Strong Modulation of Band Gap, Carrier Mobility and Lifetime in Two-Dimensional Black Phosphorene through Acoustic Phonon Excitation

Modulating Thermal Conductivity via Targeted Phonon Excitation

Thermal conductivity is a critical material property in numerous applications, such as those related to thermoelectric devices and heat dissipation. Effectively modulating thermal conductivity has become a great concern in the field of heat conduction. Here, a quantum modulation strategy is proposed to modulate the thermal conductivity/heat flux by exciting targeted phonons. It shows that the thermal conductivity of graphene can be tailored in the range of 1559 W m-1 K-1 (decreased to 49%) to 4093 W m-1 K-1 (increased to 128%), compared with the intrinsic value of 3189 W m-1 K-1. The effects are also observed for graphene nanoribbons and bulk silicon. The results are obtained through both density functional theory calculations and molecular dynamics simulations. This novel modulation strategy may pave the way for quantum heat conduction.

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Tuning the band gap is of utmost importance for the practicality of two-dimensional materials in the semiconductor industry. In this study, we investigate the ballistic transport and the tunneling magnetoresistance (TMR) properties within a modulated gap in a ferromagnetic/normal/ferromagnetic (F/N/F) phosphorene junction. The theoretical framework is established on a Dirac-like Hamiltonian, the transfer matrix method, and the Landauer-Büttiker formalism to characterize electron behavior and obtain transmittance, conductance and TMR. Our results reveal that a reduction in gap energy leads to an enhancement of conductance for both parallel and anti-parallel magnetization configurations. In contrast, a significant reduction and redshift in TMR have been observed. Notably, the application of an electrostatic field in a gapless phosphorene F/N/F junction induces a blueshift and a slight increase in TMR. Furthermore, we found that introducing an asymmetrically applied electrostatic field in this gapless junction results in a significant reduction and redshift in TMR. Additionally, intensifying the applied magnetic field leads to a substantial increase in TMR. These findings could be useful for designing and implementing practical applications that require precise control over the TMR properties of a phosphorene F/N/F junction with a modulated gap.

Blocking recombination centers by controlling the charge density of a sulfur vacancy in antimony trisulfide

By performing nonadiabatic molecular dynamics combined with ab initio time-domain density functional theory, we have explored the effects of the charge density of a sulfur vacancy on charge trapping and recombination in antimony trisulfide (Sb2S3). The simulations demonstrate that, compared to an antimony vacancy, the sulfur vacancy generates a high charge density trap state within the band gap. This state acts as the recombination center and provides new channels for charge carrier relaxation. Filling the sulfur vacancy with electron donors elevates the defect state to the Fermi level due to the introduced extra electrons. In contrast, the electron acceptor lowers the charge density of the sulfur vacancy by capturing its local electrons, eliminating the charge recombination center and extending the photo-generated charge carrier lifetime. Additionally, compared with electron injection, hole injection can also decrease the charge density of the trap state via neutralizing its local electronic states, eliminate the trap state within the band gap, and suppress nonradiative electron-hole recombination. This study is expected to shed new light on the blocking recombination centers and provide valuable insights into the design of high-performance solar cells.

Exploration of the origin of the excellent charge-carrier dynamics in Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2

Although the efficient separation of electron-hole (e-h) pairs is one of the most sought-after electronic characteristics of materials, due to thermally induced atomic motion and other factors, they do not remain separated during the carrier transport process, potentially leading to rapid carrier recombination. Here, we utilized real-time time-dependent density functional theory in combination with nonadiabatic molecular dynamics (NAMD) to explore the separated dynamic transport path within Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2 caused by the dielectric layer and phonon frequency difference. The underlying origin of the efficient overall water splitting in Y2Ti2O5S2 is systematically explored. We report the existence of the bi-directional e-h separate-path transport, in which, the electrons transport in the Ti2O5 layer and the holes diffuse in the rock-salt layer. This is in contrast to the conventional e-h separated distribution with a crowded transport channel, as observed in SrTiO3 and hybrid perovskites. Such a unique feature finally results in a long carrier lifetime of 321 ns, larger than that in the SrTiO3 perovskite (160 ns) with only one carrier transport channel. This work provides insights into the carrier transport in lead-free perovskites and yields a novel design strategy for next-generation functionalized optoelectronic devices.

In-Situ-Grown Cu Dendrites Plasmonically Enhance Electrocatalytic Hydrogen Evolution on Facet-Engineered Cu2 O

Herein, facet-engineered Cu2 O nanostructures are synthesized by wet chemical methods for electrocatalytic HER, and it is found that the octahedral Cu2 O nanostructures with exposed crystal planes of (111) (O-Cu2 O) has the best hydrogen evolution performance. Operando Raman spectroscopy and ex-situ characterization techniques showed that Cu2 O is reduced during HER, in which Cu dendrites are grown on the surface of the Cu2 O nanostructures, resulting in the better HER performance of O-Cu2 O after HER (O-Cu2 O-A) compared with that of the as-prepared O-Cu2 O. Under illumination, the onset potential of O-Cu2 O-A is ca. 52 mV positive than that of O-Cu2 O, which is induced by the plasmon-activated electrochemical system consisting of Cu2 O and the in-situ generated Cu dendrites. Incident photon-to-current efficiency (IPCE) measurements and the simulated UV-Vis spectrum demonstrate the hot electron injection (HEI) from Cu dendrites to Cu2 O. Ab initio nonadiabatic molecular dynamics (NAMD) simulations revealed the transfer of photogenerated electrons (27 fs) from Cu dendrites to Cu2 O nanostructures is faster than electron relaxation (170 fs), enhancing its surface plasmons activity, and the HEI of Cu dendrites increases the charge density of Cu2 O. These make the energy level of the catalyst be closer to that of H+ /H2 , evidenced by the plasmon-enhanced HER electrocatalytic activity.

How the Stacking Pattern Influences the Charge Transfer Dynamics of van der Waals Heterostructures: An Answer from a Time-Domain Ab Initio Study

Here, we perform a time domain density functional study in conjunction with a non-adiabatic molecular dynamics (NAMD) simulation to investigate the charge carrier dynamics in a series of van der Waals heterostructures made of two-dimensional (2D) SnX2 (X = S or Se)-supported ZrS2, ZrSe2, and ZrSSe monolayers. Results from NAMD simulation reveal delayed electron-hole recombination (in the range of 0.53-2.13 ns) and ultrafast electron/hole transfer processes (electron transfer within 108.3-321.5 fs and hole transfer between 107.6 and 258.8 fs). The most interesting finding of our study is that switching from AB to AA stacking in the heterostructures extends the carrier lifespan by a significant amount. The delayed electron-hole recombination because of the switching stacking pattern can be rationalized by weak electron-phonon coupling, lower non-adiabatic coupling (NAC), and fast decoherence time. Thus, these insightful NAMD studies of excited charge carriers reveal that the stacking pattern variation is an effective tool to develop efficient photovoltaic devices based on 2D van der Waals heterostructures.

Pseudo-heterostructure and condensation of 1D moiré excitons in twisted phosphorene bilayers

Heterostructures are not expected to form in a single homogeneous material. Here, we show that planar pseudo-heterostructures could emerge in a twisted bilayer of phosphorene (tbP), driving in-plane energy and charge transfer. The formation of moiré superlattices combined with electronic anisotropy in tbPs yields one-dimensional (1D) moiré excitons with long radiative and nonradiative lifetimes, large binding energies, and deep moiré potentials. Low-frequency moiré phonons and dynamic moiré potentials are revealed to be responsible for the in-plane energy/charge transfer and exciton dynamics. The 1D moiré excitons are predicted to exhibit Bose-Einstein condensation at high temperatures and may lead to exotic Tonks-Girardeau Bose gases.

A Unified View of Vibrational Spectroscopy Simulation through Kernel Density Estimations

To date, vibrational simulation results constitute more of an experimental support than a predictive tool, as the simulated vibrational modes are discrete due to quantization. This is different from what is obtained experimentally. Here, we propose a way to combine outputs such as the phonon density of states surrogate and peak intensities obtained from ab initio simulations to allow comparison with experimental data by using machine learning. This work is paving the way for using simulated vibrational spectra as a tool to identify materials with defined stoichiometry, enabling the separation of genuine vibrational features of pure phases from morphological and defect-induced signals.

A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic application

The two-dimensional heterostructures with type-II band alignment and super-high carrier mobility offer an updated perspective for photovoltaic devices. Here, based on the first-principles calculation, a novel vertical NGyne/GaSe heterostructure with an intrinsic type-II band alignment, super-high carrier mobility (10⁴cm²V^-1s^-1), and strong visible to ultraviolet light absorption (10⁴-10⁵cm^-1) is constructed. We investigate the electronic structure and the interfacial properties of the NGyne/GaSe heterostructure under electric field and strain. The band offsets and band gap of the NGyne/GaSe heterostructure can be regulated under applied vertical electric field and strain efficiently. Further study reveals that the photoelectric conversion efficiency of the NGyne/GaSe heterostructure is vastly improved under a negative electric field and reaches up to 25.09%. Meanwhile, near-free electron states are induced under a large applied electric field, leading to the NGyne/GaSe heterostructure transform from semiconductors to metal. Our results indicate that the NGyne/GaSe heterostructure will have extremely potential in optoelectronic devices, especially solar cells.

Vacancy-Regulated Charge Carrier Dynamics and Suppressed Nonradiative Recombination in Two-Dimensional ReX2 (X = S, Se)

Point defects in semiconductors usually act as nonradiative charge carrier recombination centers, which severely limit the performance of optoelectronic devices. In this work, by combining time-domain density functional theory with nonadiabatic molecular dynamics simulations, we demonstrate suppressed nonradiative charge carrier recombination and prolonged carrier lifetime in two-dimensional (2D) ReX₂ (X = S, Se) with S/Se vacancies. In particular, a S vacancy introduces a shallow hole trap state in ReS₂, while a Se vacancy introduces both hole and electron trap states in ReSe₂. Photoexcited electrons and holes can be rapidly captured by these defect states, while the release process is slow, which contributes to an elongated photocarrier lifetime. The suppressed charge carrier recombination lies in the vacancy-induced low-frequency phonon modes that weaken electron-phonon coupling, as well as the reduced overlap between electron and hole wave functions that decreases nonadiabatic coupling. This work provides physical insights into the charge carrier dynamics of 2D ReX₂, which may stimulate considerable interest in using defect engineering for future optoelectronic nanodevices.

Ultrafast Charge Transfer and Delayed Recombination in Graphitic-CN/WTe2 van der Waals Heterostructure: A Time Domain Ab Initio Study

In search of an efficient solar energy harvester, we herein performed a time domain density functional study coupled with nonadiabatic molecular dynamics (NAMD) simulation to gain atomistic insight into the charge carrier dynamics of a graphitic carbon nitride (g-CN)-tungsten telluride (WTe₂) van der Waals heterostructure. Our NAMD study predicted ultrafast electron (589 fs) and hole-transfer (807 fs) dynamics in g-CN/WTe₂ heterostructure and a delayed electron-hole recombination process (2.404 ns) as compared to that of the individual g-CN (3 ps) and WTe₂ (0.55 ps) monolayer. The ultrafast charge transfer is due to strong electron-phonon coupling during the charge-transfer process while comparatively weak electron-phonon coupling, sufficient band gap, comparatively lower nonadiabatic coupling (NAC), and fast decoherence time slow down the electron-hole recombination process. The NAMD results of exciton relaxation dynamics are valuable for insightful understanding of charge carrier dynamics and in designing photovoltaic devices based on organic-inorganic 2D van der Waals heterostructures.

Strain modulation of the exciton anisotropy and carrier lifetime in black phosphorene

Manipulating excitons is of great significance to explore the optical properties of 2D materials. In this work, we investigate the excitonic properties and carrier dynamics of bilayer black phosphorene by imposing in-plane biaxial strain. The results show that the strain can modulate not only the contribution of the excitons to optical absorption but also the anisotropic shape of the first exciton. This can be ascribed to the strain effect on the band realignment as well as to changes of the parity and the electron effective mass at the CBM. At the temperature of 300 K, a 3% strain reduces the non-adiabatic coupling between the VBM and CBM and then increases the carrier lifetime by a factor of 13, and the results can be used to estimate the strain effect on the excitonic lifetime. Our results demonstrate that manipulation of the biaxial strain is a promising strategy to modulate the exciton properties of black phosphorene.

Excited state dynamics in monolayer black phosphorus revisited: Accounting for many-body effects

The dynamics of electron-hole recombination in pristine and defect-containing monolayer black phosphorus (ML-BP) has been studied computationally by several groups relying on the one-particle description of electronic excited states. Our recent developments enabled a more sophisticated and accurate treatment of excited states dynamics in systems with pronounced excitonic effects, including 2D materials such as ML-BP. In this work, I present a comprehensive characterization of optoelectronic properties and nonadiabatic dynamics of the ground state recovery in pristine and divacancy-containing ML-BP, relying on the linear-response time-dependent density functional theory description of excited states combined with several trajectory surface hopping methodologies and decoherence correction schemes. This work presents a revision and new implementation of the decoherence-induced surface hopping methodology. Several popular algorithms for nonadiabatic dynamics algorithms are assessed. The kinetics of nonradiative relaxation of lower-lying excited states in ML-BP systems is revised considering the new methodological developments. A general mechanism that explains the sensitivity of the nonradiative dynamics to the presence of divacancy defect in ML-BP is proposed. According to this mechanism, the excited states' relaxation may be inhibited by the presence of energetically close higher-energy states if electronic decoherence is present in the system.