Why changes in bond lengths and cohesion lead to core-level shifts in metals, and consequences for the spatial difference method

Electrostatic Gating of Phosphorene Polymorphs

The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.

Direct Measurement of Electronic Band Structures at Oxide Grain Boundaries

Grain boundaries (GBs) modulate the macroscopic properties in polycrystalline materials because they have different atomic and electronic structures from the bulk. Despite the progress on the understanding of GB atomic structures, knowledge of the localized electronic band structures is still lacking. Here, we experimentally characterized the atomic structures and the band gaps of four typical GBs in α-Al₂O₃ by scanning transmission electron microscopy and valence electron energy-loss spectroscopy (EELS). It was found that the band gaps of the GBs are narrowed by 0.5-2.1 eV compared with that of 8.8 eV in the bulk. By combing core-loss EELS with first-principles calculations, we elucidated that the band gap reductions directly correlate with the decrease of the coordination numbers of Al and O ions at the GBs. These results provide in-depth understanding between the local atomic and electronic band structures for GBs and demonstrate a novel electronic-structure analysis for crystalline defects.

Mapping Chemical Bonds in Semiconductor Devices by Monitoring the Shifts of EELS Edges

Scanning transmission electron microscopy (STEM) in combination with electron energy-loss spectroscopy (EELS) can deliver information about variations of bonding at the nm scale. This is typically performed by analyzing the electron-loss near edge structure (ELNES) of given EELS edges. The present paper demonstrates an alternative way of a bonding examination through monitoring the EELS onset positions. Two conditions are essential for their accurate measurement. One (hardware) is using the dual EELS instrumentation that provides near simultaneous acquisition of low-loss and core-loss spectra. Another (software) is the least-square fitting of observed spectra to a reference spectrum. The combination of these hardware and software techniques reveals the positions of EELS onsets with the precision sufficient for mapping tiny variations of bonding. The paper shows that the method is capable of helping to solve practical tasks of nanoscale engineering like the analysis of modern CMOS devices.

Enhanced hydrogen adsorption on graphene by manganese and manganese vanadium alloy decoration

In this work, two kinds of novel manganese decorated (G + Mn) and manganese-vanadium co-decorated (G + MnV) graphene composites are synthesized by in situ wet chemical reduction, and their hydrogen storage properties and microstructures are characterized by Sievert-type adsorption apparatus, BET, SEM, TEM/STEM, EDX and EELS. Compared with pristine graphene, Mn decoration marginally increases the hydrogen adsorption capacity of graphene at room temperature and 4 MPa hydrogen pressure from 0.25 wt% to 0.36 wt%. On the other hand, the co-decoration of Mn and V increases the room temperature hydrogen storage capacity of graphene significantly to 1.81 wt% under 4 MPa hydrogen pressure, which is 1.56 wt% higher than the capacity of pristine graphene. The microstructures and valence states of the decorated Mn and Mn-V nanoparticles are investigated by TEM, EDX and EELS analyses, and strong interactions between the decorated nanoparticles and graphene are observed. Based on the results from structural analyses, potential enhancement mechanisms are suggested in terms of the catalytic effects of nanoparticles on graphene hydrogen adsorption. Given the relatively low cost of Mn and V metals compared to noble metals such as Pd, Pt and Au, these results demonstrate a low cost and effective way to significantly enhance the room temperature hydrogen adsorption properties of graphene for potential hydrogen storage applications.

Advanced electron crystallography through model-based imaging

The increasing need for precise determination of the atomic arrangement of non-periodic structures in materials design and the control of nanostructures explains the growing interest in quantitative transmission electron microscopy. The aim is to extract precise and accurate numbers for unknown structure parameters including atomic positions, chemical concentrations and atomic numbers. For this purpose, statistical parameter estimation theory has been shown to provide reliable results. In this theory, observations are considered purely as data planes, from which structure parameters have to be determined using a parametric model describing the images. As such, the positions of atom columns can be measured with a precision of the order of a few picometres, even though the resolution of the electron microscope is still one or two orders of magnitude larger. Moreover, small differences in average atomic number, which cannot be distinguished visually, can be quantified using high-angle annular dark-field scanning transmission electron microscopy images. In addition, this theory allows one to measure compositional changes at interfaces, to count atoms with single-atom sensitivity, and to reconstruct atomic structures in three dimensions. This feature article brings the reader up to date, summarizing the underlying theory and highlighting some of the recent applications of quantitative model-based transmisson electron microscopy.

In situ observation of electron beam-induced phase transformation of CaCO3 to CaO via ELNES at low electron beam energies

It is demonstrated that energy-filtered transmission electron microscope enables following of in situ changes of the Ca-L2,3 edge which can originate from variations in both local symmetry and bond lengths. Low accelerating voltages of 20 and 40 kV slow down radiation damage effects and enable study of the start and finish of phase transformations. We observed electron beam-induced phase transformation of single crystalline calcite (CaCO3) to polycrystalline calcium oxide (CaO) which occurs in different stages. The coordination of Ca in calcite is close to an octahedral one streched along the <111> direction. Changes during phase transformation to an octahedral coordination of Ca in CaO go along with a bond length increase by 5 pm, where oxygen is preserved as a binding partner. Electron loss near-edge structure of the Ca-L2,3 edge show four separated peaks, which all shift toward lower energies during phase transformation at the same time the energy level splitting increases. We suggest that these changes can be mainly addressed to the change of the bond length on the order of picometers. An important pre-condition for such studies is stability of the energy drift in the range of meV over at least 1 h, which is achieved with the sub-Ångström low-voltage transmission electron microscope I prototype microscope.

Advanced electron microscopy for advanced materials

The idea of this Review is to introduce newly developed possibilities of advanced electron microscopy to the materials science community. Over the last decade, electron microscopy has evolved into a full analytical tool, able to provide atomic scale information on the position, nature, and even the valency atoms. This information is classically obtained in two dimensions (2D), but can now also be obtained in 3D. We show examples of applications in the field of nanoparticles and interfaces.

Independent component analysis: a new possibility for analysing series of electron energy loss spectra

A complementary approach is proposed for analysing series of electron energy-loss spectra that can be recorded with the spectrum-line technique, across an interface for instance. This approach, called blind source separation (BSS) or independent component analysis (ICA), complements two existing methods: the spatial difference approach and multivariate statistical analysis. The principle of the technique is presented and illustrations are given through one simulated example and one real example.

Bismuth embrittlement of copper is an atomic size effect

Embrittlement by the segregation of impurity elements to grain boundaries is one of a small number of phenomena that can lead to metallurgical failure by fast fracture. Here we settle a question that has been debated for over a hundred years: how can minute traces of bismuth in copper cause this ductile metal to fail in a brittle manner? Three hypotheses for Bi embrittlement of Cu exist: two assign an electronic effect to either a strengthening or weakening of bonds, the third postulates a simple atomic size effect. Here we report first principles quantum mechanical calculations that allow us to reject the electronic hypotheses, while supporting a size effect. We show that upon segregation to the grain boundary, the large Bi atoms weaken the interatomic bonding by pushing apart the Cu atoms at the interface. The resolution of the mechanism underlying grain boundary weakening should be relevant for all cases of embrittlement by oversize impurities.

How to optimize the experimental design of quantitative atomic resolution TEM experiments?

A quantitative measure is proposed to evaluate and optimize the design of quantitative atomic resolution TEM experiments. It aims at precise measurement of unknown structure parameters. Specifically, the proposed measure quantifies the statistical precision with which positions of atom columns can be estimated. The optimal design is then given by the combination of microscope settings for which this precision is highest. The proposed measure is also used to find out if new instrumental developments improve the precision as compared to existing methods.

Is atomic resolution transmission electron microscopy able to resolve and refine amorphous structures?

Atomic resolution transmission electron microscopy, even with an aberration free microscope, is only able to resolve and refine amorphous structures at the atomic level for very small foil thicknesses. Then, a precision of the order of 0.01 A is possible, but this may require long recording times, especially for light atoms. For larger thicknesses, amorphous structures can in principle only be resolved and refined using electron tomography.

Electron energy-loss spectroscopic profiling of thin film structures: 0.39 nm line resolution and 0.04 eV precision measurement of near-edge structure shifts at interfaces

The method of energy-loss spectroscopic profiling of interfaces, planar defects and thin film structures in a transmission electron microscope with an imaging filter is introduced. Ways to calculate true chemical profiles with near-atomic line resolution are described. An application to the perovskite system (La,Ca)MnO(3)/SrTiO(3) demonstrates that the technical merit of this method is the simultaneous achievement of high resolution (down to 0.39nm line resolution), high chemical sensitivity (around 1at% standard deviation) and very high precision in the measurement of shifts of edge onsets and energy-loss near-edge structure details (down to 0.04eV). The combination of these characteristics makes the method a powerful tool for the quantification of diffusion and segregation of elements on the atomic scale in a variety of materials systems.

Successful application of spatial difference technique to electron energy-loss spectroscopy studies of Mo/SrTiO3 interfaces

The electron energy-loss near-edge structure (ELNES) of Mo/SrTiO3 interfaces has been studied using high spatial resolution electron energy-loss spectroscopy (EELS) in a dedicated scanning transmission electron microscope. Thin films of Mo with a thickness of 50 nm were grown on (001)-orientated SrTiO3 surfaces by molecular beam epitaxy at 600 degrees C. High-resolution transmission electron microscopy revealed that the interfaces were atomically abrupt with the (110)Mo plane parallel to the substrate surface. Ti-L2,3 ( approximately 460 eV), O-K ( approximately 530 eV), Sr-L2,3 ( approximately 1950 eV) and Mo-L2,3 ( approximately 2500 eV) absorption edges were acquired by using the Gatan Enfina parallel EELS system with a CCD detector. The interface-specific components of the ELNES were extracted by employing the spatial difference method. The interfacial Ti-L2,3 edge shifted to lower energy values and the splitting due to crystal field became less pronounced compared to bulk SrTiO3, which indicated that the Ti atoms at the interface were in a reduced oxidation state and that the symmetry of the TiO6 octahedra was disturbed. No interfacial Sr-L2,3 edge was observed, which may demonstrate that Sr atoms do not participate in the interfacial bonding. An evident interface-specific O-K edge was found, which differs from that of the bulk in both position (0.8 +/- 0.2 eV positive shift) and shape. In addition, a positive shift (0.9 +/- 0.3 eV) occurred for the interfacial Mo-L2,3, revealing an oxidized state of Mo at the interface. Our results indicated that at the interface SrTiO3 was terminated with TiO2. The validity of the spatial difference technique is discussed and examined by introducing subchannel drift intentionally.

The separation of surface and bulk contributions in ELNES spectra

We present a method to separate surface from volume contributions in the fine structure of ionization edges in electron energy loss spectrometry (ELNES). It is based on spectra taken at two positions with different surface-to-volume ratio. Contrary to the similar spatial difference method it uses well defined scaling factors, allowing an estimate of the errors propagated into the result.

Separation of pure elemental and oxygen influenced signal in ELNES

The energy loss near edge structure (ELNES) of many elements is strongly influenced by the presence of oxygen or other elements at surfaces, grain boundaries, or in the bulk material. The presented investigation deals mainly with the influence of oxygen at the surface. A method for the separation of both, the pure bulk signal and the oxidized surface signal, was evaluated and tested on Al, Cu, Mg, and Si. A comparison of experimental data with ab initio bandstructure calculations and other proofs of the accuracy of ELNES separation are presented. Influences of error propagations were tested and are exemplarily given for Al and Si.