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Liu T, Wang J, Liu Y, Min L, Wang L, Yuan Z, Sun H, Huang L, Li L, Meng X. Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging. Adv Mater 2024:e2400090. [PMID: 38433566 DOI: 10.1002/adma.202400090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 02/24/2024] [Indexed: 03/05/2024]
Abstract
Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2 )2 SnI3 (FASnI3 ) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+ . Consequently, FASnI3 -CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3 -CNI exhibits low dark current (1.04 × 10-9 A cm-2 ), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3 -CNI photodetector. In addition, flexible photodetectors based on FASnI3 -CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3 -CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2 ) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.
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Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongsi Liu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziquan Yuan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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