2D Bi2Se3 materials for optoelectronics

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni80Fe20/TI (Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si devices

This study demonstrates the fabrication and study of a permalloy (Py)/topological insulator heterojunction, i.e., the Ni80Fe20/TI(Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si heterojunction, for spintronic device applications at room temperature. In this work, the forward current values, under the absence of a magnetic field, for Ni80Fe20/Bi2Te2Se/p-Si, Ni80Fe20/Bi2Se3/p-Si, and Ni80Fe20/Bi2Te3/p-Si heterojunctions were 12.7 μA, 8.7 μA, and 6.85 μA, respectively; while in the presence of a magnetic field, the corresponding values were 10.8 μA, 7.6 μA, and 4.47 μA, respectively. Such reductions in current were attributed to an increase in the resistance of the p-n junction diode due to Lorentz force and a magnetoresistance effect, which was also verified using magneto-transport measurements. This resulted in a modification of the space charge shape and an increase in the potential barrier. Along with this, the magnetic field also affected the diffusion length, leading to a reduction in the current. Such a phenomenon enables the development of durable devices with improved reliability and longevity under harsh environments. The special features of topological edge states in the presence of a magnetic field can be used for sophisticated sensing applications. The future applications will likely lead to the emergence of other novel applications across disciplines such as computing, health, materials science, and energy harvesting.

Review on synthetic approaches and PEC activity performance of bismuth binary and mixed-anion compounds for potential applications in marine engineering

Photoelectrochemical (PEC) technology in marine engineering holds significant importance due to its potential to address various challenges in the marine environment. Currently, PEC-type applications in marine engineering offer numerous benefits, including sustainable energy generation, water desalination and treatment, photodetection, and communication. Finding novel efficient photoresponse semiconductors is of great significance for the development of PEC-type techniques in the marine space. Bismuth-based semiconductor materials possess suitable and tunable bandgap structures, high carrier mobility, low toxicity, and strong oxidation capacity, which gives them great potential for PEC-type applications in marine engineering. In this paper, the structure and properties of bismuth binary and mixed-anion semiconductors have been reviewed. Meanwhile, the recent progress and synthetic approaches were discussed from the point of view of the application prospects. Finally, the issues and challenges of bismuth binary and mixed-anion semiconductors in PEC-type photodetection and hydrogen generation are analyzed. Thus, this perspective will not only stimulate the further investigation and application of bismuth binary and mixed-anion semiconductors in marine engineering but also help related practitioners understand the recent progress and potential applications of bismuth binary and mixed-anion compounds.

The coexistence of high piezoelectricity and superior optical absorption in Janus Bi2X2Y (X = Te, Se; Y = Te, Se, S) monolayers

Bismuth chalcogenide and its derivatives have been attracting attention in various fields as semiconductors or topological insulators. Inspired by the high piezoelectric properties of Janus Bi2TeSeS monolayer and the excellent optical absorption properties of the Bi2X3 (X = Te, Se, S) monolayers, we theoretically predicted four new-type two-dimensional (2D) monolayers Janus Bi2X2Y (X = Te, Se; Y = Te, Se, S) using the first principles combined with density functional theory (DFT). The thermal, dynamic, and mechanical stabilities of Janus Bi2X2Y monolayers were confirmed based on ab initio molecular dynamics (AIMD) simulations, phonon dispersion, and elastic constants calculations. Their elastic properties, band structures, piezoelectric, and optical properties were systematically investigated. It was found that Janus Bi2X2Y monolayers have a typical Mexican hat-shaped valence band edge structure and, therefore, have a ring-shaped flat band edge, which results in their indirect band gaps. The results show that Janus Bi2X2Y monolayers are semiconductors with moderate band gaps (0.62-0.98 eV at the HSE + SOC level). After considering the electron-phonon renormalization (EPR), the band gaps are reduced by less than 5% at 0 K under the zero-point renormalization (ZPR) and further reduced by approximately 10% at 300 K. Besides, Janus Bi2X2Y monolayers also exhibit excellent optical absorption properties in the blue-UV light region, with the peak values at the order of 8 × 105 cm-1. Particularly, the Janus Bi2Te2S monolayer was found to exhibit a piezoelectric strain coefficient d11 of up to 20.30 pm V-1, which is higher than that of most of the 2D materials. Our results indicate that Janus Bi2X2Y monolayers could be promising candidates in solar cells, optical absorption, and optoelectronic devices; especially, a Janus Bi2Te2S monolayer can also be an excellent piezoelectric material with great prospects in the fields of mechanical and electrical energy conversion.

Unveiling Local Optical Properties Using Nanoimaging Phase Mapping in High-Index Topological Insulator Bi2Se3 Resonant Nanostructures

Topological insulators are materials characterized by an insulating bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic properties have been extensively studied, their mid-infrared (MIR) properties and prospective photonic capabilities have not been fully uncovered. Here, we use a combination of far-field and near-field nanoscale imaging and spectroscopy to study chemical vapor deposition-grown Bi2Se3 nanobeams (NBs). We extract the MIR optical constants of Bi2Se3, revealing refractive index values as high as n ∼ 6.4, and demonstrate that the NBs support Mie resonances across the MIR. Local near-field reflection phase mapping reveals domains of various phase shifts, providing information on the local optical properties of the NBs. We experimentally measure up to 2π phase-shift across the resonance, in excellent agreement with finite-difference time-domain simulations. This work highlights the potential of Bi2Se3 for quantum circuitry, nonlinear generation, high-Q metaphotonics, and photodetection.

Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability

The topological insulator 2D Bi₂Se₃ is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi₂Se₃ is prone to oxidation. Surface passivation using ligand agents after Bi₂Se₃ exfoliation works well to protect the surface, but the process is time-consuming and technically challenging; a passivation agent that is stable under a highly biased potential is significant for in situ passivation of the Bi₂Se₃ surface. In this work, the roles of halide anions (Cl^-, Br^-, and I^-) in respect of the chemical properties of synthetic Bi₂Se₃ nanosheets during electrochemical intercalated exfoliation were investigated to determine the antioxidation capacity. It was found that Bi₂Se₃ nanosheets prepared in a solution of tetrabutylammonium chloride (TBA⁺ and Cl^-) have the best oxidation resistance via the surface bonding of Bi with Cl, which promotes obtaining better device stability. This work paves an avenue for adjusting the components of the electrolyte to further promote the stability of 2D Bi₂Se₃-nanosheet-based electronic devices.

Fabrication, characterization and optical properties of Au-decorated Bi2Se3 nanoplatelets

Au-decorated Bi₂Se₃ nanoplatelet heterostructures are fabricated by a two-step process of thermal CVD at 600 °C and magnetron sputtering at room-temperature. The crystal structures and binding energies of rhombohedral Bi₂Se₃ and FCC Au are determined by XRD, HRTEM, XPS, and Raman spectroscopy. XPS and Raman spectroscopy reveal the interaction between Au and Bi₂Se₃ by shifting in the binding energies of Au-Au, Au-Se and Bi-Se bonds and the wavenumber of A_1g² and E_g² modes. Au-decorated Bi₂Se₃ nanoplatelet heterostructures are observed using FESEM, and confirmed by XPS, Raman spectroscopy, and HRTEM imaging. Their optical band gap of the Au-decorated Bi₂Se₃ nanoplatelet heterostructures increases with Au thickness about 1.92-fold as much as that of pristine Bi₂Se₃ (0.39 eV), owing to the Burstein-Moss effect. The optical absorptance of the Au-decorated Bi₂Se₃ nanoplatelet heterostructures revealed increment with wavelength from 200 to 500 nm and decrement with increasing wavelength from 500 to 800 nm.