable the transformation of fundamental studies into practical applications in electronics. To this end, solution-based processing has been proposed as a promising technique to yield vdW layered materials in large quantities. Moreover, the resulting dispersions are compatible with cost-effective device fabrication processes such as inkjet printing and roll-to-roll manufacturing. Despite these advantages, earlier works on solution-based processing methods (i.e., direct liquid-phase exfoliation or alkali-metal intercalation) have several challenges in achieving high-performance electronic devices, such as structural polydispersity in thickness and lateral size or undesired phase transformation. These challenges hinder the utilization of the solution-processed materials in the limited fields of electronics such as electrodes and conductors. In the meantime, the groundbreaking discovery of another solution-based approach, molecular intercalation-based electrochemical exfoliation, has shown significant potential for the use of vdW layered materials in scalable electronics owing to the nearly ideal structure of the exfoliated samples. The resulting materials are highly monodispersed, atomically thin, and reasonably large, enabling the preparation of electronically active thin-film networks via successful vdW interface formation. The formation of vdW interfaces is highly important for efficient plane-to-plane charge transport and mechanical stability under various deformations, which are essential to high-performance, flexible electronics. In this Perspective, we survey the latest developments in solution-based processing of vdW layered materials and their electronic applications while also describing the field's future outlook in the context of its current challenges.
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Affiliation(s)
- Jihyun Kim
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic
of Korea
| | - Okin Song
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic
of Korea
| | - Yun Seong Cho
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic
of Korea
| | - Myeongjin Jung
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic
of Korea
| | - Dongjoon Rhee
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic
of Korea
| | - Joohoon Kang
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic
of Korea,KIST-SKKU
Carbon-Neutral Research Center, Sungkyunkwan
University (SKKU), Suwon 16419, Republic of Korea,
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46
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Wei X, Li S, Wang W, Zhang X, Zhou W, Xie S, Liu H. Recent Advances in Structure Separation of Single-Wall Carbon Nanotubes and Their Application in Optics, Electronics, and Optoelectronics. Adv Sci (Weinh) 2022; 9:e2200054. [PMID: 35293698 PMCID: PMC9108629 DOI: 10.1002/advs.202200054] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Revised: 02/10/2022] [Indexed: 05/04/2023]
Abstract
Structural control of single-wall carbon nanotubes (SWCNTs) with uniform properties is critical not only for their property modulation and functional design but also for applications in electronics, optics, and optoelectronics. To achieve this goal, various separation techniques have been developed in the past 20 years through which separation of high-purity semiconducting/metallic SWCNTs, single-chirality species, and even their enantiomers have been achieved. This progress has promoted the property modulation of SWCNTs and the development of SWCNT-based optoelectronic devices. Here, the recent advances in the structure separation of SWCNTs are reviewed, from metallic/semiconducting SWCNTs, to single-chirality species, and to enantiomers by several typical separation techniques and the application of the corresponding sorted SWCNTs. Based on the separation procedure, efficiency, and scalability, as well as, the separable SWCNT species, purity, and quantity, the advantages and disadvantages of various separation techniques are compared. Combined with the requirements of SWCNT application, the challenges, prospects, and development direction of structure separation are further discussed.
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Affiliation(s)
- Xiaojun Wei
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Shilong Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
| | - Wenke Wang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
| | - Xiao Zhang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Weiya Zhou
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Sishen Xie
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Huaping Liu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
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Muldoon K, Song Y, Ahmad Z, Chen X, Chang MW. High Precision 3D Printing for Micro to Nano Scale Biomedical and Electronic Devices. Micromachines (Basel) 2022; 13:642. [PMID: 35457946 DOI: 10.3390/mi13040642] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 04/11/2022] [Accepted: 04/16/2022] [Indexed: 12/12/2022]
Abstract
Three dimensional printing (3DP), or additive manufacturing, is an exponentially growing process in the fabrication of various technologies with applications in sectors such as electronics, biomedical, pharmaceutical and tissue engineering. Micro and nano scale printing is encouraging the innovation of the aforementioned sectors, due to the ability to control design, material and chemical properties at a highly precise level, which is advantageous in creating a high surface area to volume ratio and altering the overall products’ mechanical and physical properties. In this review, micro/-nano printing technology, mainly related to lithography, inkjet and electrohydrodynamic (EHD) printing and their biomedical and electronic applications will be discussed. The current limitations to micro/-nano printing methods will be examined, covering the difficulty in achieving controlled structures at the miniscule micro and nano scale required for specific applications.
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48
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Hui L, Chen C, Kim MA, Liu H. Fabrication of DNA-Templated Pt Nanostructures by Area-Selective Atomic Layer Deposition. ACS Appl Mater Interfaces 2022; 14:16538-16545. [PMID: 35357800 DOI: 10.1021/acsami.2c02244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report the fabrication of DNA-templated Pt nanostructures by area-selective atomic layer deposition. A DNA-templated self-assembled monolayer was used to mediate the area-selective deposition of Pt. Using this approach, we demonstrated the fabrication of both single- and two-component nanostructure patterns, including Pt, TiO2/Pt, and Al2O3/Pt. These nanoscale patterns were used as hard masks for plasma deep etching of Si to fabricate anti-reflection surfaces. This work demonstrated a gas-phase, DNA-templated fabrication of metal nanostructures, which complements earlier work of solution-based DNA metallization. The nanostructures obtained here are useful for applications in nanoelectronics, nanophotonics, and surface engineering.
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Affiliation(s)
- Liwei Hui
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Chen Chen
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Min A Kim
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Haitao Liu
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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Kim J, Rhee D, Song O, Kim M, Kwon YH, Lim DU, Kim IS, Mazánek V, Valdman L, Sofer Z, Cho JH, Kang J. All-Solution-Processed Van der Waals Heterostructures for Wafer-Scale Electronics. Adv Mater 2022; 34:e2106110. [PMID: 34933395 DOI: 10.1002/adma.202106110] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2021] [Revised: 12/16/2021] [Indexed: 06/14/2023]
Abstract
2D van der Waals (vdW) materials have been considered as potential building blocks for use in fundamental elements of electronic and optoelectronic devices, such as electrodes, channels, and dielectrics, because of their diverse and remarkable electrical properties. Furthermore, two or more building blocks of different electronic types can be stacked vertically to generate vdW heterostructures with desired electrical behaviors. However, such fundamental approaches cannot directly be applied practically because of issues such as precise alignment/positioning and large-quantity material production. Here, these limitations are overcome and wafer-scale vdW heterostructures are demonstrated by exploiting the lateral and vertical assembly of solution-processed 2D vdW materials. The high exfoliation yield of the molecular intercalation-assisted approach enables the production of micrometer-sized nanosheets in large quantities and its lateral assembly in a wafer-scale via vdW interactions. Subsequently, the laterally assembled vdW thin-films are vertically assembled to demonstrate various electronic device applications, such as transistors and photodetectors. Furthermore, multidimensional vdW heterostructures are demonstrated by integrating 1D carbon nanotubes as a p-type semiconductor to fabricate p-n diodes and complementary logic gates. Finally, electronic devices are fabricated via inkjet printing as a lithography-free manner based on the stable nanomaterial dispersions.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Okin Song
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Miju Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Yong Hyun Kwon
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - In Soo Kim
- Nanophotonics Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Vlastimil Mazánek
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, Prague 6, 166 28, Czech Republic
| | - Lukas Valdman
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, Prague 6, 166 28, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, Prague 6, 166 28, Czech Republic
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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50
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Liu L, Gong P, Liu K, Nie A, Liu Z, Yang S, Xu Y, Liu T, Zhao Y, Huang L, Li H, Zhai T. Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals. Adv Mater 2022; 34:e2106041. [PMID: 34865248 DOI: 10.1002/adma.202106041] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Revised: 11/22/2021] [Indexed: 06/13/2023]
Abstract
Encapsulation is critical for devices to guarantee their stability and reliability. It becomes an even more essential requirement for devices based on 2D materials with atomic thinness and far inferior stability compared to their bulk counterparts. Here a general van der Waals (vdW) encapsulation method for 2D materials using Sb2 O3 layer of inorganic molecular crystal fabricated via thermal evaporation deposition is reported. It is demonstrated that such a scalable encapsulation method not only maintains the intrinsic properties of typical air-susceptible 2D materials due to their vdW interactions but also remarkably improves their environmental stability. Specifically, the encapsulated black phosphorus (BP) exhibits greatly enhanced structural stability of over 80 days and more sustaining-electrical properties of 19 days, while the bare BP undergoes degradation within hours. Moreover, the encapsulation layer can be facilely removed by sublimation in vacuum without damaging the underlying materials. This scalable encapsulation method shows a promising pathway to effectively enhance the environmental stability of 2D materials, which may further boost their practical application in novel (opto)electronic devices.
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Affiliation(s)
- Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Penglai Gong
- Department of Physics, Southern University of Science and Technology, Shenzhen, 5158055, P. R. China
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Institute of Life Science and Green Development, College of Physics Science and Technology, Hebei University, Baoding, 071002, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Anmin Nie
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Zhongyuan Liu
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Sanjun Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Li Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 5158055, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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