1
|
Meng L, Xu Q, Zhang J, Wang X. Colloidal quantum dot materials for next-generation near-infrared optoelectronics. Chem Commun (Camb) 2024; 60:1072-1088. [PMID: 38174780 DOI: 10.1039/d3cc04315k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Colloidal quantum dots (CQDs) are a promising class of materials for next-generation optoelectronic devices, such as displays, LEDs, lasers, photodetectors, and solar cells. CQDs can be obtained at low cost and in large quantities using wet chemistry. CQDs have also been produced using various materials, such as CdSe, InP, perovskites, PbS, PbSe, and InAs. Some of these CQD materials absorb and emit photons in the visible region, making them excellent candidates for displays and LEDs, while others interact with low-energy photons in the near-infrared (NIR) region and are intensively utilized in NIR lasers, NIR photodetectors, and solar cells. In this review, we have focused on NIR CQD materials and reviewed the development of CQD materials for solar cells, NIR lasers, and NIR photodetectors since the first set of reports on CQD materials in these particular applications.
Collapse
Affiliation(s)
- Lingju Meng
- Department of Applied Physics, Aalto University, Espoo, Finland
- Department of Chemistry and Materials Science, Micronova Nanofabrication Centre, Aalto University, Espoo, Finland
| | - Qiwei Xu
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Canada.
| | - Jiangwen Zhang
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Canada.
| | - Xihua Wang
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Canada.
| |
Collapse
|
2
|
Wang Y, Hu H, Yuan M, Xia H, Zhang X, Liu J, Yang J, Xu S, Shi Z, He J, Zhang J, Gao L, Tang J, Lan X. Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58573-58582. [PMID: 38059485 DOI: 10.1021/acsami.3c12918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Lead sulfide (PbS) colloidal quantum dots (CQDs) for photodetectors (PDs) have garnered great attention due to their potential use as low-cost, high-performance, and large-area infrared focal plane arrays. The prevailing device architecture employed for PbS CQD PDs is the p-i-n structure, where PbS CQD films treated with thiol molecules, such as 1,2-ethanedithiol (EDT), are widely used as p-type layers due to their favorable band alignment. However, PbS-EDT films face a critical challenge associated with low film quality, resulting in many defects that curtail the device performance. Herein, a controlled oxidization process is developed for better surface passivation of the PbS-EDT transport layer. The dark current density (Jd) of PbS CQD PDs based on optimized PbS-EDT layer shows a dramatic decrease by nearly 2 orders of magnitude. The increase of carrier lifetime and suppression of carrier recombination via controlled oxidation in PbS-EDT CQDs were confirmed by transient absorption spectra and electrochemical impedance spectra. The device based on the optimized PbS-EDT hole transport layer (HTL) exhibits a specific detectivity (D*) that is 3.4 times higher compared to the control device. Finally, the CQD PD employing oxidization PbS-EDT CQDs is integrated with a thin film transistor (TFT) readout circuit, which successfully accomplishes material discrimination imaging, material occlusion imaging, and smoke penetration imaging. The controlled oxidization strategy verifies the significance of surface management of CQD solids and is expected to help advance infrared optoelectronic applications based on CQDs.
Collapse
Affiliation(s)
- Ya Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Mohan Yuan
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Hang Xia
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Xingchen Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Jing Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Shaoqiu Xu
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Zhaorong Shi
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430205, People's Republic of China
| | - Jianbing Zhang
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Liang Gao
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Jiang Tang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Xinzheng Lan
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| |
Collapse
|
3
|
Gong W, Wang P, Li J, Li J, Zhang Y. Elucidating the Gain Mechanism in PbS Colloidal Quantum Dot Visible-Near-Infrared Photodiodes. J Phys Chem Lett 2022; 13:8327-8335. [PMID: 36040422 DOI: 10.1021/acs.jpclett.2c02034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The responsivities of colloidal quantum dot (CQD) photodiodes are not satisfactory (∼0.3 A W-1) due to the lack of gain. Here, visible-near-infrared PbS CQD photodiodes with a peak responsivity of ∼1 A W-1 and external quantum efficiencies larger than 100% are demonstrated. The gain is realized by electron tunneling injection through the Schottky junction (PbS-EDT/Au) with barrier height reduced to 0.27 eV, originating from the capture of photogenerated holes at the negatively charged acceptor traps generated in the oxidized hole-transport layer PbS-EDT. The resulting device exhibits a peak detectivity of ∼8 × 1011 jones at -1 V. Additionally, the response speed (400 μs) is not sacrificed by the trap states because of the dominated faster electron drift motion in the fully depleted device. Our results provide an accurate elucidation of the gain mechanism in CQD photodiodes and promise them great potential in weak light detection.
Collapse
Affiliation(s)
- Wei Gong
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Peng Wang
- Faculty of Information Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Jingjie Li
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Jingzhen Li
- Faculty of Information Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Yongzhe Zhang
- Faculty of Information Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| |
Collapse
|
4
|
Xu K, Zhou W, Ning Z. Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003397. [PMID: 33140560 DOI: 10.1002/smll.202003397] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Revised: 07/30/2020] [Indexed: 06/11/2023]
Abstract
Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing, size-tunable optoelectronic properties, and flexibility. Tremendous efforts including material engineering and device structure manipulation have been made to improve the performance of the photodetectors based on CQDs. In recent years, benefiting from the facial integration with materials such as 2D structure, perovskite and silicon, as well as device engineering, the performance of CQD IR photodetectors have been developing rapidly. On the other hand, to prompt the application of CQD IR photodetectors, scalable device structures that are compatible with commercial systems are developed. Herein, recent advances of CQD based IR photodetectors are summarized, especially material integration, device engineering, and scalable device structures.
Collapse
Affiliation(s)
- Kaimin Xu
- School of Physics Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wenjia Zhou
- School of Physics Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Zhijun Ning
- School of Physics Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| |
Collapse
|
5
|
Liu X, Kongsuwan N, Li X, Zhao D, Wu Z, Hess O, Zhang X. Tailoring the Third-Order Nonlinear Optical Property of a Hybrid Semiconductor Quantum Dot-Metal Nanoparticle: From Saturable to Fano-Enhanced Absorption. J Phys Chem Lett 2019; 10:7594-7602. [PMID: 31769991 DOI: 10.1021/acs.jpclett.9b02627] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Semiconductor-metal hybrid nanostructures present an exotic class of nonlinear optical materials due to their potential optoelectronic applications. However, most studies to date focus on their total optical responses instead of contributions from individual nonlinear orders. In this Letter, we present a theoretical study on the third-order nonlinear optical absorption of a hybrid colloidal semiconductor quantum dot (SQD)-metal nanoparticle (MNP) system. We develop a novel analytic treatment based on the nonlinear density matrix equation and derive a closed-form expression for the optical susceptibility. Our study identifies the parameter space that governs the system's optical transition from being a saturable absorber to a Fano-enhanced absorber. We attribute this transition to the plasmon-mediated self-interaction of the SQD. The findings provide a valuable guideline for optimized designs of functional nanophotonic devices based on SQD-MNP hybrid structures.
Collapse
Affiliation(s)
- Xiaona Liu
- School of Physical Science and Technology , Southwest University , Chongqing 400715 , P. R. China
- State Key Laboratory of Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- The Blackett Laboratory , Imperial College London , Prince Consort Road , London SW7 2AZ , United Kingdom
| | - Nuttawut Kongsuwan
- The Blackett Laboratory , Imperial College London , Prince Consort Road , London SW7 2AZ , United Kingdom
| | - Xiaoguang Li
- Institute for Advanced Study , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Dongxing Zhao
- School of Physical Science and Technology , Southwest University , Chongqing 400715 , P. R. China
| | - Zhengmao Wu
- School of Physical Science and Technology , Southwest University , Chongqing 400715 , P. R. China
| | - Ortwin Hess
- The Blackett Laboratory , Imperial College London , Prince Consort Road , London SW7 2AZ , United Kingdom
| | - Xinhui Zhang
- State Key Laboratory of Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , P. R. China
| |
Collapse
|
6
|
Ren Z, Sun J, Li H, Mao P, Wei Y, Zhong X, Hu J, Yang S, Wang J. Bilayer PbS Quantum Dots for High-Performance Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017. [PMID: 28639380 DOI: 10.1002/adma.201702055] [Citation(s) in RCA: 67] [Impact Index Per Article: 9.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Due to their wide tunable bandgaps, high absorption coefficients, easy solution processabilities, and high stabilities in air, lead sulfide (PbS) quantum dots (QDs) are increasingly regarded as promising material candidates for next-generation light, low-cost, and flexible photodetectors. Current single-layer PbS-QD photodetectors suffer from shortcomings of large dark currents, low on-off ratios, and slow light responses. Integration with metal nanoparticles, organics, and high-conducting graphene/nanotube to form hybrid PbS-QD devices are proved capable of enhancing photoresponsivity; but these approaches always bring in other problems that can severely hamper the improvement of the overall device performance. To overcome the hurdles current single-layer and hybrid PbS-QD photodetectors face, here a bilayer QD-only device is designed, which can be integrated on flexible polyimide substrate and significantly outperforms the conventional single-layer devices in response speed, detectivity, linear dynamic range, and signal-to-noise ratio, along with comparable responsivity. The results which are obtained here should be of great values in studying and designing advanced QD-based photodetectors for applications in future flexible optoelectronics.
Collapse
Affiliation(s)
- Zhenwei Ren
- College of Materials and Energy, South China Agricultural University, Guangzhou, 510642, China
- Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiankun Sun
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hui Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Peng Mao
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yuanzhi Wei
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xinhua Zhong
- College of Materials and Energy, South China Agricultural University, Guangzhou, 510642, China
- Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Jinsong Hu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shiyong Yang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jizheng Wang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
7
|
Huang D, Freeley M, Palma M. DNA-Mediated Patterning of Single Quantum Dot Nanoarrays: A Reusable Platform for Single-Molecule Control. Sci Rep 2017; 7:45591. [PMID: 28349982 PMCID: PMC5368656 DOI: 10.1038/srep45591] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2017] [Accepted: 02/28/2017] [Indexed: 12/29/2022] Open
Abstract
We present a facile strategy of general applicability for the assembly of individual nanoscale moieties in array configurations with single-molecule control. Combining the programming ability of DNA as a scaffolding material with a one-step lithographic process, we demonstrate the patterning of single quantum dots (QDs) at predefined locations on silicon and transparent glass surfaces: as proof of concept, clusters of either one, two, or three QDs were assembled in highly uniform arrays with a 60 nm interdot spacing within each cluster. Notably, the platform developed is reusable after a simple cleaning process and can be designed to exhibit different geometrical arrangements.
Collapse
Affiliation(s)
- Da Huang
- School of Biological and Chemical Sciences, Materials Research Institute, and Institute of Bioengineering, Queen Mary University of London, Mile End Road, London E1 4NS, UK
| | - Mark Freeley
- School of Biological and Chemical Sciences, Materials Research Institute, and Institute of Bioengineering, Queen Mary University of London, Mile End Road, London E1 4NS, UK
| | - Matteo Palma
- School of Biological and Chemical Sciences, Materials Research Institute, and Institute of Bioengineering, Queen Mary University of London, Mile End Road, London E1 4NS, UK
| |
Collapse
|
8
|
De Iacovo A, Venettacci C, Colace L, Scopa L, Foglia S. PbS Colloidal Quantum Dot Photodetectors operating in the near infrared. Sci Rep 2016; 6:37913. [PMID: 27885269 PMCID: PMC5122850 DOI: 10.1038/srep37913] [Citation(s) in RCA: 91] [Impact Index Per Article: 11.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2016] [Accepted: 11/03/2016] [Indexed: 11/09/2022] Open
Abstract
Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors. In order to make devices suitable for the monolithic integration with silicon electronics, we propose a simple and low cost process for the fabrication of photodetectors and investigate their operation at very low voltage bias. Our photoconductors feature high responsivity and detectivity at 1.3 μm and 1 V bias with maximum values of 30 A/W and 2·1010 cmHz1/2W−1, respectively. Detectivity close to 1011 cmHz1/2W−1 has been obtained resorting to bridge sensor readout.
Collapse
Affiliation(s)
- Andrea De Iacovo
- NOOEL-Nonlinear Optics and OptoElectronics Lab, Dept. of Engineering, University Roma Tre, 00146, Rome, Italy
| | - Carlo Venettacci
- NOOEL-Nonlinear Optics and OptoElectronics Lab, Dept. of Engineering, University Roma Tre, 00146, Rome, Italy
| | - Lorenzo Colace
- NOOEL-Nonlinear Optics and OptoElectronics Lab, Dept. of Engineering, University Roma Tre, 00146, Rome, Italy
| | - Leonardo Scopa
- CNR, Istituto dei Materiali per l'Elettronica ed il Magnetismo, Rome, Italy
| | - Sabrina Foglia
- CNR, Istituto dei Materiali per l'Elettronica ed il Magnetismo, Rome, Italy
| |
Collapse
|
9
|
Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors. Sci Rep 2016; 6:24909. [PMID: 27143413 PMCID: PMC4855231 DOI: 10.1038/srep24909] [Citation(s) in RCA: 45] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2016] [Accepted: 04/06/2016] [Indexed: 11/09/2022] Open
Abstract
Two dimensional layered (i.e. van der Waals) heterostructures open up great prospects, especially in photodetector applications. In this context, the control of the charge transfer between the constituting layers is of crucial importance. Compared to bulk or 0D system, 2D materials are characterized by a large exciton binding energy (0.1–1 eV) which considerably affects the magnitude of the charge transfer. Here we investigate a model system made from colloidal 2D CdSe nanoplatelets and epitaxial graphene in a phototransistor configuration. We demonstrate that using a heterostructured layered material, we can tune the magnitude and the direction (i.e. electron or hole) of the charge transfer. We further evidence that graphene functionalization by nanocrystals only leads to a limited change in the magnitude of the 1/f noise. These results draw some new directions to design van der Waals heterostructures with enhanced optoelectronic properties.
Collapse
|
10
|
Ibáñez M, Luo Z, Genç A, Piveteau L, Ortega S, Cadavid D, Dobrozhan O, Liu Y, Nachtegaal M, Zebarjadi M, Arbiol J, Kovalenko MV, Cabot A. High-performance thermoelectric nanocomposites from nanocrystal building blocks. Nat Commun 2016; 7:10766. [PMID: 26948987 PMCID: PMC4786643 DOI: 10.1038/ncomms10766] [Citation(s) in RCA: 93] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2015] [Accepted: 01/19/2016] [Indexed: 12/22/2022] Open
Abstract
The efficient conversion between thermal and electrical energy by means of durable, silent and scalable solid-state thermoelectric devices has been a long standing goal. While nanocrystalline materials have already led to substantially higher thermoelectric efficiencies, further improvements are expected to arise from precise chemical engineering of nanoscale building blocks and interfaces. Here we present a simple and versatile bottom–up strategy based on the assembly of colloidal nanocrystals to produce consolidated yet nanostructured thermoelectric materials. In the case study on the PbS–Ag system, Ag nanodomains not only contribute to block phonon propagation, but also provide electrons to the PbS host semiconductor and reduce the PbS intergrain energy barriers for charge transport. Thus, PbS–Ag nanocomposites exhibit reduced thermal conductivities and higher charge carrier concentrations and mobilities than PbS nanomaterial. Such improvements of the material transport properties provide thermoelectric figures of merit up to 1.7 at 850 K. Nanomaterials provide a route to efficient solid-state conversion between thermal and electrical energy. Here, the authors demonstrate that a combination of metal and semiconductor colloidal nanocrystals can produce thermoelectric nanocomposites with high performance.
Collapse
Affiliation(s)
- Maria Ibáñez
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland.,Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland.,Advanced Materials Department, Catalonia Energy Research Institute - IREC, Sant Adria de Besos, Jardins de les Dones de Negre n.1, Pl. 2, 08930 Barcelona, Spain
| | - Zhishan Luo
- Advanced Materials Department, Catalonia Energy Research Institute - IREC, Sant Adria de Besos, Jardins de les Dones de Negre n.1, Pl. 2, 08930 Barcelona, Spain
| | - Aziz Genç
- Department of Advanced Electron Nanoscopy, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Laura Piveteau
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland.,Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Silvia Ortega
- Advanced Materials Department, Catalonia Energy Research Institute - IREC, Sant Adria de Besos, Jardins de les Dones de Negre n.1, Pl. 2, 08930 Barcelona, Spain
| | - Doris Cadavid
- Advanced Materials Department, Catalonia Energy Research Institute - IREC, Sant Adria de Besos, Jardins de les Dones de Negre n.1, Pl. 2, 08930 Barcelona, Spain
| | - Oleksandr Dobrozhan
- Advanced Materials Department, Catalonia Energy Research Institute - IREC, Sant Adria de Besos, Jardins de les Dones de Negre n.1, Pl. 2, 08930 Barcelona, Spain
| | - Yu Liu
- Advanced Materials Department, Catalonia Energy Research Institute - IREC, Sant Adria de Besos, Jardins de les Dones de Negre n.1, Pl. 2, 08930 Barcelona, Spain
| | | | - Mona Zebarjadi
- Department of Mechanical and Aerospace Engineering, Rutgers University, 98 Brett Rd, Piscataway, New Jersey 08854-8058, USA
| | - Jordi Arbiol
- Department of Advanced Electron Nanoscopy, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.,Institució Catalana de Recerca i Estudis Avançats, ICREA, Passeig de Lluís Companys, 23 08010 Barcelona, Spain
| | - Maksym V Kovalenko
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland.,Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Andreu Cabot
- Advanced Materials Department, Catalonia Energy Research Institute - IREC, Sant Adria de Besos, Jardins de les Dones de Negre n.1, Pl. 2, 08930 Barcelona, Spain.,Institució Catalana de Recerca i Estudis Avançats, ICREA, Passeig de Lluís Companys, 23 08010 Barcelona, Spain
| |
Collapse
|
11
|
Stavrinadis A, Konstantatos G. Strategies for the Controlled Electronic Doping of Colloidal Quantum Dot Solids. Chemphyschem 2016; 17:632-44. [DOI: 10.1002/cphc.201500834] [Citation(s) in RCA: 44] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2015] [Indexed: 11/11/2022]
Affiliation(s)
- Alexandros Stavrinadis
- ICFO-Institut de Ciencies Fotoniques; The Barcelona Institute of Science and Technology; 08860 Castelldefels Barcelona Spain
| | - Gerasimos Konstantatos
- ICFO-Institut de Ciencies Fotoniques; The Barcelona Institute of Science and Technology; 08860 Castelldefels Barcelona Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010; Barcelona Spain
| |
Collapse
|
12
|
Maulu A, Rodríguez-Cantó PJ, Navarro-Arenas J, Abargues R, Sánchez-Royo JF, García-Calzada R, Martínez Pastor JP. Strongly-coupled PbS QD solids by doctor blading for IR photodetection. RSC Adv 2016. [DOI: 10.1039/c6ra14782h] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
In this work, doctor blading is proposed for the fabrication of strongly-coupled QD solids from a PbS nanoink for photodetection at telecom wavelengths.
Collapse
Affiliation(s)
- Alberto Maulu
- Instituto de Ciencia de los Materiales
- Universidad de Valencia
- 46071 Valencia
- Spain
| | | | - Juan Navarro-Arenas
- Instituto de Ciencia de los Materiales
- Universidad de Valencia
- 46071 Valencia
- Spain
| | | | - Juan F. Sánchez-Royo
- Instituto de Ciencia de los Materiales
- Universidad de Valencia
- 46071 Valencia
- Spain
| | - Raúl García-Calzada
- Instituto de Ciencia de los Materiales
- Universidad de Valencia
- 46071 Valencia
- Spain
| | | |
Collapse
|