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Sahota S, Chircă I, Burton OJ, Yu H, Rimmer M, Yang J, Park K, Summers A, Mertdinc-Ulkuseven S, Lindley M, Haigh SJ, Hofmann S. Se Nanowire Crystal Formation via Oxidation of 2D HfSe 2: A Solid-State, In Situ Reaction Coupling for Heterogeneous Integration Technologies. ACS APPLIED NANO MATERIALS 2025; 8:7608-7615. [PMID: 40271144 PMCID: PMC12012781 DOI: 10.1021/acsanm.5c00308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/15/2025] [Revised: 03/28/2025] [Accepted: 04/01/2025] [Indexed: 04/25/2025]
Abstract
Effective heterogeneous integration of low-dimensional nanomaterials in applications ranging from quantum electronics to biomedical devices requires a detailed understanding of different formation and interfacing reactions and the ability to synergize these processes. We report the formation of 1D Se nanowires via low-temperature (30-150 °C) atmospheric oxidation of 2D HfSe2 crystals. The localized, surface-bound process starting from exfoliated HfSe2 flakes on a SiO2/Si wafer support does not involve wet chemistry and allows us to implement optical operando reaction screening and explore the relevant parameter space and underpinning mechanisms. Hf oxidation frees Se at the buried hafnia-HfSe2 interface, which segregates as amorphous Se, forming aggregates, blisters, and interfacial films. We show that upon diffusion to the stack surface, this Se can crystallize into trigonal Se nanowires with diameters ranging from ∼45 nm to 1.9 μm and lengths up to 43 μm depending on temperature and process time. We discuss the coupled reaction kinetics and pathways for application-relevant integrated process designs and connect diverse literature on the oxidation of transition metal dichalcogenides, Se polymerization and crystallization studies, and prior synthetic strategies for producing Se nanowires.
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Affiliation(s)
- Sunvir Sahota
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Irina Chircă
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Oliver J. Burton
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Hao Yu
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Max Rimmer
- Department
of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
| | - Jinfeng Yang
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Kyungseo Park
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Arthur Summers
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Siddika Mertdinc-Ulkuseven
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
- Metallurgical
and Materials Engineering Department, Istanbul
Technical University, Maslak, Istanbul 34469, Turkey
| | - Matthew Lindley
- Department
of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
| | - Sarah J. Haigh
- Department
of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.
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