Economic Evaluation of Two-Step Metallization Processes for Silicon Solar Cells

Low-temperature thermal reduction of graphene oxide nanobrick walls: unique combination of high gas barrier and low resistivity in fully organic polyelectrolyte multilayer thin films

Layer-by-layer assembly from aqueous solutions was used to construct multilayer thin films (<200 nm) comprising polyethylenimine and graphene oxide. Low-temperature (175 °C) thermal reduction of these films improved gas barrier properties (e.g., lower permeability than SiOx), even under high humidity conditions, and enhanced their electrical conductivity to 1750 S/m. The flexible nature of the aforementioned thin films, along with their excellent combination of transport properties, make them ideal candidates for use in a broad range of electronics and packaging applications.

Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu) based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP) process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Given the high percentage of metal cost in cell processing and concerns due to increasing Ag prices, alternative metallization schemes are being considered. Ni-Cu based front side metallization offers potential advantages of finer grid lines, lower series resistance, and reduced costs. A brief overview of various front side patterning techniques is presented. Subsequently, working principle of various plating techniques is discussed. For electroless plated Ni seed layer, fill factor values nearing 80% and efficiencies close to 17.5% have been demonstrated, while for Light Induced Plating deposited layers, an efficiency of 19.2% has been reported. Various methods for qualifying adhesion and long term stability of metal stack are discussed. Adhesion strengths in the range of 1–2.7 N/mm have been obtained for Ni-Cu contacts tabbed with conventional soldering process. Given the significance of metallization properties, different methods for characterization are outlined. The problem of background plating for Ni-Cu based metallization along with the various methods for characterization is summarized. An economic evaluation of front side metallization indicates process cost saving of more than 50% with Ni-Cu-Sn based layers. Recent successful commercialization and demonstration of Ni-Cu based metallization on industrial scale indicate a potential major role of Ni-Cu based contacts in near future.