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Biswas A, Maiti R, Lee F, Chen CY, Li T, Puthirath AB, Iyengar SA, Li C, Zhang X, Kannan H, Gray T, Saadi MASR, Elkins J, Birdwell AG, Neupane MR, Shah PB, Ruzmetov DA, Ivanov TG, Vajtai R, Zhao Y, Gaeta AL, Tripathi M, Dalton A, Ajayan PM. Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications. NANOSCALE HORIZONS 2023; 8:641-651. [PMID: 36880586 DOI: 10.1039/d2nh00557c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for "h-BN on demand" under a frugal thermal budget.
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Affiliation(s)
- Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Rishi Maiti
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, 10027, USA.
| | - Frank Lee
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Cecilia Y Chen
- Department of Electrical Engineering, Columbia University, New York, 10027, USA
| | - Tao Li
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Chenxi Li
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Xiang Zhang
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Harikishan Kannan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Tia Gray
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | | | - Jacob Elkins
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - A Glen Birdwell
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Pankaj B Shah
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Dmitry A Ruzmetov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Tony G Ivanov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Yuji Zhao
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Alexander L Gaeta
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, 10027, USA.
- Department of Electrical Engineering, Columbia University, New York, 10027, USA
| | - Manoj Tripathi
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Alan Dalton
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
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Bleu Y, Bourquard F, Tite T, Loir AS, Maddi C, Donnet C, Garrelie F. Review of Graphene Growth From a Solid Carbon Source by Pulsed Laser Deposition (PLD). Front Chem 2018; 6:572. [PMID: 30560117 PMCID: PMC6284203 DOI: 10.3389/fchem.2018.00572] [Citation(s) in RCA: 54] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2018] [Accepted: 11/05/2018] [Indexed: 11/29/2022] Open
Abstract
Graphene is a remarkable two-dimensional (2D) material that is of great interest to both academia and industry. It has outstanding electrical and thermal conductivity and good mechanical behavior with promising applications in electronic devices, supercapacitors, batteries, composite materials, flexible transparent displays, solar cells, and sensors. Several methods have been used to produce either pristine graphene or doped graphene. These include chemical vapor deposition (CVD), mechanical exfoliation, decomposition of SiC, liquid-phase exfoliation, pulsed laser deposition (PLD). Among these methods, PLD, which is routinely used for growing complex oxide thin films has proved to be an alternative to the more widely reported CVD method for producing graphene thin films, because of its advantages. Here we review the synthesis of graphene using PLD. We describe recent progress in preparing pristine graphene and doped graphene by PLD, including deposition processes and characterization. The goal of this complete survey is to describe the advantages of using the technique for graphene growth. The review will also help researchers to better understand graphene synthesis using the PLD technique.
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Affiliation(s)
- Yannick Bleu
- Laboratoire Hubert Curien UMR 5516 CNRS, Université Jean Monnet, University of Lyon, Saint-Étienne, France
| | - Florent Bourquard
- Laboratoire Hubert Curien UMR 5516 CNRS, Université Jean Monnet, University of Lyon, Saint-Étienne, France
| | - Teddy Tite
- Laboratoire Hubert Curien UMR 5516 CNRS, Université Jean Monnet, University of Lyon, Saint-Étienne, France
| | - Anne-Sophie Loir
- Laboratoire Hubert Curien UMR 5516 CNRS, Université Jean Monnet, University of Lyon, Saint-Étienne, France
| | - Chirandjeevi Maddi
- Laboratoire Hubert Curien UMR 5516 CNRS, Université Jean Monnet, University of Lyon, Saint-Étienne, France
| | - Christophe Donnet
- Laboratoire Hubert Curien UMR 5516 CNRS, Université Jean Monnet, University of Lyon, Saint-Étienne, France
| | - Florence Garrelie
- Laboratoire Hubert Curien UMR 5516 CNRS, Université Jean Monnet, University of Lyon, Saint-Étienne, France
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