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Wang X, Zeng G, Shen L, Chen W, Du F, Chen YC, Ding ST, Shi CY, Zhang DW, Chen L, Lu HL. Two-dimensional molybdenum ditelluride waveguide-integrated near-infrared photodetector. Nanotechnology 2024; 35:225201. [PMID: 38387089 DOI: 10.1088/1361-6528/ad2c56] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2023] [Accepted: 02/21/2024] [Indexed: 02/24/2024]
Abstract
Low-cost, small-sized, and easy integrated high-performance photodetectors for photonics are still the bottleneck of photonic integrated circuits applications and have attracted increasing attention. The tunable narrow bandgap of two-dimensional (2D) layered molybdenum ditelluride (MoTe2) from ∼0.83 to ∼1.1 eV makes it one of the ideal candidates for near-infrared (NIR) photodetectors. Herein, we demonstrate an excellent waveguide-integrated NIR photodetector by transferring mechanically exfoliated 2D MoTe2onto a silicon nitride (Si3N4) waveguide. The photoconductive photodetector exhibits excellent responsivity (R), detectivity (D*), and external quantum efficiency at 1550 nm and 50 mV, which are 41.9 A W-1, 16.2 × 1010Jones, and 3360%, respectively. These optoelectronic performances are 10.2 times higher than those of the free-space device, revealing that the photoresponse of photodetectors can be enhanced due to the presence of waveguide. Moreover, the photodetector also exhibits competitive performances over a broad wavelength range from 800 to 1000 nm with a highRof 15.4 A W-1and a largeD* of 59.6 × 109Jones. Overall, these results provide an alternative and prospective strategy for high-performance on-chip broadband NIR photodetectors.
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Affiliation(s)
- Xinxue Wang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Lei Shen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Wei Chen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Fanyu Du
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Yu-Chang Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Si-Tong Ding
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Cai-Yu Shi
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Liao Chen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
- Jiashan Fudan Institute, Jiaxing, Zhejiang Province 314100, People's Republic of China
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Xu JY, Yu JS, Liao JH, Yang XB, Wu CY, Wang Y, Wang L, Xie C, Luo LB. Opening the Band Gap of Graphene via Fluorination for High-Performance Dual-Mode Photodetector Application. ACS Appl Mater Interfaces 2019; 11:21702-21710. [PMID: 31120233 DOI: 10.1021/acsami.9b04389] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Fluorination is an effective process to open the band gap of graphene (Gr), which is beneficial to the development of optoelectronic devices working in wide wavelength. Herein, we report a dual-mode broadband photodetector (PD) by integrating fluorinated graphene (F-Gr) with silicon (Si). It is found that when working in photoconductive mode, the F-Gr/Si heterojunction exhibited a remarkable photoresponse over a wide spectral region from ultraviolet (UV), visible to near infrared (NIR) light with a high responsivity ( R) of 1.9 × 107 A W-1 and specific detectivity ( D*) of 4.4 × 1012 Jones at 650 nm. Nonetheless, both parameters will be considerably reduced when the F-Gr/Si heterojunction works in the photodiode mode. In this mode, the Ilight/ Idark ratio is as high as 2.0 × 105 and the response speed is accelerated by more than 3 orders of magnitude from about 5 ms to 6.3 μs. Notably, the responsivity of the device in the UV and NIR regions was remarkably enhanced in comparison with that of pristine Gr/Si-heterojunction-based devices. Considering the F-coverage-dependent band gap of the F-Gr revealed by the first-principle calculations, we believe that the enhancement was ascribed to the opening of the band gap in the partially fluorinated Gr, which is stabilized due to the configuration entropy as the temperature increases. The dual-mode PD enabled the simultaneous weak light detection and fast photodetection, which overcome the limitation of the traditional monomode PD.
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Affiliation(s)
- Ji-Yu Xu
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Ju-Song Yu
- Department of Physics , South China University of Technology , Guangzhou 510640 , Guangdong , China
| | - Ji-Hai Liao
- Department of Physics , South China University of Technology , Guangzhou 510640 , Guangdong , China
| | - Xiao-Bao Yang
- Department of Physics , South China University of Technology , Guangzhou 510640 , Guangdong , China
| | - Chun-Yan Wu
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Yi Wang
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Li Wang
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Chao Xie
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Lin-Bao Luo
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
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