The Smaller the Better: Hosting Trivalent Rare-Earth Guests in Cu–P Clathrate Cages

ABa6Cu31Te22 (A = K, Rb, Cs) Featuring Polyanionic Copper-Telluride Frameworks with Ultralow Thermal Conductivity

Three polyanionic tellurides, ABa6Cu31Te22 (A = K, Rb, Cs), were synthesized in salt flux. The isostructural tellurides crystallize in a new structure type, in the cubic Pa3 space group with a Wyckoff sequence of d10c2b1 and large unit cell volumes of over 5500 Å3. The structures feature a framework of [CuTe4] tetrahedra and [CuTe3] trigonal pyramids with disorder in the Cu sites. The polyanionic frameworks have large square antiprism and cuboctahedral voids where Ba and alkali metal cations are situated, forming [BaTe8] and [ATe12], respectively. The overall compositions are close to being charge balanced. The large [ATe12] cuboctahedra allowed for significant anisotropic displacement of the A cations, as observed from both single crystal X-ray diffraction and heat capacity studies. Alkali cations rattling together with Cu atom displacement and disorder leads to the dispersion of phonons, thus softening the lattice and subsequently reducing the thermal conductivity. Evaluations of the electronic band structure revealed the occurrence of a narrow bandgap together with the presence of a flat band near the valence band maximum, giving rise to the high thermopower. The Cs and Rb analogues show a slope change in the temperature dependence of electrical resistivity around room temperature, which is typical for semimetals or degenerate semiconductors. For the as-synthesized and unoptimized materials, high values of the thermoelectric figure-of-merit of ∼0.2 were observed at 623 K.

Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope

The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P11 was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P11 were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P11 was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) Å3. The structure differences between violet-P11, violet-P21, and fibrous-P21 are discussed. The violet-P11 crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P11, and exfoliated violet-P11 flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P11 crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P11 bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P11 is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.

Unprecedented mid-infrared nonlinear optical materials achieved by crystal structure engineering, a case study of (KX)P2S6 (X = Sb, Bi, Ba)

Three acentric type-I phase-matchable infrared nonlinear optical materials KSbP2S6, KBiP2S6, and K2BaP2S6, showing excellent balance between the second harmonic generation coefficient, bandgap, and laser damage threshold, were synthesized via a high-temperature solid-state method. KSbP2S6 is isostructural to KBiP2S6, which both crystallize in the β-KSbP2Se6 structure type. K2BaP2S6 was discovered for the first time, which crystallizes in a new structure type. KSbP2S6 and KBiP2S6 exhibit close structural similarity to the parent compound, centrosymmetric Ba2P2S6. The [P2S6] motifs, isotypic to ethane, exist in Ba2P2S6, KSbP2S6, KBiP2S6, and K2BaP2S6. The mixed cations, K/Sb pair, K/Bi pair, and K/Ba pair, play a dual-role of aligning the [P2S6] structure motifs, contributing to a high SHG coefficient, as well as enlarging the bandgap. KSbP2S6, KBiP2S6, and K2BaP2S6 are direct bandgap semiconductors with a bandgap of 2.9(1) eV, 2.3(1) eV and 4.1(1) eV, respectively. KSbP2S6, KBiP2S6, and K2BaP2S6 exhibit a high second harmonic response of 2.2× AgGaS2, 1.8× AgGaS2, and 2.1× AgGaS2, respectively, coupled with a high laser damage threshold of 3× AgGaS2, 3× AgGaS2, and 8× AgGaS2, respectively. The DFT calculations also confirm that the large SHG coefficient mainly originates from [P2S6] anionic motifs.

A2P2S6 (A=Ba, Pb): A Good Platform to Study Polymorph Effect and Lone Pairs Effect to Form Acentric Structure

Three ternary thiophosphates α-Ba2P2S6, β-Ba2P2S6, and Pb2P2S6, were synthesized via a high temperature salt flux method or an I2 transport reaction. β-Ba2P2S6 and Pb2P2S6 were previously structurally characterized without investigating...

Unprecedented superstructure in the type I family of clathrates

The first arsenic-based clathrate exhibiting superstructural ordering due to optimization of Au-As, As-As, and Ba-Au bonding is reported. Ba₈Au₁₆As₃₀ crystallizes in a unique P2₁/c monoclinic clathrate structure. The synthesis, crystal and electronic structure, and transport properties are discussed.

Add a Pinch of Tetrel: The Transformation of a Centrosymmetric Metal into a Nonsymmorphic and Chiral Semiconductor

Centrosymmetric skutterudite RhP₃ was converted to a nonsymmorphic and chiral compound RhSi_0.3P_2.7 (space group P2₁2₁2₁) by means of partial replacement of Si for P. The structure, determined by a combination of X‐ray crystallography and solid state ³¹P NMR, exhibits branched polyanionic P/Si chains that are unique among metal phosphides. A driving force to stabilize the locally noncentrosymmetric cis‐RhSi₂P₄ and fac‐RhSi₃P₃ fragments is π‐electron back‐donation between the Rh t_2g‐type orbitals and the unoccupied antibonding Si/P orbitals, which is more effective for Si than for P. In situ studies and total energy calculations revealed the metastable nature of RhSi_0.3P_2.7. Electronic structure calculations predicted centrosymmetric cubic RhP₃ to be metallic which was confirmed by transport properties measurements. In contrast, the electronic structure for chiral orthorhombic RhSi_0.3P_2.7 contained a bandgap, and this compound was shown to be a narrow gap semiconductor.

Third time's the charm: intricate non-centrosymmetric polymorphism in LnSiP3 (Ln = La and Ce) induced by distortions of phosphorus square layers

Complex polymorphic relationships in the LnSiP3 (Ln = La and Ce) family of compounds are reported. An innovative synthetic method was developed to overcome differences in the reactivities of the rare-earth metal and refractory silicon with phosphorus. Reactions of atomically mixed Ln + Si with P allowed for selective control over the reaction outcomes resulting in targeted isolation of three new polymorphs of LaSiP3 and two polymorphs of CeSiP3. In situ X-ray diffraction studies revealed that the developed method bypasses formation of the thermodynamic dead-end, the binary SiP. Careful re-determination of the crystal structure ruled out the previously reported ordered centrosymmetric structure of CeSiP3 and showed that the main LnSiP3 polymorphs crystallize in the non-centrosymmetric Pna21 and Aea2 space groups featuring distinct distortions of the regular P square net to yield either cis-trans 1D phosphorus chains (Pna21) or disordered-2D phosphorus layers (Aea2). The disordered 2D nature of the P layers in the Aea2 LaSiP3 polymorph was confirmed by Raman spectroscopy. A unique centrosymmetric P21/c polymorph was observed for LaSiP3 and has a completely different crystal structure lacking P layers. Consecutive polymorphic transformations at increasing temperatures for LaSiP3(Pna21 → P21/c → Aea2) were derived from optimized synthetic profiles and confirmed by a combination of phonon computations and experimental in situ and ex situ annealings. Crystal structures of the LaSiP3 polymorphs were verified via advanced solid state NMR analysis using 31P MAS and 31P{139La} double resonance techniques. A combination of phonon and electronic structure calculations, NMR T1 relaxation times, UV/Vis/NIR spectroscopy, and resistivity measurements revealed that all the reported polymorphs are semiconductors with resistivities and thermal conductivities strongly dependent on the degree of distortion of P square layers in the crystal structure. Reported here, non-centrosymmetric LnSiP3 polymorphs with tunable resistivity and thermal conductivity provide a platform for the development of novel functional materials with a wide range of applications.

The role of three-dimensional bulk clusters in determining surface morphologies of intermetallic compounds: Quasicrystals to clathrates

Nanostructured alloy surfaces present unique physical properties and chemical reactivities that are quite different from those of the close-packed low-index surfaces. This can be beneficial for the design of new catalysts and electronic and data-storage devices. However, the growth of such surface nanostructures is not straightforward at the atomic scale. The cluster-based bulk structure of intermetallic compounds presents an original alternative to build surfaces with specific morphologies, in comparison to more traditional methods based on mechanical, chemical, or plasma treatments. It relies on their specific electronic structures-built from a network of bonds with a combination of ionic, covalent-like, and metallic characters, and also depends on the experimental conditions. In this paper, a few surface structures of cluster-based intermetallics are reviewed, with a special emphasis on quasicrystals and clathrates. We show how the intrinsic electronic properties of such compounds, as well as the surface preparation conditions, impact their surface morphologies, which can further influence the growth of atomic and molecular thin films at their surface.

III-V Clathrate Semiconductors with Outstanding Hole Mobility: Cs8In27Sb19 and A8Ga27Sb19 (A = Cs, Rb)

Three novel unconventional clathrates with unprecedented III-V semiconducting frameworks have been synthesized: Cs₈In₂₇Sb₁₉, Cs₈Ga₂₇Sb₁₉, and Rb₈Ga₂₇Sb₁₉. These clathrates represent the first examples of tetrel-free clathrates that are completely composed of main group elements. All title compounds crystallize in an ordered superstructure of clathrate-I in the Ia3̅ space group (No. 206; Z = 8). In the clathrate framework, a full ordering of {Ga or In} and Sb is observed by a combination of high-resolution synchrotron single-crystal and powder X-ray diffraction techniques. Density functional theory (DFT) calculations show that all three clathrates are energetically stable with relaxed lattice constants matching the experimental data. Due to the complexity of the crystal structure composed of heavy elements, the reported clathrates exhibit ultralow thermal conductivities of less than 1 W·m^-1·K^-1 at room temperature. All compounds are predicted and experimentally confirmed to be narrow-bandgap p-type semiconductors with high Seebeck thermopower values, up to 250 μV·K^-1 at 300 K for Cs₈In₂₇Sb₁₉. The latter compound shows carrier concentrations and mobilities, 1.42 × 10¹⁵ cm^-3 and 880 cm² ·V^-1·s^-1, which are on par with the values for parent binary InSb, one of the best electronic semiconductors. The high hole carrier mobility is uncommon for complex bulk materials and a highly desirable trait, opening ways to design semiconducting materials based on tunable III-V clathrates.

Synthesis and structural characterization of the type-I clathrates K8AlxSn46-x and Rb8AlxSn46-x (x ≃ 6.4-9.7)

Exploratory studies in the systems A-Al-Sn (A = K and Rb) yielded the clathrates K₈Al_xSn_46-x (potassium aluminium stannide) and Rb₈Al_xSn_46-x (rubidium aluminium stannide), both with the cubic type-I structure (space group Pm-3n, No. 223; a ≃ 12.0 Å). The Al:Sn ratio is close to the idealized A₈Al₈Sn₃₈ composition and it is shown that it can be varied slightly, in the range of ca ±1.5, depending on the experimental conditions. Both the (Sn,Al)₂₀ and the (Sn,Al)₂₄ cages in the structure are fully occupied by the guest alkali metal atoms, i.e. K or Rb. The A₈Al₈Sn₃₈ formula has a valence electron count that obeys the valence rules and represents an intrinsic semiconductor, while the experimentally determined compositions A₈Al_8±xSn_38∓x suggest the synthesized materials to be nearly charge-balanced Zintl phases, i.e. they are likely to behave as heavily doped p- or n-type semiconductors.

Ba2Si3P6: 1D Nonlinear Optical Material with Thermal Barrier Chains

A novel barium silicon phosphide was synthesized and characterized. Ba₂Si₃P₆ crystallizes in the noncentrosymmetric space group Pna2₁ (No. 33) and exhibits a unique bonding connectivity in the Si-P polyanion not found in other compounds. The crystal structure is composed of SiP₄ tetrahedra connected into one-dimensional double-tetrahedra chains through corner sharing, edge sharing, and covalent P-P bonds. Chains are surrounded by Ba cations to achieve an electron balance. The novel compound exhibits semiconducting properties with a calculated bandgap of 1.6 eV and experimental optical bandgap of 1.88 eV. The complex pseudo-one-dimensional structure manifests itself in the transport and optical properties of Ba₂Si₃P₆, demonstrating ultralow thermal conductivity (0.56 W m^-1 K^-1 at 300 K), promising second harmonic generation signal (0.9 × AgGaS₂), as well as high laser damage threshold (1.6 × AgGaS₂, 48.5 MW/cm²) when compared to the benchmark material AgGaS₂. Differential scanning calorimetry reveals that Ba₂Si₃P₆ melts congruently at 1373 K, suggesting that large single crystal growth may be possible.

Superseding van der Waals with Electrostatic Interactions: Intercalation of Cs into the Interlayer Space of SiAs2

Cs _yM _xSi_{1- x}As₂ (M = Cu, Zn, or Ga; y = 0.15-0.19; x depends on M) represents a new group of pseudo-two-dimensional compounds that allow property tuning with various metal substituents without alteration of the main Si-As two-dimensional framework. Their crystal structure is built from M _xSi_{1- x}As₂ layers separated by disordered chains of Cs cations. These compounds are synthesized using a CsCl flux as a source of Cs, circumventing the need for an expensive and air-sensitive Cs metal reagent. M-Si substitution is required to compensate for the excess electrons donated by Cs cations. Alternatively, the charge compensation can be achieved by the formation of As vacancies. Resistivity measurements confirm the electron-balanced nature of the compounds that exhibit semiconducting behavior with small bandgaps.

Synthesis and Characterization of K and Eu Binary Phosphides

The synthesis, structural characterization, and optical properties of the binary Zintl phases of α-EuP₃, β-EuP₃, EuP₂, and α-K₄P₆ are reported in this study. These crystal structures demonstrate the versatility of P fragments with dimensionality varying from 0D (P₆ rings in α-K₄P₆) to 1D chains (EuP₂) to 2D layers (both EuP₃). EuP₂ is isostructural to previously reported SrP₂ and BaP₂ compounds. The thermal stabilities of the EuP₂ and both EuP₃ phases were determined using differential scanning calorimetry (DSC), with melting temperatures of 1086 K for the diphosphide and 1143 K for the triphosphides. Diffuse reflectance spectroscopy indicated that EuP₂ is an indirect semiconductor with a direct bandgap of 1.12(5) eV and a smaller indirect one, less than 1 eV. Both EuP₃ compounds had bandgaps smaller than 1 eV.