Subtleties in ADF imaging and spatially resolved EELS: A case study of low-angle twist boundaries in SrTiO3

Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon

A fascinating aspect of nanoscale ferroelectric materials is the emergence of topological polar textures, which include various complex and stable polarization configurations. The manipulation of such topological textures through external stimuli like electric fields holds promise for advanced nanoelectronics applications. There are, however, several challenges to reach potential applications, among which reliably creating and controlling these textures at the nanoscale on silicon, and with lead-free compounds. We report the realization of epitaxial BaTiO3 nanoislands on silicon, with a lateral size as small as 30-60 nm, and demonstrate stable center down-convergent polarization domains that can be reversibly switched by an electric field to center up-divergent domains. Piezoresponse force microscopy data reconstruction and phase field modeling give insight into the 3D patterns. The trapezoidal-shape nanoislands give rise to center down-convergent lateral swirling polarization component with respect to the nanoisland axis, which prevents the formation of bound charges on the side walls, therefore minimizing depolarization fields. The texture resembles a swirling vortex of liquid flowing into a narrowing funnel. Chirality emerges from the whirling polarization configurations. The ability to create and electrically manipulate chiral whirling polar textures in BaTiO3 nanostructures grown monolithically on silicon holds promise for applications in future topological nanoelectronics.

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.

Interface Design beyond Epitaxy: Oxide Heterostructures Comprising Symmetry-Forbidden Interfaces

Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between 3D materials. However, these interfaces can only join material systems with crystal lattices of matching symmetries and lattice constants. This article presents a novel category of interfaces, the fabrication of which is membrane-based and does not require epitaxial growth. These interfaces therefore overcome the limitations imposed by epitaxy. Leveraging the additional degrees of freedom gained, atomically clean interfaces are demonstrated between threefold symmetric sapphire and fourfold symmetric SrTiO3. Atomic-resolution imaging reveals structurally well-defined interfaces with a novel moiré-type reconstruction.

Atomic-scale observation of localized phonons at FeSe/SrTiO3 interface

In single unit-cell FeSe grown on SrTiO3, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. The complicated atomic structure of the interface brings challenges to obtain the accurate structure-phonon relation knowledge. Here, we achieve direct characterizations of atomic structure and phonon modes at the FeSe/SrTiO3 interface with atomically resolved imaging and electron energy loss spectroscopy in an electron microscope. We find several phonon modes highly localized (~1.3 nm) at the unique double layer Ti-O terminated interface, one of which (~ 83 meV) engages in strong interactions with the electrons in FeSe based on ab initio calculations. This finding of the localized interfacial phonon associated with strong electron-phonon coupling provides new insights into understanding the origin of superconductivity enhancement at the FeSe/SrTiO3 interface.

Nanoscale Investigation of Local Thermal Expansion at SrTiO3 Grain Boundaries by Electron Energy Loss Spectroscopy

The presence of grain boundaries (GBs) has a great impact on the coefficient of thermal expansion (CTE) of polycrystals. However, direct measurement of local expansion of GBs remains challenging for conventional methods due to the lack of spatial resolution. In this work, we utilized the valence electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) to directly measure the CTE of Σ5 and 45°GBs of SrTiO₃ at a temperature range between 373 and 973 K. A CTE that was about 3 times larger was observed in Σ5 GB along the direction normal to GB plane, while only a 1.4 time enhancement was found in the 45° GB. Our result provides direct evidence that GBs contribute to the enhancement of CTE in polycrystals. Also, this work has revealed how thermodynamic properties are varied in different GB structures and demonstrated the potential of EELS for probing local thermal properties with nanometer-scale resolution.

Determination of Grain-Boundary Structure and Electrostatic Characteristics in a SrTiO3 Bicrystal by Four-Dimensional Electron Microscopy

The grain boundary (GB) plays a critical role in a material's properties and device performance. Therefore, the characterization of a GB's atomic structure and electrostatic characteristics is a matter of great importance for materials science. Here, we report on the atomic structure and electrostatic analysis of a GB in a SrTiO₃ bicrystal by four-dimensional scanning transmission electron microscopy (4D-STEM). We demonstrate that the Σ5 GB is Ti-rich and poor in Sr. We investigate possible effects on the variation in the atomic electrostatic field, including oxygen vacancies, Ti-valence change, and accumulation of cations. A negative charge resulting from a space-charge zone in SrTiO₃ compensates a positive charge accumulated at the GB, which is in agreement with the double-Schottky-barrier model. It demonstrates the feasibility of characterizing the electrostatic properties at the nanometer scale by 4D-STEM, which provides comprehensive insights to understanding the GB structure and its concomitant effects on the electrostatic properties.

Two-Dimensional Room-Temperature Giant Antiferrodistortive SrTiO_{3} at a Grain Boundary

The broken symmetry at structural defects such as grain boundaries (GBs) discontinues chemical bonds, leading to the emergence of new properties that are absent in the bulk owing to the couplings between the lattice and other parameters. Here, we create a two-dimensional antiferrodistortive (AFD) strontium titanate (SrTiO_{3}) phase at a Σ13(510)/[001] SrTiO_{3} tilt GB at room temperature. We find that such an anomalous room-temperature AFD phase with the thickness of approximate six unit cells is stabilized by the charge doping from oxygen vacancies. The localized AFD originated from the strong lattice-charge couplings at a SrTiO_{3} GB is expected to play important roles in the electrical and optical activity of GBs and can explain past experiments such as the transport properties of electroceramic SrTiO_{3}. Our study also provides new strategies to create low-dimensional anomalous elements for future nanoelectronics via grain boundary engineering.

Direct Visualization of Trimerized States in 1T^{'}-TaTe_{2}

Transition-metal dichalcogenides containing tellurium anions show remarkable charge-lattice modulated structures and prominent interlayer character. Using cryogenic scanning transmission electron microscopy (STEM), we map the atomic-scale structures of the high temperature (HT) and low temperature (LT) modulated phases in 1T^{'}-TaTe_{2}. At HT, we directly show in-plane metal distortions which form trimerized clusters and staggered, three-layer stacking. In the LT phase at 93 K, we visualize an additional trimerization of Ta sites and subtle distortions of Te sites by extracting structural information from contrast modulations in plan-view STEM data. Coupled with density functional theory calculations and image simulations, this approach opens the door for atomic-scale visualizations of low temperature phase transitions and complex displacements in a variety of layered systems.

Study of interfacial random strain fields in core-shell ZnO nanowires by scanning transmission electron microscopy

Imaging strain fields at the nanoscale is crucial for understanding the physical properties as well as the performance of oxide heterostructures and electronic devices. Based on scanning transmission electron microscopy (STEM) techniques, we successfully imaged the random strain field at the interface of core-shell ZnO nanowires. Combining experimental observations and image simulations, we find that the strain contrast originates from dechanneling of electrons and increased diffuse scattering induced by static atomic displacements. For a thin sample with a random strain field, a positive strain contrast appears in the low-angle annular dark-field (LAADF) image and a negative contrast in the high-angle annular dark-field (HAADF) image, but for a thick sample (> 120 nm), the positive contrast always occurs in both the LAADF and HAADF images. Through the analysis of the relationship between strain contrast and various parameters, we also discuss the optimum experimental condition for imaging random strain fields.

Atomic-Scale Direct Identification of Surface Variations in Cathode Oxides for Aqueous and Nonaqueous Lithium-Ion Batteries

The electrochemical (de)intercalation reactions of lithium ions are initiated at the electrode surface in contact with an electrolyte solution. Therefore, substantial structural degradation, which shortens the cycle life of cells, is frequently observed at the surface of cathode particles, including lithium-metal intermixing, phase transitions, and dissolution of lithium and transition metals into the electrolyte. Furthermore, in contrast to the strict restriction of moisture in lithium-ion cells with nonaqueous organic electrolytes, electrode materials in aqueous-electrolyte cells are under much more reactive environments with water and oxygen, thereby leading to serious surface chemical reactions on the cathode particles. The present article presents key results regarding structural and composition variations at the surface of oxide-based cathodes in both high-performance nonaqueous and recently proposed aqueous lithium-ion batteries; in particular, focusing on direct atomic-scale observations preformed by means of scanning transmission electron microscopy. Precise identification of surface degradation at the atomic level is thus emphasized because it can provide significant insights into overcoming the limitations of current lithium-ion batteries.

A bottom-up process of self-formation of highly conductive titanium oxide (TiO) nanowires on reduced SrTiO3

Reduced titanium oxide structures are regarded as promising materials for various catalytic and optoelectronic applications. There is thus an urgent need for developing methods of controllable formation of crystalline nanostructures with tunable oxygen nonstoichiometry. We introduce the Extremely Low Oxygen Partial Pressure (ELOP) method, employing an oxygen getter in close vicinity to an oxide during thermal reduction under vacuum, as an effective bottom-up method for the production of nanowires arranged in a nanoscale metallic network on a SrTiO3 perovskite surface. We demonstrate that the TiO nanowires crystallize in a highly ordered cubic phase, where single nanowires are aligned along the main crystallographic directions of the SrTiO3 substrate. The dimensions of the nanostructures are easily tunable from single nanometers up to the mesoscopic range by varying the temperature of reduction. The interface between TiO and SrTiO3 (metal and insulator) was found to be atomically sharp providing the unique possibility of the investigation of electronic states, especially since the high conductivity of the TiO nanostructures is maintained after room temperature oxidation. According to the growth model we propose, TiO nanowire formation is possible due to the incongruent sublimation of strontium and crystallographic shearing, triggered by the extremely low oxygen partial pressure (ELOP). The controlled formation of conductive nanowires on a perovskite surface holds technological potential for implementation in memristive devices, organic electronics, or for catalytic applications, and provides insight into the mechanism of nanoscale phase transformations in metal oxides. We believe that the ELOP mechanism of suboxide formation is suitable for the formation of reduced suboxides on other perovskite oxides and for the broader class of transition metal oxides.

Thickness and Stacking Sequence Determination of Exfoliated Dichalcogenides (1T-TaS2, 2H-MoS2) Using Scanning Transmission Electron Microscopy

Layered transition metal dichalcogenides (TMDs) have attracted interest due to their promise for future electronic and optoelectronic technologies. As one approaches the two-dimensional (2D) limit, thickness and local topology can greatly influence the macroscopic properties of a material. To understand the unique behavior of TMDs it is therefore important to identify the number of atomic layers and their stacking in a sample. The goal of this work is to extract the thickness and stacking sequence of TMDs directly by matching experimentally recorded high-angle annular dark-field scanning transmission electron microscope images and convergent-beam electron diffraction (CBED) patterns to quantum mechanical, multislice scattering simulations. Advantageously, CBED approaches do not require a resolved lattice in real space and are capable of neglecting the thickness contribution of amorphous surface layers. Here we demonstrate the crystal thickness can be determined from CBED in exfoliated 1T-TaS2 and 2H-MoS2 to within a single layer for ultrathin ≲9 layers and ±1 atomic layer (or better) in thicker specimens while also revealing information about stacking order-even when the crystal structure is unresolved in real space.

Spark Plasma Sintering Apparatus Used for the Formation of Strontium Titanate Bicrystals

A spark plasma sintering apparatus was used as a novel method for diffusion bonding of two single crystals of strontium titanate to form bicrystals with one twist grain boundary. This apparatus utilizes high uniaxial pressure and a pulsed direct current for rapid consolidation of material. Diffusion bonding of strontium titanate bicrystals without fracture, in a spark plasma sintering apparatus, is possible at high pressures due to the unusual temperature dependent plasticity behavior of strontium titanate. We demonstrate a method for the successful formation of bicrystals at accelerated time scales and lower temperatures in a spark plasma sintering apparatus compared to bicrystals formed by conventional diffusion bonding parameters. Bond quality was verified by scanning electron microscopy. A clean and atomically abrupt interface containing no secondary phases was observed using transmission electron microscopy techniques. Local changes in bonding across the boundary was characterized by simultaneous scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy.

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy

We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants with high precision. Using multislice STEM imaging and diffraction simulations of β-Ga₂O₃ and SrTiO₃, we show that selecting a small range of low scattering angles can make the contrast of the defect-containing atomic columns substantially more depth-dependent. The origin of the depth-dependence is the de-channeling of electrons due to the existence of a point defect in the atomic column, which creates extra "ripples" at low scattering angles. The highest contrast of the point defect can be achieved when the de-channeling signal is captured using the 20-40mrad detection angle range. The effect of sample thickness, crystal orientation, local strain, probe convergence angle, and experimental uncertainty to the depth-dependent contrast of the point defect will also be discussed. The proposed technique therefore opens new possibilities for highly precise 3D structural characterization of individual point defects in functional materials.

Phase transitions via selective elemental vacancy engineering in complex oxide thin films

Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

Oxidation-state sensitive imaging of cerium dioxide by atomic-resolution low-angle annular dark field scanning transmission electron microscopy

Low-angle annular dark field (LAADF) scanning transmission electron microscopy (STEM) imaging is presented as a method that is sensitive to the oxidation state of cerium ions in CeO2 nanoparticles. This relationship was validated through electron energy loss spectroscopy (EELS), in situ measurements, as well as multislice image simulations. Static displacements caused by the increased ionic radius of Ce(3+) influence the electron channeling process and increase electron scattering to low angles while reducing scatter to high angles. This process manifests itself by reducing the high-angle annular dark field (HAADF) signal intensity while increasing the LAADF signal intensity in close proximity to Ce(3+) ions. This technique can supplement STEM-EELS and in so doing, relax the experimental challenges associated with acquiring oxidation state information at high spatial resolutions.

Assessment of Strain-Generated Oxygen Vacancies Using SrTiO₃ Bicrystals

Atomic-scale defects strongly influence the electrical and optical properties of materials, and their impact can be more pronounced in localized dimensions. Here, we directly demonstrate that strain triggers the formation of oxygen vacancies in complex oxides by examining the tilt boundary of SrTiO3 bicrystals. Through transmission electron microscopy and electron energy loss spectroscopy, we identify strains along the tilt boundary and oxygen vacancies in the strain-imposed regions between dislocation cores. First-principles calculations support that strains, irrespective of their type or sign, lower the formation energy of oxygen vacancies, thereby enhancing vacancy formation. Finally, current-voltage measurements confirm that such oxygen vacancies at the strained boundary result in a decrease of the nonlinearity of the I-V curve as well as the resistivity. Our results strongly indicate that oxygen vacancies are preferentially formed and are segregated at the regions where strains accumulate, such as heterogeneous interfaces and grain boundaries.

Effect of interface atomic structure on the electronic properties of nano-sized metal-oxide interfaces

We report that the size dependence of electronic properties at nanosized metal-semiconducting oxide interfaces is significantly affected by the interface atomic structure. The properties of interfaces with two orientations are compared over size range of 20-200 nm. The difference in interface atomic structure leads to electronic structure differences that alter electron transfer paths. Specifically, interfaces with a higher concentration of undercoordinated Ti result in enhanced tunneling due to the presence of defect states or locally reduced tunnel barrier widths. This effect is superimposed on the mechanisms of size dependent properties at such small scales.

Cs-corrected scanning transmission electron microscopy investigation of dislocation core configurations at a SrTiO(3)/MgO heterogeneous interface

Heterostructures and interfacial defects in a 40-nm-thick SrTiO(3) (STO) film grown epitaxially on a single-crystal MgO (001) were investigated using aberration-corrected scanning transmission electron microscopy and geometric phase analysis. The interface of STO/MgO was found to be of the typical domain-matching epitaxy with a misfit dislocation network having a Burgers vector of ½ a(STO) <100>. Our studies also revealed that the misfit dislocation cores at the heterogeneous interface display various local cation arrangements in terms of the combination of the extra-half inserting plane and the initial film plane. The type of the inserting plane, either the SrO or the TiO(2) plane, alters with actual interfacial conditions. Contrary to previous theoretical calculations, the starting film planes were found to be dominated by the SrO layer, i.e., a SrO/MgO interface. In certain regions, the starting film planes change to the TiO(2)/MgO interface because of atomic steps at the MgO substrate surface. In particular, four basic misfit dislocation core configurations of the STO/MgO system have been identified and discussed in relation to the substrate surface terraces and possible interdiffusion. The interface structure of the system in reverse--MgO/STO--is also studied and presented for comparison.

Observation of electrically-inactive interstitials in Nb-doped SrTiO3

Despite rapid recent progress, controlled dopant incorporation and attainment of high mobility in thin films of the prototypical complex oxide semiconductor SrTiO3 remain problematic. Here, analytical scanning transmission electron microscopy is used to study the local atomic and electronic structure of Nb-doped SrTiO3 both in ideally substitutionally doped bulk single crystals and epitaxial thin films. The films are deposited under conditions that would yield highly stoichiometric undoped SrTiO3, but are nevertheless insulating. The Nb incorporation in such films was found to be highly inhomogeneous on nanoscopic length-scales, with large quantities of what we deduce to be interstitial Nb. Electron energy loss spectroscopy reveals changes in the electronic density of states in Nb-doped SrTiO3 films compared to undoped SrTiO3, but without the clear shift in the Fermi edge seen in bulk single crystal Nb-doped SrTiO3. Analysis of atomic-resolution annular dark-field images allows us to conclude that the interstitial Nb is in the Nb(0) state, confirming that it is electrically inactive. We argue that this approach should enable future work establishing the vitally needed relationships between synthesis/processing conditions and electronic properties of Nb-doped SrTiO3 thin films.

Determining on-axis crystal thickness with quantitative position-averaged incoherent bright-field signal in an aberration-corrected STEM

An accurate determination of specimen thickness is essential for quantitative analytical electron microscopy. Here we demonstrate that a position-averaged incoherent bright-field signal recorded on an absolute scale can be used to determine the thickness of on-axis crystals with a precision of ±1.6 nm. This method measures both the crystalline and the noncrystalline parts (surface amorphous layers) of the sample. However, it avoids the systematic error resulting from surface plasmon contributions to the inelastic mean-free-path thickness estimated by electron energy loss spectroscopy.

Lithium storage in Li4Ti5O12 spinel: the full static picture from electron microscopy

The full static picture of Li storage in Li(4)Ti(5)O(12) is derived using the latest spherical aberration-corrected scanning transmission electron microscopy and first-principles calculations. The accommodation of the additional Li(+) is directly visualized and the distribution of electrons introduced by lithium insertion deduced. Moreover, Li(4)Ti(5)O(12) is found to transform into Li(7)Ti(5)O(12) on lithiation by developing a dislocation-free coherent hetero-interface.

Efficient elastic imaging of single atoms on ultrathin supports in a scanning transmission electron microscope

Mono-atomic-layer membranes such as graphene offer new opportunities for imaging and detecting individual light atoms in transmission electron microscopes (TEM). For such applications where multiple scattering and diffraction effects are weak, we evaluate the detection efficiency and interpretability of single atom images for the most common detector geometries using quantitative quantum mechanical simulations. For well-resolved and atomically-thin specimens, the low angle annular dark field (LAADF) detector can provide a significant increase in signal-to-noise over other common detector geometries including annular bright field and incoherent bright field. This dramatically improves the visibility of organic specimens on atomic-layer membranes. Simulations of Adenosine Triphosphate (ATP) imaged under ideal conditions indicate the minimal dose requirements for elastic imaging by STEM or conventional TEM still exceed previously reported dose limits.

2D atomic mapping of oxidation states in transition metal oxides by scanning transmission electron microscopy and electron energy-loss spectroscopy

Using a combination of high-angle annular dark-field scanning transmission electron microscopy and atomically resolved electron energy-loss spectroscopy in an aberration-corrected transmission electron microscope we demonstrate the possibility of 2D atom by atom valence mapping in the mixed valence compound Mn3O4. The Mn L(2,3) energy-loss near-edge structures from Mn2+ and Mn3+ cation sites are similar to those of MnO and Mn2O3 references. Comparison with simulations shows that even though a local interpretation is valid here, intermixing of the inelastic signal plays a significant role. This type of experiment should be applicable to challenging topics in materials science, such as the investigation of charge ordering or single atom column oxidation states in, e.g., dislocations.

Local analysis of the edge dislocation core in BaTiO(3) thin film by STEM-EELS

The a <100> edge dislocation core formed in an epitaxial BaTiO(3) (BTO) thin film grown on a substrate was investigated by scanning transmission electron microscopy combined with electron energy-loss spectroscopy. Elemental analysis using core-loss spectrum indicates that the atomic ratios of O/Ti and Ba/Ti are decreased at the dislocation core. The near-edge fine structure of the oxygen K-edge recorded from the dislocation core differs slightly from that of relaxed BTO region, which suggests that Ba-O bonding is decreased at the dislocation core. The structure of the dislocation core is discussed using a high-angle annular dark-field image and the electron energy-loss spectroscopy results.

Electron scattering at dislocations in LaAlO3/SrTiO3 interfaces

We report experimental investigations of the effects of microstructural defects and of disorder on the properties of 2D electron gases at oxide interfaces. The cross section for scattering of electrons at dislocations in LaAlO(3)/SrTiO(3) interfaces has been measured and found to equal approximately 5 nm. Our experiments reveal that the transport properties of these electron gases are strongly influenced by scattering at dislocation cores.

Particle size determination using TEM: a discussion of image acquisition and analysis for the novice microscopist

As nanoparticle synthesis capabilities advance, there is an increasing need for reliable nanoparticle size distribution analysis. Transmission electron microscopy (TEM) can be used to directly image nanoparticles at scales approaching a single atom. However, the advantage gained by being able to "see" these nanoparticles comes with several tradeoffs that must be addressed and balanced. For effective nanoparticle characterization, the proper selection of imaging type (bright vs dark field), magnification, and analysis method (manual vs automated) is critical. These decisions control the measurement resolution, the contrast between the particle and background, the number of particles in each image, the subsequent analysis efficiency, and the proper determination of the particle-background boundary and affect the significance of electron beam damage to the sample. In this work, the relationship between the critical decisions required for TEM analysis of small nanoparticles and the statistical effects of these factors on the resulting size distribution is presented.