On the many advantages of local-electrode atom probes

Comparative Apex Electrostatics of Atom Probe Tomography Specimens

Rigorous electrostatic modeling of the specimen-electrode environment is required to better understand the fundamental processes of atom probe tomography (APT) and guide the analysis of APT data. We have developed a simulation tool that self-consistently solves the nonlinear electrostatic Poisson equation along with the mobile charge carrier concentrations and provides a detailed picture of the electrostatic environment of APT specimen tips. We consider cases of metals, semiconductors, and dielectrics. Traditionally in APT, and regardless of specimen composition, the apex electric field E a p e x has been approximated by the relation E a p e x = S V / ( k r ) , which was originally derived for sharp, metallic conductors; we refer to this equation as the "k-factor approximation". Here, S V is tip-electrode bias, r is the radius of curvature of the tip apex, and k is a dimensionless fitting parameter with 1.5 < k < 8.5 . As expected, our Poisson solver agrees well with the k-factor approximation for metal tips; it also agrees remarkably well for semiconductor tips-regardless of the semiconductor doping level. We ascribe this finding to the fact that even if a semiconductor tip is fully depleted of majority carriers under the typical S V conditions used in APT, an inversion layer will appear at the apex surface. The inversion forms a thin, conducting layer that screens the interior of the tip -thus mimicking metallic behavior at the apex surface. By contrast, we find that the k-factor approximation applied to a purely dielectric tip results in k values far greater than the typical range for metallic tips. We put our numerical results into further context with a brief discussion of our own, separate, experimental work and the results of other publications.

Atom probe tomography

Atom probe tomography (APT) provides three-dimensional compositional mapping with sub-nanometre resolution. The sensitivity of APT is in the range of parts per million for all elements, including light elements such as hydrogen, carbon or lithium, enabling unique insights into the composition of performance-enhancing or lifetime-limiting microstructural features and making APT ideally suited to complement electron-based or X-ray-based microscopies and spectroscopies. Here, we provide an introductory overview of APT ranging from its inception as an evolution of field ion microscopy to the most recent developments in specimen preparation, including for nanomaterials. We touch on data reconstruction, analysis and various applications, including in the geosciences and the burgeoning biological sciences. We review the underpinnings of APT performance and discuss both strengths and limitations of APT, including how the community can improve on current shortcomings. Finally, we look forwards to true atomic-scale tomography with the ability to measure the isotopic identity and spatial coordinates of every atom in an ever wider range of materials through new specimen preparation routes, novel laser pulsing and detector technologies, and full interoperability with complementary microscopy techniques.

Dynamic Effects in Voltage Pulsed Atom Probe

Atom probe tomography (APT) is particularly suited for the analysis of nanoscale microstructural features in metallic alloys. APT has become important in the quantitative assessment at high spatial resolution of light elements, which are notoriously difficult to analyze by electron- or X-ray-based techniques. These control the physical properties of high-strength materials and semiconductors. However, the mass spectrometer of state-of-the-art commercial atom probes with the highest spatial precision and detection efficiency are optimized for elements with mass-to-charge ratios corresponding to Fe and neighboring elements. Little is known on the theoretical performances for light elements. Here, we discuss the theoretical instrumental performance of one such instrument using accurate three-dimensional transient electrostatic simulations in a time-varying field approach. We compare the simulations to experimental measurements obtained on an FeBSi bulk-metallic glass. Dynamics effects during the ion's flight are revealed when examining multi-hit mass-to-charge correlations, and we demonstrate their influence on the mass resolution. The model reveals significant differences in ion projection as a function of the mass. We discuss how these chromatic aberrations affect the spatial precision. This approach shows that by tuning the shape of the voltage pulses used to trigger field evaporation, minimizing the influence of these detrimental dynamic effects is possible.

Improving Compositional Accuracy in APT Analysis of Carbides Using a Decreased Detection Efficiency

The composition of carbides in steel, measured by atom probe tomography, can be influenced by limitations in the ion detector system. When carbides are analyzed, many ions tend to field evaporate from the same region of the specimen during the same laser or voltage pulse. This results in a so-called multiple event, meaning that several ions impact the detector in close proximity both in time and space. Due to a finite detector dead-time not all ions can be detected, a phenomenon known as detector pile-up. The evaporation behavior of carbon is often different than the evaporation behavior of metals when analyzing alloy carbides, leading to preferential loss of carbon ions, and a measured carbon concentration below the expected value. This effect becomes stronger as the overall detection efficiency gets higher. Here, the detection efficiency was deliberately reduced by inserting a grid into the flight-path, which resulted in a higher and more correct carbon concentration, accompanied by an increase in the statistical uncertainty.

Electron diffraction and imaging for atom probe tomography

Previous work has shown that pre- and post-experiment quantification of atom probe tomography (APT) specimen geometry using electron microscopy can constrain otherwise unknown parameters, leading to an improvement in data fidelity. To that end, an electron microscopy and diffraction system has been developed for in situ compatibility with modern APT hardware. The system is capable of secondary and backscattered scanning electron imaging, bright field and dark field scanning transmission electron imaging, and scanning transmission electron diffraction. Additionally, the system is also capable of in situ dynamic electron diffraction experiments using laser pulsed heating of the APT specimen.

Atom Probes Leap Ahead

Since early times, the collective understanding of our microscopic universe has been directly tied to the quality of our microscopies. This has been true from the advent of light microscopes through to modern electron microscopes. Indeed, if one is to work on a given scale, one must be able to “see” at that scale. At the beginning of the 21st century, human inquiry is focused on the atomic scale.

Comparing the Consistency of Atom Probe Tomography Measurements of Small-Scale Segregation and Clustering Between the LEAP 3000 and LEAP 5000 Instruments

The local electrode atom probe (LEAP) has become the primary instrument used for atom probe tomography measurements. Recent advances in detector and laser design, together with updated hit detection algorithms, have been incorporated into the latest LEAP 5000 instrument, but the implications of these changes on measurements, particularly the size and chemistry of small clusters and elemental segregations, have not been explored. In this study, we compare data sets from a variety of materials with small-scale chemical heterogeneity using both a LEAP 3000 instrument with 37% detector efficiency and a 532-nm green laser and a new LEAP 5000 instrument with a manufacturer estimated increase to 52% detector efficiency, and a 355-nm ultraviolet laser. In general, it was found that the number of atoms within small clusters or surface segregation increased in the LEAP 5000, as would be expected by the reported increase in detector efficiency from the LEAP 3000 architecture, but subtle differences in chemistry were observed which are attributed to changes in the way multiple hit detection is calculated using the LEAP 5000.

Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing

Atom probe has been developed for investigating materials at the atomic scale and in three dimensions by using either high-voltage (HV) pulses or laser pulses to trigger the field evaporation of surface atoms. In this paper, we propose an atom probe setup with pulsed evaporation achieved by simultaneous application of both methods. This provides a simple way to improve mass resolution without degrading the intrinsic spatial resolution of the instrument. The basic principle of this setup is the combination of both modes, but with a precise control of the delay (at a femtosecond timescale) between voltage and laser pulses. A home-made voltage pulse generator and an air-to-vacuum transmission system are discussed. The shape of the HV pulse presented at the sample apex is experimentally measured. Optimizing the delay between the voltage and the laser pulse improves the mass spectrum quality.

Advancement of Compositional and Microstructural Design of Intermetallic γ-TiAl Based Alloys Determined by Atom Probe Tomography

Advanced intermetallic alloys based on the γ-TiAl phase have become widely regarded as most promising candidates to replace heavier Ni-base superalloys as materials for high-temperature structural components, due to their facilitating properties of high creep and oxidation resistance in combination with a low density. Particularly, recently developed alloying concepts based on a β-solidification pathway, such as the so-called TNM alloy, which are already incorporated in aircraft engines, have emerged offering the advantage of being processible using near-conventional methods and the option to attain balanced mechanical properties via subsequent heat-treatment. Development trends for the improvement of alloying concepts, especially dealing with issues regarding alloying element distribution, nano-scale phase characterization, phase stability, and phase formation mechanisms demand the utilization of high-resolution techniques, mainly due to the multi-phase nature of advanced TiAl alloys. Atom probe tomography (APT) offers unique possibilities of characterizing chemical compositions with a high spatial resolution and has, therefore, been widely used in recent years with the aim of understanding the materials constitution and appearing basic phenomena on the atomic scale and applying these findings to alloy development. This review, thus, aims at summarizing scientific works regarding the application of atom probe tomography towards the understanding and further development of intermetallic TiAl alloys.

Data analysis and other considerations concerning the study of precipitation in Al-Mg-Si alloys by Atom Probe Tomography

Atom Probe Tomography (APT) analysis and hardness measurements were used to characterize the early stages of precipitation in an Al–0.51 at%Mg–0.94 at%Si alloy as reported in the accompanying Acta Materialia paper [1]. The changes in microstructure were investigated after single-stage or multi-stage heat treatments including natural ageing at 298 K (NA), pre-ageing at 353 K (PA), and automotive paint-bake ageing conditions at 453 K (PB). This article provides Supporting information and a detailed report on the experimental conditions and the data analysis methods used for this investigation. Careful design of experimental conditions and analysis methods was carried out to obtain consistent and reliable results. Detailed data on clustering for prolonged NA and PA treatments have been reported.

Preparation of nanowire specimens for laser-assisted atom probe tomography

The availability of reliable and well-engineered commercial instruments and data analysis software has led to development in recent years of robust and ergonomic atom-probe tomographs. Indeed, atom-probe tomography (APT) is now being applied to a broader range of materials classes that involve highly important scientific and technological problems in materials science and engineering. Dual-beam focused-ion beam microscopy and its application to the fabrication of APT microtip specimens have dramatically improved the ability to probe a variety of systems. However, the sample preparation is still challenging especially for emerging nanomaterials such as epitaxial nanowires which typically grow vertically on a substrate through metal-catalyzed vapor phase epitaxy. The size, morphology, density, and sensitivity to radiation damage are the most influential parameters in the preparation of nanowire specimens for APT. In this paper, we describe a step-by-step process methodology to allow a precisely controlled, damage-free transfer of individual, short silicon nanowires onto atom probe microposts. Starting with a dense array of tiny nanowires and using focused ion beam, we employed a sequence of protective layers and markers to identify the nanowire to be transferred and probed while protecting it against Ga ions during lift-off processing and tip sharpening. Based on this approach, high-quality three-dimensional atom-by-atom maps of single aluminum-catalyzed silicon nanowires are obtained using a highly focused ultraviolet laser-assisted local electrode atom probe tomograph.

On the field evaporation behavior of a model Ni-Al-Cr superalloy studied by picosecond pulsed-laser atom-probe tomography

The effects of varying the pulse energy of a picosecond laser used in the pulsed-laser atom-probe (PLAP) tomography of an as-quenched Ni-6.5 Al-9.5 Cr at.% alloy are assessed based on the quality of the mass spectra and the compositional accuracy of the technique. Compared to pulsed-voltage atom-probe tomography, PLAP tomography improves mass resolving power, decreases noise levels, and improves compositional accuracy. Experimental evidence suggests that Ni2+, Al2+, and Cr2+ ions are formed primarily by a thermally activated evaporation process, and not by post-ionization of the ions in the 1+ charge state. An analysis of the detected noise levels reveals that for properly chosen instrument parameters, there is no significant steady-state heating of the Ni-6.5 Al-9.5 Cr at.% tips during PLAP tomography.

Atom probe tomographic studies of precipitation in Al-0.1Zr-0.1Ti (at.%) alloys

Atom probe tomography was utilized to measure directly the chemical compositions of Al(3)(Zr(1)-(x)Ti(x)) precipitates with a metastable L1(2) structure formed in Al-0.1Zr-0.1Ti (at.%) alloys upon aging at 375 degrees C or 425 degrees C. The alloys exhibit an inhomogeneous distribution of Al(3)(Zr(1)-(x)Ti(x)) precipitates, as a result of a nonuniform dendritic distribution of solute atoms after casting. At these aging temperatures, the Zr:Ti atomic ratio in the precipitates is about 10 and 5, respectively, indicating that Ti remains mainly in solid solution rather than partitioning to the Al(3)(Zr(1)-(x)Ti(x)) precipitates. This is interpreted as being due to the very small diffusivity of Ti in alpha-Al, consistent with prior studies on Al-Sc-Ti and Al-Sc-Zr alloys, where the slower diffusing Zr and Ti atoms make up a small fraction of the Al(3)(Zr(1)-(x)Ti(x)) precipitates. Unlike those alloys, however, the present Al-Zr-Ti alloys exhibit no interfacial segregation of Ti at the matrix/precipitate heterophase interface, a result that may be affected by a significant disparity in the evaporation fields of the alpha-Al matrix and Al(3)(Zr(1)-(x)Ti(x)) precipitates and/or a lack of local thermodynamic equilibrium at the interface.

Atom probe analysis of III-V and Si-based semiconductor photovoltaic structures

The applicability of atom probe to the characterization of photovoltaic devices is presented with special emphasis on high efficiency III-V and low cost ITO/a-Si:H heterojunction cells. Laser pulsed atom probe is shown to enable subnanometer chemical and structural depth profiling of interfaces in III-V heterojunction cells. Hydrogen, oxygen, and phosphorus chemical profiling in 5-nm-thick a-Si heterojunction cells is also illustrated, along with compositional analysis of the ITO/a-Si interface. Detection limits of atom probe tomography useful to semiconductor devices are also discussed. Gaining information about interfacial abruptness, roughness, and dopant profiles will allow for the determination of semiconductor conductivity, junction depletion widths, and ultimately photocurrent collection efficiencies and fill factors.

Performance of local electrodes in the local electrode atom probe

The use of a local electrode in atom probe tomography has enabled higher rates of data acquisition and increased field of view compared to other variants of three-dimensional atom probes, but specimen fracture can result in damage to the local electrode. Specimens and local electrodes were examined before and after analyses that resulted in specimen failure. Most specimens were found to be melted after failure and as a result, material was found deposited onto the surface of the local electrode. Material transfer from the specimen to the local electrode was verified by energy dispersive spectrometry in a scanning electron microscope. After the fracture of brittle materials, some remnants were found embedded in the local electrode. For either failure mode, it is likely that the primary specimen rupture produced a sharp protrusion on the specimen or local electrode and this triggered an electrical discharge or uncontrolled field emission that melted a portion of the specimen. The lifetime of the local electrode was found to be dependent on the shape and position of the debris from the specimen failure rather than the number of ions collected or the number of specimens characterized. Local electrodes with smaller apertures were found to be more susceptible to failure.

Comparison of compositional and morphological atom-probe tomography analyses for a multicomponent Fe-Cu steel

A multicomponent Fe-Cu based steel is studied using atom-probe tomography. The precipitates are identified using two different methodologies and subsequent morphological and compositional results are compared. The precipitates are first identified using a maximum separation distance algorithm, the envelope method, and then by a concentration threshold method, an isoconcentration surface. We discuss in detail the proper selection of the parameters needed to delineate precipitates utilizing both methods. The results of the two methods exhibit a difference of 44 identified precipitates, which can be attributed to differences in the basis of both methods and the sensitivity of our results to user-prescribed parameters. The morphology of the precipitates, characterized by four different precipitate radii and precipitate size distribution functions (PSDs), are compared and evaluated. A variation of less than approximately 8% is found between the different radii. Two types of concentration profiles are compared, giving qualitatively similar results. Both profiles show Cu-rich precipitates containing Fe with elevated concentrations of Ni, Al, and Mn near the heterophase interfaces. There are, however, quantitative disagreements due to differences in the basic foundations of the two analysis methods.

Optimisation of a scanning atom probe with improved mass resolution using post deceleration

In this paper, we present calculations and experimental results obtained using post deceleration of ions in a scanning atom probe (SAP) geometry to improve the mass resolution. Various electrode geometries, tip to electrode distances in the range 50-170 microm and three different pulse shapes have been evaluated. Experimental mass resolutions of 750 FWHM and 200 FWTM have been achieved reproducibly for the 184W3+ peak without the use of a reflectron lens. 3D finite element electrostatics software has been used to simulate the ion trajectories through the instrument and thus to calculate the variations in velocities for the different electrode configurations. The observed trends are found to agree well with experimental results.

Invited review article: Atom probe tomography

The technique of atom probe tomography (APT) is reviewed with an emphasis on illustrating what is possible with the technique both now and in the future. APT delivers the highest spatial resolution (sub-0.3-nm) three-dimensional compositional information of any microscopy technique. Recently, APT has changed dramatically with new hardware configurations that greatly simplify the technique and improve the rate of data acquisition. In addition, new methods have been developed to fabricate suitable specimens from new classes of materials. Applications of APT have expanded from structural metals and alloys to thin multilayer films on planar substrates, dielectric films, semiconducting structures and devices, and ceramic materials. This trend toward a broader range of materials and applications is likely to continue.

Observations of Si field evaporation

Field evaporation studies of crystalline <100> Si were performed in a three-dimensional atom-probe, which utilized a local electrode geometry. Several distinct phenomena were observed. Si field evaporation rates showed: (1) no measurable dependence on temperature below 110K, (2) an exponential dependence on evaporation rate as a function of temperature above 110K, and (3) no dependence on substrate doping (i.e., electrical conductivity) as high as 10 Omega cm in the temperature range of 40-150K. Two distinct evaporation modes were observed. The first was associated with approximately 1at% H+ in the mass spectrum. Negligible amounts of H were detected in the mass spectra of the second mode. When the pulse fraction (pf) was increased from 5% to 30%, the presence of H+ in the mass spectra, i.e. operation in the first mode, was associated with a degradation in mass resolution by as much as 80% for the 10 Omega cm Si samples. Conversely, no loss in mass resolution was detected for the approximately 0.001 Omega cm samples over the pf range studied.

In situ site-specific specimen preparation for atom probe tomography

Techniques for the rapid preparation of atom-probe samples extracted directly from a Si wafer are presented and discussed. A systematic mounting process to a standardized microtip array allows approximately 12 samples to be extracted from a near-surface region and mounted for subsequent focused-ion-beam sharpening in a short period of time, about 2h. In addition, site-specific annular mill extraction techniques are demonstrated that allow specific devices or structures to be removed from a Si wafer and analyzed in the atom-probe. The challenges presented by Ga-induced implantation and damage, particularly at a standard ion-beam accelerating voltage of 30 keV, are shown and discussed. A significant reduction in the extent of the damaged regions through the application of a low-energy "clean-up" ion beam is confirmed by atom-probe analysis of the damaged regions. The Ga+ penetration depth into {100} Si at 30 keV is approximately 40 nm. Clean-up with either a 5 or 2 keV beam reduces the depth of damaged Si to approximately 5 nm and <1 nm, respectively. Finally, a NiSi sample was extracted from a Si wafer, mounted to a microtip array, sharpened, cleaned up with a 5 keV beam and analyzed in the atom probe. The current results demonstrate that specific regions of interest can be accessed and preserved throughout the sample-preparation process and that this preparation method leads to high-quality atom probe analysis of such nano-structures.

First data from a commercial local electrode atom probe (LEAP)

The first dedicated local electrode atom probes (LEAP [a trademark of Imago Scientific Instruments Corporation]) have been built and tested as commercial prototypes. Several key performance parameters have been markedly improved relative to conventional three-dimensional atom probe (3DAP) designs. The Imago LEAP can operate at a sustained data collection rate of 1 million atoms/minute. This is some 600 times faster than the next fastest atom probe and large images can be collected in less than 1 h that otherwise would take many days. The field of view of the Imago LEAP is about 40 times larger than conventional 3DAPs. This makes it possible to analyze regions that are about 100 nm diameter by 100 nm deep containing on the order of 50 to 100 million atoms with this instrument. Several example applications that illustrate the advantages of the LEAP for materials analysis are presented.

Atom probe tomography: a technique for nanoscale characterization

Atom probe tomography is a technique for the nanoscale characterization of microstructural features. Analytical techniques have been developed to estimate the size, composition, and other parameters of features as small as 1 nm from the atom probe tomography data. These methods are outlined and illustrated with examples of yttrium-, titanium-, and oxygen-enriched particles in a mechanically alloyed, oxide-dispersion-strengthened steel.

Improvement of the mass resolution of the atom probe using a dual counter-electrode

As compared to other techniques, the mass resolution of the 3D atom probe is rather poor. This low mass resolution derives from the spread in energy of field-evaporated ions. In this work, the single counter-electrode used to remove atoms from the specimen was replaced with a dual counter-electrode. A positive standing voltage V(PA) is applied on the electrode facing the specimen while the second electrode is grounded. As a result, ions experience a post-acceleration between electrodes that lowers energy deficits of ions resulting in an improvement in the mass resolution. This paper reports the study of the resulting improvement in mass resolution as a function of the post-acceleration voltage. It is also shown that, because of the evaporation pulse, ions also undergo a dynamic post-deceleration in the between electrodes. This post-deceleration contributes to the mass resolution increase. Our results show that this very simple device makes it possible to significantly improve the mass resolution of the atom probe. For a low post-acceleration voltage, the mass resolution is 800 FWHM and 200 at full-width tenth-maximum.

Measurements of field enhancement introduced by a local electrode

Direct measurements of field enhancement introduced by a local electrode have been carried out on a scanning atom probe (SAP). The results show that an enhancement factor of more than 2 can be obtained simply by reducing the specimen-to-electrode distance from 1.5 mm to 10 microm. Further enhancement can be achieved if the electrode has a smaller aperture. This suggests that a specimen with tip radius of approximately 200 nm, which usually is too blunt to be analysed in a standard atom probe, could now be analysed by SAP. The capability of analysing blunt tips will expand the applicability of SAP to a much broader range of materials.

Numerical modelling of mass resolution in a scanning atom probe

We have recently suggested a novel method for improving mass resolution in the scanning atom probe (SAP), based on a post-deceleration scheme. A two-conductor counter electrode is used, and the high voltage pulse is applied to the front conductor, with the rear conductor being held at ground. For a separation between the two conductors of 100 microm or less, ions travel between the two while the pulse is essentially constant, so that the ion leaves the counter electrode with an energy equivalent to the applied d.c. potential. In this paper, we have used a numerical model for the electric fields in the SAP to verify the results of the simpler analytical approach used earlier. In particular, the ion acceleration in the vicinity of the tip, previously assumed to be instantaneous, was modelled using a hyperboloidal field approximation. The numerical model was used to calculate the flight time for ions having a range of masses and evaporating over a range of times at the peak of a high voltage pulse. Modelled mass resolutions, calculated in this way, were then compared with analytical expressions, and were found to agree very well. This shows that the earlier assumption of an instantaneous acceleration did not seriously affect the validity of the approach.