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Zhang Q, Li M, Li L, Geng D, Chen W, Hu W. Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions. Chem Soc Rev 2024; 53:3096-3133. [PMID: 38373059 DOI: 10.1039/d3cs00821e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.
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Affiliation(s)
- Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Menghan Li
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wei Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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Cao X, Lei Z, Huang B, Wei A, Tao L, Yang Y, Zheng Z, Feng X, Li J, Zhao Y. Non-Layered Te/In 2 S 3 Tunneling Heterojunctions with Ultrahigh Photoresponsivity and Fast Photoresponse. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200445. [PMID: 35373465 DOI: 10.1002/smll.202200445] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 03/09/2022] [Indexed: 06/14/2023]
Abstract
A photodetector based on 2D non-layered materials can easily utilize the photogating effect to achieve considerable photogain, but at the cost of response speed. Here, a rationally designed tunneling heterojunction fabricated by vertical stacking of non-layered In2 S3 and Te flakes is studied systematically. The Te/In2 S3 heterojunctions possess type-II band alignment and can transfer to type-I or type-III depending on the electric field applied, allowing for tunable tunneling of the photoinduced carriers. The Te/In2 S3 tunneling heterojunction exhibits a reverse rectification ratio exceeding 104 , an ultralow forward current of 10-12 A, and a current on/off ratio over 105 . A photodetector based on the heterojunctions shows an ultrahigh photoresponsivity of 146 A W-1 in the visible range. Furthermore, the devices exhibit a response time of 5 ms, which is two and four orders of magnitude faster than that of its constituent In2 S3 and Te. The simultaneously improved photocurrent and response speed are attributed to the direct tunneling of the photoinduced carriers, as well as a combined mechanism of photoconductive and photogating effects. In addition, the photodetector exhibits a clear photovoltaic effect, which can work in a self-powered mode.
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Affiliation(s)
- Xuanhao Cao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Zehong Lei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Baoquan Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Aixiang Wei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Lili Tao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Yibin Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Xing Feng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China
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van der Lee A, Polentarutti M, Roche GH, Dautel OJ, Wantz G, Castet F, Muccioli L. Temperature-Dependent Structural Phase Transition in Rubrene Single Crystals: The Missing Piece from the Charge Mobility Puzzle? J Phys Chem Lett 2022; 13:406-411. [PMID: 34986305 DOI: 10.1021/acs.jpclett.1c03221] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Accurate structural models for rubrene, the benchmark organic semiconductor, derived from synchrotron X-ray data in the temperature range of 100-300 K, show that its cofacially stacked tetracene backbone units remain blocked with respect to each other upon cooling to 200 K and start to slip below that temperature. The release of the blocked slippage occurs at approximately the same temperature as the hole mobility crossover. The blocking between 200 and 300 K is caused by a negative correlation between the relatively small thermal expansion along the crystallographic b-axis and the relatively large widening of the angle between herringbone-stacked tetracene units. DFT calculations reveal that this blocked slippage is accompanied by a discontinuity in the variation with temperature of the electronic couplings associated with hole transport between cofacially stacked tetracene backbones.
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Affiliation(s)
- Arie van der Lee
- IEM, Université de Montpellier, CNRS, ENSCM, 34095 Montpellier, France
| | - Maurizio Polentarutti
- Elettra, Sincrotrone Trieste S.C.p.A., Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza, 34149 Trieste, Italy
| | - Gilles H Roche
- ICGM, Université de Montpellier, CNRS, ENSCM, 34293 Montpellier, France
- Université de Bordeaux, IMS, CNRS, UMR 5218, Bordeaux INP, ENSCBP, 33405 Talence, France
| | - Olivier J Dautel
- ICGM, Université de Montpellier, CNRS, ENSCM, 34293 Montpellier, France
| | - Guillaume Wantz
- Université de Bordeaux, IMS, CNRS, UMR 5218, Bordeaux INP, ENSCBP, 33405 Talence, France
| | - Frédéric Castet
- Université de Bordeaux, Institut des Sciences Moléculaires (UMR5255 CNRS), 351 cours de la Libération, F-33405 Talence, France
| | - Luca Muccioli
- Department of Industrial Chemistry, University of Bologna, 40136 Bologna, Italy
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Abstract
2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.
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Affiliation(s)
- Fakun K. Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Sijie J. Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Y. Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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Jiang X, Lu J, Xue D, Wei Y, Zhang Y, Zhang J, Wang Z, Huang L, Chi L. High performance near-infrared phototransistors via enhanced electron trapping effect. Chem Commun (Camb) 2021; 57:12123-12126. [PMID: 34719696 DOI: 10.1039/d1cc04828g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A high performance near-infrared organic phototransistor is achieved via introducing a small molecule acceptor as an electron trapping site into the narrow-bandgap conjugated polymer films. With only 10% (wt) addition of the acceptor molecule, the photoresponse to light of 850 nm has been significantly improved with a best photoresponsivity up to 2000 A W-1, high detectivity of 1016 Jones and fairly good photosensitivity in the order of 106.
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Affiliation(s)
- Xingyu Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Jie Lu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Di Xue
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Yujia Wei
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Yadan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Jidong Zhang
- Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
| | - Zi Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
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Tao L, Yao B, Yue Q, Dan Z, Wen P, Yang M, Zheng Z, Luo D, Fan W, Wang X, Gao W. Vertically stacked Bi 2Se 3/MoTe 2 heterostructure with large band offsets for nanoelectronics. NANOSCALE 2021; 13:15403-15414. [PMID: 34499063 DOI: 10.1039/d1nr04281e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In recent years, two-dimensional material-based tunneling heterojunctions are emerging as a multi-functional architecture for logic circuits and photodetection owing to the flexible stacking, optical sensitivity, tunable detection band, and highly controllable conductivity behaviors. However, the existing structures are mainly focused on transition or post-transition metal chalcogenides and have been rarely investigated as topological insulator (such as Bi2Se3 or Bi2Te3)-based tunneling heterostructures. Meanwhile, it is challenging to mechanically exfoliate the topological insulator thin nanoflakes because of the strong layer-by-layer interaction with shorter interlayer spacing. Herein, we report Au-assisted exfoliation and non-destructive transfer method to fabricate large-scale Bi2Se3 thin nanosheets. Furthermore, a novel broken-gap tunneling heterostructure is designed by combing 2H-MoTe2 and Bi2Se3via the dry-transfer method. Thanks to the realized band alignment, this ambipolar-n device shows a clear rectifying behavior at Vds of 1 V. A built-in potential exceeding ∼0.7 eV is verified owing to the large band offsets by comparing the numerical solution of Poisson's equation and the experimental data. Carrier transport is governed by the majority carrier including thermionic emission and the tunneling process through the barrier height. At last, the device shows an ultralow dark current of ∼0.2 pA and a superior optoelectrical performance of Ilight/Idark ratio ≈106, a fast response time of 21 ms, and a specific detectivity of 7.2 × 1011 Jones for a visible light of 405 nm under zero-bias. Our work demonstrates a new universal method to fabricate a topological insulator and paves a new strategy for the construction of novel van der Waals tunneling structures.
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Affiliation(s)
- Lin Tao
- State Key Lab of Superhard Material, and College of Physics, Jilin University, Changchun 130012, P. R. China.
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Bin Yao
- State Key Lab of Superhard Material, and College of Physics, Jilin University, Changchun 130012, P. R. China.
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Qian Yue
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Zhiying Dan
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Mengmeng Yang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Weijun Fan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Xiaozhou Wang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
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7
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Zhao M, Yang S, Zhang K, Zhang L, Chen P, Yang S, Zhao Y, Ding X, Zu X, Li Y, Zhao Y, Qiao L, Zhai T. A Universal Atomic Substitution Conversion Strategy Towards Synthesis of Large-Size Ultrathin Nonlayered Two-Dimensional Materials. NANO-MICRO LETTERS 2021; 13:165. [PMID: 34351515 PMCID: PMC8342677 DOI: 10.1007/s40820-021-00692-6] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/18/2021] [Accepted: 06/24/2021] [Indexed: 06/13/2023]
Abstract
Nonlayered two-dimensional (2D) materials have attracted increasing attention, due to novel physical properties, unique surface structure, and high compatibility with microfabrication technique. However, owing to the inherent strong covalent bonds, the direct synthesis of 2D planar structure from nonlayered materials, especially for the realization of large-size ultrathin 2D nonlayered materials, is still a huge challenge. Here, a general atomic substitution conversion strategy is proposed to synthesize large-size, ultrathin nonlayered 2D materials. Taking nonlayered CdS as a typical example, large-size ultrathin nonlayered CdS single-crystalline flakes are successfully achieved via a facile low-temperature chemical sulfurization method, where pre-grown layered CdI2 flakes are employed as the precursor via a simple hot plate assisted vertical vapor deposition method. The size and thickness of CdS flakes can be controlled by the CdI2 precursor. The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI2 and CdS, which has been evidenced by experiments and theoretical calculations. The atomic substitution conversion strategy demonstrates that the existing 2D layered materials can serve as the precursor for difficult-to-synthesize nonlayered 2D materials, providing a bridge between layered and nonlayered materials, meanwhile realizing the fabrication of large-size ultrathin nonlayered 2D materials.
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Affiliation(s)
- Mei Zhao
- School of Physics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, People's Republic of China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, People's Republic of China
| | - Kenan Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, People's Republic of China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, People's Republic of China
| | - Ping Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, People's Republic of China
| | - Sanjun Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, People's Republic of China
| | - Yang Zhao
- School of Physics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
| | - Xiang Ding
- School of Physics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
| | - Xiaotao Zu
- School of Physics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, People's Republic of China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, People's Republic of China
| | - Liang Qiao
- School of Physics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, People's Republic of China.
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Su J, Liu G, Liu L, Chen J, Hu X, Li Y, Li H, Zhai T. Recent Advances in 2D Group VB Transition Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005411. [PMID: 33694286 DOI: 10.1002/smll.202005411] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2020] [Revised: 10/25/2020] [Indexed: 06/12/2023]
Abstract
2D materials have received considerable research interest owing to their abundant material systems and remarkable properties. Among them, 2D group VB transition metal chalcogenides (GVTMCs) stand out as emerging 2D metallic materials and significantly broaden the research scope of 2D materials. 2D GVTMCs have great advantages in electrical transport, 2D magnetism, charge density wave, sensing, catalysis, and charge storage, making them attractive in the fields of functional devices and energy chemistry. In this review, the recent progress of 2D GVTMCs is summarized systematically from fundamental properties, growth methodologies to potential applications. The challenges and prospects are also discussed for future research in this field.
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Affiliation(s)
- Jianwei Su
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Guiheng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Jiazhen Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xiaozong Hu
- Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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