Reversible Photoalignment of Azobenzene in the SURMOF HKUST-1

Unraveling the timescale of the structural photo-response within oriented metal-organic framework films

Fundamental knowledge on the intrinsic timescale of structural transformations in photo-switchable metal-organic framework films is crucial to tune their switching performance and to facilitate their applicability as stimuli-responsive materials. In this work, for the first time, an integrated approach to study and quantify the temporal evolution of structural transformations is demonstrated on an epitaxially oriented DMOF-1-on-MOF film system comprising azobenzene in the DMOF-1 pores (DMOF-1/AB). We employed time-resolved Grazing Incidence Wide-Angle X-Ray Scattering measurements to track the structural response of the DMOF-1/AB film upon altering the length of the azobenzene molecule by photo-isomerization (trans-to-cis, 343 nm; cis-to-trans, 450 nm). Within seconds, the DMOF-1/AB response occurred fully reversible and over several switching cycles by cooperative photo-switching of the oriented DMOF-1/AB crystallites as confirmed further by infrared measurements. Our work thereby suggests a new avenue to elucidate the timescales and photo-switching characteristics in structurally responsive MOF film systems.

Voltage-Controlled Conversion from CDS to MDS in an Azobenzene-Based Organic Memristor for Information Storage and Logic Operations

For organic memristors, non-zero-crossing current-voltage (I-V) curves are often observed, which can be attributed to capacitive effects. If the conversion between the capacitance-dominated state (CDS) and the memristance-dominated state (MDS) can be realized in a controllable manner, more device functions can be obtained. In this work, a two-terminal memristor using a common organic dye, azobenzene (AZB), as the active layer was prepared. It is found that as the applied voltage gradually increases, the device can transition from CDS to MDS. In the low voltage range (<1 V), the device is in CDS, and the capacitance is significantly increased by ∼10⁴ compared to the theoretical value. In the high voltage range (>1 V), the device is in MDS, achieving an HRS (high resistance state)/LRS (low resistance state) resistance ratio of ∼10⁴, and the logic operations are achieved. Through the analysis of the I-V curve, energy diagram of the materials, and computer simulation results, the mechanisms of CDS, MDS, and their conversion are proposed. This work provides an in-depth understanding of the working mechanism of organic memristors and demonstrates the potential of AZB-based organic memristors for information storage and logic display applications.