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Xu B, Zhou J, Zhang C, Chang Y, Deng Z. Research Progress on Quantum Dot-Embedded Polymer Films and Plates for LCD Backlight Display. Polymers (Basel) 2025; 17:233. [PMID: 39861304 PMCID: PMC11769422 DOI: 10.3390/polym17020233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/30/2024] [Revised: 01/13/2025] [Accepted: 01/15/2025] [Indexed: 01/27/2025] Open
Abstract
Quantum dot-polymer composites have the advantages of high luminescent quantum yield (PLQY), narrow emission half-peak full width (FWHM), and tunable emission spectra, and have broad application prospects in display and lighting fields. Research on quantum dots embedded in polymer films and plates has made great progress in both synthesis technology and optical properties. However, due to the shortcomings of quantum dots, such as cadmium selenide (CdSe), indium phosphide (InP), lead halide perovskite (LHP), poor water, oxygen, and light stability, and incapacity for large-scale synthesis, their practical application is still restricted. Various polymers, such as methyl methacrylate (PMMA), polyethylene terephthalate (PET), polystyrene (PS), polyvinylidene fluoride (PVDF), polypropylene (PP), etc., are widely used in packaging quantum dot materials because of their high plasticity, simple curing, high chemical stability, and good compatibility with quantum dot materials. This paper focuses on the application and development of quantum dot-polymer materials in the field of backlight displays, summarizes and expounds the synthesis strategies, advantages, and disadvantages of different quantum dot-polymer materials, provides inspiration for the optimization of quantum dot-polymer materials, and promotes their application in the field of wide-color-gamut backlight display.
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Affiliation(s)
- Bin Xu
- Department of Electronic Information Engineering, School of Computer and Information Engineering, Nanjing Tech University, Nanjing 211816, China;
| | - Jiankang Zhou
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China; (J.Z.); (C.Z.)
| | - Chengran Zhang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China; (J.Z.); (C.Z.)
| | - Yunfu Chang
- Department of Electronic Information Engineering, School of Computer and Information Engineering, Nanjing Tech University, Nanjing 211816, China;
| | - Zhengtao Deng
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China; (J.Z.); (C.Z.)
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Yin Q, Chen T, Xie J, Lin R, Liang J, Wang H, Luo Y, Zhou S, Li H, Wang Z, Gao P. Unveiling the Effect of Cooling Rate on Grown-in Defects Concentration in Polycrystalline Perovskite Films for Solar Cells with Improved Stability. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405840. [PMID: 38994697 DOI: 10.1002/adma.202405840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2024] [Revised: 06/29/2024] [Indexed: 07/13/2024]
Abstract
Numerous efforts are devoted to reducing the defects at perovskite surface and/or grain boundary; however, the grown-in defects inside grain is rarely studied. Here, the influence of cooling rate on the point defects concentration in polycrystalline perovskite film during heat treatment processing is investigated. With the combination of theoretical and experimental studies, this work reveals that the supersaturated point defects in perovskite films generate during the cooling process and its concentration improves as the cooling rate increases. The supersaturated point defects can be minimized through slowing the cooling rate. As a result, the optimized FAPbI3 polycrystalline films achieve a superior carrier lifetime of up to 12.6 µs and improved stability. The champion device delivers a 25.47% PCE (certified 24.7%) and retain 90% of their initial value after >1100 h of operation at the maximum power point. These results provide a fundamental understanding of the mechanisms of grown-in defects formation in polycrystalline perovskite film.
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Affiliation(s)
- Qixin Yin
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Tian Chen
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Jiangsheng Xie
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Ruohao Lin
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Jiahao Liang
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Hepeng Wang
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Yuqing Luo
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Sicen Zhou
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Hailin Li
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Zhouti Wang
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
| | - Pingqi Gao
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Gongchang Road No. 66, Shenzhen, Guangdong, 518107, China
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China
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Wang S, Yu Z, Qin J, Chen G, Liu Y, Fan S, Ma C, Yao F, Cui H, Zhou S, Dong K, Lin Q, Tao C, Gao F, Ke W, Fang G. Buried interface modification and light outcoupling strategy for efficient blue perovskite light-emitting diodes. Sci Bull (Beijing) 2024; 69:2231-2240. [PMID: 38851911 DOI: 10.1016/j.scib.2024.05.028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 05/13/2024] [Accepted: 05/20/2024] [Indexed: 06/10/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) exhibit remarkable potential in the field of displays and solid-state lighting. However, blue PeLEDs, a key element for practical applications, still lag behind their green and red counterparts, due to a combination of strong nonradiative recombination losses and unoptimized device structures. In this report, we propose a buried interface modification strategy to address these challenges by focusing on the bottom-hole transport layer (HTL) of the PeLEDs. On the one hand, a multifunctional molecule, aminoacetic acid hydrochloride (AACl), is introduced to modify the HTL/perovskite interface to regulate the perovskite crystallization. Experimental investigations and theoretical calculations demonstrate that AACl can effectively reduce the nonradiative recombination losses in bulk perovskites by suppressing the growth of low-n perovskite phases and also the losses at the bottom interface by passivating interfacial defects. On the other hand, a self-assembly nanomesh structure is ingeniously developed within the HTLs. This nanomesh structure is meticulously crafted through the blending of poly-(9,9-dioctyl-fluorene-co-N-(4-butyl phenyl) diphenylamine) and poly (n-vinyl carbazole), significantly enhancing the light outcoupling efficiency in PeLEDs. As a result, our blue PeLEDs achieve remarkable external quantum efficiencies, 20.4% at 487 nm and 12.5% at 470 nm, which are among the highest reported values. Our results offer valuable insights and effective methods for achieving high-performance blue PeLEDs.
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Affiliation(s)
- Shuxin Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Zhiqiu Yu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jiajun Qin
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
| | - Guoyi Chen
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Yongjie Liu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Shuaiwei Fan
- Department of Physics, China Three Gorges University, Yichang 443002, China
| | - Chao Ma
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing 211816, China
| | - Fang Yao
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430200, China
| | - Hongsen Cui
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Shun Zhou
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Kailian Dong
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Qianqian Lin
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chen Tao
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430200, China
| | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden.
| | - Weijun Ke
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China.
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China.
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Xian G, Zheng T, Tao Y, Pan Z. Hydrothermal Growth and Orientation of LaFeO 3 Epitaxial Films. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2758. [PMID: 38894022 PMCID: PMC11174077 DOI: 10.3390/ma17112758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2024] [Revised: 05/28/2024] [Accepted: 06/04/2024] [Indexed: 06/21/2024]
Abstract
LaFeO3 thin films were successfully epitaxially grown on single-crystalline SrTiO3 substrates by the one-step hydrothermal method at a temperature of 320 °C in a 10 mol/L KOH aqueous solution using La(NO3)3 and Fe(NO3)3 as the raw materials. The growth of the films was consistent with the island growth mode. Scanning electronic microscopy, elemental mapping, and atomic force microscopy demonstrate that the LaFeO3 thin films cover the SrTiO3 substrate thoroughly. The film subjected to hydrothermal treatment for 4 h exhibits a relatively smooth surface, with an average surface roughness of 10.1 nm. X-ray diffraction in conventional Bragg-Brentano mode shows that the LaFeO3 thin films show the same out-of-plane orientation as that of the substrate (i.e., (001)LaFeO3||(001)SrTiO3). The in-plane orientation of the films was analyzed by φ-scanning, revealing that the orientational relationship is [001]LaFeO3||[001]SrTiO3. The ω-rocking curve indicates that the prepared LaFeO3 films are of high quality with no significant mosaic defects.
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Affiliation(s)
- Guang Xian
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211800, China; (G.X.); (T.Z.); (Y.T.)
| | - Tongxin Zheng
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211800, China; (G.X.); (T.Z.); (Y.T.)
| | - Yaqiu Tao
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211800, China; (G.X.); (T.Z.); (Y.T.)
- State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing 211800, China
| | - Zhigang Pan
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211800, China; (G.X.); (T.Z.); (Y.T.)
- State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing 211800, China
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Sun X, Wu M, Wang Y, Li Y, Dong Q, Wang K, Xiao G, Zou B. Self-Trapped Exciton Emission Enhancement in 3D Cationic Lead Halide Hybrids Via Phase Transition Engineering. J Phys Chem Lett 2024; 15:2031-2038. [PMID: 38349964 DOI: 10.1021/acs.jpclett.3c03625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/15/2024]
Abstract
Three-dimensional (3D) cationic lead halide hybrids constructed by organic ions and inorganic networks via coordination bonds are a promising material for solid-state lighting due to their exceptional environmental stability and broad-spectrum emission. Nevertheless, their fluorescence properties are hindered by the limited lattice distortion from extensive connectivity within the inorganic network. Here, a dramatic 100-fold enhancement of self-trapped exciton (STE) emission is achieved in 3D hybrid material [Pb2Br2][O2C(CH2)4CO2] via pressure-triggered phase transition. Notably, pressure-treated material exhibits a 110 nm redshift with 1.5-fold enhancement compared to the initial state after pressure was completely released. The irreversible structural phase transition intensifies the [PbBr3O3] octahedral distortion, which is highly responsible for the optimization of quenched emission. These findings present a promising strategy for improving the optical properties of 3D halide hybrids with relatively high stability and thus facilitate their practical applications by pressure-driven phase transition engineering.
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Affiliation(s)
- Xuening Sun
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Min Wu
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Yue Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Yongguang Li
- Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education, College of Material, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, China
| | - Qingfeng Dong
- State Key Laboratory of Supermolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - Kai Wang
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Bo Zou
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
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Zhou S, Fu S, Wang C, Meng W, Zhou J, Zou Y, Lin Q, Huang L, Zhang W, Zeng G, Pu D, Guan H, Wang C, Dong K, Cui H, Wang S, Wang T, Fang G, Ke W. Aspartate all-in-one doping strategy enables efficient all-perovskite tandems. Nature 2023; 624:69-73. [PMID: 37938775 DOI: 10.1038/s41586-023-06707-z] [Citation(s) in RCA: 58] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Accepted: 10/03/2023] [Indexed: 11/09/2023]
Abstract
All-perovskite tandem solar cells hold great promise in surpassing the Shockley-Queisser limit for single-junction solar cells1-3. However, the practical use of these cells is currently hampered by the subpar performance and stability issues associated with mixed tin-lead (Sn-Pb) narrow-bandgap perovskite subcells in all-perovskite tandems4-7. In this study, we focus on the narrow-bandgap subcells and develop an all-in-one doping strategy for them. We introduce aspartate hydrochloride (AspCl) into both the bottom poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonate) and bulk perovskite layers, followed by another AspCl posttreatment. We show that a single AspCl additive can effectively passivate defects, reduce Sn4+ impurities and shift the Fermi energy level. Additionally, the strong molecular bonding of AspCl-Sn/Pb iodide and AspCl-AspCl can strengthen the structure and thereby improve the stability of Sn-Pb perovskites. Ultimately, the implementation of AspCl doping in Sn-Pb perovskite solar cells yielded power conversion efficiencies of 22.46% for single-junction cells and 27.84% (27.62% stabilized and 27.34% certified) for tandems with 95% retention after being stored in an N2-filled glovebox for 2,000 h. These results suggest that all-in-one AspCl doping is a favourable strategy for enhancing the efficiency and stability of single-junction Sn-Pb perovskite solar cells and their tandems.
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Affiliation(s)
- Shun Zhou
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Shiqiang Fu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Chen Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Weiwei Meng
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Jin Zhou
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Yuanrong Zou
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Qingxian Lin
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Lishuai Huang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Wenjun Zhang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Guojun Zeng
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Dexin Pu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Hongling Guan
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Cheng Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Kailian Dong
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Hongsen Cui
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Shuxin Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Ti Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China.
| | - Weijun Ke
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China.
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