High-Throughput Mechanical Exfoliation for Low-Cost Production of van der Waals Nanosheets

Edge-Mediated Magnetic Domain Rearrangement in van der Waals Magnet Fe3GaTe2

The emergence of van der Waals (vdW) magnets has opened new frontiers for investigation of 2-dimensional magnetism and application of spintronic memories. However, as the system approached the nanoscale, the edge effect significantly enhanced, posing critical challenges in understanding edge-mediated modifications of magnetic behavior, such as the nanoscale magnetic domain. Here, we employ magnetic force microscopy to systematically investigate edge-mediated magnetic domain rearrangement in Fe3GaTe2 flakes. By performing thermal treatment, we observed a distinct transition from labyrinthine to edge-localized stripe domains perpendicular to the flake edges. Furthermore, we reveal a competition and stabilization between size effect and edge effect by investigating thickness-dependent variation in the length of stripe domains and indicate that such an edge effect suppresses the formation of skyrmions. These findings not only elucidate the critical role of the edge effect in governing the domain morphology of vdW magnets but also provide insights for designing edge-mediated nanostructures in next-generation spintronic devices.

Ion-Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications

With the increasing limitations of conventional computing techniques, particularly the von Neumann bottleneck, the brain's seamless integration of memory and processing through synapses offers a valuable model for technological innovation. Inspired by biological synapse facilitating adaptive, low-power computation by modulating signal transmission via ionic conduction, iontronic synaptic devices have emerged as one of the most promising candidates for neuromorphic computing. Meanwhile, the atomic-scale thickness and tunable electronic properties of van der Waals two-dimensional (2D) materials enable the possibility of designing highly integrated, energy-efficient devices that closely replicate synaptic plasticity. This review comprehensively analyzes advancements in iontronic synaptic devices based on 2D materials, focusing on electron-ion interactions in both iontronic transistors and memristors. The challenges of material stability, scalability, and device integration are evaluated, along with potential solutions and future research directions. By highlighting these developments, this review offers insights into the potential of 2D materials in advancing neuromorphic systems.

Atomically thin 2D materials for solution-processable emerging photovoltaics

Atomically thin 2D materials, such as graphene and graphene oxide, covalent organic frameworks, layered carbides, and metal dichalcogenides, reveal a unique variability of electronic and chemical properties, ensuring their prospects in various energy generation, conversion, and storage applications, including light harvesting in emerging photovoltaic (ePV) devices with organic and perovskite absorbers. Having an extremely high surface area, the 2D materials allow a broad variability of the bandgap and interband transition type, conductivity, charge carrier mobility, and work function through mild chemical modifications, external stimuli, or combination with other 2D species into van-der-Waals heterostructures. This review provides an account of the most prominent "selling points" of atomically thin 2D materials as components of ePV solar cells, including highly tunable charge extraction selectivity and work function, structure-directing and stabilizing effects on halide perovskite light absorbers, as well as broad adaptability of 2D materials to solution-based manufacturing of ePV solar cells using sustainable and upscalable printing technologies. A special focus is placed on the large potential of the materials discovery and design of ePV functionalities based on van-der-Waals stacking of atomically thin 2D building blocks, which can open a vast compositional domain of new materials navigable with machine-learning-based accelerated materials screening.

Bandgap Engineering of 2D Materials toward High-Performing Straintronics

Straintronics leverages mechanical strain to alter the electronic properties of materials, providing an energy-efficient alternative to traditional electronic controls while enhancing device performance. Key to the application of straintronics is bandgap engineering, which enables tuning of the energy difference between the valence and conduction bands of a material to optimize its optoelectronic properties. This mini-review highlights the fundamental principles of straintronics and the critical role of bandgap engineering within this context. It discusses the unique characteristics of various two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), and black phosphorus, which make them suitable for strain-engineered applications. Detailed examples of how mechanical deformation can modulate the bandgap to achieve desired electronic properties are provided, while recent experimental and theoretical studies demonstrating the mechanisms by which strain influences the bandgap in these materials are reviewed, emphasizing their implications for device fabrication. The review concludes with an assessment of the challenges and future directions in the development of high-performing straintronic devices, highlighting their potential applications in flexible electronics, sensors, and optoelectronics.

X-ray photoelectron spectroscopy of high-throughput mechanically exfoliated van der Waals materials

X-ray photoelectron spectroscopy (XPS) is a widely used and easy accessible characterisation technique for investigating the chemical composition of materials. However, investigating the composition of van der Waals (vdW) flakes by XPS is challenging due to the typical spot size of XPS setups compared to the dimensions of the flakes, which are usually one thousand times smaller than the spot size. In this work, we demonstrate the feasibility of quantitative elemental analysis of vdW materials by using high-throughput mechanical exfoliations, which favour the coverage of arbitrary substrates with flakes of areas of the order of the cm2 using minimal quantities of materials (about 10 μg). We have analysed the chemical composition of MoS2, graphite, WSe2 and FePS3. The high-resolution measurement of their main core levels through XPS demonstrates the absence of significant contamination during the transfer method. In the case of air-sensitive FePS3, the glove box fabrication and its degradation in air are discussed. Overall, this research opens the possibility of evaluating the purity of commercial or lab-synthesized flakes and paves the way towards a more systematic comparison between the composition of vdW materials produced and used among different laboratories.

Simultaneous exfoliation and functionalization of MoS2 with tetrapyridyl porphyrin

Molybdenum disulfide (MoS2) attracts the attention of the scientific community due to its thickness dependent properties. To fully exploit these features, it is necessary to produce the material in mono or few-layers on a large scale. Several methodologies have been developed for this purpose, the most promising one being liquid phase exfoliation (LPE). LPE allows obtaining good quality exfoliated MoS2 in a simple and scalable manner. Herein we report the simultaneous exfoliation and functionalization of MoS2 in chloroform using a specific porphyrin, namely tetrapyridyl porphyrin. We have corroborated that the exfoliation of MoS2 in the volatile solvent increases in the presence of the porphyrin due to the different interactions between them, obtaining dispersions with good concentrations. Additionally, the optical properties of the porphyrin are modified by these interactions. The characterization carried out by several techniques supports the hypothesis that the interactions occur through the pyridyl rings of the porphyrin and the molybdenum atoms of the material.

Encapsulation of crystalline and amorphous Sb2S3 within carbon and boron nitride nanotubes

The recent rediscovery of 1D and quasi-1D (q-1D) van der Waals (vdW) crystals has laid foundation for the realization of emergent electronic, optical, and quantum-confined physical phenomena in both bulk and at the nanoscale. Of these, the highly anisotropic q-1D vdW crystal structure and the visible-light optical/optoelectronic properties of antimony trisulfide (Sb2S3) have led to its widespread consideration as a promising building block for photovoltaic and non-volatile phase change devices. However, while these applications will greatly benefit from well-defined and sub-nanometer-thick q-1D structures, little has been known about feasible synthetic routes that can access single covalent chains of Sb2S3. In this work, we explore how encapsulation in single or multi-walled carbon nanotubes (SWCNTs or MWCNTs) and visible-range transparent boron nitride nanotubes (BNNTs) influences the growth and phase of Sb2S3 nanostructures. We demonstrate that nanotubes with smaller diameters had a more pronounced effect in the crystallographic growth direction and orientation of Sb2S3 nanostructures, promoting the crystallization of the guest structures along the long-axis [010]-direction. As such, we were able to reliably access well-ordered few to single covalent chains of Sb2S3 when synthesized within defect-free SWCNTs with sub-2 nm inner diameters. Intriguingly, we found that the degree of crystalline order of Sb2S3 nanostructures was strongly influenced by the presence of defects and discontinuities along the Sb2S3-nanotube interface. We show that amorphous nanowire domains of Sb2S3 form around defect sites in larger, multi-walled nanotubes that manifest inner wall defects and discontinuities, suggesting a means to manipulate the crystallization dynamics of confined sub-10 nm-thick Sb2S3 nanostructures within nanotubes. Lastly, we show that ultranarrow amorphous Sb2S3 can impart functionality onto isolable BNNTs with photocurrent generation in the pA range which, alongside the dispersibility of the Sb2S3@BNNTs, could be leveraged to easily fabricate photoresistors only a few nm in width. Altogether, our results serve to solidify the understanding of how q-1D vdW pnictogen chalcogenides crystallize within confined synthetic platforms and are a step towards realizing functional materials from ensembles of encapsulated heterostructures.

Electrical properties of disordered films of van der Waals semiconductor WS2 on paper

One of the primary objectives in contemporary electronics is to develop sensors that are not only scalable and cost-effective but also environmentally sustainable. To achieve this goal, numerous experiments have focused on incorporating nanomaterial-based films, which utilize nanoparticles or van der Waals materials, on paper substrates. In this article, we present a novel fabrication technique for producing dry-abraded van der Waals films on paper, demonstrating outstanding electrical characteristics. We assess the quality and uniformity of these films by conducting a spatial resistivity characterization on a 5 × 5 cm2 dry-abraded WS2 film with an average thickness of 25 μm. Employing transfer length measurements with varying channel length-to-width ratios, we extract critical parameters, including sheet resistance and contact resistance. Notably, our findings reveal a resistivity approximately one order of magnitude lower than previous reports. The film's inherent disorder manifests as an asymmetric distribution of resistance values for specific geometries. We explore how this behavior can be effectively modeled through a random resistance network (RRN), which can reproduce the experimentally observed resistance distribution. Finally, we investigate the response of these devices under applied uniaxial strain and apply the RRN model to gain a deeper understanding of this process.