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Chiu A, Lu C, Kachman DE, Rong E, Chintapalli SM, Lin Y, Khurgin D, Thon SM. Role of the ZnO electron transport layer in PbS colloidal quantum dot solar cell yield. NANOSCALE 2024; 16:8273-8285. [PMID: 38592692 DOI: 10.1039/d3nr06558h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The development of lead sulfide (PbS) colloidal quantum dot (CQD) solar cells has led to significant power conversion efficiency (PCE) improvements in recent years, with record efficiencies now over 15%. Many of the recent advances in improving PCE have focused on improving the interface between the PbS CQD active layer and the zinc oxide (ZnO) electron transport layer (ETL). Proper optimization of the ZnO ETL also increases yield, or the percentage of functioning devices per fabrication run. Simultaneous improvements in both PCE and yield will be critical as the field approaches commercialization. This review highlights recent advances in the synthesis of ZnO ETLs and discusses the impact and critical role of ZnO synthesis conditions on the PCE and yield of PbS CQD solar cells.
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Affiliation(s)
- Arlene Chiu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Chengchangfeng Lu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Dana E Kachman
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Eric Rong
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Sreyas M Chintapalli
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Yida Lin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Daniel Khurgin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Susanna M Thon
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA
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Cao F, Shi Y, Zhang W, Liu X, Tang X, Han Z, Zhang L, Sun B. Self-powered all-quantum dot based broadband photodetectors for color imaging and heart rate monitoring. JOURNAL OF MATERIALS CHEMISTRY C 2024; 12:12124-12130. [DOI: 10.1039/d4tc01805b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2025]
Abstract
All-quantum dot based self-powered broadband (300–1000 nm) photodetectors (SnO2 QDs/PbS-I QDs/PbS-EDT QDs) were successfully fabricated, showing great potential in long-distance color recognition imaging and human heartbeat monitoring.
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Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing 210023, P. R. China
| | - Yi Shi
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing 210023, P. R. China
| | - Wei Zhang
- School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China
| | - Xiao Liu
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing 210023, P. R. China
| | - Xu Tang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing 210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing 210023, P. R. China
| | - Li Zhang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing 210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing 210023, P. R. China
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