TMDs beyond MoS2 for Electrochemical Energy Storage

Asymmetric contact-induced selective doping of CVD-grown bilayer WS2 and its application in high-performance photodetection with an ultralow dark current

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are excellent candidates for high-performance optoelectronics due to their high carrier mobility, air stability and strong optical absorption. However, photodetectors made with monolayer TMDs often exhibit a high dark current, and thus, there is a scope for further improvement. Herein, we developed a 2D bilayer tungsten disulfide (WS2) based photodetector (PD) with asymmetric contacts that exhibits an exceptionally low dark current and high specific detectivity. High-quality and large-area monolayer and bilayer WS2 flakes were synthesized using a thermal chemical vapor deposition system. Compared to conventional symmetric contact electrodes, utilizing metal electrodes with higher and lower work functions relative to bilayer WS2 aids in achieving asymmetric lateral doping in the WS2 flakes. This doping asymmetry was confirmed through the photoluminescence spectral profile and Raman mapping analysis. With the asymmetric contacts on bilayer WS2, we find evidence of selective doping of electrons and holes near the Ti and Au contacts, respectively, while the WS2 region away from the contacts remains intrinsic. When compared with the symmetric contact case, the dark current in the WS2 PD with asymmetric (Au, Ti) contact decreases by an order of magnitude under reverse bias with a concomitant increase in the photocurrent, resulting in an improved on/off ratio of ∼105 and overall improved device performance under identical illumination conditions. We explained this improved performance based on the energy band alignment showing a unidirectional charge flow under light illumination. Our results indicate that the planar device structure and compatibility with current nanofabrication technologies can facilitate its integration into advanced chips for futuristic low-power optoelectronic and nanophotonic applications.

Piezoelectric catalytic driven advanced oxidation process using two-dimensional metal dichalcogenides for wastewater pollutants remediation

The public and society have increasingly recognized numerous grave environmental issues, including water pollution, attributed to the rapid expansion of industrialization and agriculture. Renewable energy-driven catalytic advanced oxidation processes (AOPs) represent a green, sustainable, and environmentally friendly approach to meet the demands of environmental remediation. In this context, 2D transition metal dichalcogenides (TMDCs) piezoelectric materials, with their non-centrosymmetric crystal structure, exhibit unique features. They create dipole polarization, inducing a built-in electric field that generates polarized holes and electrons and triggers redox reactions, thereby facilitating the generation of reactive oxygen species for wastewater pollutant remediation. A broad spectrum of 2D TMDCs piezoelectric materials have been explored in self-integrated Fenton-like processes and persulfate activation processes. These materials offer a more simplistic and practical method than traditional approaches. Consequently, this review highlights recent advancements in 2D TMDCs piezoelectric catalysts and their roles in wastewater pollutant remediation through piezocatalytic-driven AOPs, such as Fenton-like processes and sulfate radicals-based oxidation processes.

Advances in Printed Electronic Textiles

Electronic textiles (e-textiles) have emerged as a revolutionary solution for personalized healthcare, enabling the continuous collection and communication of diverse physiological parameters when seamlessly integrated with the human body. Among various methods employed to create wearable e-textiles, printing offers unparalleled flexibility and comfort, seamlessly integrating wearables into garments. This has spurred growing research interest in printed e-textiles, due to their vast design versatility, material options, fabrication techniques, and wide-ranging applications. Here, a comprehensive overview of the crucial considerations in fabricating printed e-textiles is provided, encompassing the selection of conductive materials and substrates, as well as the essential pre- and post-treatments involved. Furthermore, the diverse printing techniques and the specific requirements are discussed, highlighting the advantages and limitations of each method. Additionally, the multitude of wearable applications made possible by printed e-textiles is explored, such as their integration as various sensors, supercapacitors, and heated garments. Finally, a forward-looking perspective is provided, discussing future prospects and emerging trends in the realm of printed wearable e-textiles. As advancements in materials science, printing technologies, and design innovation continue to unfold, the transformative potential of printed e-textiles in healthcare and beyond is poised to revolutionize the way wearable technology interacts and benefits.

Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials

Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-dimensional (2D) materials. Thus, it is critical to develop a method for convenient and reliable defect quantification. Scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) possess the required atomic resolution but have practical disadvantages. Here, we benchmark conductive atomic force microscopy (CAFM) by a direct comparison with STM in the characterization of transition metal dichalcogenides (TMDs). The results conclusively demonstrate that CAFM and STM image identical defects, giving results that are equivalent both qualitatively (defect appearance) and quantitatively (defect density). Further, we confirm that CAFM can achieve single-atom resolution, similar to that of STM, on both bulk and monolayer samples. The validation of CAFM as a facile and accurate tool for defect quantification provides a routine and reliable measurement that can complement other standard characterization techniques.

Automated mechanical exfoliation technique: a spin pumping study in YIG/TMD heterostructures

Spintronics devices rely on the generation and manipulation of spin currents. Two-dimensional transition-metal dichalcogenides (TMDs) are among the most promising materials for a spin current generation due to a lack of inversion symmetry at the interface with the magnetic material. Here, we report on the fabrication of Yttrium Iron Garnet(YIG)/TMD heterostructures by means of a crude and fast method. While the magnetic insulator single-crystalline YIG thin films were grown by magnetron sputtering, the TMDs, namely MoS2 and MoSe2, were directly deposited onto YIG films using an automated mechanical abrasion method. Despite the brute force aspect of the method, it produces high-quality interfaces, which are suitable for spintronic device applications. The spin current density and the effective spin mixing conductance were measured by ferromagnetic resonance, whose values found are among the highest reported in the literature. Our method can be scaled to produce ferromagnetic materials/TMD heterostructures on a large scale, further advancing their potential for practical applications.

Investigation of reversible metal ion (Li+, Na+, Mg2+, Al3+) insertion in MoTe2 for rechargeable aqueous batteries

In this work, we report the electrochemical reactivity of MoTe₂ for various metal ions with special emphasis on Al³⁺ ion storage in aqueous electrolytes for the first time. A stable discharge capacity of 100 mA h g^-1 over 250 cycles at a current density of 1 Ag^-1 could be obtained for the Al³⁺ ion, whereas inferior storage capacities were shown for other metal ions.

Comprehensively Understanding the Role of Anion Vacancies on K-Ion Storage: A Case Study of Se-Vacancy-Engineered VSe2

Anion vacancy engineering (AVE) is widely used to improve the Li-ion and Na-ion storage of conversion-type anode materials. However, AVE is still an emerging strategy in K-ion batteries, which are promising for large-scale energy storage. In addition, the role of anion vacancies on ion storage is far from clear, despite several proposed explanations. Herein, by employing VSe₂ as a model conversion-type anode material, Se vacancies are intentionally introduced (labeled as P-VSe_2-x ) to investigate their effect on K⁺ storage. The P-VSe_2-x shows excellent cyclability in half cells (143 mA h g^-1 at 3.0 A g^-1 after 1000 cycles) and high energy density in coin-type full cells (206.8 Wh kg^-1 ). By applying various electrochemical techniques, the effects of Se vacancies on the redox potentials of K-ion insertion/extraction and the K-ion diffusion in electrodes upon cycling are uncovered. In addition, the structural evolution of Se vacancies during potassiation/de-potassiation using various operando and ex characterizations is revealed. Moreover, it is demonstrated that Se vacancies can facilitate the breaking of VSe bonds upon the P-VSe_2-x conversion using theoretical calculations. This work comprehensively explains the role of anion vacancies in ion storage for developing high-performance conversion-type anode materials.

Improving the Reaction Kinetics by Annealing MoS2/PVP Nanoflowers for Sodium-Ion Storage

Under the ever-growing demand for electrochemical energy storage devices, developing anode materials with low cost and high performance is crucial. This study established a multiscale design of MoS2/carbon composites with a hollow nanoflower structure (MoS2/C NFs) for use in sodium-ion batteries as anode materials. The NF structure consists of several MoS2 nanosheets embedded with carbon layers, considerably increasing the interlayer distance. Compared with pristine MoS2 crystals, the carbon matrix and hollow-hierarchical structure of MoS2/C exhibit higher electronic conductivity and optimized thermodynamic/kinetic potential for the migration of sodium ions. Hence, the synthesized MoS2/C NFs exhibited an excellent capacity of 1300 mA h g−1 after 50 cycles at a current density of 0.1 A g−1 and 630 mA h g−1 at 2 A g−1 and high-capacity retention at large charge/discharge current density (80% after 600 cycles 2 A g−1). The suggested approach can be adopted to optimize layered materials by embedding layered carbon matrixes. Such optimized materials can be used as electrodes in sodium-ion batteries, among other electrochemical applications.

WS2 Nanotube-Embedded SiOC Fibermat Electrodes for Sodium-Ion Batteries

Layered transition metal dichalcogenides (TMDs) such as tungsten disulfide (WS₂) are promising materials for a wide range of applications, including charge storage in batteries and supercapacitors. Nevertheless, TMD-based electrodes suffer from bottlenecks such as capacity fading at high current densities, voltage hysteresis during the conversion reaction, and polysulfide dissolution. To tame such adverse phenomena, we fabricate composites with WS₂ nanotubes. Herein, we report on the superior electrochemical performance of ceramic composite fibers comprising WS₂ nanotubes (WS₂NTs) embedded in a chemically robust molecular polymer-derived ceramic matrix of silicon-oxycarbide (SiOC). Such a heterogeneous fiber structure was obtained via electrospinning of WS₂NT/preceramic polymer solution followed by pyrolysis at elevated temperatures. The electrode capacity fading in WS₂NTs was curbed by the synergistic effect between WS₂NT and SiOC. As a result, the composite electrode exhibits high initial capacity of 454 mAh g^-1 and the capacity retention approximately 2-3 times higher than that of the neat WS₂NT electrode.

Smart Electronic Textile-Based Wearable Supercapacitors

Electronic textiles (e-textiles) have drawn significant attention from the scientific and engineering community as lightweight and comfortable next-generation wearable devices due to their ability to interface with the human body, and continuously monitor, collect, and communicate various physiological parameters. However, one of the major challenges for the commercialization and further growth of e-textiles is the lack of compatible power supply units. Thin and flexible supercapacitors (SCs), among various energy storage systems, are gaining consideration due to their salient features including excellent lifetime, lightweight, and high-power density. Textile-based SCs are thus an exciting energy storage solution to power smart gadgets integrated into clothing. Here, materials, fabrications, and characterization strategies for textile-based SCs are reviewed. The recent progress of textile-based SCs is then summarized in terms of their electrochemical performances, followed by the discussion on key parameters for their wearable electronics applications, including washability, flexibility, and scalability. Finally, the perspectives on their research and technological prospects to facilitate an essential step towards moving from laboratory-based flexible and wearable SCs to industrial-scale mass production are presented.

Stable and flexible photodetector based on liquid-phase exfoliated titanium disulfide nanosheets

Herein, the TiS₂nanosheets (NSs) are prepared from the TiS₂bulk by the liquid-phase exfoliation to fabricate photoelectrochemical-type (PEC) photodetector. SEM images and Raman spectra show the successful acquisition of the TiS₂NSs. The as-prepared TiS₂photodetector shows self-powered ability with an applicable photoresponsivity that is about 0.37μA W^-1under zero bias potential and 80 mW cm^-2visible light, and the response time of rise is 0.67 s and the decay time is 2.81 s. In this case, the photodetector is made of ITO-coated polyethylene terephthalate (PET), so it can maintain stable performance under the bending conditions. These results display that the as-prepared photodetector has excellent photoelectric properties, which facilitates the development of TiS₂NSs in optoelectronic devices.

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Two-dimensional transition metal dichalcogenides, such as MoS₂, are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS₂, TiS₂, and WS₂ films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H₂S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H₂ to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS _x films prepared within a broad range of deposition conditions have been systematically characterized. Film characteristics are correlated with results of field-effect transistors based on MoS₂ films deposited at 100 °C. The capability to deposit MoS₂ on poly(ethylene terephthalate) substrates showcases the potential of our process for flexible devices. Furthermore, the composition control achieved by tailoring plasma chemistry is relevant for all low-temperature plasma-enhanced deposition processes of metal chalcogenides.

Recent progress of hierarchical MoS2 nanostructures for electrochemical energy storage

Hierarchical MoS2 nanostructures are of increasing importance in energy storage via batteries or supercapacitors. Herein, the various hierarchical MoS2 materials as electrochemical electrode are reviewed in detail by classifying the...

Application of two-dimensional layered materials in surface-enhanced Raman spectroscopy (SERS)

2D materials are promising SERS substrates. Seven feasible strategies to improve the SERS performance of 2D substrate materials are summarized. The prospect of future progress in SERS and possible challenges of 2D layered materials are put forwarded.

Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study

The fluorescence-based optical imaging in the second near-infrared region (NIR-II, 1,000-1,700 nm) has broad applications in the biomedical field, but it is still difficult to find new NIR-II fluorescence materials in the two dimension. As a crucial characteristic of the electronic structure, the band structure determines the fundamental properties of two-dimensional materials, such as their optical excitations and electronic transportation. Therefore, we calculated the electronic structures and optical properties of different crystalline phases (1T phase and 2H phase) of pure monolayer MoS2 films and found that the 1T phase has better absorption and thus better fluorescence in the NIR-II window. However, its poor stability makes the 1T-phase MoS2 less useful in vivo bioimaging. By introducing vacancy defects and doping with foreign atoms, we successfully tuned the bandgap of the monolayer 2H-MoS2 and activated it in the NIR-II. Our results show that by engineering the vacancy defects, the bandgap of the 2H phase can be tailored to around 1 eV, and there are three candidates of vacancy structures that exhibit strong absorption in the NIR-II.