Non-stoichiometry of the crystal lattice of antimony telluride

Influence of Nanoparticle Processing on the Thermoelectric Properties of (Bix Sb1-X )2 Te3 Ternary Alloys

The synthesis of phase-pure ternary solutions of tetradymite-type materials (Bix Sb1-x )2 Te3 (x=0.25; 0.50; 0.75) in an ionic liquid approach has been carried out. The nanoparticles are characterized by means of energy-dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), and transmission electron microscopy. In addition, the role of different processing approaches on the thermoelectric properties - Seebeck coefficient as well as electrical and thermal conductivity - is demonstrated.

Realizing high thermoelectric performance in Te nanocomposite through Sb2Te3 incorporation

Enhancement of thermoelectric performance in Te–Sb₂Te₃ nanocomposite results from the improved holes concentration and strengthened phonon scattering.

Electronic properties of (Sb;Bi)2Te3 colloidal heterostructured nanoplates down to the single particle level

We investigate the potential use of colloidal nanoplates of Sb₂Te₃ by conducting transport on single particle with in mind their potential use as 3D topological insulator material. We develop a synthetic procedure for the growth of plates with large lateral extension and probe their infrared optical and transport properties. These two properties are used as probe for the determination of the bulk carrier density and agree on a value in the 2–3 × 10¹⁹ cm⁻³ range. Such value is compatible with the metallic side of the Mott criterion which is also confirmed by the weak thermal dependence of the conductance. By investigating the transport at the single particle level we demonstrate that the hole mobility in this system is around 40 cm²V⁻¹s⁻¹. For the bulk material mixing n-type Bi₂Te₃ with the p-type Sb₂Te₃ has been a successful way to control the carrier density. Here we apply this approach to the case of colloidally obtained nanoplates by growing a core-shell heterostructure of Sb₂Te₃/Bi₂Te₃ and demonstrates a reduction of the carrier density by a factor 2.5.

Emergent surface superconductivity in the topological insulator Sb2Te3

Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter where exotic electronic phases of Dirac particles should arise. Here we report on superconductivity in the topological insulator Sb2Te3 with transition to zero resistance induced through a minor tuning of growth chemistry that depletes bulk conduction channels. The depletion shifts Fermi energy towards the Dirac point as witnessed by a factor of 300 reduction of bulk carrier density and by the largest carrier mobility (≳25,000 cm(2) V(-1) s(-1)) found in any topological material. Direct evidence from transport, the unprecedentedly large diamagnetic screening, and the presence of ∼25 meV gaps detected by scanning tunnelling spectroscopy reveal the superconducting condensate to emerge first in surface puddles, with the onset of global phase coherence at ∼9 K. The rich structure of this state lends itself to manipulation via growth conditions and the material parameters such as Fermi velocity and mean free path.

A Facile Surfactant-Assisted Reflux Method for the Synthesis of Single-Crystalline Sb2Te3 Nanostructures with Enhanced Thermoelectric Performance

Antimony telluride (Sb2Te3) and its based alloys are of importance to p-type semiconductors for thermoelectric applications near room temperature. Herein, we report a simple, low-energy intensive, and scalable surfactant-assisted reflux method for the synthesis of Sb2Te3 nanoparticles in the solvent ethylene glycol (EG) at low temperatures (120-180 °C). The formation mechanism of platelike Sb2Te3 nanoparticles is proposed. Also, it is found that the size, shape, and chemical composition of the products could be controlled by the introduction of organic surfactants (CTAB, PVP, etc.) or inorganic salts (EDTA-Na2, NaOH, etc.). Additionally, the collected Sb2Te3 nanoparticles were further fabricated into nanostructured pellets using cold-compaction and annealing techniques. Low resistivity [(7.37-19.4) × 10(-6) Ω m], moderate Seebeck coefficient (103-141 μV K(-1)), and high power factor (10-16 × 10(-4) W m(-1) K(-2)) have been achieved in our Sb2Te3-nanostructured bulk materials. The relatively low thermal conductivity (1.32-1.55 W m(-1) K(-1)) is attained in the nanobulk made of PVP-modified nanoparticles, and values of ZT in the range of 0.24-0.37 are realized at temperatures ranging from 50 to 200 °C. Our researches set forth a new avenue in promoting practical applications of Sb2Te3-based thermoelectric power generation or cooling devices.

Seebeck and figure of merit enhancement in nanostructured antimony telluride by antisite defect suppression through sulfur doping

Antimony telluride has a low thermoelectric figure of merit (ZT < ∼0.3) because of a low Seebeck coefficient α arising from high degenerate hole concentrations generated by antimony antisite defects. Here, we mitigate this key problem by suppressing antisite defect formation using subatomic percent sulfur doping. The resultant 10-25% higher α in bulk nanocrystalline antimony telluride leads to ZT ∼ 0.95 at 423 K, which is superior to the best non-nanostructured antimony telluride alloys. Density functional theory calculations indicate that sulfur increases the antisite formation activation energy and presage further improvements leading to ZT ∼ 2 through optimized doping. Our findings are promising for designing novel thermoelectric materials for refrigeration, waste heat recovery, and solar thermal applications.