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Yoon H, Lee Y, Lee GY, Seo S, Park BK, Chung TM, Oh IK, Kim H. Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition. J Chem Phys 2024; 160:024302. [PMID: 38189606 DOI: 10.1063/5.0182690] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Accepted: 12/12/2023] [Indexed: 01/09/2024] Open
Abstract
Alkoxide precursors have been highlighted for depositing carbon-free films, but their use in Atomic Layer Deposition (ALD) often exhibits a non-saturated growth. This indicates no self-limiting growth due to the chain reaction of hydrolysis or ligand decomposition caused by β-hydride elimination. In the previous study, we demonstrated that self-limiting growth of ALD can be achieved using our newly developed precursor, hafnium cyclopentadienyl tris(N-ethoxy-2,2-dimethyl propanamido) [HfCp(edpa)3]. To elucidate the growth mechanism and the role of cyclopentadienyl (Cp) ligand in a heteroleptic alkoxide precursor, herein, we compare homoleptic and heteroleptic Hf precursors consisting of N-ethoxy-2,2-dimethyl propanamido (edpa) ligands with and without cyclopentadienyl ligand-hafnium tetrakis(N-ethoxy-2,2-dimethyl propanamido) [Hf(edpa)4] and HfCp(edpa)3. We also investigate the role of a Cp ligand in growth characteristics. By substituting an alkoxide ligand with a Cp ligand, we could modify the surface reaction during ALD, preventing undesired reactions. The last remaining edpa after Hf(edpa)4 adsorption can undergo a hydride elimination reaction, resulting in surface O-H generation. In contrast, Cp remains after the HfCp(edpa)3 adsorption. Accordingly, we observe proper ALD growth with self-limiting properties. Thus, a comparative study of different ligands of the precursors can provide critical clues to the design of alkoxide precursors for obtaining typical ALD growth with a saturation behavior.
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Affiliation(s)
- Hwi Yoon
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 03722, South Korea
| | - Yujin Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 03722, South Korea
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
| | - Ga Yeon Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 34114, South Korea
| | - Seunggi Seo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 03722, South Korea
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
| | - Bo Keun Park
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 34114, South Korea
| | - Taek-Mo Chung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 34114, South Korea
| | - Il-Kwon Oh
- Department of Electrical and Computer Engineering, Ajou University, 206 Worldcup-Ro, Yeongtong-Gu 16499, Suwon, South Korea
- Department of Intelligence Semiconductor Engineering, Ajou University, 206 Worldcup-Ro, Yeongtong-Gu 16499, Suwon, South Korea
| | - Hyungjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 03722, South Korea
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Lee GY, Yeo S, Han SH, Park BK, Eom T, Kim JH, Kim SH, Kim H, Son SU, Chung TM. Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films. Inorg Chem 2021; 60:17722-17732. [PMID: 34813316 DOI: 10.1021/acs.inorgchem.1c02339] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
This paper describes the synthesis of eight novel zirconium and hafnium complexes containing N-alkoxy carboxamidate-type ligands, as potential precursors for metal oxides and atomic layer deposition (ALD) for HfO2. A series of ligands, viz., N-ethoxy-2,2-dimethylpropanamide (edpaH), N-ethoxy-2-methylpropanamide (empaH), and N-methoxy-2,2-dimethylpropanamide (mdpaH), were used to afford complexes Zr(edpa)4 (1), Hf(edpa)4 (2), Zr(empa)4 (3), Hf(empa)4 (4), Zr(mdpa)4 (5), Hf(mdpa)4 (6), ZrCp(edpa)3 (7), and HfCp(edpa)3 (8). Thermogravimetric analysis curves assessed for the evaporation characteristics of complexes 1-8 revealed single-step weight losses with low residues, except for the mdpa-containing complexes. Single-crystal X-ray diffraction studies of 1, 2, 5, and 6 revealed that all the complexes have monomeric molecular structures, with the central metal ion surrounded by eight oxygen atoms from the four bidentate alkoxyalkoxide ligands. Among the complexes prepared, 8 exhibited a low melting point (64 °C), good volatility (1 Torr at 112 °C), high thermal stability, and excellent endurance over 6 weeks at 120 °C. Therefore, an ALD process for the growth of HfO2 was developed using HfCp(edpa)3 (8) as a novel precursor. Furthermore, the HfO2 film exhibited a low capacitance equivalent oxide thickness of ∼1.5 nm, with Jg as low as ∼3 × 10-4 A/cm2 at Vg -1 V in a metal-insulator-semiconductor capacitor (Au/HfO2/p-Si).
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Affiliation(s)
- Ga Yeon Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.,Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seungmin Yeo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.,School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Seong Ho Han
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Bo Keun Park
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.,Department of Chemical Convergence Materials, University of Science and Technology (UST), Deajeon 34113, Republic of Korea
| | - Taeyong Eom
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Jeong Hwan Kim
- Department of Advanced Materials Engineering, Hanbat National University, Daejeon 34158, Republic of Korea
| | - Soo-Hyun Kim
- School of Materials Science and Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 38541, Republic of Korea
| | - Hyungjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Seung Uk Son
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Taek-Mo Chung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.,Department of Chemical Convergence Materials, University of Science and Technology (UST), Deajeon 34113, Republic of Korea
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Zanders D, Ciftyurek E, Subaşı E, Huster N, Bock C, Kostka A, Rogalla D, Schierbaum K, Devi A. PEALD of HfO 2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases. ACS APPLIED MATERIALS & INTERFACES 2019; 11:28407-28422. [PMID: 31339290 DOI: 10.1021/acsami.9b07090] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A bottom-up approach starting with the development of new Hf precursors for plasma-enhanced atomic layer deposition (PEALD) processes for HfO2 followed by in situ thin-film surface characterization of HfO2 upon exposure to reactive gases via near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) is reported. The stability of thin films under simulated operational conditions is assessed, and the successful implementation of HfO2 dielectric layers in metal-insulator-semiconductor (MIS) capacitors is demonstrated. Among the series of newly synthesized mono-guanidinato-tris-dialkyl-amido class of Hf precursors, one of them, namely, [Hf{η2-(iPrN)2CNEtMe}(NEtMe)3], was representatively utilized with oxygen plasma, resulting in a highly promising low-temperature PEALD process at 60 °C. The new precursors were synthesized in the multigram scale and thoroughly characterized by thermogravimetric analyses, revealing high and tunable volatility reflected by appreciable vapor pressures and accompanied by thermal stability. Typical ALD growth characteristics in terms of linearity, saturation, and a broad ALD window with constant growth of 1.06 Å cycle-1 in the temperature range of 60-240 °C render this process very promising for fabricating high-purity smooth HfO2 layers. For the first time, NAP-XPS surface studies on selected HfO2 layers are reported upon exposure to reactive H2, O2, and H2O atmospheres at temperatures of up to 500 °C revealing remarkable stability against degradation. This can be attributed to the absence of surface defects and vacancies. On the basis of these promising results, PEALD-grown HfO2 films were used as dielectric layers in the MIS capacitor device fabrication exhibiting leakage current densities less than 10-7 A cm-2 at 2 MV cm-1 and permittivities of up to 13.9 without postannealing.
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Affiliation(s)
| | - Engin Ciftyurek
- Department of Materials Science, Institute of Experimental Physics and Condensed Matter , Heinrich-Heine-University Düsseldorf , 40225 Düsseldorf , Germany
| | | | | | | | | | | | - Klaus Schierbaum
- Department of Materials Science, Institute of Experimental Physics and Condensed Matter , Heinrich-Heine-University Düsseldorf , 40225 Düsseldorf , Germany
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Karunarathne MC, Baumann JW, Heeg MJ, Martin PD, Winter CH. Synthesis, structural characterization, and volatility evaluation of zirconium and hafnium amidate complexes. J Organomet Chem 2017. [DOI: 10.1016/j.jorganchem.2017.03.003] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Pang CS, Hwu JG. Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer. NANOSCALE RESEARCH LETTERS 2014; 9:464. [PMID: 25246869 PMCID: PMC4160324 DOI: 10.1186/1556-276x-9-464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/10/2014] [Accepted: 08/26/2014] [Indexed: 06/03/2023]
Abstract
Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (D it) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower D it. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.
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Affiliation(s)
- Chin-Sheng Pang
- Department of Electrical Engineering and the Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Jenn-Gwo Hwu
- Department of Electrical Engineering and the Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
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Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors. ACTA ACUST UNITED AC 2014. [DOI: 10.1002/cvde.201400055] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
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Devi A. ‘Old Chemistries’ for new applications: Perspectives for development of precursors for MOCVD and ALD applications. Coord Chem Rev 2013. [DOI: 10.1016/j.ccr.2013.07.025] [Citation(s) in RCA: 110] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Clavel G, Rauwel E, Willinger MG, Pinna N. Non-aqueous sol–gel routes applied to atomic layer deposition of oxides. ACTA ACUST UNITED AC 2009. [DOI: 10.1039/b806215c] [Citation(s) in RCA: 37] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Dezelah CL, Niinistö J, Kukli K, Munnik F, Lu J, Ritala M, Leskelä M, Niinistö L. The Atomic Layer Deposition of HfO2and ZrO2using Advanced Metallocene Precursors and H2O as the Oxygen Source. ACTA ACUST UNITED AC 2008. [DOI: 10.1002/cvde.200806716] [Citation(s) in RCA: 45] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Rauwel E, Clavel G, Willinger MG, Rauwel P, Pinna N. Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition. Angew Chem Int Ed Engl 2008. [DOI: 10.1002/ange.200705550] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Rauwel E, Clavel G, Willinger MG, Rauwel P, Pinna N. Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition. Angew Chem Int Ed Engl 2008; 47:3592-5. [DOI: 10.1002/anie.200705550] [Citation(s) in RCA: 44] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Black K, Aspinall HC, Jones AC, Przybylak K, Bacsa J, Chalker PR, Taylor S, Zhao CZ, Elliott SD, Zydor A, Heys PN. Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors. ACTA ACUST UNITED AC 2008. [DOI: 10.1039/b807205a] [Citation(s) in RCA: 37] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Seo M, Min YS, Kim SK, Park TJ, Kim JH, Na KD, Hwang CS. Atomic layer deposition of hafnium oxide from tert-butoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability. ACTA ACUST UNITED AC 2008. [DOI: 10.1039/b806382f] [Citation(s) in RCA: 38] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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O'Kane R, Gaskell J, Jones A, Chalker P, Black K, Werner M, Taechakumput P, Taylor S, Heys P, Odedra R. Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium-Cyclopentadienyl Precursors. ACTA ACUST UNITED AC 2007. [DOI: 10.1002/cvde.200706589] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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Cho W, An KS, Chung TM, Kim C, So BS, You YH, Hwang JH, Jung D, Kim Y. ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4. ACTA ACUST UNITED AC 2006. [DOI: 10.1002/cvde.200506458] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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de Rouffignac P, Gordon R. Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications. ACTA ACUST UNITED AC 2006. [DOI: 10.1002/cvde.200506377] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Jones A, Aspinall H, Chalker P, Potter R, Manning T, Loo Y, O'Kane R, Gaskell J, Smith L. MOCVD and ALD of High-k Dielectric Oxides Using Alkoxide Precursors. ACTA ACUST UNITED AC 2006. [DOI: 10.1002/cvde.200500023] [Citation(s) in RCA: 54] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Potter RJ, Chalker PR, Manning TD, Aspinall HC, Loo YF, Jones AC, Smith LM, Critchlow GW, Schumacher M. Deposition of HfO2, Gd2O3 and PrOx by Liquid Injection ALD Techniques. ACTA ACUST UNITED AC 2005. [DOI: 10.1002/cvde.200406348] [Citation(s) in RCA: 59] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Niinistö J, Putkonen M, Niinistö L, Stoll SL, KukliAlso at: University of Tartu, K, SajavaaraAlso at: K. U. Leuven, Ins T, Ritala M, Leskelä M. Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water. ACTA ACUST UNITED AC 2005. [DOI: 10.1039/b417866c] [Citation(s) in RCA: 57] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Jones AC, Aspinall HC, Chalker PR, Potter RJ, Kukli K, Rahtu A, Ritala M, Leskelä M. Some recent developments in the MOCVD and ALD of high-κ dielectric oxides. ACTA ACUST UNITED AC 2004. [DOI: 10.1039/b405525j] [Citation(s) in RCA: 77] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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