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Jin S, Liu Y, Gu B, Zhang X, Wang Y, Chen Y, Xia T, Huang B, Hong J, Wang X. Edge-Mediated Magnetic Domain Rearrangement in van der Waals Magnet Fe 3GaTe 2. NANO LETTERS 2025; 25:7885-7891. [PMID: 40325929 DOI: 10.1021/acs.nanolett.5c01181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2025]
Abstract
The emergence of van der Waals (vdW) magnets has opened new frontiers for investigation of 2-dimensional magnetism and application of spintronic memories. However, as the system approached the nanoscale, the edge effect significantly enhanced, posing critical challenges in understanding edge-mediated modifications of magnetic behavior, such as the nanoscale magnetic domain. Here, we employ magnetic force microscopy to systematically investigate edge-mediated magnetic domain rearrangement in Fe3GaTe2 flakes. By performing thermal treatment, we observed a distinct transition from labyrinthine to edge-localized stripe domains perpendicular to the flake edges. Furthermore, we reveal a competition and stabilization between size effect and edge effect by investigating thickness-dependent variation in the length of stripe domains and indicate that such an edge effect suppresses the formation of skyrmions. These findings not only elucidate the critical role of the edge effect in governing the domain morphology of vdW magnets but also provide insights for designing edge-mediated nanostructures in next-generation spintronic devices.
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Affiliation(s)
- Shuaizhao Jin
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yujia Liu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Baijun Gu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xiangping Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Yiting Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Yichong Chen
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Tianlong Xia
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Boyuan Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
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2
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Mei T, Chen F, Huang T, Feng Z, Wan T, Han Z, Li Z, Hu L, Lin CH, Lu Y, Cheng W, Qi DC, Chu D. Ion-Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications. ACS NANO 2025; 19:17140-17172. [PMID: 40297996 DOI: 10.1021/acsnano.5c02397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/30/2025]
Abstract
With the increasing limitations of conventional computing techniques, particularly the von Neumann bottleneck, the brain's seamless integration of memory and processing through synapses offers a valuable model for technological innovation. Inspired by biological synapse facilitating adaptive, low-power computation by modulating signal transmission via ionic conduction, iontronic synaptic devices have emerged as one of the most promising candidates for neuromorphic computing. Meanwhile, the atomic-scale thickness and tunable electronic properties of van der Waals two-dimensional (2D) materials enable the possibility of designing highly integrated, energy-efficient devices that closely replicate synaptic plasticity. This review comprehensively analyzes advancements in iontronic synaptic devices based on 2D materials, focusing on electron-ion interactions in both iontronic transistors and memristors. The challenges of material stability, scalability, and device integration are evaluated, along with potential solutions and future research directions. By highlighting these developments, this review offers insights into the potential of 2D materials in advancing neuromorphic systems.
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Affiliation(s)
- Tingting Mei
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Fandi Chen
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Tianxu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Zijian Feng
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Tao Wan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Zhaojun Han
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane 4000, Australia
| | - Zhi Li
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT 0200, Australia
| | - Wenlong Cheng
- School of Biomedical Engineering, University of Sydney, Darlington, NSW 2008, Australia
| | - Dong-Chen Qi
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4001, Australia
| | - Dewei Chu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
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3
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Stroyuk O, Raievska O, Hauch J, Brabec CJ. Atomically thin 2D materials for solution-processable emerging photovoltaics. Chem Commun (Camb) 2025; 61:455-475. [PMID: 39641155 DOI: 10.1039/d4cc05133e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2024]
Abstract
Atomically thin 2D materials, such as graphene and graphene oxide, covalent organic frameworks, layered carbides, and metal dichalcogenides, reveal a unique variability of electronic and chemical properties, ensuring their prospects in various energy generation, conversion, and storage applications, including light harvesting in emerging photovoltaic (ePV) devices with organic and perovskite absorbers. Having an extremely high surface area, the 2D materials allow a broad variability of the bandgap and interband transition type, conductivity, charge carrier mobility, and work function through mild chemical modifications, external stimuli, or combination with other 2D species into van-der-Waals heterostructures. This review provides an account of the most prominent "selling points" of atomically thin 2D materials as components of ePV solar cells, including highly tunable charge extraction selectivity and work function, structure-directing and stabilizing effects on halide perovskite light absorbers, as well as broad adaptability of 2D materials to solution-based manufacturing of ePV solar cells using sustainable and upscalable printing technologies. A special focus is placed on the large potential of the materials discovery and design of ePV functionalities based on van-der-Waals stacking of atomically thin 2D building blocks, which can open a vast compositional domain of new materials navigable with machine-learning-based accelerated materials screening.
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Affiliation(s)
- Oleksandr Stroyuk
- Forschungszentrum Jülich GmbH, Helmholtz-Institut Erlangen Nürnberg für Erneuerbare Energien (HI ERN), 91058 Erlangen, Germany.
| | - Oleksandra Raievska
- Forschungszentrum Jülich GmbH, Helmholtz-Institut Erlangen Nürnberg für Erneuerbare Energien (HI ERN), 91058 Erlangen, Germany.
| | - Jens Hauch
- Forschungszentrum Jülich GmbH, Helmholtz-Institut Erlangen Nürnberg für Erneuerbare Energien (HI ERN), 91058 Erlangen, Germany.
- Friedrich-Alexander-Universität Erlangen-Nürnberg, Materials for Electronics and Energy Technology (i-MEET), Martensstrasse 7, 91058 Erlangen, Germany
| | - Christoph J Brabec
- Forschungszentrum Jülich GmbH, Helmholtz-Institut Erlangen Nürnberg für Erneuerbare Energien (HI ERN), 91058 Erlangen, Germany.
- Friedrich-Alexander-Universität Erlangen-Nürnberg, Materials for Electronics and Energy Technology (i-MEET), Martensstrasse 7, 91058 Erlangen, Germany
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Boland CS, Sun Y, Papageorgiou DG. Bandgap Engineering of 2D Materials toward High-Performing Straintronics. NANO LETTERS 2024; 24. [PMID: 39356251 PMCID: PMC11487627 DOI: 10.1021/acs.nanolett.4c03321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2024] [Revised: 09/20/2024] [Accepted: 09/25/2024] [Indexed: 10/03/2024]
Abstract
Straintronics leverages mechanical strain to alter the electronic properties of materials, providing an energy-efficient alternative to traditional electronic controls while enhancing device performance. Key to the application of straintronics is bandgap engineering, which enables tuning of the energy difference between the valence and conduction bands of a material to optimize its optoelectronic properties. This mini-review highlights the fundamental principles of straintronics and the critical role of bandgap engineering within this context. It discusses the unique characteristics of various two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), and black phosphorus, which make them suitable for strain-engineered applications. Detailed examples of how mechanical deformation can modulate the bandgap to achieve desired electronic properties are provided, while recent experimental and theoretical studies demonstrating the mechanisms by which strain influences the bandgap in these materials are reviewed, emphasizing their implications for device fabrication. The review concludes with an assessment of the challenges and future directions in the development of high-performing straintronic devices, highlighting their potential applications in flexible electronics, sensors, and optoelectronics.
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Affiliation(s)
- Conor S. Boland
- School
of Mathematical and Physical Sciences, University
of Sussex, Brighton, BN1 9QH, U.K.
| | - Yiwei Sun
- School
of Engineering and Materials Science, Queen
Mary University, London, E1 4NS, U.K.
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Jiménez-Arévalo N, Mariani C, Leardini F, Pandolfi F, Rago I, Frisenda R. X-ray photoelectron spectroscopy of high-throughput mechanically exfoliated van der Waals materials. NANOSCALE 2024; 16:17559-17566. [PMID: 39225626 DOI: 10.1039/d4nr02882a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
X-ray photoelectron spectroscopy (XPS) is a widely used and easy accessible characterisation technique for investigating the chemical composition of materials. However, investigating the composition of van der Waals (vdW) flakes by XPS is challenging due to the typical spot size of XPS setups compared to the dimensions of the flakes, which are usually one thousand times smaller than the spot size. In this work, we demonstrate the feasibility of quantitative elemental analysis of vdW materials by using high-throughput mechanical exfoliations, which favour the coverage of arbitrary substrates with flakes of areas of the order of the cm2 using minimal quantities of materials (about 10 μg). We have analysed the chemical composition of MoS2, graphite, WSe2 and FePS3. The high-resolution measurement of their main core levels through XPS demonstrates the absence of significant contamination during the transfer method. In the case of air-sensitive FePS3, the glove box fabrication and its degradation in air are discussed. Overall, this research opens the possibility of evaluating the purity of commercial or lab-synthesized flakes and paves the way towards a more systematic comparison between the composition of vdW materials produced and used among different laboratories.
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Affiliation(s)
| | - Carlo Mariani
- Dipartimento di Fisica, Università di Roma "La Sapienza", 00185, Rome, Italy.
- Istituto Nazionale di Fisica Nucleare Sezione di Roma, 00185 Rome, Italy
| | - Fabrice Leardini
- Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Francesco Pandolfi
- Istituto Nazionale di Fisica Nucleare Sezione di Roma, 00185 Rome, Italy
| | - Ilaria Rago
- Istituto Nazionale di Fisica Nucleare Sezione di Roma, 00185 Rome, Italy
| | - Riccardo Frisenda
- Dipartimento di Fisica, Università di Roma "La Sapienza", 00185, Rome, Italy.
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6
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Garrido M, Criado A, Prato M. Simultaneous exfoliation and functionalization of MoS 2 with tetrapyridyl porphyrin. NANOSCALE 2024; 16:13525-13533. [PMID: 38946392 DOI: 10.1039/d4nr01802h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Molybdenum disulfide (MoS2) attracts the attention of the scientific community due to its thickness dependent properties. To fully exploit these features, it is necessary to produce the material in mono or few-layers on a large scale. Several methodologies have been developed for this purpose, the most promising one being liquid phase exfoliation (LPE). LPE allows obtaining good quality exfoliated MoS2 in a simple and scalable manner. Herein we report the simultaneous exfoliation and functionalization of MoS2 in chloroform using a specific porphyrin, namely tetrapyridyl porphyrin. We have corroborated that the exfoliation of MoS2 in the volatile solvent increases in the presence of the porphyrin due to the different interactions between them, obtaining dispersions with good concentrations. Additionally, the optical properties of the porphyrin are modified by these interactions. The characterization carried out by several techniques supports the hypothesis that the interactions occur through the pyridyl rings of the porphyrin and the molybdenum atoms of the material.
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Affiliation(s)
- Marina Garrido
- Department of Chemical and Pharmaceutical Sciences, Università degli Studi di Trieste, Via Licio Giorgieri 1, Trieste 34127, Italy.
| | - Alejandro Criado
- Universidade da Coruña, CICA - Centro Interdisciplinar de Química e Bioloxía, Rúa as Carballeiras, 15071 A Coruña, Spain.
| | - Maurizio Prato
- Department of Chemical and Pharmaceutical Sciences, Università degli Studi di Trieste, Via Licio Giorgieri 1, Trieste 34127, Italy.
- Center for Cooperative Research in Biomaterials (CIC biomaGUNE), Basque Research and Technology Alliance (BRTA), Paseo de Miramón 194, Donostia-San Sebastián 20014, Spain.
- Ikerbasque, Basque Foundation for Science, Bilbao 48013, Spain
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Milligan GM, Cordova DLM, Yao ZF, Zhi BY, Scammell LR, Aoki T, Arguilla M. Encapsulation of crystalline and amorphous Sb 2S 3 within carbon and boron nitride nanotubes. Chem Sci 2024; 15:10464-10476. [PMID: 38994401 PMCID: PMC11234864 DOI: 10.1039/d4sc01477d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Accepted: 06/02/2024] [Indexed: 07/13/2024] Open
Abstract
The recent rediscovery of 1D and quasi-1D (q-1D) van der Waals (vdW) crystals has laid foundation for the realization of emergent electronic, optical, and quantum-confined physical phenomena in both bulk and at the nanoscale. Of these, the highly anisotropic q-1D vdW crystal structure and the visible-light optical/optoelectronic properties of antimony trisulfide (Sb2S3) have led to its widespread consideration as a promising building block for photovoltaic and non-volatile phase change devices. However, while these applications will greatly benefit from well-defined and sub-nanometer-thick q-1D structures, little has been known about feasible synthetic routes that can access single covalent chains of Sb2S3. In this work, we explore how encapsulation in single or multi-walled carbon nanotubes (SWCNTs or MWCNTs) and visible-range transparent boron nitride nanotubes (BNNTs) influences the growth and phase of Sb2S3 nanostructures. We demonstrate that nanotubes with smaller diameters had a more pronounced effect in the crystallographic growth direction and orientation of Sb2S3 nanostructures, promoting the crystallization of the guest structures along the long-axis [010]-direction. As such, we were able to reliably access well-ordered few to single covalent chains of Sb2S3 when synthesized within defect-free SWCNTs with sub-2 nm inner diameters. Intriguingly, we found that the degree of crystalline order of Sb2S3 nanostructures was strongly influenced by the presence of defects and discontinuities along the Sb2S3-nanotube interface. We show that amorphous nanowire domains of Sb2S3 form around defect sites in larger, multi-walled nanotubes that manifest inner wall defects and discontinuities, suggesting a means to manipulate the crystallization dynamics of confined sub-10 nm-thick Sb2S3 nanostructures within nanotubes. Lastly, we show that ultranarrow amorphous Sb2S3 can impart functionality onto isolable BNNTs with photocurrent generation in the pA range which, alongside the dispersibility of the Sb2S3@BNNTs, could be leveraged to easily fabricate photoresistors only a few nm in width. Altogether, our results serve to solidify the understanding of how q-1D vdW pnictogen chalcogenides crystallize within confined synthetic platforms and are a step towards realizing functional materials from ensembles of encapsulated heterostructures.
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Affiliation(s)
- Griffin M Milligan
- Department of Chemistry, University of California Irvine Irvine California 92697 USA
| | | | - Ze-Fan Yao
- Department of Chemical and Biomolecular Engineering, University of California Irvine Irvine California 92697 USA
| | - Brian Y Zhi
- Department of Chemistry, University of California Irvine Irvine California 92697 USA
| | | | - Toshihiro Aoki
- Irvine Materials Research Institute, University of California Irvine Irvine California 92697 USA
| | - Maxx Arguilla
- Department of Chemistry, University of California Irvine Irvine California 92697 USA
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Kharchich FZ, Castellanos-Gomez A, Frisenda R. Electrical properties of disordered films of van der Waals semiconductor WS 2 on paper. NANOSCALE 2024. [PMID: 38646962 DOI: 10.1039/d3nr06535a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
One of the primary objectives in contemporary electronics is to develop sensors that are not only scalable and cost-effective but also environmentally sustainable. To achieve this goal, numerous experiments have focused on incorporating nanomaterial-based films, which utilize nanoparticles or van der Waals materials, on paper substrates. In this article, we present a novel fabrication technique for producing dry-abraded van der Waals films on paper, demonstrating outstanding electrical characteristics. We assess the quality and uniformity of these films by conducting a spatial resistivity characterization on a 5 × 5 cm2 dry-abraded WS2 film with an average thickness of 25 μm. Employing transfer length measurements with varying channel length-to-width ratios, we extract critical parameters, including sheet resistance and contact resistance. Notably, our findings reveal a resistivity approximately one order of magnitude lower than previous reports. The film's inherent disorder manifests as an asymmetric distribution of resistance values for specific geometries. We explore how this behavior can be effectively modeled through a random resistance network (RRN), which can reproduce the experimentally observed resistance distribution. Finally, we investigate the response of these devices under applied uniaxial strain and apply the RRN model to gain a deeper understanding of this process.
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Affiliation(s)
- Fatima Zahra Kharchich
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy.
- Physics Department, Abdelmalek Essaadi University, M'haneche II, 93002 Tetouan, Morocco
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
| | - Riccardo Frisenda
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy.
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