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Zhu M, Li Q, Guo K, Chen B, He K, Yi C, Lu P, Li X, Lu J, Li J, Wu R, Liu X, Liu Y, Liao L, Li B, Duan X. Two-Dimensional Ultrathin Fe 3Sn 2 Kagome Metal with Defect-Dependent Magnetic Property. NANO LETTERS 2024. [PMID: 38842926 DOI: 10.1021/acs.nanolett.4c01765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Two-dimensional (2D) Fe3Sn2, which is a room-temperature ferromagnetic kagome metal, has potential applications in spintronic devices. However, the systematic synthesis and magnetic study of 2D Fe3Sn2 single crystals have rarely been reported. Here we have synthesized 2D hexagonal and triangular Fe3Sn2 nanosheets by controlling the amount of FeCl2 precursors in the chemical vapor deposition (CVD) method. It is found that the hexagonal Fe3Sn2 nanosheets exist with Fe vacancy defects and show no obvious coercivity. While the triangular Fe3Sn2 nanosheet has obvious hysteresis loops at room temperature, its coercivity first increases and then remains stable with an increase in temperature, which should result from the competition of the thermal activation mechanism and spin direction rotation mechanism. A first-principles calculation study shows that the Fe vacancy defects in Fe3Sn2 can increase the distances between Fe atoms and weaken the ferromagnetism of Fe3Sn2. The resulting 2D Fe3Sn2 nanosheets provide a new choice for spintronic devices.
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Affiliation(s)
- Manli Zhu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Qiuqiu Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Kaiwen Guo
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Bailian Chen
- School of Design, Hunan University, Changsha 410082, People's Republic of China
| | - Kun He
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Chen Yi
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Ping Lu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xingyun Li
- DongGuan Institute of GuangDong Institute of Metrology, Dongguan 523343, People's Republic of China
| | - Jiwu Lu
- School of Design, Hunan University, Changsha 410082, People's Republic of China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ruixia Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xingqiang Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Lei Liao
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Bo Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, People's Republic of China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
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2
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Liu J, Li Q, Li Y, Fan X, Li J, Zhu P, Deng H, Yin JX, Yang H, Li J, Wen HH, Wang Z. Enhancement of superconductivity and phase diagram of Ta-doped Kagome superconductor CsV 3Sb 5. Sci Rep 2024; 14:9580. [PMID: 38671053 PMCID: PMC11052999 DOI: 10.1038/s41598-024-59518-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Accepted: 04/11/2024] [Indexed: 04/28/2024] Open
Abstract
Kagome superconductors AV3Sb5 (A = K, Rb, and Cs) have attracted enormous interest due to the coexistence of charge density wave (CDW) order, unconventional superconductivity (SC) and anomalous Hall effect (AHE). In this paper, we reported an intensive investigation on Cs(V1-xTax)3Sb5 single crystals with systematic Ta doping. Ta was confirmed to be doped into V-site in the Kagome layer from both single crystal X-ray diffraction structural refinement and scanning transmission electron microscopy observation. The highest Ta doping level was found to be about 16%, which is more than twice as much as 7% in Nb-doped CsV3Sb5. With the increase of Ta doping, CDW order was gradually suppressed and finally vanished when the doping level reached to more than 8%. Meanwhile, superconductivity was enhanced with a maximum critical temperature (Tc) of 5.3 K, which is the highest Tc in the bulk crystal of this Kagome system at ambient pressure so far. The μ0Hc2(T) behavior demonstrates that the system is still a two-band superconductor after Ta doping. Based on the electrical transport measurement, a phase diagram was set up to exhibit the evolution of CDW and SC in the Cs(V1-xTax)3Sb5 system. These findings pave a new way to search for new superconductors with higher Tc in the AV3Sb5 family and establish a new platform for tuning and controlling the multiple orders and superconducting states.
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Affiliation(s)
- Jinjin Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Qing Li
- National Laboratory of Solid State Microstructures and Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314011, People's Republic of China
| | - Xinwei Fan
- National Laboratory of Solid State Microstructures and Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Jun Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314011, People's Republic of China
| | - Hanbin Deng
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, People's Republic of China
| | - Jia-Xin Yin
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, People's Republic of China
| | - Huaixin Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Jianqi Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Hai-Hu Wen
- National Laboratory of Solid State Microstructures and Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314011, People's Republic of China.
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Huang Z, Han X, Zhao Z, Liu J, Li P, Tan H, Wang Z, Yao Y, Yang H, Yan B, Jiang K, Hu J, Wang Z, Chen H, Gao HJ. Tunable vortex bound states in multiband CsV 3Sb 5-derived kagome superconductors. Sci Bull (Beijing) 2024; 69:885-892. [PMID: 38383234 DOI: 10.1016/j.scib.2024.01.036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/27/2023] [Accepted: 01/23/2024] [Indexed: 02/23/2024]
Abstract
Vortices and bound states offer an effective means of comprehending the electronic properties of superconductors. Recently, surface-dependent vortex core states have been observed in the newly discovered kagome superconductors CsV3Sb5. Although the spatial distribution of the sharp zero energy conductance peak appears similar to Majorana bound states arising from the superconducting Dirac surface states, its origin remains elusive. In this study, we present observations of tunable vortex bound states (VBSs) in two chemically-doped kagome superconductors Cs(V1-xTrx)3Sb5 (Tr = Ta or Ti), using low-temperature scanning tunneling microscopy/spectroscopy. The CsV3Sb5-derived kagome superconductors exhibit full-gap-pairing superconductivity accompanied by the absence of long-range charge orders, in contrast to pristine CsV3Sb5. Zero-energy conductance maps demonstrate a field-driven continuous reorientation transition of the vortex lattice, suggesting multiband superconductivity. The Ta-doped CsV3Sb5 displays the conventional cross-shaped spatial evolution of Caroli-de Gennes-Matricon bound states, while the Ti-doped CsV3Sb5 exhibits a sharp, non-split zero-bias conductance peak (ZBCP) that persists over a long distance across the vortex. The spatial evolution of the non-split ZBCP is robust against surface effects and external magnetic field but is related to the doping concentrations. Our study reveals the tunable VBSs in multiband chemically-doped CsV3Sb5 system and offers fresh insights into previously reported Y-shaped ZBCP in a non-quantum-limit condition at the surface of kagome superconductor.
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Affiliation(s)
- Zihao Huang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xianghe Han
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhen Zhao
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jinjin Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Pengfei Li
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hengxin Tan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Hefei National Laboratory, Hefei 230088, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Kun Jiang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiangping Hu
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ziqiang Wang
- Department of Physics, Boston College, Chestnut Hill MA 02467, USA
| | - Hui Chen
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Hefei National Laboratory, Hefei 230088, China.
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Hefei National Laboratory, Hefei 230088, China.
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4
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Yi XW, Liao ZW, You JY, Gu B, Su G. Superconducting, Topological, and Transport Properties of Kagome Metals CsTi 3Bi 5 and RbTi 3Bi 5. RESEARCH (WASHINGTON, D.C.) 2023; 6:0238. [PMID: 37789987 PMCID: PMC10543885 DOI: 10.34133/research.0238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/07/2023] [Accepted: 09/05/2023] [Indexed: 10/05/2023]
Abstract
The recently discovered ATi3Bi5 (A=Cs, Rb) exhibit intriguing quantum phenomena including superconductivity, electronic nematicity, and abundant topological states. ATi3Bi5 present promising platforms for studying kagome superconductivity, band topology, and charge orders in parallel with AV3Sb5. In this work, we comprehensively analyze various properties of ATi3Bi5 covering superconductivity under pressure and doping, band topology under pressure, thermal conductivity, heat capacity, electrical resistance, and spin Hall conductivity (SHC) using first-principles calculations. Calculated superconducting transition temperature (Tc) of CsTi3Bi5 and RbTi3Bi5 at ambient pressure are about 1.85 and 1.92 K. When subject to pressure, Tc of CsTi3Bi5 exhibits a special valley and dome shape, which arises from quasi-two-dimensional compression to three-dimensional isotropic compression within the context of an overall decreasing trend. Furthermore, Tc of RbTi3Bi5 can be effectively enhanced up to 3.09 K by tuning the kagome van Hove singularities (VHSs) and flat band through doping. Pressures can also induce abundant topological surface states at the Fermi energy (EF) and tune VHSs across EF. Additionally, our transport calculations are in excellent agreement with recent experiments, confirming the absence of charge density wave. Notably, SHC of CsTi3Bi5 can reach up to 226ℏ ·(e· Ω ·cm)-1 at EF. Our work provides a timely and detailed analysis of the rich physical properties for ATi3Bi5, offering valuable insights for further experimental verifications and investigations in this field.
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Affiliation(s)
- Xin-Wei Yi
- School of Physical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zheng-Wei Liao
- School of Physical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing-Yang You
- Department of Physics, Faculty of Science,
National University of Singapore, 117551, Singapore
| | - Bo Gu
- School of Physical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
- Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation,
University of Chinese Academy of Sciences, Beijing 100190, China
| | - Gang Su
- School of Physical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
- Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation,
University of Chinese Academy of Sciences, Beijing 100190, China
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Jiang Z, Liu Z, Ma H, Xia W, Liu Z, Liu J, Cho S, Yang Y, Ding J, Liu J, Huang Z, Qiao Y, Shen J, Jing W, Liu X, Liu J, Guo Y, Shen D. Flat bands, non-trivial band topology and rotation symmetry breaking in layered kagome-lattice RbTi 3Bi 5. Nat Commun 2023; 14:4892. [PMID: 37580381 PMCID: PMC10425367 DOI: 10.1038/s41467-023-40515-3] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 07/21/2023] [Indexed: 08/16/2023] Open
Abstract
A representative class of kagome materials, AV3Sb5 (A = K, Rb, Cs), hosts several unconventional phases such as superconductivity, [Formula: see text] non-trivial topological states, and electronic nematic states. These can often coexist with intertwined charge-density wave states. Recently, the discovery of the isostructural titanium-based single-crystals, ATi3Bi5 (A = K, Rb, Cs), which exhibit similar multiple exotic states but without the concomitant charge-density wave, has opened an opportunity to disentangle these complex states in kagome lattices. Here, we combine high-resolution angle-resolved photoemission spectroscopy and first-principles calculations to investigate the low-lying electronic structure of RbTi3Bi5. We demonstrate the coexistence of flat bands and several non-trivial states, including type-II Dirac nodal lines and [Formula: see text] non-trivial topological surface states. Our findings also provide evidence for rotational symmetry breaking in RbTi3Bi5, suggesting a directionality to the electronic structure and the possible emergence of pure electronic nematicity in this family of kagome compounds.
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Affiliation(s)
- Zhicheng Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhengtai Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 201210, Shanghai, China.
| | - Haiyang Ma
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 201210, Shanghai, China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 201210, Shanghai, China
| | - Zhonghao Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Jishan Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 201210, Shanghai, China
| | - Soohyun Cho
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Yichen Yang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Jianyang Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Jiayu Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Zhe Huang
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China
| | - Yuxi Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Jiajia Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Wenchuan Jing
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Xiangqi Liu
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 201210, Shanghai, China
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230029, Hefei, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China.
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 201210, Shanghai, China.
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China.
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 201210, Shanghai, China.
| | - Dawei Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230029, Hefei, China.
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6
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Sur Y, Kim KT, Kim S, Kim KH. Optimized superconductivity in the vicinity of a nematic quantum critical point in the kagome superconductor Cs(V 1-xTi x) 3Sb 5. Nat Commun 2023; 14:3899. [PMID: 37414793 PMCID: PMC10326258 DOI: 10.1038/s41467-023-39495-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 06/06/2023] [Indexed: 07/08/2023] Open
Abstract
CsV3Sb5 exhibits superconductivity at Tc = 3.2 K after undergoing intriguing two high-temperature transitions: charge density wave order at ~98 K and electronic nematic order at Tnem ~ 35 K. Here, we investigate nematic susceptibility in single crystals of Cs(V1-xTix)3Sb5 (x = 0.00-0.06) where double-dome-shaped superconducting phase diagram is realized. The nematic susceptibility typically exhibits the Curie‒Weiss behaviour above Tnem, which is monotonically decreased with x. Moreover, the Curie‒Weiss temperature is systematically suppressed from ~30 K for x = 0 to ~4 K for x = 0.0075, resulting in a sign change at x = ~0.009. Furthermore, the Curie constant reaches a maximum at x = 0.01, suggesting drastically enhanced nematic susceptibility near a putative nematic quantum critical point (NQCP) at x = ~0.009. Strikingly, Tc is enhanced up to ~4.1 K with full Meissner shielding realized at x = ~0.0075-0.01, forming the first superconducting dome near the NQCP. Our findings directly point to a vital role of nematic fluctuations in enhancing the superconducting properties of Cs(V1-xTix)3Sb5.
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Affiliation(s)
- Yeahan Sur
- Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kwang-Tak Kim
- Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sukho Kim
- Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kee Hoon Kim
- Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
- Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
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7
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Lei X, Wang P, Mi M, Zhang Y, Chen A, Cai L, Wang T, Huang R, Wang Y, Chen Y, Li FS. Band splitting and enhanced charge density wave modulation in Mn-implanted CsV 3Sb 5. NANOSCALE ADVANCES 2023; 5:2785-2793. [PMID: 37205292 PMCID: PMC10186988 DOI: 10.1039/d3na00216k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Accepted: 04/17/2023] [Indexed: 05/21/2023]
Abstract
Kagome metal CsV3Sb5 has attracted unprecedented attention due to the charge density wave (CDW), Z2 topological surface states and unconventional superconductivity. However, how the paramagnetic bulk CsV3Sb5 interacts with magnetic doping is rarely explored. Here we report a Mn-doped CsV3Sb5 single crystal successfully achieved by ion implantation, which exhibits obvious band splitting and enhanced CDW modulation via angle-resolved photoemission spectroscopy (ARPES). The band splitting is anisotropic and occurs in the entire Brillouin region. We observed a Dirac cone gap at the K point but it closed at 135 K ± 5 K, much higher than the bulk value of ∼94 K, suggesting enhanced CDW modulation. According to the facts of the transferred spectral weight to the Fermi level and weak antiferromagnetic order at low temperature, we ascribe the enhanced CDW to the polariton excitation and Kondo shielding effect. Our study not only offers a simple method to realize deep doping in bulk materials, but also provides an ideal platform to explore the coupling between exotic quantum states in CsV3Sb5.
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Affiliation(s)
- Xiaoxu Lei
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Pengdong Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Mengjuan Mi
- School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University Jinan 250100 China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices, Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Aixi Chen
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Liwu Cai
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
- Nano Science and Technology Institute, University of Science and Technology of China Suzhou 215123 China
| | - Ting Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Rong Huang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Yilin Wang
- School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University Jinan 250100 China
| | - Yiyao Chen
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Fang-Sen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
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8
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Chapai R, Leroux M, Oliviero V, Vignolles D, Bruyant N, Smylie MP, Chung DY, Kanatzidis MG, Kwok WK, Mitchell JF, Welp U. Magnetic Breakdown and Topology in the Kagome Superconductor CsV_{3}Sb_{5} under High Magnetic Field. PHYSICAL REVIEW LETTERS 2023; 130:126401. [PMID: 37027842 DOI: 10.1103/physrevlett.130.126401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 12/15/2022] [Accepted: 03/03/2023] [Indexed: 06/19/2023]
Abstract
The recently discovered layered kagome metals of composition AV_{3}Sb_{5} (A=K, Rb, Cs) exhibit a complex interplay among superconductivity, charge density wave order, topologically nontrivial electronic band structure and geometrical frustration. Here, we probe the electronic band structure underlying these exotic correlated electronic states in CsV_{3}Sb_{5} with quantum oscillation measurements in pulsed fields up to 86 T. The high-field data reveal a sequence of magnetic breakdown orbits that allows the construction of a model for the folded Fermi surface of CsV_{3}Sb_{5}. The dominant features are large triangular Fermi surface sheets that cover almost half the folded Brillouin zone. These sheets have not yet been detected in angle resolved photoemission spectroscopy and display pronounced nesting. The Berry phases of the electron orbits have been deduced from Landau level fan diagrams near the quantum limit without the need for extrapolations, thereby unambiguously establishing the nontrivial topological character of several electron bands in this kagome lattice superconductor.
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Affiliation(s)
- Ramakanta Chapai
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Maxime Leroux
- LNCMI-EMFL, CNRS UPR3228, Université Grenoble Alpes, Université de Toulouse, Université de Toulouse 3, INSA-T, Grenoble and Toulouse, France
| | - Vincent Oliviero
- LNCMI-EMFL, CNRS UPR3228, Université Grenoble Alpes, Université de Toulouse, Université de Toulouse 3, INSA-T, Grenoble and Toulouse, France
| | - David Vignolles
- LNCMI-EMFL, CNRS UPR3228, Université Grenoble Alpes, Université de Toulouse, Université de Toulouse 3, INSA-T, Grenoble and Toulouse, France
| | - Nicolas Bruyant
- LNCMI-EMFL, CNRS UPR3228, Université Grenoble Alpes, Université de Toulouse, Université de Toulouse 3, INSA-T, Grenoble and Toulouse, France
| | - M P Smylie
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
- Department of Physics and Astronomy, Hofstra University, Hempstead, New York 11549, USA
| | - D Y Chung
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - M G Kanatzidis
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
- Department of Chemistry, Northwestern University, Evanston, Illinois 60201, USA
| | - W-K Kwok
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - J F Mitchell
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Ulrich Welp
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
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9
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Scammell HD, Ingham J, Li T, Sushkov OP. Chiral excitonic order from twofold van Hove singularities in kagome metals. Nat Commun 2023; 14:605. [PMID: 36739274 PMCID: PMC9899280 DOI: 10.1038/s41467-023-35987-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Accepted: 01/10/2023] [Indexed: 02/06/2023] Open
Abstract
Recent experiments on kagome metals AV3Sb5 (A=K,Rb,Cs) identify twofold van Hove singularities (TvHS) with opposite concavity near the Fermi energy, generating two approximately hexagonal Fermi surfaces - one electron-like and the other hole-like. Here we propose that a TvHS generates a novel time-reversal symmetry breaking excitonic order - arising due to bound pairs of electrons and holes located at opposite concavity van Hove singularities. We introduce a minimal model for the TvHS and investigate interaction induced many-body instabilities via the perturbative renormalisation group technique and a free energy analysis. Specialising to parameters appropriate for the kagome metals AV3Sb5, we construct a phase diagram comprising chiral excitons, charge density wave and a region of coexistence. We propose this as an explanation of a diverse range of experimental observations in AV3Sb5. Notably, the chiral excitonic state gives rise to a quantum anomalous Hall conductance, providing an appealing interpretation of the observed anomalous Hall effect in kagome metals. Possible alternative realisations of the TvHS mechanism in bilayer materials are also discussed. We suggest that TvHS open up interesting possibilities for correlated phases, enriching the set of competing ground states to include excitonic order.
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Affiliation(s)
- Harley D. Scammell
- grid.1005.40000 0004 4902 0432School of Physics, University of New South Wales, Sydney, NSW 2052 Australia ,grid.1005.40000 0004 4902 0432Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, NSW 2052 Australia
| | - Julian Ingham
- grid.189504.10000 0004 1936 7558Physics Department, Boston University, Commonwealth Avenue, Boston, MA 02215 USA
| | - Tommy Li
- grid.14095.390000 0000 9116 4836Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany
| | - Oleg P. Sushkov
- grid.1005.40000 0004 4902 0432School of Physics, University of New South Wales, Sydney, NSW 2052 Australia ,grid.1005.40000 0004 4902 0432Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, NSW 2052 Australia
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10
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Yi XW, Liao ZW, You JY, Gu B, Su G. Topological superconductivity and large spin Hall effect in the kagome family Ti 6X 4 (X = Bi, Sb, Pb, Tl, and In). iScience 2022; 26:105813. [PMID: 36619974 PMCID: PMC9817178 DOI: 10.1016/j.isci.2022.105813] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Revised: 11/29/2022] [Accepted: 12/12/2022] [Indexed: 12/23/2022] Open
Abstract
Topological superconductors (TSC) become a focus of research due to the accompanying Majorana fermions. However, the reported TSC are extremely rare. Recent experiments reported kagome TSC AV3Sb5 (A = K, Rb, and Cs) exhibit unique superconductivity, topological surface states (TSS), and Majorana bound states. More recently, the first titanium-based kagome superconductor CsTi3Bi5 with nontrivial topology was successfully synthesized as a perspective TSC. Given that Cs contributes little to electronic structures of CsTi3Bi5 and binary compounds may be easier to be synthesized, here, by first-principle calculations, we predict five stable nonmagnetic kagome compounds Ti6X4 (X = Bi, Sb, Pb, Tl, and In) which exhibit superconductivity with critical temperature Tc = 3.8 K - 5.1 K, nontrivial Z 2 band topology, and TSS close to the Fermi level. Additionally, large intrinsic spin Hall effect is obtained in Ti6X4, which is caused by gapped Dirac nodal lines due to a strong spin-orbit coupling. This work offers new platforms for TSC and spintronic devices.
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Affiliation(s)
- Xin-Wei Yi
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zheng-Wei Liao
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing-Yang You
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117551, Singapore,Corresponding author
| | - Bo Gu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China,Kavli Institute for Theoretical Sciences, CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China,Corresponding author
| | - Gang Su
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China,Kavli Institute for Theoretical Sciences, CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China,Corresponding author
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