Alignment of semiconductor nanowires using ion beams

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures. In the present work, molecular dynamics (MD) is conducted to investigate the irradiation effects and mechanical response changes of GaAs nanowires (NWs) under heavy-ion irradiation. For this simulation, single-ion damage and high-dose ion injection are used to reveal defect generation and accumulation mechanisms. The presence of surface effects gives an advantage to defects in rapid accumulation but is also the main cause of dynamic annihilation of the surface. Overall, the defects exhibit a particular mechanism of rapid accumulation to saturation. Moreover, for the structural transformation of irradiated GaAs NWs, amorphization is the main mode. The main damage mechanism of NWs is sputtering, which also leads to erosion refinement at high doses. The high flux ions lead to a softening of the mechanical properties, which can be reflected by a reduction in yield strength and Young’s modulus.

Ion beam-induced bending of TiO2 nanowires with bead-like and prismatic shapes

Ion beam irradiation is a promising method to manipulate the composition and shape of nanowires. It causes the formation of crystal defects like vacancies and dislocations, and consequently, a volume expansion within the irradiated region, giving rise to the nanowire bending. The bending effect has been extensively discussed within nanowires with different diameters under ion beams with varying energies and ion fluences. However, the behaviors of nanowires with complicated shapes, which may have non-uniform irradiated regions due to the changing angle of incidence and shadowing effect, have remained largely unknown. Herein, the structural changes and bending of TiO₂ nanowires with both bead-like and prismatic shapes are investigated under a Ga⁺ ion beam. The multi-faceted morphology, and consequently, varying angles of incidence, result in inhomogeneous irradiation and volume expansion. As a result, significant bending is only observed in prismatic nanowires. Since irradiation is confined within the half of nanowires facing the ion beam, the bending of nanowires is reversible by changing the direction of the ion beam. In order to provide insights into the tailoring composition and morphology of nanowires, we anticipate that this finding can establish the beam analog at the nanoscale, the bending of which can be tuned by ion irradiation.

TiO₂ nanowires with prismatic shape, show significant bending under an ion beam, compared to those with a bead-like shape.

2-Keto-L-Gulonic Acid Improved the Salt Stress Resistance of Non-heading Chinese Cabbage by Increasing L-Ascorbic Acid Accumulation

Salt stress has long been a prominent obstacle that restricts crop growth, and increasing the L-ascorbic acid (ASA) content of crops is an effective means of alleviating this stress. 2-Keto-L-gulonic acid (2KGA) is a precursor used in industrial ASA production as well as an ASA degradation product in plants. However, to date, no study has investigated the effects of 2KGA on ASA metabolism and salt stress. Here, we evaluated the potential of using 2KGA to improve crop resistance to salt stress (100mM NaCl) through a cultivation experiment of non-heading Chinese cabbage (Brassica campestris ssp. chinensis). The results showed that the leaf and root biomass were significantly improved by 2KGA application. The levels of metabolites and enzymes related to stress resistance were increased, whereas the hydrogen peroxide (H₂O₂) and malondialdehyde (MDA) contents were decreased. Lipid peroxidation and cell membrane damage were alleviated following 2KGA treatment. Positive correlations were found between photosynthetic pigments and organic solutes, ASA and photosynthetic pigments, and ASA and antioxidant enzymes. In contrast, negative correlations were observed between antioxidant enzymes and H₂O₂/MDA. Moreover, the expression levels of L-gulono-1,4-lactone oxidase, GDP-mannose pyrophosphorylase, dehydroascorbate reductase-3, and ascorbate peroxidase were increased by 2KGA treatment. These results suggested that exogenous 2KGA application can relieve the inhibitory effect of salt stress on plant growth, and the promotion of ASA synthesis may represent a critical underlying mechanism. Our findings have significant implications for the future application of 2KGA or its fermentation residue in agriculture.

NanoRobotic Structures with Embedded Actuation via Ion Induced Folding

4D structures are tridimensional structures with time-varying abilities that provide high versatility, sophisticated designs, and a broad spectrum of actuation and sensing possibilities. The downsizing of these structures below 100 μm opens up exceptional opportunities for many disciplines, including photonics, acoustics, medicine, and nanorobotics. However, it requires a paradigm shift in manufacturing methods, especially for dynamic structures. A novel fabrication method based on ion-induced folding of planar multilayer structures embedding their actuation is proposed-the planar structures are fabricated in bulk through batch microfabrication techniques. Programmable and accurate bidirectional foldings (-70° - +90°) of Silica/Chromium/Aluminium (SiO₂ /Cr/Al) multilayer structures are modeled, experimentally demonstrated then applied to embedded electrothermal actuation of controllable and dynamic 4D nanorobotic structures. The method is used to produce high-performances case-study grippers for nanorobotic applications in confined environments. Once folded, a gripping task at the nano-scale is demonstrated. The proposed fabrication method is suitable for creating small-scale 4D systems for nanorobotics, medical devices, and tunable metamaterials, where rapid folding and enhanced dynamic control are required.

Defect-mediated photoluminescence enhancement in ZnO/ITO via MeV Cu++ ion irradiation

Zinc oxide (ZnO) nanowires play a pivotal role in the nanoworld due to their broad range of characteristics and applications. In this work, structural and optical properties of ZnO nanowires grown on indium doped tin oxide (ITO) coated glass have been modified by copper (Cu⁺⁺) ions irradiation at constant energy of 0.7 MeV. The X-ray diffraction (XRD), photoluminescence (PL), and field emission scanning electron microscope (FESEM) are used to examine changes in the nanowires. XRD results show that the crystallite size first decreases and then increases with high ion dose while peaks' intensity decreases continuously with increasing the dose. The absence of (102) plane after irradiation depicts the defects formation. FESEM clearly shows the damage that occurred in the density of nanowires and also depicts the reduced charging effect with increasing dose. The PL spectra indicate the strong near-band edge peak and green luminescence enhancement has been recorded due to low dose ion irradiation.

Ultra-long high quality catalyst-free WO3 nanowires for fabricating high-performance visible photodetectors

This work presents a study on the controlled growth of WO₃ nanowires via chemical vapor deposition without catalyst, and their potential applications in visible photodetectors. The influence of growth conditions on the morphology of WO₃ nanowires is studied in order to understand the growth mechanism of WO₃ nanowires, and ultra-long (60 [Formula: see text], the longest one ever reported) WO₃ nanowires with a spindle shape are achieved by optimizing the growth conditions. It was found that the length of WO₃ nanowires increases from 15 [Formula: see text] to 60 [Formula: see text] with increasing the argon carrier gas flow rate from 30 sccm to 90 sccm, and then saturates with further increasing the argon carrier gas flow rate. However, the length of WO₃ nanowires reduces from 60 [Formula: see text] to 19 [Formula: see text] with increasing the tube inner pressure from 2.5 Torr to 3.5 Torr. The photoconductor detectors based on WO₃ single nanowires present excellent device performance with a responsivity as high as 19 A W^-1 at a bias of 0.1 V, a detectivity as high as 1.06 × 10¹¹ Jones, and a response (rising and decay) time as short as 8 ms under the illumination of a 404 nm laser. These results indicate the great potential of WO₃ nanowires for applications in fabricating high performance visible photodetectors.

Controlled Manipulation and Multiscale Modeling of Suspended Silicon Nanostructures under Site-Specific Ion Irradiation

In this work, controlled bidirectional deformation of suspended nanostructures by site-specific ion irradiation is presented. Multiscale modeling of the bidirectional deformation of nanostructures by site-specific ion irradiation is presented, incorporating molecular dynamics (MD) simulations together with finite element analysis, to substantiate the bending mechanism. Strain engineering of the free-standing nanostructure is employed for controlled deformation through site-specific kiloelectronvolt ion irradiation experimentally using a focused ion beam. We report the detailed bending mechanism of suspended silicon (Si) nanostructures through ion-induced irradiations. MD simulations are presented to understand the ion-solid interactions, defects formation in the silicon nanowire. The atomic-scale simulations reveal that the ion irradiation-induced bidirectional bending occurs through the development of localized tensile-compressive stresses in the lattice due to defect formation associated with atomic displacements. With an increasing ion dose, the evolution of localized tensile to compressive stress is observed, developing the alternate bending directions calculated through finite element analysis. The findings of multiscale modeling are in excellent agreement with the bidirectional nature of bending observed through the experiments. The developed in situ approach for bidirectional controlled manipulation of nanostructures in this work can be used for nanofabrication of numerous novel three-dimensional configurations and can provide a route toward functional nanostructures and devices.

A Programmable Nanofabrication Method for Complex 3D Meta-Atom Array Based on Focused-Ion-Beam Stress-Induced Deformation Effect

Due to their unique electromagnetic properties, meta-atom arrays have always been a hotspot to realize all kinds of particular functions, and the research on meta-atom structure has extended from two-dimensions (2D) to three-dimensions (3D) in recent years. With the continuous pursuit of complex 3D meta-atom arrays, the increasing demand for more efficient and more precise nanofabrication methods has encountered challenges. To explore better fabrication methods, we presented a programmable nanofabrication method for a complex 3D meta-atom array based on focused-ion-beam stress-induced deformation (FIB-SID) effect and designed a distinctive nanostructure array composed of periodic 3D meta-atoms to demonstrate the presented method. After successful fabrication of the designed 3D meta-atom arrays, measurements were conducted to investigate the electric/magnetic field properties and infrared spectral characteristics using scanning cathodoluminescence (CL) microscopic imaging and Fourier transform infrared (FTIR) spectroscopy, which revealed a certain excitation mode induced by polarized incident IR light near 8 μm. Besides the programmability for complex 3D meta-atoms and wide applicability of materials, a more significant advantage of the method is that a large-scale array composed of complex 3D meta-atoms can be processed in a quasi-parallel way, which improves the processing efficiency and the consistency of unit cells dramatically.

Tunable Anelasticity in Amorphous Si Nanowires

In situ bending tests of amorphous Si nanowires (a-Si NWs) found different elastic behavior depending on whether they were straight or curved to begin with. The axially straight NWs exhibit pure elastic deformation; however, the axially curved NWs exhibit obvious anelastic behavior when they are bent in the direction of original curvature. On the basis of STEM-EELS analysis, we propose that the underlying mechanism for this anelastic behavior is a bond-switching assisted redistribution of the nonuniform density (structure) in the curved NWs under the inhomogeneous stress field. This mechanism was further supported by the fact that the originally straight a-Si NWs also display similar anelasticity with the as-grown curved NWs after focused ion beam irradiation that can cause nonuniform structure distribution. As compared to what has been reported in other 1D materials, the anelasticity of a-Si NWs can be tuned by modifying their morphology, controlling the loading direction, or irradiating them via ion beam. Our findings suggest that a-Si NWs could be a promising material in the nanoscale damping systems, especially the semiconductor nanodevices.

Weaving nanostructures with site-specific ion induced bidirectional bending

Site-specific ion-irradiation is a promising tool fostering strain-engineering of freestanding nanostructures to realize 3D-configurations towards various functionalities. We first develop a novel approach of fabricating freestanding 3D silicon nanostructures by low dose ion-implantation followed by chemical-etching. The fabricated nanostructures can then be deformed bidirectionally by varying the local irradiation of kiloelectronvolt gallium ions. By further tuning the ion-dose and energy, various nanostructure configurations can be realized, thus extending its horizon to new functional 3D-nanostructures. It has been revealed that at higher-energies (∼30 kV), the nanostructures can exhibit two-stage bidirectional-bending in contrast to the bending towards the incident-ions at lower-energies (∼16), implying an effective transfer of kinetic-energy. Computational studies show that the spatial-distribution of implanted-ions, dislocated silicon atoms, has potentially contributed to the local development of stresses. Nanocharacterization confirms the formation of two distinguishable ion-irradiated and un-irradiated regions, while the smoothened morphology of the irradiated-surface suggested that the bending is also coupled with sputtering at higher ion-doses. The bending effects associated with local ion irradiation in contrast to global ion irradiation are presented, with the mechanism elucidated. Finally, weaving of nanostructures is demonstrated through strain-engineering for new nanoscale artefacts such as ultra-long fully-bent nanowires, nano-hooks, and nano-meshes. The aligned growth of bacterial-cells is observed on the fabricated nanowires, and a mesh based "bacterial-trap" for site-specific capture of bacterial cells is demonstrated emphasizing the versatile nature of the current approach.

Ion-beam-induced bending of semiconductor nanowires

The miniaturisation of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion beam-induced deformation effects. In this work, transmission electron microscopy with in situ ion bombardment has been used to directly observe the evolution of individual silicon and germanium NWs under irradiation. Silicon NWs were irradiated with either 6 keV neon ions or xenon ions at 5, 7 or 9.5 keV with a flux of 3 × 10¹³ ions cm^-2 s^-1. Germanium NWs were irradiated with 30 or 70 keV xenon ions with a flux of 10¹³ ions cm^-2 s^-1. These new results are combined with those reported in the literature in a systematic analysis using a custom implementation of the transport of ions in matter Monte Carlo computer code to facilitate a direct comparison with experimental results taking into account the wide range of experimental conditions. Across the various studies this has revealed underlying trends and forms the basis of a critical review of the various mechanisms which have been proposed to explain the deformation of semiconductor NWs under ion irradiation.

Ion-beam-induced bending of semiconductor nanowires

The miniaturisation of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion beam-induced deformation effects. In this work, transmission electron microscopy with in situ ion bombardment has been used to directly observe the evolution of individual silicon and germanium NWs under irradiation. Silicon NWs were irradiated with either 6 keV neon ions or xenon ions at 5, 7 or 9.5 keV with a flux of 3 × 10¹³ ions cm^-2 s^-1. Germanium NWs were irradiated with 30 or 70 keV xenon ions with a flux of 10¹³ ions cm^-2 s^-1. These new results are combined with those reported in the literature in a systematic analysis using a custom implementation of the transport of ions in matter Monte Carlo computer code to facilitate a direct comparison with experimental results taking into account the wide range of experimental conditions. Across the various studies this has revealed underlying trends and forms the basis of a critical review of the various mechanisms which have been proposed to explain the deformation of semiconductor NWs under ion irradiation.

Direct Measurement of the Intrinsic Sharpness of Magnetic Interfaces Formed by Chemical Disorder Using a He+ Beam

Using ion beams to locally modify material properties and subsequently drive magnetic phase transitions is rapidly gaining momentum as the technique of choice for the fabrication of magnetic nanoelements. This is because the method provides the capability to engineer in three dimensions on the nanometer length scale. This will be an important consideration for several emerging magnetic technologies (e.g., spintronic devices and racetrack and random-access memories) where device functionality will hinge on the spatial definition of the incorporated magnetic nanoelements. In this work, the fundamental sharpness of a magnetic interface formed by nanomachining FePt₃ films using He⁺ irradiation is investigated. Through careful selection of the irradiating ion energy and fluence, room-temperature ferromagnetism is locally induced into a fractional volume of a paramagnetic (PM) FePt₃ film by modifying the chemical order parameter. A combination of transmission electron microscopy, magnetometry, and polarized neutron reflectometry measurements demonstrates that the interface over which the PM-to-ferromagnetic modulation occurs in this model system is confined to a few atomic monolayers only, while the structural boundary transition is less well-defined. Using complementary density functional theory, the mechanism for the ion-beam-induced magnetic transition is elucidated and shown to be caused by an intermixing of Fe and Pt atoms in antisite defects above a threshold density.

Effects of crystallographic and geometric orientation on ion beam sputtering of gold nanorods

Nanostructures may be exposed to irradiation during their manufacture, their engineering and whilst in-service. The consequences of such bombardment can be vastly different from those seen in the bulk. In this paper, we combine transmission electron microscopy with in situ ion irradiation with complementary computer modelling techniques to explore the physics governing the effects of 1.7 MeV Au ions on gold nanorods. Phenomena surrounding the sputtering and associated morphological changes caused by the ion irradiation have been explored. In both the experiments and the simulations, large variations in the sputter yields from individual nanorods were observed. These sputter yields have been shown to correlate with the strength of channelling directions close to the direction in which the ion beam was incident. Craters decorated by ejecta blankets were found to form due to cluster emission thus explaining the high sputter yields.

Programmable Bidirectional Folding of Metallic Thin Films for 3D Chiral Optical Antennas

3D structures with characteristic lengths ranging from nanometer to micrometer scale often exhibit extraordinary optical properties, and have been becoming an extensively explored field for building new generation nanophotonic devices. Albeit a few methods have been developed for fabricating 3D optical structures, constructing 3D structures with nanometer accuracy, diversified materials, and perfect morphology is an extremely challenging task. This study presents a general 3D nanofabrication technique, the focused ion beam stress induced deformation process, which allows a programmable and accurate bidirectional folding (-70°-+90°) of various metal and dielectric thin films. Using this method, 3D helical optical antennas with different handedness, improved surface smoothness, and tunable geometries are fabricated, and the strong optical rotation effects of single helical antennas are demonstrated.

In Situ Monitored Self-Assembly of Three-Dimensional Polyhedral Nanostructures

The self-assembly of 3D nanostructures is a promising technology for the fabrication of next generation nanodevices and the exploration of novel phenomena. However, the present techniques for assembly of 3D nanostructures are invisible and have to be done without physical contact, which bring great challenges in controlling the shapes with nanoscale precision. This situation leads to an extremely low yield of self-assembly, especially in 3D nanostructures built with metal and semiconductor materials. Here, an in situ self-assembly process using a focused ion beam (FIB) microscopy system has been demonstrated to realize 3D polyhedral nanostructures from 2D multiple pieces. An excited ion beam in the FIB microscopy system offers not only a visualization of the nanoscale self-assembly process but also the necessary energy for inducing the process. Because the beam energy that induces the self-assembly can be precisely adjusted while monitoring the status of the self-assembly, it is possible to control the self-assembly process with sub-10 nm scale precision, resulting in the realization of diverse 3D nanoarchitectures with a high yield. This approach will lead to state-of-the-art applications utilizing properties of 3D nanostructures in diverse fields.

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.

Shaping and compositional modification of zinc oxide nanowires under energetic manganese ion irradiation

For ZnO nanowires of 150 to 200 nm diameter standing on a flat substrate, the development of the surface contour/morphology and the local elemental composition under 175 keV Mn irradiation has been investigated both experimentally and by means of three-dimensional dynamic Monte Carlo computer simulation. The simulation results reveal a complex interplay of sputter erosion, implant incorporation, resputtering and atomic mixing, which is discussed in detail. The sputter-induced thinning of the wire is in good quantitative agreement with the experimental results obtained from pre- and post-irradiation scanning electron microscopy. The experiments also confirm the predicted sharpening of the tip, neck formation at the bottom interface, and ultimately the detachment of the nanowires from the substrate at high ion fluence. Additional good agreement with experimental results from nano-x-ray fluorescence is also obtained for the continuously increasing Mn/Zn atomic ratio within the nanowires as a function of ion fluence. The simulation yields a great deal of additional information that has not been accessible in the experiments. From this, preferential sputtering of O compared with Zn is deduced. A significant contamination of the wires with substrate material arises from ion mixing at the wire/substrate interface, rather than from redeposition of sputtered substrate atoms. Surprising hollow profiles are observed. Their formation is attributed to a special mechanism of collisional transport which is characteristic of the irradiation of nanowires at a suitable combination of wire diameter and ion energy.

Vertical silicon waveguide coupler bent by ion implantation

We propose and demonstrate that vertically curved waveguides (VCWs) enable vertical coupling between silicon wire waveguides and optical fibers with low wavelength dependence and polarization dependence for wide telecommunication wavelength band light. To bend these VCWs, we implanted silicon ions into silicon wire cantilevers from the vertical direction. The internal stress distribution that was induced by ion implantation drove the bending force, and we achieved vertical bending of the waveguides, with curvature radii ranging from 3 to 25 μm. At a radius of curvature of 6 μm, we obtained a coupling loss of 3 dB using a lens fiber.

Reconfiguring gratings of slanted plasmonic nanocolumns by ion beam irradiation

Gratings with slanted plasmonic nanocolumns of silver (Ag) on top fabricated by physical vapor deposition at large oblique angles on predefined gratings show unique plasmonic properties. These aligned nanocolumns with high-aspect ratios can be uniformly re-oriented to any desired angle of slant by ion beam irradiation. A focused ion beam (FIB) has been used as the ion source here. The plastic deformation of the nanocolumns arises due to defect formation caused by the energetic ions and can enable the complete tuning of the photonic and plasmonic properties of the grating through the slant angle. The reorientation can be uniformly carried over large areas of 0.2 mm(2) with the FIB and the diffraction patterns from the reoriented grating show large changes in the diffraction efficiencies. Electromagnetic simulations of the grating structures reveal large changes in the photonic properties with the slant angle such as diffraction efficiencies and the electromagnetic near fields.

Osteopontin (OPN) is an important protein to mediate improvements in the biocompatibility of C ion-implanted silicone rubber

Medical device implants are drawing increasing amounts of interest from modern medical practitioners. However, this attention is not evenly spread across all such devices; most of these implantable devices can cause adverse reactions such as inflammation, fibrosis, thrombosis, and infection. In this work, the biocompatibility of silicone rubber (SR) was improved through carbon (C) ion implantation. Scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD) results confirmed that these newly generated carbon-implanted silicone rubbers (C-SRs) had large, irregular peaks and deep valleys on their surfaces. The water contact angle of the SR surface decreased significantly after C ion implantation. C ion implantation also changed the surface charge distribution, silicone oxygen rate, and chemical-element distribution of SR to favor cell attachment. The dermal fibroblasts cultured on the surface C-SR grew faster and showed more typical fibroblastic shapes. The expression levels of major adhesion proteins, including talin-1, zyxin, and vinculin, were significantly higher in dermal fibroblasts cultured on C-SR coated plates than in dermal fibroblasts cultured on SR. Those same dermal fibroblasts on C-SRs showed more pronounced adhesion and migration abilities. Osteopontin (OPN), a critical extracellular matrix (ECM) protein, was up-regulated and secreted from dermal fibroblasts cultured on C-SR. Matrix metalloproteinase-9 (MMP-9) activity was also increased. These cells were highly mobile and were able to adhere to surfaces, but these abilities were inhibited by the monoclonal antibody against OPN, or by shRNA-mediated MMP-9 knockdown. Together, these results suggest that C ion implantation significantly improves SR biocompatibility, and that OPN is important to promote cell adhesion to the C-SR surface.

The ion implantation-induced properties of one-dimensional nanomaterials

Nowadays, ion implantation is an extensively used technique for material modification. Using this method, we can tailor the properties of target materials, including morphological, mechanical, electronic, and optical properties. All of these modifications impel nanomaterials to be a more useful application to fabricate more high-performance nanomaterial-based devices. Ion implantation is an accurate and controlled doping method for one-dimensional nanomaterials. In this article, we review recent research on ion implantation-induced effects in one-dimensional nanostructure, such as nanowires, nanotubes, and nanobelts. In addition, the optical property of single cadmium sulfide nanobelt implanted by N+ ions has been researched.

Controllable p-n switching behaviors of GaAs nanowires via an interface effect

Due to the extraordinary large surface-to-volume ratio, surface effects on semiconductor nanowires have been extensively investigated in recent years for various technological applications. Here, we present a facile interface trapping approach to alter electronic transport properties of GaAs nanowires as a function of diameter utilizing the acceptor-like defect states located between the intrinsic nanowire and its amorphous native oxide shell. Using a nanowire field-effect transistor (FET) device structure, p- to n-channel switching behaviors have been achieved with increasing NW diameters. Interestingly, this oxide interface is shown to induce a space-charge layer penetrating deep into the thin nanowire to deplete all electrons, leading to inversion and thus p-type conduction as compared to the thick and intrinsically n-type GaAs NWs. More generally, all of these might also be applicable to other nanowire material systems with similar interface trapping effects; therefore, careful device design considerations are required for achieving the optimal nanowire device performances.

Ion-induced surface relaxation: controlled bending and alignment of nanowire arrays

It is a well-known fact that a sphere offers less surface area, and thus less surface energy, than any other arrangement of the same volume. From this perspective, all other shapes are metastable objects. In this paper, we present and discuss a manifestation of this metastability: the spontaneous alignment of free-standing amorphous nanowires towards, and ultimately parallel to, a flux of directional ion irradiation. The behavior expected from surface energy reduction is the opposite of that predicted by both theory and experiment regarding defect generation in crystalline nanowires, but is consistent with other observations on non-crystalline materials. We verify our expectations by bending and aligning finely stranded amorphous silica nanowires, noting that such nanostructures are particularly susceptible to bending through ion-induced surface energy reduction. We offer support for this mechanism through bending rate studies, thermal annealing experiments and mathematical modeling. Experimentally, we also demonstrate selective reorientation of nanowires in patterned areas, as well as conformal coating of reoriented arrays with functional materials. These capabilities offer the prospect of exploiting engineered surface anisotropies in optical, fluidic and micromechanical applications.

Felling of individual freestanding nanoobjects using focused-ion-beam milling for investigations of structural and transport properties

We report that, to enable studies of their compositional, structural and electrical properties, freestanding individual nanoobjects can be selectively felled in a controllable way by the technique of low-current focused-ion-beam (FIB) milling with the ion beam at a chosen angle of incidence to the nanoobject. To demonstrate the suitability of the technique, we report results for zigzag/straight tungsten nanowires grown vertically on support substrates and then felled for characterization. We also describe a systematic investigation of the effect of the experimental geometry and parameters on the felling process and on the induced wire-bending phenomenon. The method of felling freestanding nanoobjects using FIB is an advantageous new technique enabling investigations of the properties of selected individual nanoobjects.

Repeatable switching of the bending direction of ZnO nanoneedles by ion beams

We studied the ion beam bending of ZnO nanoneedles to find the dependence of their bending direction on the ion beam energy and to clarify the bending mechanism. Through gallium focused ion beam (FIB) bending, the stems of the nanoneedles were found to be bent to the direction of the ion beam source for ion beam energies of 30 keV whereas they were bent in the opposite direction at ion energies lower than 20 keV. We found for the first time that the bending direction of ZnO nanoneedles could be changed by repeated switching of the ion beam energy between lower and higher energy levels, and that the thin tip parts of the nanoneedles were bent toward to the ion beam source like the higher energy bending mode during the process of lower energy bending below 20 keV. Through high resolution transmission electron microscopy (HRTEM) observations of the microstructure of a nanoneedle, bent by 30 keV higher energy ion beams, based on the atomic scale, we found that more edge dislocations were created in the rear side, deeper than the central plane of the nanoneedle, than the front side and that each edge dislocation added an extra lattice plane in this region. These observations clearly showed that the bent nanoneedles were plastically deformed by the edge dislocations created by the ion beams.

Electron- and ion-beam-induced maneuvering of nanostructures: phenomenon and applications

Electron-and ion-induced bending (EIB/IIB) phenomena have been studied in self-supported polycrystalline metallic and metal-amorphous bilayered nanocantilevers. The experiments reveal many interesting facts regarding electron/ion-matter interaction, which builds a proper foundation for the understanding of the phenomenon. The mechanism for bending of metallic cantilevers has been proposed to be primarily due to void-induced stress generation during ion beam irradiation. On the other hand, thermal effects have been found to play the dominant role in the case of bending of bilayer (amorphous-metal) nanocantilevers. The instantaneous, reversible, highly controllable and permanent nature of the process has been exploited to fabricate several complicated nanostructures in three dimensions. IIB of the fabricated cantilevers is shown to have a high precession mass sensing aptitude, capable of detecting a change in mass of the order of femtograms.

Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures

Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga(2)O(3) and GeO(2) structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the (5)D(0)-(7)F(2) Eu(3+) intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga(2)O(3), which is assigned to the lattice recovery. Gd(3+) as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd(3+) is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd(3+) (6)P(7/2)-(8)S(7/2) intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

Permanent bending and alignment of ZnO nanowires

Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated ZnO nanowires with energetic ions, achieving bending and alignment in different directions. Not only the bending of single nanowires is studied in detail, but also the simultaneous alignment of large ensembles of ZnO nanowires. Computer simulations reveal how the bending is initiated by ion beam induced damage. Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures.

μ-EXAFS, μ-XRF, and μ-PL characterization of a multi-quantum-well electroabsorption modulated laser realized via selective area growth

In the past few years, strong efforts have been devoted to improving the frequency of optical-fiber communications. In particular, the use of a special kind of integrated optoelectronic device called an electroabsorption modulated laser (EML) allows communication at 10 Gb s(-1) or higher over long propagation spans (up to 80 km). Such devices are realized using the selective area growth (SAG) technique and are based on a multiple quantum well (MQW) distributed-feedback laser (DFB) monolithically integrated with a MQW electroabsorption modulator (EAM). Since the variation in the chemical composition between these two structures takes place on the micrometer scale, in order to study the spatial variation of the relevant parameters of the MQW EML structures, the X-ray microbeam available at the ESRF ID22 beamline is used. The effectiveness of the SAG technique in modulating the chemical composition of the quaternary alloy is proven by a micrometer-resolved X-ray fluorescence (μ-XRF) map. Here, reported micrometer-resolved extended X-ray absorption fine structure (μ-EXAFS) spectra represent the state of the art of μ-EXAFS achievable at third-generation synchrotron radiation sources. The results are in qualitative agreement with X-ray diffraction (XRD) and micrometer-resolved photoluminescence (μ-PL) data, but a technical improvement is still crucial in order to make μ-EXAFS really quantitative on such complex heterostructures.