Interlaboratory study on Sb2S3 interplay between structure, dielectric function, and amorphous-to-crystalline phase change for photonics

Heterovalent-Doped Sb2S3 Glass for Large-Area Sensitive X-ray Detection and Imaging

Flat-panel X-ray detectors are indispensable in a variety of imaging applications ranging from medical radiography to industrial inspections. Current commercial detectors (α-Se/CdTe) suffer from unsatisfactory image contrast and high-dose X-ray exposure owing to the limited attenuation and charge collection. Here, we show that heterovalent-doped Sb2S3 glass (α-Sb2S3) can effectively convert X-ray photons to electrical current signals. SnI2 doping modifies the Sb-S network and stabilizes the noncrystalline structure, enabling bulk α-Sb2S3 with a narrow bandgap (1.66 eV), large mobility-lifetime product (5.6 × 10-5 cm2 V-1), and strong radiation attenuation capacity simultaneously. The α-Sb2S3-based detector exhibits a high sensitivity of 4397 μC Gy1- cm-2, a low detection limit of 66 nGy s-1, and excellent stability. Thermally evaporated α-Sb2S3 on a pixelated thin film transistor (TFT) backplane enables high-resolution X-ray imaging. This is the first demonstration of Sb2S3-based X-ray detection and imaging, creating new possibilities for the development of amorphous semiconducting materials and devices.

Structural and vibrational properties of Sb2S3: Practical methodologies for accelerated research and application of this low dimensional material

Recently, the interest for the family of low dimensional materials has increased significantly due to the anisotropic nature of their fundamental properties. Among them, antimony sulfide (Sb2S3) is considered a suitable material for various solid-state devices. Although the main advantages and physicochemical properties of Sb2S3 are known, some doubtful information remains in literature and methodologies to easily assess its critical properties are missing. In this study, an advanced characterization of several types of Sb2S3 samples, involving the Rietveld refinement of structural properties, and Raman spectroscopy analysis, completed with lattice dynamics investigations reveal important insights into the structural and vibrational characteristics of the material. Based on the gathered data, fast, non-destructive, and non-invasive methodologies for assessment of the crystallographic orientation and point defect concentration of Sb2S3 are proposed. With a high resolution in-sample and in-situ assessment, these methodologies will serve for accelerating the research and application of Sb2S3 in the research field.

Optimized wideband and compact multifunctional photonic device based on Sb2S3 phase change material

In this paper, a 1 × 2 photonic switch is designed based on a silicon-on-insulator (SOI) platform combined with the phase change material (PCM), Sb2S3, assisted by the direct binary search (DBS) algorithm. The designed photonic switch exhibits an impressive operating bandwidth ranging from 1450 to 1650 nm. The device has an insertion loss (IL) from 0.44 dB to 0.70 dB (of less than 0.7 dB) and cross talk (CT) from -26 dB to -20 dB (of less than -20 dB) over an operating bandwidth of 200 nm, especially an IL of 0.52 dB and CT of -24 dB at 1550 nm. Notably, the device is highly compact, with footprints of merely 3 × 4 µm2. Furthermore, we have extended the device's functionality for multifunctional operation in the C-band that can serve as both a 1 × 2 photonic switch and a 3 dB photonic power splitter. In the photonic switch mode, the device demonstrates an IL of 0.7 dB and a CT of -13.5 dB. In addition, when operating as a 3 dB photonic power splitter, the IL is less than 0.5 dB.

Roadmap for phase change materials in photonics and beyond

Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.

Sb2S3 Thin-Film Solar Cells Fabricated from an Antimony Ethyl Xanthate Based Precursor in Air

The rapidly expanding demand for photovoltaics (PVs) requires stable, quick, and easy to manufacture solar cells based on socioeconomically and ecologically viable earth-abundant resources. Sb2S3 has been a potential candidate for solar PVs and the efficiency of planar Sb2S3 thin-film solar cells has witnessed a reasonable rise from 5.77% in 2014 to 8% in 2022. Herein, the aim is to bring new insight into Sb2S3 solar cell research by investigating how the bulk and surface properties of the Sb2S3 absorber and the current-voltage and deep-level defect characteristics of solar cells based on these films are affected by the ultrasonic spray pyrolysis deposition temperature and the molar ratio of thiourea to SbEX in solution. The properties of the Sb2S3 absorber are characterized by bulk- and surface-sensitive methods. Solar cells are characterized by temperature-dependent current-voltage, external quantum efficiency, and deep-level transient spectroscopy measurements. In this paper, the first thin-film solar cells based on a planar Sb2S3 absorber grown from antimony ethyl xanthate (SbEX) by ultrasonic spray pyrolysis in air are demonstrated. Devices based on the Sb2S3 absorber grown at 200 °C, especially from a solution of thiourea and SbEX in a molar ratio of 4.5, perform the best by virtue of suppressed surface oxidation of Sb2S3, favorable band alignment, Sb-vacancy concentration, a continuous film morphology, and a suitable film thickness of 75 nm, achieving up to 4.1% power conversion efficiency, which is the best efficiency to date for planar Sb2S3 solar cells grown from xanthate-based precursors. Our findings highlight the importance of developing synthesis conditions to achieve the best solar cell device performance for an Sb2S3 absorber layer pertaining to the chosen deposition method, experimental setup, and precursors.

Synthesis of Sb2S3 nanosphere layer by chemical bath deposition for the photocatalytic degradation of methylene blue dye

An antimony tri-sulfide Sb₂S₃ nanosphere photocatalyst was effectively deposited utilizing sodium thiosulfate and antimony chloride as the starting precursors in a chemical bath deposition process. This approach is appropriate for the large-area depositions of Sb₂S₃ at low deposition temperatures without the sulfurization process since it is based on the hydrolytic decomposition of starting compounds in aqueous solution. X-ray diffraction patterns and Raman spectroscopy analysis revealed the formation of amorphous Sb₂S₃ layers. The scanning electron microscopy images revealed that the deposited Sb₂S₃ has integrated small nanospheres into sub-microspheres with a significant surface area, resulting in increased photocatalytic activity. The optical direct bandgap of the Sb₂S₃ layer was estimated to be about 2.53 eV, making amorphous Sb₂S₃ appropriate for the photodegradation of organic pollutants in the presence of solar light. The possibility of using the prepared Sb₂S₃ layer in the photodegradation of methylene blue aqueous solutions was investigated. The degradation of methylene blue dye was performed to evaluate the photocatalytic property of Sb₂S₃ under visible light. The amorphous Sb₂S₃ exhibited photocatalytic activity for the decolorization of methylene blue solution under visible light. The mechanism for the photocatalytic degradation of methylene blue has been proposed. Our results suggest that the amorphous Sb₂S₃ nanospheres are valuable material for addressing environmental remediation issues.

Non-volatile electrically programmable integrated photonics with a 5-bit operation

Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb₂S₃)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb₂S₃-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of [Formula: see text]. Remarkably, Sb₂S₃ is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

Integrated programmable spectral filter for frequency-multiplexed neuromorphic computers

Artificial neural networks (ANN) are a groundbreaking technology massively employed in a plethora of fields. Currently, ANNs are mostly implemented through electronic digital computers, but analog photonic implementations are very interesting mainly because of low power consumption and high bandwidth. We recently demonstrated a photonic neuromorphic computing system based on frequency multiplexing that executes ANNs algorithms as reservoir computing and Extreme Learning Machines. Neuron signals are encoded in the amplitude of the lines of a frequency comb, and neuron interconnections are realized through frequency-domain interference. Here we present an integrated programmable spectral filter designed to manipulate the optical frequency comb in our frequency multiplexing neuromorphic computing platform. The programmable filter controls the attenuation of 16 independent wavelength channels with a 20 GHz spacing. We discuss the design and the results of the chip characterization, and we preliminary demonstrate, through a numerical simulation, that the produced chip is suitable for the envisioned neuromorphic computing application.

On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials

Reconfigurable mode converters are essential components in efficient higher-order mode sources for on-chip multimode applications. We propose an on-chip reconfigurable silicon waveguide mode conversion scheme based on the nonvolatile and low-loss optical phase change material antimony triselenide (Sb₂Se₃). The key mode conversion region is formed by embedding a tapered Sb₂Se₃ layer into the silicon waveguide along the propagation direction and further cladding with graphene and aluminum oxide layers as the microheater. The proposed device can achieve the TE₀-to-TE₁ mode conversion and reconfigurable conversion (no mode conversion) depending on the phase state of embedded Sb₂Se₃ layer, whereas such function could not be realized according to previous reports. The proposed device length is only 2.3 μm with conversion efficiency (CE) = 97.5%, insertion loss (IL) = 0.2 dB, and mode crosstalk (CT) = -20.5 dB. Furthermore, the proposed device scheme can be extended to achieve other reconfigurable higher-order mode conversions. We believe the proposed reconfigurable mode conversion scheme and related devices could serve as the fundamental building blocks to provide higher-order mode sources for on-chip multimode photonics.

Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile [Formula: see text] phase change material

A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize [Formula: see text] optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the [Formula: see text] to be 3.4 x [Formula: see text] and 0.1 x 10[Formula: see text], respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure ([Formula: see text] to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x [Formula: see text] to [Formula: see text] x 10[Formula: see text]. This work experimentally verifies optical phase modifications and permanent trimming of [Formula: see text], enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit.

Plasmonic hot-electron reconfigurable photodetector based on phase-change material Sb2S3

Hot-carrier based photodetectors and enhanced by surface plasmons (SPs) hot-electron injection into semiconductors, are drawing significant attention. This photodetecting strategy yields to narrowband photoresponse while enabling photodetection at sub-bandgap energies of the semiconductor materials. In this work, we analyze the design of a reconfigurable photodetector based on a metal-semiconductor (MS) configuration with interdigitated dual-comb Au electrodes deposited on the semiconducting Sb₂S₃ phase-change material. The reconfigurability of the device relies on the changes of refractive index between the amorphous and crystalline phases of Sb₂S₃ that entail a modulation of the properties of the SPs generated at the dual-comb Au electrodes. An exhaustive numerical study has been realized on the Au grating parameters formed by the dual-comb electrodes, and on the SP order with the purpose of optimizing the absorption of the device, and thus, the responsivity of the photodetector. The optimized photodetector layout proposed here enables tunable narrowband photodetection from the O telecom band (λ = 1310 nm) to the C telecom band (λ = 1550 nm).

Compact nonvolatile 2×2 photonic switch based on two-mode interference

On-chip nonvolatile photonic switches enabled by phase change materials (PCMs) are promising building blocks for power-efficient programmable photonic integrated circuits. However, large absorption loss in conventional PCMs (such as Ge₂Sb₂Te₅) interacting with weak evanescent waves in silicon waveguides usually leads to high insertion loss and a large device footprint. In this paper, we propose a 2×2 photonic switch based on two-mode interference in a multimode slot waveguide (MSW) with ultralow loss Sb₂S₃ integrated inside the slot region. The MSW supports two lowest order TE modes, i.e., symmetric TE₀₀ and antisymmetric TE₀₁ modes, and the phase of Sb₂S₃ could actively tune two-mode interference behavior. Owing to the enhanced electric field in the slot, the interaction strength between modal field and Sb₂S₃ could be boosted, and a photonic switch containing a ∼9.4 µm-long Sb₂S₃-MSW hybrid section could effectively alter the light transmission between bar and cross ports upon the phase change of Sb₂S₃ with a cross talk (CT) less than -13.6 dB and an insertion loss (IL) less than 0.26 dB in the telecommunication C-band. Especially at 1550 nm, the CT in the amorphous (crystalline) Sb₂S₃ is -36.1 dB (-31.1 dB) with a corresponding IL of 0.073 dB (0.055 dB). The proposed 2×2 photonic switch is compact in size and compatible with on-chip microheaters, which may find promising applications in reconfigurable photonic devices.