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Mukesh N, Márkus BG, Jegenyes N, Bortel G, Bezerra SM, Simon F, Beke D, Gali A. Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide. MICROMACHINES 2023; 14:1517. [PMID: 37630053 PMCID: PMC10456762 DOI: 10.3390/mi14081517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Revised: 07/18/2023] [Accepted: 07/25/2023] [Indexed: 08/27/2023]
Abstract
Silicon carbide (SiC) is a very promising platform for quantum information processing, as it can host room temperature solid state defect quantum bits. These room temperature quantum bits are realized by paramagnetic silicon vacancy and divacancy defects in SiC that are typically introduced by irradiation techniques. However, irradiation techniques often introduce unwanted defects near the target quantum bit defects that can be detrimental for the operation of quantum bits. Here, we demonstrate that by adding aluminum precursor to the silicon and carbon sources, quantum bit defects are created in the synthesis of SiC without any post treatments. We optimized the synthesis parameters to maximize the paramagnetic defect concentrations-including already established defect quantum bits-monitored by electron spin resonance spectroscopy.
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Affiliation(s)
- Nain Mukesh
- Institute of Physics, ELTE Eötvös Loránd University, Egyetem tér 1-3., H-1053 Budapest, Hungary
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
| | - Bence G. Márkus
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Stavropoulos Center for Complex Quantum Matter, Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Department of Physics, Institute of Physics and ELKH-BME Condensed Matter Research Group, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
| | - Nikoletta Jegenyes
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
| | - Gábor Bortel
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
| | - Sarah M. Bezerra
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Department of Physical Chemistry and Materials Science, Faculty of Chemical Technology and Biotechnology, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
| | - Ferenc Simon
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Department of Physics, Institute of Physics and ELKH-BME Condensed Matter Research Group, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
| | - David Beke
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Stavropoulos Center for Complex Quantum Matter, Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Adam Gali
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
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Wang LC, Chen Y, Gong M, Yu F, Chen QD, Tian ZN, Ren XF, Sun HB. Edge State, Localization Length, and Critical Exponent from Survival Probability in Topological Waveguides. PHYSICAL REVIEW LETTERS 2022; 129:173601. [PMID: 36332264 DOI: 10.1103/physrevlett.129.173601] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 08/05/2022] [Accepted: 09/20/2022] [Indexed: 06/16/2023]
Abstract
Edge states in topological phase transitions have been observed in various platforms. To date, verification of the edge states and the associated topological invariant are mostly studied, and yet a quantitative measurement of topological phase transitions is still lacking. Here, we show the direct measurement of edge states and their localization lengths from survival probability. We employ photonic waveguide arrays to demonstrate the topological phase transitions based on the Su-Schrieffer-Heeger model. By measuring the survival probability at the lattice boundary, we show that in the long-time limit, the survival probability is P=(1-e^{-2/ξ_{loc}})^{2}, where ξ_{loc} is the localization length. This length derived from the survival probability is compared with the distance from the transition point, yielding a critical exponent of ν=0.94±0.04 at the phase boundary. Our experiment provides an alternative route to characterizing topological phase transitions and extracting their key physical quantities.
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Affiliation(s)
- Li-Cheng Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Yang Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ming Gong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Feng Yu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Qi-Dai Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Zhen-Nan Tian
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xi-Feng Ren
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Hong-Bo Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing 100084, China
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Fan Y, Song Y, Xu Z, Wu J, Zhu R, Li Q, Fang F. Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing. NANOTECHNOLOGY 2021; 33:125701. [PMID: 34875640 DOI: 10.1088/1361-6528/ac40c1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 12/07/2021] [Indexed: 06/13/2023]
Abstract
Molecular dynamics simulation is adopted to discover the formation mechanism of silicon vacancy color center and to study the damage evolution in 4H-SiC during helium ion implantation with different annealing temperatures. The number and distribution of silicon vacancy color centers during He ion implantation can be more accurately simulated by introducing the ionization energy loss during implantation. A new method for numerical statistic of silicon vacancy color centers is proposed, which takes into account the structure around the color centers and makes statistical results more accurate than the Wigner-Seitz defect analysis method. Meanwhile, the photoluminescence spectra of silicon vacancy color centers at different helium ion doses are characterized to verify the correctness of the numerical analysis. The new silicon vacancy color center identification method can help predicting the optimal annealing temperature for silicon vacancy color centers, and provide guidance for subsequent color center annealing experiments.
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Affiliation(s)
- Yexin Fan
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Ying Song
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Zongwei Xu
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Jintong Wu
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Rui Zhu
- State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Fengzhou Fang
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
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Gao S, Tian ZN, Yu P, Sun HY, Fan H, Chen QD, Sun HB. Deep diamond single-photon sources prepared by a femtosecond laser. OPTICS LETTERS 2021; 46:4386-4389. [PMID: 34470022 DOI: 10.1364/ol.435799] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Accepted: 08/11/2021] [Indexed: 06/13/2023]
Abstract
Nitrogen-vacancy color centers (NVs) in diamond have several potential applications ranging from quantum computing to data storage. However, artificial NVs are often close to the surface, which limits their spatial density and applicability. Here we demonstrate an effective and precise method for preparing deep single NVs in diamond. The method is based on a spatial-shaped femtosecond laser to overcome laser defocus in high-refractive materials, and realizes the preparation of single NVs at 95 µm. In addition, owing to the good energy distribution of the shaped laser focus, the single NVs exhibit a statistic yield of 56%±11% with excellent qualities. This processing method will contribute to the integration of color centers with emerging optical elements and high-density data storage.
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Xu Z, Tang Y, Rommel M. Foreword to the special issue on wide-bandgap (WBG) semiconductors: from fundamentals to applications. NANOTECHNOLOGY AND PRECISION ENGINEERING 2020. [DOI: 10.1016/j.npe.2021.01.001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
| | - Yidan Tang
- Institute of Microelectronics of Chinese Academy of Sciences, China
| | - Mathias Rommel
- Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany
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