Atomic Layer Deposition of Zinc Oxide: Study on the Water Pulse Reactions from First-Principles

Modelling the growth reaction pathways of zincone ALD/MLD hybrid thin films: a DFT study

ALD/MLD hybrid thin films can be fabricated by combining atomic layer deposition (ALD) and molecular layer deposition (MLD). Even though this deposition method has been extensively used experimentally, the computational work required to acquire the reaction paths during the thin film deposition process is still in dire demand. We investigated hybrid thin films consisting of diethyl zinc and either 4-aminophenol or hydroquinone using both gas-phase and surface reactions to gain extensive knowledge of the complex phenomena occurring during the process of hybrid thin film deposition. We used density functional theory (DFT) to obtain the activation energies of these kinetic-dependent deposition processes. Different processes of ethyl ligand removal as ethane were discovered, and we found that the hydroxyl group of 4-aminophenol was more reactive than the amino group in the migration of hydrogen to an ethyl ligand within a complicated branching reaction chain.

Zinc Oxide Nanostructure Deposition into Sub-5 nm Vertical Mesopores in Silica Hard Templates by Atomic Layer Deposition

Nanostructures synthesised by hard-templating assisted methods are advantageous as they retain the size and morphology of the host templates which are vital characteristics for their intended applications. A number of techniques have been employed to deposit materials inside porous templates, such as electrodeposition, vapour deposition, lithography, melt and solution filling, but most of these efforts have been applied with pore sizes higher in the mesoporous regime or even larger. Here, we explore atomic layer deposition (ALD) as a method for nanostructure deposition into mesoporous hard templates consisting of mesoporous silica films with sub-5 nm pore diameters. The zinc oxide deposited into the films was characterised by small-angle X-ray scattering, X-ray diffraction and energy-dispersive X-ray analysis.

A first-principles study of the atomic layer deposition of ZnO on carboxyl functionalized carbon nanotubes: the role of water molecules

The formation of heterostructures that combine a large surface area with high surface activity has attracted the attention of the scientific community due to the unique properties and applications of these heterostructures. In this work, we describe - at the atomic level - the full reaction mechanisms involved in the atomic layer deposition of a hybrid ZnO/CNT inorganic structure. First, the pristine CNTs are chemically activated with a carboxylic acid, a process unique to carbon materials. Diethylzinc (DEZ) and water are used as gas-phase precursors to form ZnO. Our findings show that DEZ is physically adsorbed on the CNTs during the exposure of the first precursor. The ligand-exchange to generate chemisorbed ethyl zinc on the O side of the COOH group needs to overcome an energy barrier of 0.06 eV. This is a very small energy if compared to the values (0.5-0.6 eV) obtained in previous studies for OH functionalized surfaces. The height of the barrier is associated with the C[double bond, length as m-dash]O side, which mediates the H proton's exchange from the OH group to the C₂H₅ ligand. Furthermore, upon exposure to the oxidizing agent (H₂O), ethyl zinc exchanges its last ligand as ethane, and it accepts a hydroxyl group through a self-limiting reaction with an energy barrier of 0.88 eV. Notice that the energy barrier of the second ligand-exchange is larger than of the first. We have also analyzed the effect in the saturation of the second precursor: as the quantity of water molecules increases, the long-range interactions tend to repel them. However, the energy barrier of the second ligand-exchange decreases from 1.53 eV to 0.88 eV for one and two water molecules, showing a clear dependence on the oxidizing agent. Non-covalent interactions are used as a tool to visualize the driving forces that take place during each partial reaction in real space. Our study points out the importance of using the right functionalization agent to achieve a controlled and conformal ALD growth at the initial steps of the formation of hybrid ZnO/CNT structures, as well as the role played by the oxidizing agent to lower the energy barrier on the second ALD step.

Atomic Layer Deposition of ZnO on Mesoporous Silica: Insights into Growth Behavior of ZnO via In-Situ Thermogravimetric Analysis

ZnO is a remarkable material with many applications in electronics and catalysis. Atomic layer deposition (ALD) of ZnO on flat substrates is an industrially applied and well-known process. Various studies describe the growth of ZnO layers on flat substrates. However, the growth characteristics and reaction mechanisms of atomic layer deposition of ZnO on mesoporous powders have not been well studied. This study investigates the ZnO ALD process based on diethylzinc (DEZn) and water with silica powder as substrate. In-situ thermogravimetric analysis gives direct access to the growth rates and reaction mechanisms of this process. Ex-situ analytics, e.g., N₂ sorption analysis, XRD, XRF, HRTEM, and STEM-EDX mapping, confirm deposition of homogenous and thin films of ZnO on SiO₂. In summary, this study offers new insights into the fundamentals of an ALD process on high surface area powders.