Chemical vapor deposition growth of phase-selective inorganic lead halide perovskite films for sensitive photodetectors

Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures

Chiral perovskites have been demonstrated as promising candidates for direct circularly polarized light (CPL) detection due to their intrinsic chirality and excellent charge transport ability. However, chiral perovskite-based CPL detectors with both high distinguishability of left- and right-handed optical signals and low detection limit remain unexplored. Here, a heterostructure, (R-MPA)2 MAPb2 I7 /Si (MPA = methylphenethylamine, MA = methylammonium) is constructed, to achieve high-sensitive and low-limit CPL detection. The heterostructures with high crystalline quality and sharp interface exhibit a strong built-in electric field and a suppressed dark current, not only improving the separation and transport of the photogenerated carriers but also laying a foundation for weak CPL signals detection. Consequently, the heterostructure-based CPL detector obtains a high anisotropy factor up to 0.34 with a remarkably low CPL detection limit of 890 nW cm-2 under the self-driven mode. As a pioneering study, this work paves the way for designing high-sensitive CPL detectors that simultaneously have great distinguishing capability and low detection limit of CPL.

High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes

Photodetectors (PDs) based on two-dimensional (2D) materials have promising applications in modern electronics and optoelectronics. However, due to the intralayer recombination of the photogenerated carriers and the inevitable surface trapping stages of the constituent layers, the PDs based on 2D materials usually suffer from low responsivity and poor response speed. In this work, a distinguished GaN-based photodetector is constructed on a sapphire substrate with Te/metal electrodes. Due to the metal-like properties of tellurium, the band bending at the interface between Te and GaN generates an inherent electric field, which greatly reduces the carrier transport barrier and promotes the photoresponse of GaN. This Te-enhanced GaN-based PD show a promising responsivity of 4951 mA/W, detectivity of 1.79 × 10¹⁴ Jones, and an external quantum efficiency of 169%. In addition, owing to the collection efficiency of carriers by this Te-GaN interface, the response time is greatly decreased compared with pure GaN PDs. This high performance can be attributed to the fact that Te reduces the contact resistance of the metal electrode Au/Ti to GaN, forming an ohmic-like contact and promoting the photoresponse of GaN. This work greatly extends the application potential of GaN in the field of high-performance photodetectors and puts forward a new way of developing high performance photodetectors.

Linear optical afterglow and nonlinear optical harmonic generation from chiral tin(IV) halides: the role of lattice distortions

The striking chemical variability of hybrid organic-inorganic metal halides (HOMHs) endows them with fascinating optoelectronic properties. The inorganic skeletons of HOMHs are often flexible and their lattice deformations could serve as an effective factor for enabling the functionalities of HOMHs. Here, the linear and nonlinear optical properties of zero-dimensional (0D) tin(IV) halides have been tuned by structural distortion facilitated by the chiral amines. Enantiopure α-methylbenzyl ammoniums (XMBA, X = Cl, F) effectively transfer their chirality to the inorganic scaffolds when forming the tin(IV) halides, which enables polar arrangements in their crystals and leads to outstanding second-order nonlinear optical performances. In contrast, the racemic mixture of R- and S-FMBA results in the formation of HOMHs with room temperature phosphorescence. The lower lattice deformation in (rac-FMBA)₂SnCl₆ restrains the non-radiative decay from electron-phonon coupling and facilitates the photoluminescence. Meanwhile, the marked π-π interaction stabilizes the T₁ state for phosphorescent emission. These distinct linear and nonlinear optical properties denote the important role that the lattice distortion plays in tuning the optical properties of low-dimensional HOMHs, and offer a promising perspective of 0D tin(IV) halides for applications in optoelectronic materials and devices.