1
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Gao Z, Wang P, Chen C, Duan J, Feng S, Liu B. A Novel Pathogen Detection System Combining a Nucleic Acid Extraction Biochip with a Perovskite Photodetector. MICROMACHINES 2025; 16:581. [PMID: 40428707 PMCID: PMC12114132 DOI: 10.3390/mi16050581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/15/2025] [Revised: 05/09/2025] [Accepted: 05/13/2025] [Indexed: 05/29/2025]
Abstract
The increasing spread of infectious diseases caused by pathogenic microorganisms underscores the urgent need for highly sensitive, portable, and rapid nucleic acid detection technologies to facilitate early diagnosis and effective prevention. In this study, we developed a fluorescence-based nucleic acid detection platform that integrates a microfluidic chip with an all-inorganic perovskite photodetector. The system enables integrated operation of nucleic acid extraction, purification, and amplification on a microfluidic chip, combined with real-time electrical signal readout via a CsPbBr3 perovskite photodetector. Experimental results indicate that the photodetector exhibits high responsivity at 530 nm, aligning well with the primary emission peak of FAM. The system demonstrates a strong linear correlation between photocurrent and FAM concentration over the range of 0.01-0.4 μM (R2 = 0.928), with a low detection limit of 0.01 μM and excellent reproducibility across multiple measurements. Validation using FAM standard solutions and Escherichia coli samples confirmed the system's reliable linearity and signal stability. This platform demonstrates strong potential for rapid pathogen screening and point-of-care diagnostic applications.
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Affiliation(s)
- Zhuo Gao
- School of Microelectronics, Shanghai University, Shanghai 201800, China; (Z.G.); (C.C.); (J.D.)
| | - Pan Wang
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
| | - Chang Chen
- School of Microelectronics, Shanghai University, Shanghai 201800, China; (Z.G.); (C.C.); (J.D.)
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
- Institute of Medical Chips, Ruijin Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai 200025, China
| | - Jian Duan
- School of Microelectronics, Shanghai University, Shanghai 201800, China; (Z.G.); (C.C.); (J.D.)
| | - Shilun Feng
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
| | - Bo Liu
- School of Microelectronics, Shanghai University, Shanghai 201800, China; (Z.G.); (C.C.); (J.D.)
- Shanghai Industrial µTechnology Research Institute, Shanghai 201800, China
- Jiaxing Key Laboratory of Biosemiconductors (A), Xiangfu Laboratory, Jiaxing 314102, China
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2
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Nie Y, Jiao S, Yang S, Zhao Y, Gao S, Wang D, Yang X, Li Y, Fu Z, Li A, Wang J, Zhao L. Achieving Ultra-Low Dark Current in β-Ga 2O 3 Photoconductive Photodetectors for Anti-Interference Optical Human-Machine Interaction Systems via Gallium Interstitials Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2501442. [PMID: 40256836 DOI: 10.1002/smll.202501442] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2025] [Revised: 04/03/2025] [Indexed: 04/22/2025]
Abstract
Driven by the demand for high-throughput data transmission, the development of cost-effective and highly sensitive photoconductive photodetectors has become imperative to advance optical communication systems, thereby playing a crucial role in the realm of human-machine interaction. This study presents a β-Ga2O3 photoconductive photodetector employed in an anti-interference optical human-machine interaction system that demonstrates superior responsivity and minimized dark current, attributed to the strategic modulation of intrinsic defects. Through first-principles simulations, the defect dynamics across various growth conditions are systematically elucidated, enabling the precise synthesis of β-Ga2O3 films with markedly diminished shallow-donor gallium interstitials. A super low dark current of 4.15 × 10-12 A is achieved even under 40 V bias, accompanied by high responsivity of 2.26 A·W-1 and superior detectivity realizing of 1.14 × 1014 Jones. Ultimately, β-Ga2O3 photodetector is employed in human-machine interaction systems for robot arm control, which enables the system to demonstrate excellent resistance to random noise, which facilitates the integration of more efficient algorithms. Consequently, the system achieves an 88.46% reduction in reading time and a 78.17% reduction in required storage space, thereby demonstrating the substantial potential of cost-effective, highly sensitive β-Ga2O3 in the era of the Internet of Things.
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Affiliation(s)
- Yiyin Nie
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Shujie Jiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Song Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Yue Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Shiyong Gao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Dongbo Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Xing Yang
- State Key Laboratory of Pulsed Power Laser Technology, Advanced Laser Technology Laboratory of Anhui Province, Jianghuai Advance Technology Center, Hefei, 230037, China
| | - Yongfeng Li
- College of Physics, Jilin University, Changchun, 130012, China
| | - Zhendong Fu
- Tianjin Jinhang Technical Physics Institute, Tianjin, 300308, China
| | - Aimin Li
- Tianjin Jinhang Technical Physics Institute, Tianjin, 300308, China
| | - Jinzhong Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Liancheng Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
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3
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Xiao Y, Luo Z, Qiu Z, Liang Y, Gao W, Yang M, Zhao Y, Zheng Z, Yao J, Li J. Advanced T-In 2Se 3/M-WS 2/B-WSe 2 Photodetectors Enabled by Cascaded Band Tailoring and Charge Reservoir Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2409843. [PMID: 39961068 DOI: 10.1002/smll.202409843] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2024] [Revised: 01/24/2025] [Indexed: 04/03/2025]
Abstract
Taking advantage of their unparalleled electrostatic and optoelectronic properties, 2D layered materials (2DLMs) have emerged as alluring building blocks for crafting advanced photodetectors. Nevertheless, preceding research has predominantly concentrated on rudimentary designs incorporating single-channel or single-junction setups, failing to exert the full potency of 2DLMs. Therefore, there is still an imperative requirement to develop innovative device architectures grounded in novel physical mechanisms. Herein, a T-In2Se3/M-WS2/B-WSe2 heterojunction photodetector boasting pronounced gate-tunability is devised, achieving remarkable light on/off ratio of 5.8 × 104 and detectivity of 1.1 × 1013 Jones at Vgs = -25 V, alongside competitive responsivity and gain of 633 A W-1 and 1943 at Vgs = 30 V. Energy band analysis has determined that the former is associated with the synergy of the cascaded band alignment and the high degree of depletion effect, while the latter is ascribed to the intermediate electron reservoir enabling high-efficiency spacial separation of photoexcited electron-hole pairs. Leveraging this device as the pivotal sensing component, proof-of-concept applications spanning broadband optoelectronic imaging and automatic driving are demonstrated. This study presents a novel paradigm for constructing 2DLM-based photodetectors with outstanding comprehensive performance, thereby establishing a fascinating platform capable of catering to the diverse demands of next-generation optoelectronic industry.
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Affiliation(s)
- Ye Xiao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhanxiong Qiu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Yanwei Liang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, Guangdong, 528200, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, Guangdong, 528200, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
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4
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Lian Y, Jia S, Yu H, Han J, Jiang J, Lan C, Liu X, Liao Y, Dong X, Wang Y, Gou J, Wu Z, Jiang Y, Wang J. Band Alignment Semimetal Heterojunction-Based Ultrabroadband Photodetector for Noncontact Gesture Interaction with Low Latency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2404336. [PMID: 39568288 DOI: 10.1002/adma.202404336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Revised: 11/08/2024] [Indexed: 11/22/2024]
Abstract
Non-contact gesture recognition and interaction (NGRI) revolutionizes the natural user interface, fundamentally transforming human interactions with daily-use technology. Conventional NGRI systems frequently encounter obstacles such as pronounced latency and environmental disturbances, including humidity or lighting conditions, resulting in compromised system fluidity and robustness. This study highlights the utilization of silicon-based semimetal heterojunction photodetectors for precise gesture recognition and seamless human-machine interaction. Through the application of band alignment theory and sophisticated TCAD simulation, heterojunction barriers are successfully optimized by fine-tuning parameters including Si doping concentration and semimetal thickness. By strategically aligning vertical material growth and implementing vertical heterojunction configuration, a room temperature detector with exceptional sensitivity (specific detectivity (D*): ≈1011 Jones), ultra-broad spectral range (405-10600 nm), and rapid response time (≈ µs) is achieved. Harnessing its distinguished speed and sensitivity in detecting human infrared radiation, in conjunction with an advanced spatial-temporal comparison algorithm and a multi-channel high-frequency sampling processing design, a NGRI system with low latency, high precision, minimal energy consumption, and versatility across diverse scenarios has been developed. The results pave the way for non-contact sensor design and may further enhance the practicality and user experience of non-contact human-machine interaction systems.
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Affiliation(s)
- Yunlu Lian
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Shengwang Jia
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - He Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiayue Han
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiamin Jiang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xiaodong Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yulong Liao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xiang Dong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jun Gou
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yadong Jiang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jun Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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5
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Wang T, Cai L, Xia C, Song H, Li L, Bai G, Fu N, Xian L, Yang R, Mu H, Zhang G, Lin S. In Situ Growth of MoS 2 Onto Co-Based MOF Derivatives Toward High-Efficiency Quantum Dot-Sensitized Solar Cells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2406476. [PMID: 39283050 PMCID: PMC11558139 DOI: 10.1002/advs.202406476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Revised: 08/26/2024] [Indexed: 11/14/2024]
Abstract
Quantum dot sensitized solar cells (QDSCs) represent a promising third-generation photovoltaic technology, boasting a high theoretical efficiency of 44% and cost efficiency. However, their practical efficiency is constrained by reduced photovoltage (Voc) and fill factor (FF). One primary reason is the inefficient charge transfer and elevated recombination rates at the counter electrode (CE). In this work, a novel CE composed of a titanium mesh loaded with Co,N─C@MoS2 is introduced for the assembly of QDSCs. The incorporation of nanosized MoS2 enhances the density of catalytic sites, while the Co,N─C component ensures high conductivity and provides a substantial active surface area. Additionally, the titanium mesh's 3D structure serves as an effective electrical conduit, facilitating rapid electron transfer from the external circuit to the composite. These improvements in catalytic activity, charge transfer rate, and stability of the CE significantly enhance the photovoltaic performance of QDSCs. The optimized cells achieve a groundbreaking power conversion efficiency (PCE) of 16.39%, accompanied by a short-circuit current density (Jsc) of 27.26 mA cm-2, Voc of 0.818 V, and FF of 0.735. These results not only offer a new strategy for designing electrodes with high catalytic activity but also underscore the promising application of the Co,N─C@MoS2 composite in enhancing QDSC technology.
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Affiliation(s)
- Tianming Wang
- School of ScienceXi'an Polytechnic UniversityXi'anShanxi710048China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Lejuan Cai
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Caijuan Xia
- School of ScienceXi'an Polytechnic UniversityXi'anShanxi710048China
| | - Han Song
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
- College of Chemistry and Chemical EngineeringXinjiang Normal UniversityXinjiang Uygur Autonomous RegionsUrumqi830054China
| | - Lianbi Li
- School of ScienceXi'an Polytechnic UniversityXi'anShanxi710048China
| | - Gongxun Bai
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang ProvinceChina Jiliang UniversityHangzhou310018China
| | - Nianqing Fu
- School of Materials Science and EngineeringSouth China University of TechnologyGuangzhou510641China
| | - Lede Xian
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Rong Yang
- Changsha Semiconductor Technology and Application Innovation Research InstituteCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Haoran Mu
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Guangyu Zhang
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Shenghuang Lin
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
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6
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Han Y, Bao S, Shi B, Wu J, Wang B, Ding P, Chen Q. Fast and Accurate Recognition of Perovskite Fluorescent Anti-counterfeiting Labels Based on Lightweight Convolutional Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39052538 DOI: 10.1021/acsami.4c06515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Anti-counterfeiting technology has always been a key issue in the field of information security. Physical Unclonable Function (PUF) labels, which are random patterns produced by a stochastic process, emerge as an effective anti-counterfeiting strategy due to the inherent randomness of their physical patterns. In this study, we developed a high-throughput droplet array generation technique based on surface tension confinement to prepare perovskite crystal films with controllable shapes and sizes. We utilized the random distribution of perovskite nanocrystal particles to construct the PUF textures of the labels. Compared to other anti-counterfeiting labels, our labels not only possess fluorescent properties but also feature microscale dimensions (less than 5.3 × 10-2mm2), low cost (less than 3 × 10-4 USD), and high encoding capacity (1.7 × 101956), providing support for multilevel anti-counterfeiting protection. Additionally, we introduce an innovative PUF recognition method based on a Partial Convolutional Network (PaCoNet), effectively addressing the limitations of previous methods, in terms of recognition accuracy and speed. Experimental validation on a data set of perovskite nanocrystal films with up to 60 different macroscopic shapes and unique microscopic textures demonstrates that our method achieves a recognition accuracy of up to 99.65% and significantly reduces the recognition time per image to just 0.177 s, highlighting the potential application of these labels in the field of anti-counterfeiting.
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Affiliation(s)
- Yuexing Han
- School of Computer Engineering and Science, Shanghai University, Shanghai 200444, China
- Key Laboratory of Silicate Cultural Relics Conservation (Shanghai University), Ministry of Education, Shanghai 200444, China
| | - Shengqi Bao
- School of Computer Engineering and Science, Shanghai University, Shanghai 200444, China
| | - Bori Shi
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Jinbo Wu
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
- Faculty of Materials Science, Shenzhen MSU-BIT University, Shenzhen 518000, China
| | - Bing Wang
- School of Computer Engineering and Science, Shanghai University, Shanghai 200444, China
| | - Peng Ding
- Research Center of Nanoscience and Nanotechnology, College of Sciences, Shanghai University, Shanghai 200444, China
| | - Qiaochuan Chen
- School of Computer Engineering and Science, Shanghai University, Shanghai 200444, China
- Key Laboratory of Silicate Cultural Relics Conservation (Shanghai University), Ministry of Education, Shanghai 200444, China
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7
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Yang S, Lin Z, Wang X, Huang J, Yang R, Chen Z, Jia Y, Zeng Z, Cao Z, Zhu H, Hu Y, Li E, Chen H, Wang T, Deng S, Gui X. Stretchable, Transparent, and Ultra-Broadband Terahertz Shielding Thin Films Based on Wrinkled MXene Architectures. NANO-MICRO LETTERS 2024; 16:165. [PMID: 38564038 PMCID: PMC10987438 DOI: 10.1007/s40820-024-01365-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 01/19/2024] [Indexed: 04/04/2024]
Abstract
With the increasing demand for terahertz (THz) technology in security inspection, medical imaging, and flexible electronics, there is a significant need for stretchable and transparent THz electromagnetic interference (EMI) shielding materials. Existing EMI shielding materials, like opaque metals and carbon-based films, face challenges in achieving both high transparency and high shielding efficiency (SE). Here, a wrinkled structure strategy was proposed to construct ultra-thin, stretchable, and transparent terahertz shielding MXene films, which possesses both isotropous wrinkles (height about 50 nm) and periodic wrinkles (height about 500 nm). Compared to flat film, the wrinkled MXene film (8 nm) demonstrates a remarkable 36.5% increase in SE within the THz band. The wrinkled MXene film exhibits an EMI SE of 21.1 dB at the thickness of 100 nm, and an average EMI SE/t of 700 dB μm-1 over the 0.1-10 THz. Theoretical calculations suggest that the wrinkled structure enhances the film's conductivity and surface plasmon resonances, resulting in an improved THz wave absorption. Additionally, the wrinkled structure enhances the MXene films' stretchability and stability. After bending and stretching (at 30% strain) cycles, the average THz transmittance of the wrinkled film is only 0.5% and 2.4%, respectively. The outstanding performances of the wrinkled MXene film make it a promising THz electromagnetic shielding materials for future smart windows and wearable electronics.
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Affiliation(s)
- Shaodian Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
| | - Zhiqiang Lin
- National Key Laboratory of Materials for Integrated Circuits, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Ximiao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
- Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China
| | - Junhua Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
| | - Rongliang Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
| | - Zibo Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
| | - Yi Jia
- China Academy of Aerospace Science and Innovation, Beijing, 100176, People's Republic of China
| | - Zhiping Zeng
- School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
| | - Zhaolong Cao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
- Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China
| | - Hongjia Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China
- Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China
| | - Yougen Hu
- National Key Laboratory of Materials for Integrated Circuits, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Enen Li
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou, 510700, People's Republic of China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou, 510700, People's Republic of China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
- Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China.
| | - Tianwu Wang
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou, 510700, People's Republic of China.
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou, 510700, People's Republic of China.
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
- Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China.
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
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8
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Lian L, Zhang Q, Li W, Wang B, Liang Q. A shadow enabled non-invasive probe for multi-feature intelligent liquid surveillance system. NANOSCALE 2024; 16:1176-1187. [PMID: 38111989 DOI: 10.1039/d3nr04983c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Liquid detection probes used to identify the features of liquids show great promise in a variety of important applications. However, some challenges, such as sample contamination by direct contact with the liquid, the requirement of additional signal emitters, and complex fabrication, hindered the development of liquid detection probes. Here, we developed a non-invasive shadow probe (SP) for a multi-feature intelligent liquid surveillance system (ILSS). The self-powered SP with the working mechanism of the shadow effect can detect the features of liquids by analyzing the variations of liquid shadows such as the area, wavelength, and brightness. The exact resolution (5 different colors, 6 different concentrations, 6 different levels, 100% accuracy) and fast response time (0.2 ms) are shown by the SP under ambient light conditions (even in 0.003 sun). The ILSS, which integrated the SPs with signal processing circuits and applied the artificial intelligence (AI) technique, successfully detects and synoptically learns about liquids simultaneously. The in-real time ILSS reaches a test accuracy of 99.3% for 10 types of liquids with multiple features. This work showcases a promising solution for non-invasive multi-feature liquid detection, displaying great potential for future applications.
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Affiliation(s)
- Lizhen Lian
- School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen 518107, China.
- Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, China.
- School of Physics and Materials Science, Guangzhou University, No. 230, University Town Waihuan West Road, Guangzhou 510006, China.
| | - Qian Zhang
- School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen 518107, China.
| | - Wenbo Li
- Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, China.
| | - Bin Wang
- School of Physics and Materials Science, Guangzhou University, No. 230, University Town Waihuan West Road, Guangzhou 510006, China.
| | - Qijie Liang
- Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, China.
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9
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Ma R, Tan Q, Liu Y, Wang Q. High performance photodetector based on CdS/CdS 0.42Se 0.58nanobelts heterojunction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:125305. [PMID: 38081072 DOI: 10.1088/1361-648x/ad144f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Accepted: 12/11/2023] [Indexed: 12/21/2023]
Abstract
The ternary alloy CdSxSe1-xcombines the physical properties of CdS and CdSe, and its band gap can be adjusted by changing the element composition. The alloy has charming photoelectric properties as well as potential application value in photoelectric devices. In this work, the CdS/CdS0.42Se0.58nanobelt (NB) heterojunction device was prepared by chemical vapor deposition combined with a typical dry transfer technique. The heterojunction photodetector shows high light switching ratio of 6.79 × 104, large spectral responsivity of 1260 A W-1, high external quantum efficiency of 2.66 × 105% and large detectivity of 7.19 × 1015cm Hz1/2W-1under 590 nm illumination and 3 V bias. Its rise and decay time is about 45/90μs. The performance of the heterojunction photodetector was comparable or even better than that of other CdS(Se) based photodetector device. The results indicate that the CdS/CdS0.42Se0.58NB heterojunction possesses a promising potential application in high performance photodetectors.
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Affiliation(s)
- Ran Ma
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| | - Qiuhong Tan
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| | - Yingkai Liu
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| | - Qianjin Wang
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
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Liang H, Ma Y, Yi H, Yao J. Emerging Schemes for Advancing 2D Material Photoconductive-Type Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7372. [PMID: 38068116 PMCID: PMC10707280 DOI: 10.3390/ma16237372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/21/2023] [Accepted: 11/25/2023] [Indexed: 10/16/2024]
Abstract
By virtue of the widely tunable band structure, dangling-bond-free surface, gate electrostatic controllability, excellent flexibility, and high light transmittance, 2D layered materials have shown indisputable application prospects in the field of optoelectronic sensing. However, 2D materials commonly suffer from weak light absorption, limited carrier lifetime, and pronounced interfacial effects, which have led to the necessity for further improvement in the performance of 2D material photodetectors to make them fully competent for the numerous requirements of practical applications. In recent years, researchers have explored multifarious improvement methods for 2D material photodetectors from a variety of perspectives. To promote the further development and innovation of 2D material photodetectors, this review epitomizes the latest research progress in improving the performance of 2D material photodetectors, including improvement in crystalline quality, band engineering, interface passivation, light harvesting enhancement, channel depletion, channel shrinkage, and selective carrier trapping, with the focus on their underlying working mechanisms. In the end, the ongoing challenges in this burgeoning field are underscored, and potential strategies addressing them have been proposed. On the whole, this review sheds light on improving the performance of 2D material photodetectors in the upcoming future.
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Affiliation(s)
| | | | | | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, China; (H.L.); (Y.M.); (H.Y.)
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11
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Zhou Y, Sun H, Guo L, Min L, Wang M, Li L. Emerging Computational Micro-Spectrometers - From Complex System Integration to Simple In Situ Modulation. SMALL METHODS 2023; 7:e2300479. [PMID: 37653642 DOI: 10.1002/smtd.202300479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Revised: 08/04/2023] [Indexed: 09/02/2023]
Abstract
The extensive applications of spectrum analysis across various fields have rendered the traditional desktop spectrometers unable to meet the market demand for portability and instantaneity. Reducing the size of spectrometers has become a topic of interest. Based on this trend, a novel type of computational spectrometer is developed and has been widely studied owing to its unique features. Such spectrometers do not need to integrate complex mechanical or optical structures, and most of them can achieve spectrum analysis by the properties of the material itself combines with the reconstruction algorithm. Impressively, a single-detector computational spectrometer has recently been successfully realized based on in situ modulation of material properties. This not only enables the further miniaturization of the device, but also means that the footprint-resolution limitation which has always existed in the field of hyperspectral imaging has been broken, opening a new era of image analysis. This review summarizes the classifications and principles of various spectrometers, compares the spectrum resolution performances of different types of spectrometers, and highlights the progress of computational spectrometers, especially the revolutionary single-detector spectrometer. It is expected that this review will provide a positive impact on expanding the boundary of spectrum analysis and move hyperspectral imaging forward.
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Affiliation(s)
- Yicheng Zhou
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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Liu L, Ma Y, Wang Y, Ma Q, Wang Z, Yang Z, Wan M, Mahmoudi T, Hahn YB, Mai Y. Hole-Transport Management Enables 23%-Efficient and Stable Inverted Perovskite Solar Cells with 84% Fill Factor. NANO-MICRO LETTERS 2023; 15:117. [PMID: 37121982 PMCID: PMC10149558 DOI: 10.1007/s40820-023-01088-4] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2023] [Accepted: 03/28/2023] [Indexed: 05/03/2023]
Abstract
NiOx-based inverted perovskite solar cells (PSCs) have presented great potential toward low-cost, highly efficient and stable next-generation photovoltaics. However, the presence of energy-level mismatch and contact-interface defects between hole-selective contacts (HSCs) and perovskite-active layer (PAL) still limits device efficiency improvement. Here, we report a graded configuration based on both interface-cascaded structures and p-type molecule-doped composites with two-/three-dimensional formamidinium-based triple-halide perovskites. We find that the interface defects-induced non-radiative recombination presented at HSCs/PAL interfaces is remarkably suppressed because of efficient hole extraction and transport. Moreover, a strong chemical interaction, halogen bonding and coordination bonding are found in the molecule-doped perovskite composites, which significantly suppress the formation of halide vacancy and parasitic metallic lead. As a result, NiOx-based inverted PSCs present a power-conversion-efficiency over 23% with a high fill factor of 0.84 and open-circuit voltage of 1.162 V, which are comparable to the best reported around 1.56-electron volt bandgap perovskites. Furthermore, devices with encapsulation present high operational stability over 1,200 h during T90 lifetime measurement (the time as a function of PCE decreases to 90% of its initial value) under 1-sun illumination in ambient-air conditions.
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Affiliation(s)
- Liming Liu
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Yajie Ma
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Yousheng Wang
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China.
- Guangdong Mellow Energy Co., Ltd., Guangzhou, 510630, People's Republic of China.
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China.
| | - Qiaoyan Ma
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Zixuan Wang
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Zigan Yang
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Meixiu Wan
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Tahmineh Mahmoudi
- School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Jeonbuk National University, 567 Baekjedaero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea
| | - Yoon-Bong Hahn
- School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Jeonbuk National University, 567 Baekjedaero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea
| | - Yaohua Mai
- Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China.
- Guangdong Mellow Energy Co., Ltd., Guangzhou, 510630, People's Republic of China.
- Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China.
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Wang B, Li Y, Zhou M, Han Y, Zhang M, Gao Z, Liu Z, Chen P, Du W, Zhang X, Feng X, Liu BF. Smartphone-based platforms implementing microfluidic detection with image-based artificial intelligence. Nat Commun 2023; 14:1341. [PMID: 36906581 PMCID: PMC10007670 DOI: 10.1038/s41467-023-36017-x] [Citation(s) in RCA: 71] [Impact Index Per Article: 35.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2022] [Accepted: 01/10/2023] [Indexed: 03/13/2023] Open
Abstract
The frequent outbreak of global infectious diseases has prompted the development of rapid and effective diagnostic tools for the early screening of potential patients in point-of-care testing scenarios. With advances in mobile computing power and microfluidic technology, the smartphone-based mobile health platform has drawn significant attention from researchers developing point-of-care testing devices that integrate microfluidic optical detection with artificial intelligence analysis. In this article, we summarize recent progress in these mobile health platforms, including the aspects of microfluidic chips, imaging modalities, supporting components, and the development of software algorithms. We document the application of mobile health platforms in terms of the detection objects, including molecules, viruses, cells, and parasites. Finally, we discuss the prospects for future development of mobile health platforms.
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Affiliation(s)
- Bangfeng Wang
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yiwei Li
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Mengfan Zhou
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yulong Han
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Mingyu Zhang
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhaolong Gao
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zetai Liu
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Peng Chen
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wei Du
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xingcai Zhang
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
| | - Xiaojun Feng
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Bi-Feng Liu
- The Key Laboratory for Biomedical Photonics of MOE at Wuhan National Laboratory for Optoelectronics - Hubei Bioinformatics & Molecular Imaging Key Laboratory, Systems Biology Theme, Department of Biomedical Engineering, College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China.
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