1
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Huang W, Liu T, Yu L, Wang J, Zhou T, Liu J, Li T, Amine R, Xiao X, Ge M, Ma L, Ehrlich SN, Holt MV, Wen J, Amine K. Unrecoverable lattice rotation governs structural degradation of single-crystalline cathodes. Science 2024; 384:912-919. [PMID: 38781394 DOI: 10.1126/science.ado1675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 04/16/2024] [Indexed: 05/25/2024]
Abstract
Transitioning from polycrystalline to single-crystalline nickel-rich cathodes has garnered considerable attention in both academia and industry, driven by advantages of high tap density and enhanced mechanical properties. However, cathodes with high nickel content (>70%) suffer from substantial capacity degradation, which poses a challenge to their commercial viability. Leveraging multiscale spatial resolution diffraction and imaging techniques, we observe that lattice rotations occur universally in single-crystalline cathodes and play a pivotal role in the structure degradation. These lattice rotations prove unrecoverable and govern the accumulation of adverse lattice distortions over repeated cycles, contributing to structural and mechanical degradation and fast capacity fade. These findings bridge the previous knowledge gap that exists in the mechanistic link between fast performance failure and atomic-scale structure degradation.
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Affiliation(s)
- Weiyuan Huang
- Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Tongchao Liu
- Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Lei Yu
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Jing Wang
- Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Tao Zhou
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Junxiang Liu
- Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Tianyi Li
- X-ray Science Division, Advanced Photon Sources, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Rachid Amine
- Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Xianghui Xiao
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Mingyuan Ge
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Lu Ma
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Steven N Ehrlich
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Martin V Holt
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Jianguo Wen
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Khalil Amine
- Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, IL 60439, USA
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2
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Paul R, Maity N, Das B, Emadian SS, Kumar A, Krishnamurthy S, Singh AK, Ghosh R. Efficient detection of 45 ppb ammonia at room temperature using Ni-doped CeO 2 octahedral nanostructures. J Colloid Interface Sci 2024; 662:663-675. [PMID: 38368824 DOI: 10.1016/j.jcis.2024.02.080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 01/30/2024] [Accepted: 02/07/2024] [Indexed: 02/20/2024]
Abstract
To meet the requirements in air quality monitors for the public and industrial safety, sensors are required that can selectively detect the concentration of gaseous pollutants down to the parts per million (ppm) and ppb (parts per billion) levels. Herein, we report a remarkable NH3 sensor using Ni-doped CeO2 octahedral nanostructure which efficiently detects NH3 as low as 45 ppb at room temperature. The Ni-doped CeO2 sensor exhibits the maximum response of 42 towards 225 ppm NH3, which is ten-fold higher than pure CeO2. The improved sensing performance is caused by the enhancement of oxygen vacancy, bandgap narrowing, and redox property of CeO2 caused by Ni doping. Density functional theory confirms that O vacancy with Ni at Ce site (VONiCe) augments the sensing capabilities. The Bader charge analysis predicts the amount of charge transfer (0.04 e) between the Ni-CeO2 surface and the NH3 molecule. As well, the high negative adsorption energy (≈750 meV) and lowest distance (1.40 Å) of the NH3 molecule from the sensor surface lowers the detection limit. The present work enlightens the fabrication of sensing elements through defect engineering for ultra-trace detection of NH3 to be useful further in the field of sensor applications.
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Affiliation(s)
- Rinku Paul
- Materials Processing & Microsystems Laboratory, CSIR-Central Mechanical Engineering Research Institute, Durgapur 713209, India; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, Uttar Pradesh, India
| | - Nikhilesh Maity
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Biswajit Das
- Materials Processing & Microsystems Laboratory, CSIR-Central Mechanical Engineering Research Institute, Durgapur 713209, India; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, Uttar Pradesh, India
| | - Seyedeh Sadrieh Emadian
- School of Engineering and Innovations, The Open University, Milton Keynes MK7 6AA, United Kingdom
| | - Ajay Kumar
- School of Engineering and Innovations, The Open University, Milton Keynes MK7 6AA, United Kingdom
| | - Satheesh Krishnamurthy
- School of Engineering and Innovations, The Open University, Milton Keynes MK7 6AA, United Kingdom
| | | | - Ranajit Ghosh
- Materials Processing & Microsystems Laboratory, CSIR-Central Mechanical Engineering Research Institute, Durgapur 713209, India; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, Uttar Pradesh, India.
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3
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Jasti NP, Levine I, Feldman Y(I, Hodes G, Aharon S, Cahen D. Experimental evidence for defect tolerance in Pb-halide perovskites. Proc Natl Acad Sci U S A 2024; 121:e2316867121. [PMID: 38657051 PMCID: PMC11067022 DOI: 10.1073/pnas.2316867121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 03/26/2024] [Indexed: 04/26/2024] Open
Abstract
The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of halide perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a "fact" in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present pioneering direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings will help the search for and design of materials with real DT.
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Affiliation(s)
- Naga Prathibha Jasti
- Institute for Nanotechnology & Advanced Materials and Department of Chemistry, Bar Ilan University, Ramat Gan5290002, Israel
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Igal Levine
- Division Solar Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin12489, Germany
| | - Yishay (Isai) Feldman
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot7610001, Israel
- Department of Chemical Research Support, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Gary Hodes
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Sigalit Aharon
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot7610001, Israel
| | - David Cahen
- Institute for Nanotechnology & Advanced Materials and Department of Chemistry, Bar Ilan University, Ramat Gan5290002, Israel
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot7610001, Israel
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4
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Lei YJ, Zhao L, Lai WH, Huang Z, Sun B, Jaumaux P, Sun K, Wang YX, Wang G. Electrochemical coupling in subnanometer pores/channels for rechargeable batteries. Chem Soc Rev 2024; 53:3829-3895. [PMID: 38436202 DOI: 10.1039/d3cs01043k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2024]
Abstract
Subnanometer pores/channels (SNPCs) play crucial roles in regulating electrochemical redox reactions for rechargeable batteries. The delicately designed and tailored porous structure of SNPCs not only provides ample space for ion storage but also facilitates efficient ion diffusion within the electrodes in batteries, which can greatly improve the electrochemical performance. However, due to current technological limitations, it is challenging to synthesize and control the quality, storage, and transport of nanopores at the subnanometer scale, as well as to understand the relationship between SNPCs and performances. In this review, we systematically classify and summarize materials with SNPCs from a structural perspective, dividing them into one-dimensional (1D) SNPCs, two-dimensional (2D) SNPCs, and three-dimensional (3D) SNPCs. We also unveil the unique physicochemical properties of SNPCs and analyse electrochemical couplings in SNPCs for rechargeable batteries, including cathodes, anodes, electrolytes, and functional materials. Finally, we discuss the challenges that SNPCs may face in electrochemical reactions in batteries and propose future research directions.
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Affiliation(s)
- Yao-Jie Lei
- Centre for Clean Energy Technology, School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Sydney, NSW 2007, Australia.
| | - Lingfei Zhao
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW 2500, Australia
| | - Wei-Hong Lai
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW 2500, Australia
| | - Zefu Huang
- Centre for Clean Energy Technology, School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Sydney, NSW 2007, Australia.
| | - Bing Sun
- Centre for Clean Energy Technology, School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Sydney, NSW 2007, Australia.
| | - Pauline Jaumaux
- Centre for Clean Energy Technology, School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Sydney, NSW 2007, Australia.
| | - Kening Sun
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 10081, P. R. China.
| | - Yun-Xiao Wang
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai, 200093, P. R. China.
| | - Guoxiu Wang
- Centre for Clean Energy Technology, School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Sydney, NSW 2007, Australia.
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5
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Zhai R, Bi J, Zheng S, Chen W, Lin Y, Xiao S, Cao Y. Electronic structure of superconducting VN(111) films. DISCOVER NANO 2024; 19:42. [PMID: 38467967 PMCID: PMC10928062 DOI: 10.1186/s11671-024-03978-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 02/13/2024] [Indexed: 03/13/2024]
Abstract
Vanadium nitride (VN) is a transition-metal nitride with remarkable properties that have prompted extensive experimental and theoretical investigations in recent years. However, there is a current paucity of experimental research investigating the temperature-dependent electronic structure of single-crystalline VN. In this study, high-quality VN(111) films were successfully synthesized on α -Al2 O3 (0001) substrates using magnetron sputtering. The crystal and electronic structures of the VN films were characterized by a combination of high-resolution X-ray diffraction, low-energy electron diffraction, resonant soft X-ray absorption spectroscopy, and ultraviolet photoelectron spectroscopy. The electrical transport measurements indicate that the superconducting critical temperature of the VN films is around 8.1 K. Intriguingly, the temperature-dependent photoelectron spectroscopy measurements demonstrate a weak temperature dependence in the electronic structure of the VN films, which is significant for understanding the ground state of VN compounds.
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Affiliation(s)
- Rongjing Zhai
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Science and Technology of China, Hefei, 230026, China
| | - Jiachang Bi
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
| | - Shun Zheng
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Wei Chen
- Hefei Innovation Research Institute, Beihang University, Hefei, 230013, China
| | - Yu Lin
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Yongjiang Laboratory, Ningbo, 315202, Zhejiang, China
| | - Shaozhu Xiao
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Yongjiang Laboratory, Ningbo, 315202, Zhejiang, China
| | - Yanwei Cao
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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6
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Hsu CY, Lai BR, Guan-Yu L, Pei Z. High detectivity Ge photodetector at 940 nm achieved by growing strained-Ge with a top Si stressor. OPTICS EXPRESS 2024; 32:10490-10504. [PMID: 38571259 DOI: 10.1364/oe.517896] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Accepted: 02/26/2024] [Indexed: 04/05/2024]
Abstract
We have developed a self-powered near-infrared photodetector (PD) with high detectivity using a tensile strained Ge layer capped with a thick Si layer. The Si layer acts as a stressor and maintains the strain of Ge with minimal dislocations by creating a rough surface. By using Raman spectroscopy, we confirmed that the Ge layer has a 1.83% in-plane tensile strain. The Ge PD exhibits a high responsivity of 0.45 A/W at -1 V bias voltage for 940 nm wavelength. The PD's dark current density is as low as ∼1.50 × 10-6 A/cm2 at -1 V. The high responsivity and low dark current result in a detectivity as high as 6.55 × 1011 cmHz1/2/W. This Ge PD has great potential for applications in light detection and ranging (LiDAR), Internet of Things (IoTs), and Optical Sensing Networks.
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7
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Yao Q, Li J, Li X, Ma Y, Song H, Li Z, Wang Z, Tao X. Achieving a Record Scintillation Performance by Micro-Doping a Heterovalent Magnetic Ion in Cs 3 Cu 2 I 5 Single-Crystal. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304938. [PMID: 37555528 DOI: 10.1002/adma.202304938] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 08/07/2023] [Indexed: 08/10/2023]
Abstract
An ultrabright, ultrafast, and low-cost ideal scintillator has been critically absent and is sorely desired in scintillation detection, but has hitherto not been found. Here, a high-quality bulk Cs3 Cu2 I5 :Mn single-crystal scintillator with ultrahigh light yield (≈95 772 photons per MeV, 137 Cs γ-rays), excellent energy resolution (3.79%, 662 keV), and ultrafast scintillation decay time (3 ns, 81.5%) is reported. In mechanism, it is found that micro-doping of a heterovalent magnetic ion (at the ppm level) can effectively modulate the luminescence kinetics of self-trapped excitons in the scintillator. Compared with previous reports, the introduction of trace amounts of magnetic Mn2+ (≈18.6 ppm) in Cs3 Cu2 I5 single-crystal shortens the scintillation decay time by several hundred times, transforming the slow decay into an ultrafast decay. Simultaneously, the light yield is also increased about three times to the highest value so far. From the comprehensive performance of the micro-doped Cs3 Cu2 I5 :Mn single-crystal, these excellent scintillation properties, physical characteristics suitable for practical applications, and low-cost advantages render this single-crystal an ideal scintillator with great potential for commercialization.
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Affiliation(s)
- Qian Yao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Jiaming Li
- State Key Laboratory of NBC Protection for Civilians, Academy of Military Science, Beijing, 102205, China
- Department of Nuclear Science and Technology, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xuesong Li
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yusheng Ma
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Haohang Song
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zhiyuan Li
- State Key Laboratory of NBC Protection for Civilians, Academy of Military Science, Beijing, 102205, China
| | - Zungang Wang
- State Key Laboratory of NBC Protection for Civilians, Academy of Military Science, Beijing, 102205, China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
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8
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Vallejo W, Cantillo A, Díaz-Uribe C. Improvement of the photocatalytic activity of ZnO thin films doped with manganese. Heliyon 2023; 9:e20809. [PMID: 37860572 PMCID: PMC10582510 DOI: 10.1016/j.heliyon.2023.e20809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Revised: 09/07/2023] [Accepted: 10/06/2023] [Indexed: 10/21/2023] Open
Abstract
In the herein report, we synthesized ZnO thin films doped with manganese (Mn). We studied the impact of Mn doping loads (1 %, 3 %, 5 % wt.) on physicochemical properties of the compounds. Furthermore, we presented the photocatalytic efficiency in removal of methylene blue dye. The structural assay indicated ZnO conserve the wurtzite crystalline structure after dopant insertion. Furthermore, the crystalline size of catalysts was reduced after dopant incorporation. The SEM analysis showed a change in surface morphology after modification of ZnO thin films. Furthermore, Raman spectroscopy verified the Mn insertion inside the ZnO lattice. After the doping process, band gap was reduced by 16 %, in comparison to bare ZnO. After the photocatalytic test, the doped catalysts showed better performance than bare ZnO in removing MB. The best test showed a kinetics constant value of 2.9 × 10-3 min-1 after 120 min of visible irradiation. Finally, the Mn(5 %):ZnO thin film was suitable after five degradation cycles, and the degradation process efficiency was reduced by 32%.
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Affiliation(s)
- William Vallejo
- Grupo de Fotoquímica y Fotobiología, Facultad de Ciencias Básicas, Universidad del Atlántico, 081007, Puerto Colombia, Colombia
| | - Alvaro Cantillo
- Grupo de Fotoquímica y Fotobiología, Facultad de Ciencias Básicas, Universidad del Atlántico, 081007, Puerto Colombia, Colombia
| | - Carlos Díaz-Uribe
- Grupo de Fotoquímica y Fotobiología, Facultad de Ciencias Básicas, Universidad del Atlántico, 081007, Puerto Colombia, Colombia
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9
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Laidouci A, Mamta, Singh V, Dakua PK, Panda DK. Performance evaluation of ZnSnN 2 solar cells with Si back surface field using SCAPS-1D: A theoretical study. Heliyon 2023; 9:e20601. [PMID: 37842560 PMCID: PMC10568353 DOI: 10.1016/j.heliyon.2023.e20601] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 09/08/2023] [Accepted: 09/30/2023] [Indexed: 10/17/2023] Open
Abstract
The earth-abundant semiconductor zinc tin nitride (ZnSnN2) has garnered significant attention as a prospective material in photovoltaic and lighting applications, primarily due to its tunable narrow bandgap and high absorption coefficient. This study focuses on a numerical investigation of ZnSnN2 solar cell structures using the SCAPS 1-D software. The objective is to analyze the influence of various physical and geometrical parameters on solar cell performance. These parameters include the thicknesses of the ZnO window layer, CdS buffer layer, ZnSnN2 absorber layer, and Si back surface field layer (BSF), as well as operating temperature, series and shunt resistances (RS and Rsh), absorber layer defect density, interface defects, and the generation-recombination profile of the n-ZnO:Al/n-CdS/p-ZnSnN2/p-Si/Mo structure. We have evaluated the capabilities of this novel material absorber by investigating its performance across a range of thicknesses. We have started with ultrathin absorber thicknesses and gradually increased them to thicker levels to determine the optimal thickness for achieving high efficiency. Under optimal conditions, a thin solar cell with a thickness (wp) of 1 μm achieved an efficiency (η) of 23.9%. In a practical solar cell operating at room temperature, optimal parameters were observed with a thicker absorber layer (wp = 8 μm) and a BSF width of 0.3 μm. The cell exhibited resistances of Rsh = 106 Ω cm2 and Rs = 1 Ω cm2, along with a low defect density (Nt = 1010 cm-3) in the ZnSnN2 semiconductor. These factors combined to yield an impressive efficiency of 29.5%. Numerous studies on emerging ternary nitride semiconductors (Zn-IV-N2) have highlighted ZnSnN2 as a promising material for thin-film photovoltaics. This compound is appealing due to its abundance, non-toxicity, and cost-effectiveness. Unlike conventional solar cells that depend on rare, toxic, and costly elements, these components are still essential for today's solar cell technology.
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Affiliation(s)
| | - Mamta
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh, 201002, India
- Indian Reference Materials (BND) Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India
| | - V.N. Singh
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh, 201002, India
- Indian Reference Materials (BND) Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India
| | - Pratap Kumar Dakua
- Department of ECE, Vignan's Institute of Information Technology (A), Duvada, Vishakapatnam, AP, 530049, India
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10
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Siddiki AKMNA, Lin J, Balkus KJ. Encapsulation of ZnO and Ho:ZnO Nanoparticles in the Core of Wrinkled Mesoporous Silica. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:12956-12965. [PMID: 37647154 DOI: 10.1021/acs.langmuir.3c02225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Wrinkled mesoporous silica (WMS) has a flower- or dendritic-like morphology, tunable pore size, and highly ordered and accessible three-dimensional (3D) pore structures. In this research, a method to encapsulate semiconductor nanoparticles in the core of the wrinkled mesoporous silica during synthesis is described. Highly uniform zinc oxide and holmium-doped zinc oxide nanoparticles have been synthesized by a sonochemical method. Zinc oxide and holmium-doped zinc oxide nanoparticles have been encapsulated in wrinkled mesoporous silica during synthesis. The ZnO@WMS and Ho:ZnO@WMS particles have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), UV-vis spectroscopy, fluorescence, dynamic light scattering (DLS), confocal microscopy, and X-ray diffraction (XRD).
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Affiliation(s)
- A K M Nur Alam Siddiki
- Department of Chemistry and Biochemistry, University of Texas at Dallas, Dallas, Texas 75080, United States
| | - Jason Lin
- Department of Chemistry and Biochemistry, University of Texas at Dallas, Dallas, Texas 75080, United States
| | - Kenneth J Balkus
- Department of Chemistry and Biochemistry, University of Texas at Dallas, Dallas, Texas 75080, United States
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11
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Hou Z, Cui C, Li Y, Gao Y, Zhu D, Gu Y, Pan G, Zhu Y, Zhang T. Lattice-Strain Engineering for Heterogenous Electrocatalytic Oxygen Evolution Reaction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209876. [PMID: 36639855 DOI: 10.1002/adma.202209876] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Revised: 01/06/2023] [Indexed: 06/17/2023]
Abstract
The energy efficiency of metal-air batteries and water-splitting techniques is severely constrained by multiple electronic transfers in the heterogenous oxygen evolution reaction (OER), and the high overpotential induced by the sluggish kinetics has become an uppermost scientific challenge. Numerous attempts are devoted to enabling high activity, selectivity, and stability via tailoring the surface physicochemical properties of nanocatalysts. Lattice-strain engineering as a cutting-edge method for tuning the electronic and geometric configuration of metal sites plays a pivotal role in regulating the interaction of catalytic surfaces with adsorbate molecules. By defining the d-band center as a descriptor of the structure-activity relationship, the individual contribution of strain effects within state-of-the-art electrocatalysts can be systematically elucidated in the OER optimization mechanism. In this review, the fundamentals of the OER and the advancements of strain-catalysts are showcased and the innovative trigger strategies are enumerated, with particular emphasis on the feedback mechanism between the precise regulation of lattice-strain and optimal activity. Subsequently, the modulation of electrocatalysts with various attributes is categorized and the impediments encountered in the practicalization of strained effect are discussed, ending with an outlook on future research directions for this burgeoning field.
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Affiliation(s)
- Zhiqian Hou
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chenghao Cui
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yanni Li
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yingjie Gao
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Deming Zhu
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yuanfan Gu
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guoyu Pan
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yaqiong Zhu
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tao Zhang
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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12
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Rekhtina M, Krödel M, Wu YH, Kierzkowska A, Donat F, Abdala PM, Müller CR. Deciphering the structural dynamics in molten salt-promoted MgO-based CO 2 sorbents and their role in the CO 2 uptake. SCIENCE ADVANCES 2023; 9:eadg5690. [PMID: 37379379 DOI: 10.1126/sciadv.adg5690] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Accepted: 05/23/2023] [Indexed: 06/30/2023]
Abstract
The development of effective CO2 sorbents is vital to achieving net-zero CO2 emission targets. MgO promoted with molten salts is an emerging class of CO2 sorbents. However, the structural features that govern their performance remain elusive. Using in situ time-resolved powder x-ray diffraction, we follow the structural dynamics of a model NaNO3-promoted, MgO-based CO2 sorbent. During the first few cycles of CO2 capture and release, the sorbent deactivates owing to an increase in the sizes of the MgO crystallites, reducing in turn the abundance of available nucleation points, i.e., MgO surface defects, for MgCO3 growth. After the third cycle, the sorbent shows a continuous reactivation, which is linked to the in situ formation of Na2Mg(CO3)2 crystallites that act effectively as seeds for MgCO3 nucleation and growth. Na2Mg(CO3)2 forms due to the partial decomposition of NaNO3 during regeneration at T ≥ 450°C followed by carbonation in CO2.
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Affiliation(s)
- Margarita Rekhtina
- Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zürich, Leonhardstrasse 21, 8092 Zürich, Switzerland
| | - Maximilian Krödel
- Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zürich, Leonhardstrasse 21, 8092 Zürich, Switzerland
| | - Yi-Hsuan Wu
- Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zürich, Leonhardstrasse 21, 8092 Zürich, Switzerland
| | - Agnieszka Kierzkowska
- Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zürich, Leonhardstrasse 21, 8092 Zürich, Switzerland
| | - Felix Donat
- Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zürich, Leonhardstrasse 21, 8092 Zürich, Switzerland
| | - Paula M Abdala
- Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zürich, Leonhardstrasse 21, 8092 Zürich, Switzerland
| | - Christoph R Müller
- Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zürich, Leonhardstrasse 21, 8092 Zürich, Switzerland
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13
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Oyetade JA, Machunda RL, Hilonga A. Functional impacts of polyaniline in composite matrix of photocatalysts: an instrumental overview. RSC Adv 2023; 13:15467-15489. [PMID: 37223409 PMCID: PMC10201395 DOI: 10.1039/d3ra01243c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Accepted: 05/08/2023] [Indexed: 05/25/2023] Open
Abstract
The challenges associated with photocatalysts including their agglomeration, electron-hole recombination and limited optoelectronic reactivity to visible light during the photocatalysis of dye-laden effluent make it necessary to fabricate versatile polymeric composite photocatalysts, and in this case the incredibly reactive conducting polyaniline can be employed. The selection of polyaniline among the conducting polymers is based on its proficient functional impacts in composite blends and proficient synergism with other nanomaterials, especially semiconductor catalysts, resulting in a high photocatalytic performance for the degradation of dyes. However, the impacts of PANI in the composite matrix, which result in the desired photocatalytic activities, can only be assessed using multiple characterization techniques, involving both microscopic and spectroscopic assessment. The characterization results play a significant role in the detection of possible points of agglomeration, surface tunability and improved reactivity during the fabrication of composites, which are necessary to improve their performance in the photocatalysis of dyes. Accordingly, studies revealed the functional impacts of polyaniline in composites including morphological transformation, improved surface functionality, reduction in agglomeration and lowered bandgap potential employing different characterization techniques. In this review, we present the most proficient fabrication techniques based on the in situ approach to achieve improved functional and reactive features and efficiencies of 93, 95, 96, 98.6 and 99% for composites in dye photocatalysis.
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Affiliation(s)
- Joshua Akinropo Oyetade
- School of Materials, Energy, Water and Environmental Science, Nelson Mandela African of Institution of Sciences and Technology PO Box 447 Arusha Tanzania
| | - Revocatus Lazaro Machunda
- School of Materials, Energy, Water and Environmental Science, Nelson Mandela African of Institution of Sciences and Technology PO Box 447 Arusha Tanzania
| | - Askwar Hilonga
- School of Materials, Energy, Water and Environmental Science, Nelson Mandela African of Institution of Sciences and Technology PO Box 447 Arusha Tanzania
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14
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Lábár JL, Pécz B, van Waveren A, Hallais G, Desvignes L, Chiodi F. Strain Measurement in Single Crystals by 4D-ED. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1007. [PMID: 36985899 PMCID: PMC10054437 DOI: 10.3390/nano13061007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 03/01/2023] [Accepted: 03/06/2023] [Indexed: 06/18/2023]
Abstract
A new method is presented to measure strain over a large area of a single crystal. The 4D-ED data are collected by recording a 2D diffraction pattern at each position in the 2D area of the TEM lamella scanned by the electron beam of STEM. Data processing is completed with a new computer program (available free of charge) that runs under the Windows operating system. Previously published similar methods are either commercial or need special hardware (electron holography) or are based on HRTEM, which involves limitations with respect to the size of the field of view. All these limitations are overcome by our approach. The presence of defects results in small local changes in orientation that change the subset of experimentally available diffraction spots in the individual patterns. Our method is based on a new principle, namely fitting a lattice to (a subset of) measured diffraction spots to improve the precision of the measurement. Although a spot to be measured may be missing in some of the patterns even the missing spot can be precisely measured by the lattice determined from the available spots. Application is exemplified by heavily boron-doped silicon with intended usage as a low-temperature superconductor in qubits.
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Affiliation(s)
- János L. Lábár
- Thin Film Physics Laboratory, Institute of Technical Physics and Materials Science, Centre of Energy Research, Konkoly Thege M. u. 29-33, H-1121 Budapest, Hungary;
| | - Béla Pécz
- Thin Film Physics Laboratory, Institute of Technical Physics and Materials Science, Centre of Energy Research, Konkoly Thege M. u. 29-33, H-1121 Budapest, Hungary;
| | - Aiken van Waveren
- Centre de Nanosciences et de Nanotechnologies—C2N, Université Paris-Saclay, CNRS, 91120 Palaiseau, France (F.C.)
| | - Géraldine Hallais
- Centre de Nanosciences et de Nanotechnologies—C2N, Université Paris-Saclay, CNRS, 91120 Palaiseau, France (F.C.)
| | - Léonard Desvignes
- Centre de Nanosciences et de Nanotechnologies—C2N, Université Paris-Saclay, CNRS, 91120 Palaiseau, France (F.C.)
| | - Francesca Chiodi
- Centre de Nanosciences et de Nanotechnologies—C2N, Université Paris-Saclay, CNRS, 91120 Palaiseau, France (F.C.)
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15
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Ratajczak R, Guziewicz E, Prucnal S, Mieszczynski C, Jozwik P, Barlak M, Romaniuk S, Gieraltowska S, Wozniak W, Heller R, Kentsch U, Facsko S. Enhanced Luminescence of Yb 3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1756. [PMID: 36902872 PMCID: PMC10003926 DOI: 10.3390/ma16051756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 02/10/2023] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these systems is currently under development, opening up new fields of application due to the low-cost production. Ion implantation is a very promising technique to incorporate rare-earth dopants into ZnO. However, the ballistic nature of this process makes the use of annealing essential. The selection of implantation parameters, as well as post-implantation annealing, turns out to be non-trivial because they determine the luminous efficiency of the ZnO:RE system. This paper presents a comprehensive study of the optimal implantation and annealing conditions, ensuring the most efficient luminescence of RE3+ ions in the ZnO matrix. Deep and shallow implantations, implantations performed at high and room temperature with various fluencies, as well as a range of post-RT implantation annealing processes are tested: rapid thermal annealing (minute duration) under different temperatures, times, and atmospheres (O2, N2, and Ar), flash lamp annealing (millisecond duration) and pulse plasma annealing (microsecond duration). It is shown that the highest luminescence efficiency of RE3+ is obtained for the shallow implantation at RT with the optimal fluence of 1.0 × 1015 RE ions/cm2 followed by a 10 min annealing in oxygen at 800 °C, and the light emission from such a ZnO:RE system is so bright that can be observed with the naked eye.
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Affiliation(s)
- Renata Ratajczak
- National Centre for Nuclear Research, Soltana 7, 05-400 Otwock, Poland
| | - Elzbieta Guziewicz
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Slawomir Prucnal
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany
| | | | - Przemysław Jozwik
- National Centre for Nuclear Research, Soltana 7, 05-400 Otwock, Poland
| | - Marek Barlak
- National Centre for Nuclear Research, Soltana 7, 05-400 Otwock, Poland
| | - Svitlana Romaniuk
- National Centre for Nuclear Research, Soltana 7, 05-400 Otwock, Poland
| | - Sylwia Gieraltowska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Wojciech Wozniak
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - René Heller
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany
| | - Stefan Facsko
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany
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16
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Yontar AK, Çevik S. Effects of Plant Extracts and Green-Synthesized Silver Nanoparticles on the Polyvinyl Alcohol (PVA) Nanocomposite Films. ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING 2023. [DOI: 10.1007/s13369-023-07643-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2023]
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17
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Stevanović JN, Petrović SP, Tadić NB, Cvetanović K, Silva AG, Radović DV, Sarajlić M. Mechanochemical Synthesis of TiO 2-CeO 2 Mixed Oxides Utilized as a Screen-Printed Sensing Material for Oxygen Sensor. SENSORS (BASEL, SWITZERLAND) 2023; 23:1313. [PMID: 36772353 PMCID: PMC9919251 DOI: 10.3390/s23031313] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 01/14/2023] [Accepted: 01/21/2023] [Indexed: 06/18/2023]
Abstract
TiO2 and CeO2 are well known as oxygen sensing materials. Despite high sensitivity, the actual utilization of these materials in gas detection remains limited. Research conducted over the last two decades has revealed synergistic effects of TiO2-CeO2 mixed oxides that have the potential to improve some aspects of oxygen monitoring. However, there are no studies on the sensing properties of the TiO2-CeO2 obtained by mechanochemical treatment. We have tested the applicability of the mechanochemically treated TiO2-CeO2 for oxygen detection and presented the results in this study. The sensing layers are prepared as a porous structure by screen printing a thick film on a commercial substrate. The obtained structures were exposed to various O2 concentrations. The results of electrical measurements showed that TiO2-CeO2 films have a significantly lower resistance than pure oxide films. Mixtures of composition TiO2:CeO2 = 0.8:0.2, ground for 100 min, have the lowest electrical resistance among the tested materials. Mixtures of composition TiO2:CeO2 = 0.5:0.5 and ground for 100 min proved to be the most sensitive. The operating temperature can be as low as 320 °C, which places this sensor in the class of semiconductor sensors working at relatively lower temperatures.
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Affiliation(s)
- Jelena N. Stevanović
- Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia
| | - Srđan P. Petrović
- Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia
| | - Nenad B. Tadić
- Faculty of Physics, University of Belgrade, Studentski trg 16, 11000 Belgrade, Serbia
| | - Katarina Cvetanović
- Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia
| | - Ana G. Silva
- CeFiTec, Nova School of Science and Technology, New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
| | - Dana Vasiljević Radović
- Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia
| | - Milija Sarajlić
- Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia
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Li Q, Zheng X, Shen X, Ding S, Feng H, Wu G, Zhang Y. Optimizing the Synthetic Conditions of "Green" Colloidal AgBiS 2 Nanocrystals Using a Low-Cost Sulfur Source. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3742. [PMID: 36364517 PMCID: PMC9654632 DOI: 10.3390/nano12213742] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 10/21/2022] [Accepted: 10/21/2022] [Indexed: 06/16/2023]
Abstract
Colloidal AgBiS2 nanocrystals (NCs) have attracted increasing attention as a near-infrared absorbent materials with non-toxic elements and a high absorption coefficient. In recent years, colloidal AgBiS2 NCs have typically been synthesized via the hot injection method using hexamethyldisilathiane (TMS) as the sulfur source. However, the cost of TMS is one of the biggest obstacles to large-scale synthesis of colloidal AgBiS2 NCs. Herein, we synthesized colloidal AgBiS2 NCs using oleylamine@sulfur (OLA-S) solution as the sulfur source instead of TMS and optimized the synthesis conditions of colloidal AgBiS2 NCs. By controlling the reaction injection temperature and the dosage of OLA-S, colloidal AgBiS2 NCs with adjustable size can be synthesized. Compared with TMS-based colloidal AgBiS2 NCs, the colloidal AgBiS2 NCs based on OLA-S has good crystallinity and fewer defects.
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Affiliation(s)
- Qiao Li
- School of Physics, Northwest University, Xi’an 710127, China
| | - Xiaosong Zheng
- School of Physics, Northwest University, Xi’an 710127, China
| | - Xiaoyu Shen
- School of Physics, Northwest University, Xi’an 710127, China
| | - Shuai Ding
- School of Physics, Northwest University, Xi’an 710127, China
| | - Hongjian Feng
- School of Physics, Northwest University, Xi’an 710127, China
| | - Guohua Wu
- Qingdao Innovation and Development Base of Harbin Engineering University, Harbin Engineering University, Harbin 150001, China
| | - Yaohong Zhang
- School of Physics, Northwest University, Xi’an 710127, China
- Shaanxi Key Laboratory for Carbon Neutral Technology, Xi’an 710127, China
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