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Liu T, Wang L, Yuan Z, Wang J, Huang J, Wu W, Meng X. Quasi-Single-Crystal Tin Halide Perovskite Films with High Structural Integrity for Near-Infrared Imaging Array Enabling Hidden Object Recognition. Angew Chem Int Ed Engl 2025; 64:e202418470. [PMID: 39467775 DOI: 10.1002/anie.202418470] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2024] [Revised: 10/21/2024] [Accepted: 10/28/2024] [Indexed: 10/30/2024]
Abstract
Near-infrared (NIR) image sensors based on solution-processed thin film are gaining prominence in various applications, including security detection, remote sensing, medical imaging, and environmental monitoring, owing to superior penetration capabilities of NIR light. However, the reported perovskite image sensors suffer from limited resolution and performance due to poor structural integrity, bioincompatibility, and constrained response wavelength range from lead-based perovskite materials employed. In this study, we present non-toxic quasi-single-crystal (QSC) CH(NH2)2SnI3 (FASnI3) perovskite films, prepared via a simple spin-coating technique, that demonstrate high structural integrity and effective NIR response. Through a series of in situ characterizations, we reveal that the orderly growth mode of QSC-FASnI3 perovskite films enables a more oriented crystal growth with reduced trap and grain boundaries. Consequently, self-powered NIR photodetector based on QSC-FASnI3 films exhibited large detectivity over 1013 Jones in the NIR range (780-890 nm). Ultimately, due to the high structural integrity, the high-resolution 64×64 (4096) pixels NIR imaging array, exhibiting reduced photo and dark response non-uniformity value, was fabricated on the thin-film transistors (TFT) backplanes, enabling ultraweak NIR light (63 nW cm-2) real-time imaging, fingerprint imaging, and hidden object recognition. This work pioneers the application of lead-free perovskite for high-resolution NIR imaging arrays.
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Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziquan Yuan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie Huang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Weitong Wu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Chen Y, Niu S, Li Y, Dou W, Yang X, Shan C, Shen G. Flexible Single Microwire X-Ray Detector with Ultrahigh Sensitivity for Portable Radiation Detection System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404656. [PMID: 39155814 DOI: 10.1002/adma.202404656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 08/12/2024] [Indexed: 08/20/2024]
Abstract
Sensitive, flexible, and low false alarm rate X-ray detector is crucial for medical diagnosis, industrial inspection, and scientific research. However, most semiconductors for X-ray detectors are susceptible to interference from ambient light, and their high thickness hinders their application in wearable electronics. Herein, a flexible visible-blind and ultraviolet-blind X-ray detector based on Indium-doped Gallium oxide (Ga2O3:In) single microwire is prepared. Joint experiment-theory characterizations reveal that the Ga2O3:In microwire possess a high crystal quality, large band gap, and satisfactory stability, and reliability. On this basis, an extraordinary sensitivity of 5.9 × 105 µC Gyair -1 cm-2 and a low detection limit of 67.4 nGyair s-1 are achieved based on the prepared Ag/Ga2O3:In/Ag device, which has outstanding operation stability and excellent high temperature stability. Taking advantage of the flexible properties of the single microwire, a portable X-ray detection system is demonstrated that shows the potential to adapt to flexible and lightweight formats. The proposed X-ray detection system enables real-time monitor for X-rays, which can be displayed on the user interface. More importantly, it has excellent resistance to natural light interference, showing a low false alarm rate. This work provides a feasible method for exploring high-performance flexible integrated micro/nano X-ray detection devices.
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Affiliation(s)
- Yancheng Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shifeng Niu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang, 471023, China
| | - Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
| | - Wenjie Dou
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Xun Yang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
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Han H, Zhang B, Zhang Z, Wang Y, Liu C, Singh AK, Song A, Li Y, Jin J, Zhang J. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction. NANO LETTERS 2024; 24:8602-8608. [PMID: 38954477 DOI: 10.1021/acs.nanolett.4c01679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 1014 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm2, promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.
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Affiliation(s)
- Hecheng Han
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Baoqing Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Zihao Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Yiming Wang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Arun Kumar Singh
- Department of Electronics and Communications Engineering, Punjab Engineering College (Deemed to be University), Chandigarh 160012, India
| | - Aimin Song
- Department of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom
- Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuxiang Li
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Jidong Jin
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of Korea
| | - Jiawei Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
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Liu T, Wang J, Liu Y, Min L, Wang L, Yuan Z, Sun H, Huang L, Li L, Meng X. Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400090. [PMID: 38433566 DOI: 10.1002/adma.202400090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 02/24/2024] [Indexed: 03/05/2024]
Abstract
Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2)2SnI3 (FASnI3) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+. Consequently, FASnI3-CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3-CNI exhibits low dark current (1.04 × 10-9 A cm-2), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3-CNI photodetector. In addition, flexible photodetectors based on FASnI3-CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3-CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.
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Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongsi Liu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziquan Yuan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Dong K, Yang X, Yao F, Cong H, Zhou H, Zhou S, Cui H, Wang S, Tao C, Sun C, Fu H, Ke W, Fang G. Spacer Conformation Induced Multiple Hydrogen Bonds in 2D Perovskite toward Highly Efficient Optoelectronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313889. [PMID: 38536181 DOI: 10.1002/adma.202313889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 03/19/2024] [Indexed: 04/04/2024]
Abstract
Two-dimensional (2D) Dion-Jacobson (DJ) perovskites typically outperform Ruddlesden-Popper (RP) analogs in terms of photodetection (PD). However, the mechanism behind this enhanced performance remains elusive. Theoretical calculations for elucidating interlayer spacer conformation-induced multiple hydrogen bonds in 2D perovskite are presented, along with the synthesis of DPAPbBr4 (DPB) single crystals (SCs) and their PD properties under X-ray/ultraviolet (UV) excitation. The high-quality DPB SC enhances PD with exceptional photoresponse attributes, including a high on/off ratio (4.89 × 104), high responsivity (2.44 A W⁻1), along with large dynamic linear range (154 dB) and low detection limit (7.1 nW cm⁻2), which are currently the best results among 2D perovskite SC detectors, respectively. Importantly, high-resolution images are obtained under UV illumination with weak light levels. The SC X-ray detector exhibits a high sensitivity of 663 µC Gyair⁻1 cm-2 at 10 V and a detection limit of 1.44 µGyair s⁻1. This study explores 2D DJ perovskites for efficient and innovative optoelectronic applications.
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Affiliation(s)
- Kailian Dong
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan University Shenzhen Research Institute, Shenzhen, 518055, P. R. China
| | - Xiangfeng Yang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fang Yao
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan University Shenzhen Research Institute, Shenzhen, 518055, P. R. China
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, 430200, P. R. China
| | - Hengjiang Cong
- College of Chemistry & Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Hai Zhou
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Shun Zhou
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hongsen Cui
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Shuxin Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chen Tao
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, 430200, P. R. China
| | - Chengliang Sun
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Huahua Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Weijun Ke
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan University Shenzhen Research Institute, Shenzhen, 518055, P. R. China
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, 430200, P. R. China
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Yang Y, Li Y, Chen D, Shen G. Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning. MATERIALS HORIZONS 2024; 11:1934-1943. [PMID: 38345761 DOI: 10.1039/d3mh02154h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/23/2024]
Abstract
The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm-2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.
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Affiliation(s)
- Yaqian Yang
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Di Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
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Zhou Y, Sun H, Guo L, Min L, Wang M, Li L. Emerging Computational Micro-Spectrometers - From Complex System Integration to Simple In Situ Modulation. SMALL METHODS 2023; 7:e2300479. [PMID: 37653642 DOI: 10.1002/smtd.202300479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Revised: 08/04/2023] [Indexed: 09/02/2023]
Abstract
The extensive applications of spectrum analysis across various fields have rendered the traditional desktop spectrometers unable to meet the market demand for portability and instantaneity. Reducing the size of spectrometers has become a topic of interest. Based on this trend, a novel type of computational spectrometer is developed and has been widely studied owing to its unique features. Such spectrometers do not need to integrate complex mechanical or optical structures, and most of them can achieve spectrum analysis by the properties of the material itself combines with the reconstruction algorithm. Impressively, a single-detector computational spectrometer has recently been successfully realized based on in situ modulation of material properties. This not only enables the further miniaturization of the device, but also means that the footprint-resolution limitation which has always existed in the field of hyperspectral imaging has been broken, opening a new era of image analysis. This review summarizes the classifications and principles of various spectrometers, compares the spectrum resolution performances of different types of spectrometers, and highlights the progress of computational spectrometers, especially the revolutionary single-detector spectrometer. It is expected that this review will provide a positive impact on expanding the boundary of spectrum analysis and move hyperspectral imaging forward.
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Affiliation(s)
- Yicheng Zhou
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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