Large Area Copper Plated Silicon Solar Cell Exceeding 19.5% Efficiency

Laser-Induced Graphene Formation on Polyimide Using UV to Mid-Infrared Laser Radiation

Our study presents laser-assisted methods to produce conductive graphene layers on the polymer surface. Specimens were treated using two different lasers at ambient and nitrogen atmospheres. A solid-state picosecond laser generating 355 nm, 532 nm, or 1064 nm wavelengths and a CO2 laser generating mid-infrared 10.6 µm wavelength radiation operating in a pulsed regime were used in experiments. Sheet resistance measurements and microscopic analysis of treated sample surfaces were made. The chemical structure of laser-treated surfaces was investigated using Raman spectroscopy, and it showed the formation of high-quality few-layer graphene structures on the PI surface. The intensity ratios I(2D)/I(G) and I(D)/I(G) of samples treated with 1064 nm wavelength in nitrogen atmosphere were 0.81 and 0.46, respectively. After laser treatment, a conductive laser-induced graphene layer with a sheet resistance as low as 5 Ω was formed. Further, copper layers with a thickness of 3-10 µm were deposited on laser-formed graphene using a galvanic plating. The techniques of forming a conductive graphene layer on a polymer surface have a great perspective in many fields, especially in advanced electronic applications to fabricate copper tracks on 3D materials.

Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu) based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP) process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Given the high percentage of metal cost in cell processing and concerns due to increasing Ag prices, alternative metallization schemes are being considered. Ni-Cu based front side metallization offers potential advantages of finer grid lines, lower series resistance, and reduced costs. A brief overview of various front side patterning techniques is presented. Subsequently, working principle of various plating techniques is discussed. For electroless plated Ni seed layer, fill factor values nearing 80% and efficiencies close to 17.5% have been demonstrated, while for Light Induced Plating deposited layers, an efficiency of 19.2% has been reported. Various methods for qualifying adhesion and long term stability of metal stack are discussed. Adhesion strengths in the range of 1–2.7 N/mm have been obtained for Ni-Cu contacts tabbed with conventional soldering process. Given the significance of metallization properties, different methods for characterization are outlined. The problem of background plating for Ni-Cu based metallization along with the various methods for characterization is summarized. An economic evaluation of front side metallization indicates process cost saving of more than 50% with Ni-Cu-Sn based layers. Recent successful commercialization and demonstration of Ni-Cu based metallization on industrial scale indicate a potential major role of Ni-Cu based contacts in near future.