1
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Fu P, Liu M, Ge G, Wan J, Yang X. Carrier modulation of one-dimensional MAPb xSr 1-x(I yCl 1-y) 3 core-shell perovskite nanowires. NANOSCALE 2024; 16:15690-15698. [PMID: 39099400 DOI: 10.1039/d4nr01657b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
Low dimensional hybrid organic-inorganic perovskites (HOIPs) have become one of the most promising materials in solar cells, photodetectors, and lasers due to their low exciton binding energy, high bipolar carrier mobility, and long carrier lifetime. The effective separation and collection of photo-generated electrons and holes have always been crucial for a perovskite as a working medium for optoelectronic devices. However, the surface state of pristine perovskite nanowires causes recombination of electrons and holes at the edge of the energy band, leading to deactivation of charge carriers. In this work, we constructed MAPbxSr1-xI3 core-shell nanowires, which adjust the band gap and control the spatial distribution of charge carriers by changing the Pb composition ratio, achieving spontaneous separation of electron-hole pairs to avoid surface recombination. In addition, MAPbxSr1-x(IyCl1-y)3 core-shell nanowires with different component ratios (x, y) can be constructed by further doping the Cl element, and the spatial distribution of charge carriers in the nanowires can be flexibly manipulated to achieve exchange between type-I and type-II band alignment orders. This study provides a feasible method for enhancing the carrier separation of organic-inorganic hybrid perovskites and improving the performance of optoelectronic devices.
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Affiliation(s)
- Pengjie Fu
- College of Sciences, Shihezi University, Shihezi 832003, China.
| | - Mengni Liu
- College of Sciences, Shihezi University, Shihezi 832003, China.
| | - Guixian Ge
- College of Sciences, Shihezi University, Shihezi 832003, China.
| | - Jianguo Wan
- Department of Physics, Nanjing University, Nanjing 210093, China
| | - Xiaodong Yang
- College of Sciences, Shihezi University, Shihezi 832003, China.
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2
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Dong B, Xie Y, Lou Y. The Effect of Component Defects on the Performance of Perovskite Devices and the Low-Cost Preparation of High-Purity PbI 2. Molecules 2024; 29:3810. [PMID: 39202888 PMCID: PMC11357023 DOI: 10.3390/molecules29163810] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2024] [Revised: 08/06/2024] [Accepted: 08/09/2024] [Indexed: 09/03/2024] Open
Abstract
The efficiency and reproducibility of perovskite solar cells (PSCs) are significantly influenced by the purity of lead iodide (PbI2) in the raw materials used. Pb(OH)I has been identified as the primary impurity generated from PbI2 in water-based synthesis. Consequently, a comprehensive investigation into the impact of Pb(OH)I impurities on film and device performance is essential. In this study, PbI2, with varying stoichiometries, was synthesized to examine the effects of different Pb(OH)I levels on perovskite device performance. The characterization results revealed that even trace amounts of Pb(OH)I impede the formation of precursor prenucleation clusters. These impurities also increase the energy barrier of the α-phase and facilitate the transition of the intermediate phase to the δ-phase. These effects result in poor perovskite film morphology and sub-optimal photovoltaic device performance. To address these issues, a cost-effective method for preparing high-stoichiometry PbI2 was developed. The formation of Pb(OH)I was effectively inhibited through several strategies: adjusting solution pH and temperature, modifying material addition order, simplifying the precipitation-recrystallization process, and introducing H3PO2 as an additive. These modifications enabled the one-step synthesis of high-purity PbI2. PSCs prepared using this newly synthesized high-stoichiometry PbI2 demonstrated photovoltaic performance comparable to those fabricated with commercial PbI2 (purity ≥ 99.999%). Our novel method offers a cost-effective alternative for synthesizing high-stoichiometry PbI2, thereby providing a viable option for the production of high-performance PSCs.
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Affiliation(s)
| | | | - Yongbing Lou
- School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China; (B.D.); (Y.X.)
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3
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Moone PK, Sharifi N. Comparison of Pb-based and Sn-based perovskite solar cells using SCAPS simulation: optimal efficiency of eco-friendly CsSnI 3 devices. ENVIRONMENTAL SCIENCE AND POLLUTION RESEARCH INTERNATIONAL 2024; 31:51447-51460. [PMID: 39107646 DOI: 10.1007/s11356-024-34622-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Accepted: 08/01/2024] [Indexed: 09/06/2024]
Abstract
In this study, we employed the one-dimensional solar cell capacitance simulator (SCAPS-1D) software to optimize the performance of Pb-based and Sn-based (Pb-free) all-inorganic perovskites (AIPs) and organic-inorganic perovskites (OIPs) in perovskite solar cell (PSC) structures. Due to the higher stability of AIPs, the performance of PSCs incorporating Cs-based perovskites was compared with that of FA-based perovskites, which are more stable than their MA-based counterparts. The impact of AIPs such as CsPbCl3, CsPbBr3, CsPbI3, CsSnCl3, CsSnBr3, and CsSnI3, as well as including FAPbCl3, FAPbBr3, FAPbI3, FASnCl3, FASnBr3, and FASnI3, was investigated. SnO2 and Cu2O were selected as an inorganic electron transport layer (ETL) and a hole transport layer (HTL), respectively. CsSnBr₃, CsSnI₃, FASnCl₃, and FASnBr₃ exhibited higher efficiency compared to their Pb-based counterparts. Additionally, most Cs-based perovskites, excluding CsPbI₃, demonstrated better performance relative to their FA counterparts. CsSnI3 AIP device also shows the highest short circuit current density (JSC) of 32.85 mA/cm2, the best power conversion efficiency (PCE) of 16.00%, and the least recombination at the SnO2/CsSnI3 interface. The thickness, doping, and total defect density of CsSnI3 PSC have been systematically investigated and optimized to obtain the PCE of 17.36%. These findings highlight the potential of CsSnI3 PSCs as efficient and environmentally friendly PSCs.
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Affiliation(s)
- Parisa Karimi Moone
- Department of Photonics and Plasma, Faculty of Physics, University of Kashan, Kashan, 87317, Iran
| | - Nafiseh Sharifi
- Department of Photonics and Plasma, Faculty of Physics, University of Kashan, Kashan, 87317, Iran.
- Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, 87317, Iran.
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4
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Tang L, Zeng L, Luo J, Wang W, Xue Z, Luo Z, Yan H, Gong J, Wang S, Li J, Xiao X. All-Round Passivation Strategy Yield Flexible Perovskite/CuInGaSe 2 Tandem Solar Cells with Efficiency Exceeding 26.5. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402480. [PMID: 38657757 DOI: 10.1002/adma.202402480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2024] [Revised: 04/22/2024] [Indexed: 04/26/2024]
Abstract
The perovskite/Cu(InGa)Se2 (CIGS) tandem solar cells (TSCs) presents a compelling technological combination poised for the next generation of flexible and lightweight photovoltaic (PV) tandem devices, featuring a tunable bandgap, high power conversion efficiency (PCE), lightweight flexibility, and enhanced stability and durability. Over the years, the imperative to enhance the performance of wide bandgap (WBG) perovskite solar cells (PSCs) has grown significantly, particularly in the context of a flexible tandem device. In this study, an all-round passivation strategy known as Dual Passivation at Grains and Interfaces (DPGI) is introduced for WBG PSCs in perovskite/CIGS tandem structures. The implementation of DPGI is tailored to improve film crystallinity and passivate defects across the solar cell structure, leading to a substantial performance enhancement for WBG PSCs. Subsequently, both rigid and flexible tandem devices are assembled. Impressively, a fully flexible 4T perovskite/CIGS TSCs is successfully fabricated with a PCE of 26.57%, making it the highest value in this field and highlighting its potential applications in the next generation of flexible lightweight PV tandem devices.
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Affiliation(s)
- Liting Tang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Li Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun Luo
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Wuji Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhuo Xue
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zekai Luo
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Yan
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Junbo Gong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Sheng Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jianmin Li
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xudong Xiao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
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5
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Yang L, Fang Z, Jin Y, Feng H, Deng B, Zheng L, Xu P, Chen J, Chen X, Zhou Y, Shi C, Gao W, Yang J, Xu X, Tian C, Xie L, Wei Z. Suppressing Halide Segregation via Pyridine-Derivative Isomers Enables Efficient 1.68 eV Bandgap Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311923. [PMID: 38400811 DOI: 10.1002/adma.202311923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/29/2024] [Indexed: 02/26/2024]
Abstract
Light-induced phase segregation is one of the main issues restricting the efficiency and stability of wide-bandgap perovskite solar cells (WBG PSCs). Small organic molecules with abundant functional groups can passivate various defects, and therefore suppress the ionic migration channels for phase segregation. Herein, a series of pyridine-derivative isomers containing amino and carboxyl are applied to modify the perovskite surface. The amino, carboxyl, and N-terminal of pyridine in all of these molecules can interact with undercoordinated Pb2+ through coordination bonds and suppress halide ions migration via hydrogen bonding. Among them, the 5-amino-3-pyridine carboxyl acid (APA-3) treated devices win the champion performance, enabling an efficiency of 22.35% (certified 22.17%) using the 1.68 eV perovskite, which represents one of the highest values for WBG-PSCs. This is believed to be due to the more symmetric spatial distribution of the three functional groups of APA-3, which provides a better passivation effect independent of the molecular arrangement orientation. Therefore, the APA-3 passivated perovskite shows the slightest halide segregation, the lowest defect density, and the least nonradiative recombination. Moreover, the APA-3 passivated device retains 90% of the initial efficiency after 985 h of operation at the maximum power point, representing the robust durability of WBG-PSCs under working conditions.
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Affiliation(s)
- Liu Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Zheng Fang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
- MOE Engineering Research Center for Brittle Materials Machining, Institute of Manufacturing Engineering, College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, 361021, China
| | - Yongbin Jin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Huiping Feng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Bingru Deng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Lingfang Zheng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Peng Xu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jingfu Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Xueling Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Yangying Zhou
- China Huaneng Clean Energy Research Institute, Beijing, 102209, China
| | - Congbo Shi
- China Huaneng Clean Energy Research Institute, Beijing, 102209, China
| | - Wei Gao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jinxin Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Xipeng Xu
- MOE Engineering Research Center for Brittle Materials Machining, Institute of Manufacturing Engineering, College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, 361021, China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Liqiang Xie
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
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6
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Liu D, Liang X, Yin X, Yang Y, Wang G, Wang M, Que W. Modulation of Photoinduced Phase Segregation and Stress-Driven Nanoscale Cracking in Hybrid Halide Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38669566 DOI: 10.1021/acsami.4c00292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/28/2024]
Abstract
The negative effect of photoinduced halide segregation (PIHS) on the properties of hybrid halide perovskites poses a major obstacle for its future commercial application. Therefore, the in-depth understanding of halide-ion segregation and its causes is an urgent and intractable problem. When PIHS reaches a certain threshold, it will aggravate the deterioration of the film surface morphology and form nanoscale cracks. Herein, the formation mechanism and types of cracks are revealed by exploring the stress distribution in the film. Using the femtosecond time-resolved transient absorption spectroscopy, the ultrafast formation of the iodine rich phase is observed, which appears earlier than the bromine rich phase. In addition, the introduction of organic ligand didodecyldimethylammonium bromide can significantly inhibit PIHS and improve the surface morphology of the film, which can promote the device efficiency from 9.63 to 11.20%. This work provides a novel perspective for the exploration of the PIHS.
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Affiliation(s)
- Dan Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
| | - Xuanming Liang
- Department of Engineering Mechanics, SVL and MMML, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
| | - Xingtian Yin
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
| | - Yawei Yang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
| | - Gangfeng Wang
- Department of Engineering Mechanics, SVL and MMML, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
| | - Mengrui Wang
- Department of Engineering Mechanics, SVL and MMML, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
| | - Wenxiu Que
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
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7
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Li Y, Wang Y, Xu Z, Peng B, Li X. Key Roles of Interfaces in Inverted Metal-Halide Perovskite Solar Cells. ACS NANO 2024; 18:10688-10725. [PMID: 38600721 DOI: 10.1021/acsnano.3c11642] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Metal-halide perovskite solar cells (PSCs), an emerging technology for transforming solar energy into a clean source of electricity, have reached efficiency levels comparable to those of commercial silicon cells. Compared with other types of PSCs, inverted perovskite solar cells (IPSCs) have shown promise with regard to commercialization due to their facile fabrication and excellent optoelectronic properties. The interlayer interfaces play an important role in the performance of perovskite cells, not only affecting charge transfer and transport, but also acting as a barrier against oxygen and moisture permeation. Herein, we describe and summarize the last three years of studies that summarize the advantages of interface engineering-based advances for the commercialization of IPSCs. This review includes a brief introduction of the structure and working principle of IPSCs, and analyzes how interfaces affect the performance of IPSC devices from the perspective of photovoltaic performance and device lifetime. In addition, a comprehensive summary of various interface engineering approaches to solving these problems and challenges in IPSCs, including the use of interlayers, interface modification, defect passivation, and others, is summarized. Moreover, based upon current developments and breakthroughs, fundamental and engineering perspectives on future commercialization pathways are provided for the innovation and design of next-generation IPSCs.
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Affiliation(s)
- Yue Li
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Yuhua Wang
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Zichao Xu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Bo Peng
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Xifei Li
- Key Materials & Components of Electrical Vehicles for Overseas Expertise Introduction Center for Discipline Innovation, Institute of Advanced Electrochemical Energy & School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
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8
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Nie T, Fang Z, Yang T, Zhao K, Ding J, Liu SF. Anti-Solvent-Free Preparation for Efficient and Photostable Pure-Iodide Wide-Bandgap Perovskite Solar Cells. Angew Chem Int Ed Engl 2024; 63:e202400205. [PMID: 38436587 DOI: 10.1002/anie.202400205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Revised: 03/03/2024] [Accepted: 03/04/2024] [Indexed: 03/05/2024]
Abstract
The perovskite/silicon tandem solar cell (TSC) has attracted tremendous attention due to its potential to breakthrough the theoretical efficiency set for single-junction solar cells. However, the perovskite solar cell (PSC) designed as its top component cell suffers from severe photo-induced halide segregation owing to its mixed-halide strategy for achieving desirable wide-bandgap (1.68 eV). Developing pure-iodide wide-bandgap perovskites is a promising route to fabricate photostable perovskite/silicon TSCs. Here, we report efficient and photostable pure-iodide wide-bandgap PSCs made from an anti-solvent-free (ASF) technique. The ASF process is achieved by mixing two precursor solutions, both of which are capable of depositing corresponding perovskite films without involving anti-solvent. The mixed solution finally forms Cs0.3DMA0.2MA0.5PbI3 perovskite film with a bandgap of 1.68 eV. Furthermore, methylammonium chloride additive is applied to enhance the crystallinity and reduce the trap density of perovskite films. As a result, the pure-iodide wide-bandgap PSC delivers efficiency as high as 21.30 % with excellent photostability, the highest for this type of solar cells. The ASF method significantly improves the device reproducibility as compared with devices made from other anti-solvent methods. Our findings provide a novel recipe to prepare efficient and photostable wide-bandgap PSCs.
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Affiliation(s)
- Ting Nie
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China
| | - Zhimin Fang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China
- Institute of Technology for Carbon Neutralization, Yangzhou University, 225127, Yangzhou, China
| | - Tinghuan Yang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China
| | - Jianning Ding
- Institute of Technology for Carbon Neutralization, Yangzhou University, 225127, Yangzhou, China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, China
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9
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Xu T, Xiang W, Ru X, Wang Z, Liu Y, Li N, Xu H, Liu S. Enhancing Stability and Efficiency of Inverted Inorganic Perovskite Solar Cells with In-Situ Interfacial Cross-Linked Modifier. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312237. [PMID: 38363019 DOI: 10.1002/adma.202312237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 02/03/2024] [Indexed: 02/17/2024]
Abstract
Inverted inorganic perovskite solar cells (PSCs) is potential as the top cells in tandem configurations, owing to the ideal bandgap, good thermal and light stability of inorganic perovskites. However, challenges such as mismatch of energy levels between charge transport layer and perovskite, significant non-radiative recombination caused by surface defects, and poor water stability have led to the urgent need for further improvement in the performance of inverted inorganic PSCs. Herein, the fabrication of efficient and stable CsPbI3-x Brx PSCs through surface treatment of (3-mercaptopropyl) trimethoxysilane (MPTS), is reported. The silane groups in MPTS can in situ crosslink in the presence of moisture to build a 3-dimensional (3D) network by Si-O-Si bonds, which forms a hydrophobic layer on perovskite surface to inhibit water invasion. Additionally, -SH can strongly interact with the undercoordinated Pb2+ at the perovskite surface, effectively minimizing interfacial charge recombination. Consequently, the efficiency of the inverted inorganic PSCs improves dramatically from 19.0% to 21.0% under 100 mW cm-2 illumination with MPTS treatment. Remarkably, perovskite films with crosslinked MPTS exhibit superior stability when soaking in water. The optimized PSC maintains 91% of its initial efficiency after aging 1000 h in ambient atmosphere, and 86% in 800 h of operational stability testing.
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Affiliation(s)
- Tianfei Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Wanchun Xiang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Xiaoning Ru
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, 710018, China
| | - Zezhang Wang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Yali Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Nan Li
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Haojie Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Shengzhong Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
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10
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Yang F, Li Y, Zhang K. Diffusion of Solute Atoms in an Evaporated Liquid Droplet. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:797-804. [PMID: 38113637 DOI: 10.1021/acs.langmuir.3c02993] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Controlling the evaporation of a solvent has made it possible to grow crystals, nanoparticles, and microparticles from liquid droplets. At the heart of this process is the evaporation-induced diffusion of solute atoms, causing the liquid solution of the solute atoms to be in a supersaturated state. In this work, we analyze the mass transport in a spherical liquid droplet, which experiences the loss or evaporation of the solvents across the droplet surface. Using a pseudo-steady-state method, two approximate solutions are derived for the moving boundary problem: one is a linear function of the square of radial variable with a constraint to the loss rate of the solvent, and the other is an exponential function of the square of radial variable without any constraint to the loss rate of the solvent. The numerical results obtained from both approximate solutions are in accord with the numerical results from the finite element method, validating the approximate solutions. The results reveal that a small evaporation/loss rate of the solvent is needed to maintain a relatively uniform distribution of solute atoms in a liquid droplet during the solvent evaporation/loss.
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Affiliation(s)
- Fuqian Yang
- Materials Program, Department of Chemical and Materials Engineering, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Yong Li
- School of Intelligent Manufacturing and Control Engineering, Shanghai Polytechnic University, Shanghai 201209, China
| | - Kai Zhang
- School of Aerospace Engineering and Applied Mechanics, Tongji University, No. 1239 Siping Road, Shanghai 200092, China
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Zhu L, Liu R, Wan Z, Cao W, Dong C, Wang Y, Chen C, Chen J, Naveed F, Kuang J, Lei L, Cheng L, Wang M. Parallel Planar Heterojunction Strategy Enables Sb 2 S 3 Solar Cells with Efficiency Exceeding 8 . Angew Chem Int Ed Engl 2023; 62:e202312951. [PMID: 37904667 DOI: 10.1002/anie.202312951] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 10/30/2023] [Accepted: 10/30/2023] [Indexed: 11/01/2023]
Abstract
Solution-processed solar cells based on inorganic heterojunctions provide a potential approach to the efficient, stable and low-cost solar cells required for the terrestrial generation of photovoltaic energy. Antimony trisulfide (Sb2 S3 ) is a promising photovoltaic absorber. Here, an easily solution-processed parallel planar heterojunction (PPHJ) strategy and related principle are developed to prepare efficient multiple planar heterojunction (PHJ) solar cells, and the PPHJ strategy boosts the efficiency of solution-processed Sb2 S3 solar cells up to 8.32 % that is the highest amongst Sb2 S3 devices. The Sb2 S3 -based PPHJ device consists of two kinds of conventional planar heterojunction (PHJ) subcells in a parallel connection: Sb2 S3 -based PHJ subcells dominating the absorption and charge generation and CH3 NH3 PbI3 -based PHJ subcells governing the electron transport towards collection electrode, but it belongs to an Sb2 S3 device in nature. The resulting PPHJ device combines together the distinctive structural features of Sb2 S3 absorbing layer as a main absorber and the duplexity of well-crystallized/oriented CH3 NH3 PbI3 layer in charge transportation as an additional absorber, while the presence of perovskite does not affect device stability. The PPHJ strategy maintains the facile preparation by the conventional sequential depositions of multiple layers, but eliminates the normal complexity in both tandem and parallel tandem PHJ systems.
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Affiliation(s)
- Liangxin Zhu
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Rong Liu
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhiyang Wan
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Wenbo Cao
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Chao Dong
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Yang Wang
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Chong Chen
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Junwei Chen
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Faisal Naveed
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Jiajin Kuang
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Longhui Lei
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Liquan Cheng
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Mingtai Wang
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
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Goumri-Said S. A Comprehensive Study of Electronic, Optical, and Thermoelectric Characteristics of Cs 2PbI 2Br 2 Inorganic Layered Ruddlesden-Popper Mixed Halide Perovskite through Systematic First-Principles Analysis. ACS OMEGA 2023; 8:38170-38177. [PMID: 37867653 PMCID: PMC10586437 DOI: 10.1021/acsomega.3c04323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Accepted: 09/21/2023] [Indexed: 10/24/2023]
Abstract
In this research, we present a comprehensive study on the influence of layer-dependent structural, electronic, and optical properties in the two-dimensional (2D) Ruddlesden-Popper (RP) perovskite Cs2PbI2Br2. Employing first-principles computations within the density functional theory method, including spin orbit coupling contribution, we examine the impact of various factors on the material. Our results demonstrate that the predicted 2D-layered RP perovskite Cs2PbI2Br2 structures exhibit remarkable stability both structurally and energetically, making them promising candidates for experimental realization. Furthermore, we observe that the electronic band gap and optical absorption coefficients of Cs2PbI2Br2 strongly depend on the thickness variation of the layers. Interestingly, Cs2PbI2Br2 exhibits a notable absorption coefficient in the visible region. Using a combination of density functional theory and Boltzmann transport theory, the thermoelectric properties were forecasted. The calculation involved determining the Seebeck coefficient (S) and other associated thermoelectric characteristics, such as electronic and thermal conductivities, as they vary with the chemical potential at room temperature. These findings open up exciting opportunities for the application of this 2D RP perovskite in solar cells and thermoelectric devices, owing to its unique properties.
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Affiliation(s)
- Souraya Goumri-Said
- Department of Physics, College
of Science and General studies, Alfaisal
University, P.O. Box
5092, Riyadh 11533, Saudi Arabia
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Wargulski DR, Xu K, Hempel H, Flatken MA, Albrecht S, Abou-Ras D. Relationship between the Annealing Temperature and the Presence of PbI 2 Platelets at the Surfaces of Slot-Die-Coated Triple-Halide Perovskite Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:41516-41524. [PMID: 37626018 PMCID: PMC10485798 DOI: 10.1021/acsami.3c07692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Accepted: 08/16/2023] [Indexed: 08/27/2023]
Abstract
We investigated triple-halide perovskite (THP) absorber layers with 5 mol % MAPbCl3 added to the double-halide perovskite (Cs0.22FA0.78)Pb(I0.85Br0.15)3. As a deposition method, a highly scalable printing technique, slot-die coating, with a subsequent annealing step was used. We found a strong power conversion efficiency (PCE) dependence of the corresponding solar cells on the annealing temperature. The device performance deteriorated when increasing the annealing temperature from 125 to 170 °C, mainly via losses in the open-circuit voltage (Voc) and in the fill factor (FF). To understand the mechanisms behind this performance loss, extensive characterizations were performed on both, the THP thin films and the completed solar-cell stacks, as a function of annealing temperature. Correlative scanning electron microscopy analyses, i.e., electron backscatter diffraction, energy-dispersive X-ray spectroscopy, and cathodoluminescence, in addition to X-ray diffraction and photoluminescence, confirmed the presence of PbI2 platelets on the surface of the THP thin films. Moreover, the area fraction of the PbI2 platelets on the film surface increased with increasing annealing temperature. The deteriorated device performance when the annealing temperature is increased from 125 to 170 °C is explained by the increased series resistance and increased interface recombination caused by the PbI2 platelets, leading to decreased Voc and FF values of the solar-cell devices. Thus, the correlative analyses provided insight into microscopic origins of the efficiency losses.
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Affiliation(s)
- Dan R. Wargulski
- Helmholtz-
Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Ke Xu
- Helmholtz-
Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Hannes Hempel
- Helmholtz-
Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Marion A. Flatken
- Helmholtz-
Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Steve Albrecht
- Helmholtz-
Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
- Faculty
of Electrical Engineering and Computer Science, Technische Universität Berlin, 10587 Berlin, Germany
| | - Daniel Abou-Ras
- Helmholtz-
Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
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Chai W, Li L, Zhu W, Chen D, Zhou L, Xi H, Zhang J, Zhang C, Hao Y. Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells. RESEARCH (WASHINGTON, D.C.) 2023; 6:0196. [PMID: 37465160 PMCID: PMC10351391 DOI: 10.34133/research.0196] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 06/25/2023] [Indexed: 07/20/2023]
Abstract
Wide-bandgap (WBG) perovskite solar cells (PSCs) are essential for highly efficient and stable silicon/perovskite tandem solar cells. In this study, we adopted a synthetic strategy with lead thiocyanate (Pb(SCN)2) additive and methylammonium chloride (MACl) posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 eV. The excessive PbI2 was formed at grain boundaries and converted into MAPbI3-xClx perovskites, which are utilized to form the graded heterojunction (GHJ) and compressive strain. This is beneficial for passivating nonradiative recombination defects, suppressing halide phase segregation, and facilitating carrier extraction. Subsequently, the device with GHJ delivered a champion efficiency of 20.30% and superior stability in ambient air and under 85 °C. Finally, we achieved a recorded efficiency of 30.91% for 4-terminal WBG perovskite/TOPCon tandem silicon solar cells. Our findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.
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Affiliation(s)
- Wenming Chai
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Lindong Li
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Weidong Zhu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
- Xi'an Baoxin Solar Technology Co., Ltd., Xi'an, 710071, China
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Dazheng Chen
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
- Xi'an Baoxin Solar Technology Co., Ltd., Xi'an, 710071, China
| | - Long Zhou
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
- Xi'an Baoxin Solar Technology Co., Ltd., Xi'an, 710071, China
| | - He Xi
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Jincheng Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Chunfu Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
- Xi'an Baoxin Solar Technology Co., Ltd., Xi'an, 710071, China
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
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