Defect structures in ZnO studied by high-resolution structural and spectroscopic imaging

Metal Substitutions (M = Al, Ga, In; Sn, Ge; and Mn, Fe, Co) in ZnS: Sphalerite versus Wurtzite Formation

A series of Zn1-xMxS polycrystalline samples were synthesized via a solid-state reaction in closed vessels to examine the solubility of foreign M cations within the wurtzite ZnS structure, employing quenching or slow cooling processes to favor specific polymorphs. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses revealed diverse structural behaviors across different cations. Group 13 elements (Al and Ga) formed solid solutions with a wurtzite structure, while In showed complex layer stacking defects. For 3d magnetic cations (Mn, Fe, and Co), a broad solubility range in the hexagonal structure was noted for Mn, whereas Fe and Co more readily formed cubic structures, with solubilities similar to Mn in the sphalerite form. Despite structural differences, magnetic susceptibilities and spin freezing temperatures for Fe and Co were comparable. Group 14 elements showed varied behaviors: Sn was insoluble in ZnS, as attested by unchanged unit cell parameters and surface crystallite Sn, whereas Ge only formed in the cubic phase with a solubility limit of x ≈ 0.2. The study discusses these variations in solubility and structure in terms of oxidation states, ionic-covalent radius, and coordination preferences in sulfides.

Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO

The maximum efficiency of solar cells utilizing a single layer for photovoltaic conversion is given by the single junction Shockley-Queisser limit. In tandem solar cells, a stack of materials with different band gaps contribute to the conversion, enabling tandem cells to exceed the single junction Shockley-Queisser limit. An intriguing variant of this approach is to embed semiconducting nanoparticles in a transparent conducting oxide (TCO) solar cell front contact. This alternative route would enhance the functionality of the TCO layer, allowing it to participate directly in photovoltaic conversion via photon absorption and charge carrier generation in the nanoparticles. Here, we demonstrate the functionalization of ZnO through incorporation of either ZnFe2O4 spinel nanoparticles (NPs) or inversion domain boundaries (IDBs) decorated by Fe. Diffuse reflectance spectroscopy and electron energy loss spectroscopy show that samples containing spinel particles and samples containing IDBs decorated by Fe both display enhanced absorption in the visible range at around 2.0 and 2.6 eV. This striking functional similarity was attributed to the local structural similarity around Fe-ions in spinel ZnFe2O4 and at Fe-decorated basal IDBs. Hence, functional properties of the ZnFe2O4 arise already for the two-dimensional basal IDBs, from which these planar defects behave like two-dimensional spinel-like inclusions in ZnO. Cathodoluminescence spectra reveal an increased luminescence around the band edge of spinel ZnFe2O4 when measuring on the spinel ZnFe2O4 NPs embedded in ZnO, whereas spectra from Fe-decorated IDBs could be deconvoluted into luminescence contributions from bulk ZnO and bulk ZnFe2O4.

Intrinsic Magnetic (EuIn)As Nanowire Shells with a Unique Crystal Structure

In the pursuit of magneto-electronic systems nonstoichiometric magnetic elements commonly introduce disorder and enhance magnetic scattering. We demonstrate the growth of (EuIn)As shells, with a unique crystal structure comprised of a dense net of Eu inversion planes, over InAs and InAs_1-xSb_x core nanowires. This is imaged with atomic and elemental resolution which reveal a prismatic configuration of the Eu planes. The results are supported by molecular dynamics simulations. Local magnetic and susceptibility mappings show magnetic response in all nanowires, while a subset bearing a DC signal points to ferromagnetic order. These provide a mechanism for enhancing Zeeman responses, operational at zero applied magnetic field. Such properties suggest that the obtained structures can serve as a preferred platform for time-reversal symmetry broken one-dimensional states including intrinsic topological superconductivity.

Formation of contact and multiple cyclic cassiterite twins in SnO2-based ceramics co-doped with cobalt and niobium oxides

Contact and multiple cyclic twins of cassiterite commonly form in SnO₂-based ceramics when SnO₂ is sintered with small additions of cobalt and niobium oxides (dual doping). In this work, it is shown that the formation of twins is a two-stage process that starts with epitaxial growth of SnO₂ on CoNb₂O₆ and Co₄Nb₂O₉ seeds (twin nucleation stage) and continues with the fast growth of (101) twin contacts (twin growth stage). Both secondary phases form below the temperature of enhanced densification and SnO₂ grain growth; CoNb₂O₆ forms at ∼700°C and Co₄Nb₂O₉ at ∼900°C. They are structurally related to the rutile-type cassiterite and can thus trigger oriented (epitaxial) growth (local recrystallization) of SnO₂ domains in different orientations on a single seed particle. While oriented growth of cassiterite on columbite-type CoNb₂O₆ grains can only result in the formation of contact twins, the Co₄Nb₂O₉ grains with a structure comparable with that of corundum represent suitable sites for the nucleation of contact and multiple cyclic twins with coplanar or alternating morphology. The twin nucleation stage is followed by fast densification accompanied by significant SnO₂ grain growth above 1300°C. The twin nuclei coarsen to large twinned grains as a result of the preferential and fast growth of the low-energy (101) twin contacts. The solid-state diffusion processes during densification and SnO₂ grain growth are controlled by the formation of point defects and result in the dissolution of the twin nuclei and the incorporation of Nb⁵⁺ and Co²⁺ ions into the SnO₂ matrix in the form of a solid solution. In this process, the twin nuclei are erased and their role in the formation of twins is shown only by irregular segregation of Co and Nb to the twin boundaries and inside the cassiterite grains, and Co,Nb-enrichment in the cyclic twin cores.

Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors

The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn_kIn₂O_k+3 (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the k value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of k is discussed, even in the lowest term of the series (k = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In³⁺ are evaluated.

Phonon Scattering and Electron Doping by 2D Structural Defects in In/ZnO

In/ZnO bulk compounds have been synthesized using a simple solid-state process. In this study, both the structural features and thermoelectric properties of the Zn_1-xIn_xO series with ultralow indium content (0 ≤ x ≤ 0.02) have been studied. High-angle annular dark-field scanning transmission electron microscopy analyses highlight that indium has the ability to create multiple basal plane and pyramidal defects that produce ZnO domains with inverted polarity starting from dopant concentrations as low as 0.25 atom %. Interestingly, the formation of parallel inversion boundaries consisting of InO₆ octahedra in the ZnO₄ tetrahedra matrix is responsible for phonon scattering while increasing electrical conductivity, thereby enhancing the thermoelectric properties. This effect of multiple extended two-dimensional defects on the thermoelectric properties of ZnO is reported for the first time with such low indium doping. On the chemistry side, the present results point toward a lack of In solubility in the ZnO structure. Moreover, this study is a step forward to the synthesis of other thermoelectric compounds where dopant-induced planar defects in bulk transition metal compounds have the potential to enhance both phonon scattering and electronic conductivity.

Zigzag inversion domain boundaries in indium zinc oxide-based nanowires: structure and formation

Existing models for the crystal structure of indium zinc oxide (IZO) and indium iron zinc oxide (IFZO) conflict with electron microscopy data. We propose a model based on imaging and spectroscopy of IZO and IFZO nanowires and verify it using density functional theory. The model features a {121 [symbol: see text]} "zigzag" layer, which is an inversion domain boundary containing 5-coordinate indium and/or iron atoms. Higher [symbol: see text] values are observed for greater proportion of iron. We suggest a mechanism of formation in which the basal inclusion and the zigzag diffuse inward together from the surface of the nanowire.