Structural and elemental analysis of iron and indium doped zinc oxide by spectroscopic imaging in Cs-corrected STEM

Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO

The maximum efficiency of solar cells utilizing a single layer for photovoltaic conversion is given by the single junction Shockley-Queisser limit. In tandem solar cells, a stack of materials with different band gaps contribute to the conversion, enabling tandem cells to exceed the single junction Shockley-Queisser limit. An intriguing variant of this approach is to embed semiconducting nanoparticles in a transparent conducting oxide (TCO) solar cell front contact. This alternative route would enhance the functionality of the TCO layer, allowing it to participate directly in photovoltaic conversion via photon absorption and charge carrier generation in the nanoparticles. Here, we demonstrate the functionalization of ZnO through incorporation of either ZnFe2O4 spinel nanoparticles (NPs) or inversion domain boundaries (IDBs) decorated by Fe. Diffuse reflectance spectroscopy and electron energy loss spectroscopy show that samples containing spinel particles and samples containing IDBs decorated by Fe both display enhanced absorption in the visible range at around 2.0 and 2.6 eV. This striking functional similarity was attributed to the local structural similarity around Fe-ions in spinel ZnFe2O4 and at Fe-decorated basal IDBs. Hence, functional properties of the ZnFe2O4 arise already for the two-dimensional basal IDBs, from which these planar defects behave like two-dimensional spinel-like inclusions in ZnO. Cathodoluminescence spectra reveal an increased luminescence around the band edge of spinel ZnFe2O4 when measuring on the spinel ZnFe2O4 NPs embedded in ZnO, whereas spectra from Fe-decorated IDBs could be deconvoluted into luminescence contributions from bulk ZnO and bulk ZnFe2O4.

STEM Tools for Semiconductor Characterization: Beyond High-Resolution Imaging

The smart engineering of novel semiconductor devices relies on the development of optimized functional materials suitable for the design of improved systems with advanced capabilities aside from better efficiencies. Thereby, the characterization of these materials at the highest level attainable is crucial for leading a proper understanding of their working principle. Due to the striking effect of atomic features on the behavior of semiconductor quantum- and nanostructures, scanning transmission electron microscopy (STEM) tools have been broadly employed for their characterization. Indeed, STEM provides a manifold characterization tool achieving insights on, not only the atomic structure and chemical composition of the analyzed materials, but also probing internal electric fields, plasmonic oscillations, light emission, band gap determination, electric field measurements, and many other properties. The emergence of new detectors and novel instrumental designs allowing the simultaneous collection of several signals render the perfect playground for the development of highly customized experiments specifically designed for the required analyses. This paper presents some of the most useful STEM techniques and several strategies and methodologies applied to address the specific analysis on semiconductors. STEM imaging, spectroscopies, 4D-STEM (in particular DPC), and in situ STEM are summarized, showing their potential use for the characterization of semiconductor nanostructured materials through recent reported studies.

Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors

The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn_kIn₂O_k+3 (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the k value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of k is discussed, even in the lowest term of the series (k = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In³⁺ are evaluated.

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cells due to the combination of suitable optoelectronic properties and an abundance of the constituting elements in the Earth's crust. The generation of periodic superstructures along the nanowire axis could provide an additional mechanism to tune their functional properties. Here we present the vapour-liquid-solid growth of zinc phosphide superlattices driven by periodic heterotwins. This uncommon planar defect involves the exchange of Zn by In at the twinning boundary. We find that the zigzag superlattice formation is driven by reduction of the total surface energy of the liquid droplet. The chemical variation across the heterotwin does not affect the homogeneity of the optical properties, as measured by cathodoluminescence. The basic understanding provided here brings new propsects on the use of II-V semiconductors in nanowire technology.

Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy

Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact on our understanding of materials science, especially in the field of semiconductor one-dimensional (1D) nanostructures. Recent advancements in TEM instrumentation, in particular aberration correction and monochromation, have enabled pioneering experiments in complex nanostructure material systems. This review aims to address these understandings through the applications of the methodology for semiconductor nanostructures. It points out various electron microscopy techniques, in particular scanning TEM (STEM) imaging and spectroscopy techniques, with their already-employed or potential applications on 1D nanostructured semiconductors. We keep the main focus of the paper on the electronic and optoelectronic properties of such semiconductors, and avoid expanding it further. In the first part of the review, we give a brief introduction to each of the STEM-based techniques, without detailed elaboration, and mention the recent technological and conceptual developments which lead to novel characterization methodologies. For further reading, we refer the audience to a handful of papers in the literature. In the second part, we highlight the recent examples of application of the STEM methodology on the 1D nanostructure semiconductor materials, especially III-V, II-V, and group IV bare and heterostructure systems. The aim is to address the research questions on various physical properties and introduce solutions by choosing the appropriate technique that can answer the questions. Potential applications will also be discussed, the ones that have already been used for bulk and 2D materials, and have shown great potential and promise for 1D nanostructure semiconductors.

ZnII Complexes for Bioimaging and Correlated Applications

Zinc is a biocompatible element that exists as the second most abundant transition metal ion and an indispensable trace element in the human body. Compared to traditional metal-organic complexes systems, d¹⁰ metal Zn^II complexes not only exhibit a large Stokes shift and good photon stability but also possess strong emission and low cytotoxicity with a relatively small molecular weight. The use of Zn^II complexes has emerged in the last decade as a versatile and convenient tool for numerous biological applications, including bioimaging, molecular and protein recognition, as well as photodynamic therapy. Herein, we review recent developments involving Zn^II metal complexes applied as specific subcellular compartment imaging probes and their correlated utilizations.

Poisson noise removal from high-resolution STEM images based on periodic block matching

Scanning transmission electron microscopy (STEM) provides sub-ångstrom, atomic resolution images of crystalline structures. However, in many applications, the ability to extract information such as atom positions, from such electron micrographs, is severely obstructed by low signal-to-noise ratios of the acquired images resulting from necessary limitations to the electron dose. We present a denoising strategy tailored to the special features of atomic-resolution electron micrographs of crystals limited by Poisson noise based on the block-matching and 3D-filtering (BM3D) algorithm by Dabov et al. We also present an economized block-matching strategy that exploits the periodic structure of the observed crystals. On simulated single-shot STEM images of inorganic materials, with incident electron doses below 4 C/cm 2, our new method achieves precisions of 7 to 15 pm and an increase in peak signal-to-noise ratio (PSNR) of 15 to 20 dB compared to noisy images and 2 to 4 dB compared to images denoised with the original BM3D.

Zigzag inversion domain boundaries in indium zinc oxide-based nanowires: structure and formation

Existing models for the crystal structure of indium zinc oxide (IZO) and indium iron zinc oxide (IFZO) conflict with electron microscopy data. We propose a model based on imaging and spectroscopy of IZO and IFZO nanowires and verify it using density functional theory. The model features a {121 [symbol: see text]} "zigzag" layer, which is an inversion domain boundary containing 5-coordinate indium and/or iron atoms. Higher [symbol: see text] values are observed for greater proportion of iron. We suggest a mechanism of formation in which the basal inclusion and the zigzag diffuse inward together from the surface of the nanowire.

Defect structures in ZnO studied by high-resolution structural and spectroscopic imaging

The formation of characteristic inversion domain structures in zinc oxide (ZnO) is triggered by the addition of trivalent Fe(3+) or In(3+) dopants. As-grown and inverted ZnO domains are separated by two types of inversion domain boundaries (IDBs): basal b-IDBs parallel to {0001}, and pyramidal p-IDBs parallel to {21¯1¯5} lattice planes in three equivalent variants. Cs-corrected analytical TEM/STEM is the method of choice for a comprehensive structural and compositional characterization of these materials. It is shown by electron and X-ray spectroscopic imaging in STEM that dopant species are essentially localized within both types of IDBs, whereas solid solubility of trivalent dopants within ZnO domains is rather low (<0.5at%). Under the assumption of one monolayer per IDB the relation between inversion domain structure and integral dopant concentration correlates well with integral EDS and EELS measurements in STEM over well defined sample regions. The presence of one close-packed monolayer of trivalent dopant ions within a b-IDB is unambiguously confirmed by atomic resolution STEM imaging. Columns of cations are clearly imaged in high-angle annular dark-field (HAADF) STEM imaging, whereas annular bright-field (ABF) STEM is capable of imaging both light and heavy atom columns simultaneously. It is shown that structural details in ABF images are directly interpretable even in specimen regions with thickness >50nm. The structural inversion associated with a stacking fault as a consequence of the presence of octahedrally coordinated In(3+) in the b-IDB is directly revealed by atomic resolution imaging. Column positions in atomic resolution ABF imaging in In2O3-ZnO nanorods show that the oxygen sub-lattice continues across the b-IDB with only marginal distortions, whereas the cation sub-lattice suffers a rigid shift relative to the oxygen lattice as a result of the coordination geometry of ZnO4 tetrahedrons sharing common oxygen ions with the InO6 coordination octahedrons.

Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires

We report that Sb-decorated head-to-head (H-H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H-H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of O per H-H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p-n homojunction devices.