Molecular Disorder in Crystalline Thin Films of an Asymmetric BTBT Derivative

Thickness Dependent Structural Transition in Ph-BTBT-10 Thin Films and Stabilization of the Ubiquitous Interface Bilayer

The influence of the film/substrate interface and the role of film thickness on the structural transition temperature for thin films of the asymmetric BTBT derivative 7-decyl-2-phenyl[1]benzothieno[3,2-b][1]-benzothiophene (Ph-BTBT-10) have been addressed by using Kelvin probe force microscopy (KPFM) and synchrotron grazing incidence wide angle X-ray scattering (GIWAXS). Our data strongly suggest that the structural transformation from a single-layer phase to the thermodynamically stable bilayer structure develops from the bottom of the film to its surface. Contrary to observations in other organic semiconductor films, notably, the thinner the Ph-BTBT-10 film, the lower is the transition temperature. This unusual behavior is attributed to the ubiquitous presence of a bilayer at the substrate interface. The evolution over time of an ultrathin film with ≈3 nm nominal thickness (below the interfacial bilayer completion) shows that molecular diffusion and rearrangement at room temperature lead to the bilayer stacking within hours, a result that further supports the role of the bilayer interface on the structural transition from single-layer to bilayer structure. Our findings highlight that both aging and thermal annealing processes need to be optimized based on the specific thickness of the Ph-BTBT-10 film.

Multiphase Coexistence in an Ionic Liquid: 1-Decyl-3-methylimidazolium Nitrate

Complicated phase transitions were observed in a single-component 1-decyl-3-methylimidazolium nitrate ([C10mim][NO3]) ionic liquid (IL) using Raman spectroscopy and synchrotron small- and wide-angle X-ray scattering (SWAXS). Time-resolved synchrotron SWAXS could distinguish the phase transitions depending upon the cooling rate. Low-Q peaks representing a few kinds of layered structures were decomposed. Multiphase coexistence was observed in [C10mim][NO3] at specific cooling rates (8-9 K/min). Ionic liquid crystals (ILCs), hybrid-layered crystals, and hexagonal close-packed structures coexisted simultaneously. At the cooling rate region, the reentrant phase transition of the ILC phase upon heating was observed.

Exploring the phase behavior of C8-BTBT-C8 at ambient and high temperatures: insights and challenges from molecular dynamics simulations

C8-BTBT-C8 is one promising candidate for the development of high-performance electronic devices based on thin-film technologies. Its monoclinic polymorph has a well-established role in thin-film growth. Yet, quite little information is available about its dynamics on the molecular scale, and the structures of the mesophases which form at high temperature (about 100 K above ambient temperature). The present study is devoted to the analysis of such phases, with the ultimate goal of developing molecular models. Already at ambient temperature, our molecular dynamics simulations reveal a rich conformational behavior of the alkyl side chains, with gauche conformations as leading structural defects. Heating promotes the formation of a stacking faulted mesophase (380 K), and a smectic phase, at 385 K, upon side chain melting. Although more disordered, this phase bears several analogies with the smectic A phase, experimentally observed at 382.5 K. At higher temperatures, the increase in configurational disorder is brought by molecular diffusion and other phenomena, finally leading to an isotropic molten phase. Our in-depth analysis, complemented by hot-stage polarizing microscopy data, provides interesting insights into this material, highlighting the challenges associated with the modeling of soft semiconducting systems.

Control of Polar/Antipolar Layered Organic Semiconductors by the Odd-Even Effect of Alkyl Chain

Some rodlike organic molecules exhibit exceptionally high layered crystallinity when composed of a link between π-conjugated backbone (head) and alkyl chain (tail). These molecules are aligned side-by-side unidirectionally to form self-organized polar monomolecular layers, providing promising 2D materials and devices. However, their interlayer stacking arrangements have never been tunable, preventing the unidirectional arrangements of molecules in whole crystals. Here, it is demonstrated that polar/antipolar interlayer stacking can be systematically controlled by the alkyl carbon number n, when the molecules are designed to involve effectively weakened head-to-head affinity. They exhibit remarkable odd-even effect in the interlayer stacking: alternating head-to-head and tail-to-tail (antipolar) arrangement in odd-n crystals, and uniform head-to-tail (polar) arrangement in even-n crystals. The films show excellent field-effect transistor characteristics presenting unique polar/antipolar dependence and considerably improved subthreshold swing in the polar films. Additionally, the polar films present enhanced second-order nonlinear optical response along normal to the film plane. These findings are key for creating polarity-controlled optoelectronic materials and devices.

Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications

Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.

Flip-flop dynamics in smectic liquid-crystal organic semiconductors revealed by molecular dynamics simulations

Asymmetric liquid-crystal (LC) organic semiconductors, such as 2-decyl-7-(p-tolyl)-[1]benzothieno[3,2-b][1]benzothiophene (pTol-BTBT-C10), exhibit high mobilities exceeding 10 cm2 V-1 s-1. The LC phases play important roles in thermal stability and self-assembly ordering during film deposition and annealing. In this study, we show molecular dynamics simulations of pTol-BTBT-C10 and reveal a unique mechanism of the molecular flip-flop motion at the smectic E/smectic B phase transition.

Polar Polymorphism: A New Intermediate Structure toward the Thin-Film Phase in Asymmetric Benzothieno[3,2-b][1]-benzothiophene Derivatives

Understanding structure and polymorphism is relevant for any organic device optimization, and it is of particular relevance in 7-decyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) since high carrier mobility in Ph-BTBT-10 thin films has been linked to the structural transformation from the metastable thin-film phase to the thermodynamically stable bilayer structure via thermal annealing. We combine here a systematic nanoscale morphological analysis with local Kelvin probe force microcopy (KPFM) that demonstrates the formation of a polar polymorph in thin films as an intermediate structure for thicknesses lower than 20 nm. The polar structure develops with thickness a variable amount of structural defects in the form of individual flipped molecules (point defects) or sizable polar domains, and evolves toward the reported nonpolar thin-film phase. The direct experimental evidence is supported by electronic structure density functional theory calculations. The structure of the film has dramatic effects on the electronic properties, leading to a decrease in the film work function (by up to 1 eV) and a considerable broadening of the occupied molecular orbitals, attributed to electrostatic disorder. From an advanced characterization point of view, KPFM stands out as a valuable tool for evaluating electrostatic disorder and the conceivable emergence of polar polymorphs in organic thin films. The emergence of polar assemblies introduces a critical consideration for other asymmetric BTBT derivatives, which may be pivotal to understanding the structure-property relationships in organic field-effect transistors (OFETs). A precise determination of any polar assemblies close to the dielectric interface is critical for the judicious design and upgrading of high-performance OFETs.

Interlayer Sliding Phonon Drives Phase Transition in the Ph-BTBT-10 Organic Semiconductor

In the field of organic electronics, the semiconductor 7-decyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) has become a benchmark due to its high charge mobility and chemical stability in thin film devices. Its phase diagram is characterized by a crystal phase with a bilayer structure that at high temperature transforms into a Smectic E liquid crystal with monolayer structure. As the charge transport properties appear to depend on the phase present in the thin film, the transition has been the subject of structural and computational studies. Here such a process has been investigated by polarized low frequency Raman spectroscopy, selectively probing the intermolecular dynamics of the two phases. The spectroscopic observations demonstrate the key role played by a displacive component of the transition, with the interpenetration of the crystal bilayers driven by lattice phonon mode softening followed by the intralayer rearrangement of the molecule rigid cores into the herringbone motif of the liquid crystal. The mechanism can be related to the effectiveness of thermal annealing to restore the crystal phase in films.

Meniscus-Guided Deposition of Organic Semiconductor Thin Films: Materials, Mechanism, and Application in Organic Field-Effect Transistors

Solution-processable organic semiconductors are one of the promising materials for the next generation of organic electronic products, which call for high-performance materials and mature processing technologies. Among many solution processing methods, meniscus-guided coating (MGC) techniques have the advantages of large-area, low-cost, adjustable film aggregation, and good compatibility with the roll-to-roll process, showing good research results in the preparation of high-performance organic field-effect transistors. In this review, the types of MGC techniques are first listed and the relevant mechanisms (wetting mechanism, fluid mechanism, and deposition mechanism) are introduced. The MGC processes are focused and the effect of the key coating parameters on the thin film morphology and performance with examples is illustrated. Then, the performance of transistors based on small molecule semiconductors and polymer semiconductor thin films prepared by various MGC techniques is summarized. In the third section, various recent thin film morphology control strategies combined with the MGCs are introduced. Finally, the advanced progress of large-area transistor arrays and the challenges for roll-to-roll processes are presented using MGCs. Nowadays, the application of MGCs is still in the exploration stage, its mechanism is still unclear, and the precise control of film deposition still needs experience accumulation.

Conformational Change of Alkyl Chains at Phase Transitions in Thin Films of an Asymmetric Benzothienothiophene Derivative

Among many promising organic semiconducting materials, 2-decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C₁₀) shows outstanding device performances for organic field-effect transistors. This compound has a highly ordered liquid crystalline state, i.e., the smectic E (SmE) phase. Although the transition from the crystalline state to the SmE phase is believed to accompany melting of the alkyl chains, no spectroscopic evidence has been found so far. In this study, the conformational change of the decyl chains in Ph-BTBT-C₁₀ films across the phase transition is analyzed by temperature-dependent measurements in situ using infrared spectroscopy. The spectral analysis reveals that the polycrystalline film has latent conformational disorder (the gauche conformer), the rate of which becomes more pronounced with the heat treatment. As expected, melting of the decyl chains is observed above the transition temperature to the SmE phase. This study also highlights the discovery of some key bands sensitive to the phase transitions in liquid crystalline organic semiconductors.

Light-responsive self-strained organic semiconductor for large flexible OFET sensing array

With the wide application of organic semiconductors (OSCs), researchers are now grappling with a new challenge: design and synthesize OSCs materials with specific functions to satisfy the requirements of high-performance semiconductor devices. Strain engineering is an effective method to improve the semiconductor material’s carrier mobility, which is fundamentally originated from the rearrangement of the atomic packing model of materials under mechanic stress. Here, we design and synthesize a new OSC material named AZO-BTBT-8 based on high-mobility benzo[b]benzo[4,5]thieno[2,3-d]thiophene (BTBT) as the semiconductor backbone. Octane is employed to increase molecular flexibility and solubility, and azobenzene at the other end of the BTBT backbone provides photoisomerization properties and structural balance. Notably, the AZO-BTBT-8 photoisomerization leads to lattice strain in thin-film devices, where exceptional device performance enhancement is realized. On this basis, a large-scale flexible organic field-effect transistor (OFET) device array is fabricated and realizes high-resolution UV imaging with reversible light response.

Strain engineering is effective to improve the carrier mobility of semiconductor materials. Here, the authors demonstrate lattice strain-induced mobility enhancement of an azobenzene compound under photoisomerization and its application in large-scale flexible organic field-effect transistors.

Mobility anisotropy in the herringbone structure of asymmetric Ph-BTBT-10 in solution sheared thin film transistors

Thin films of the organic semiconductor Ph-BTBT-10 and blends of this material with polystyrene have been deposited by a solution shearing technique at low (1 mm s^-1) and high (10 mm s^-1) coating velocities and implemented in organic field-effect transistors. Combined X-ray diffraction and electrical characterisation studies prove that the films coated at low speed are significantly anisotropic. The highest mobility is found along the coating direction, which corresponds to the crystallographic a-axis. In contrast, at high coating speed the films are crystallographically less ordered but with better thin film homogeneity and exhibit isotropic electrical characteristics. Best mobilities are found in films prepared at high coating speeds with the blended semiconductor. This work demonstrates the interplay between the crystal packing and thin film morphology and uniformity and their impact on the device performance.