Point Defects in Two-Dimensional Ruddlesden-Popper Perovskites Explored with Ab Initio Calculations

Structural rigidity, thermochromism and piezochromism of layered hybrid perovskites containing an interdigitated organic bilayer

Layered hybrid perovskites are intensively researched today as highly tunable materials for efficient light harvesting and emitting devices. In classical layered hybrid perovskites, the structural rigidity mainly stems from the crystalline inorganic sublattice, whereas the organic sublattice has a minor contribution to the rigidity of the material. Here, we report two layered hybrid perovskites, (BTa)2PbI4 and (F2BTa)2PbI4, which possess substantially more rigid organic layers due to hydrogen bonding, π-π stacking, and dipole-dipole interactions. These layered perovskites are phase stable under elevated pressures up to 5 GPa and upon temperature lowering down to 80 K. The organic layers, composed of benzotriazole-derived ammonium cations, are among the most rigid in the field of layered hybrid perovskites. We characterize structural rigidity using in situ single-crystal X-ray diffraction during compression up to 5 GPa. Interestingly, the enhanced rigidity of the organic sublattice does not seem to transfer to the inorganic sublattice, leading to an uncommon material configuration with rigid organic layers and deformable inorganic layers. The deformability of the inorganic sublattice is apparent from differences in optical properties between the crystal bulk and surface. Supported by first-principles calculations, we assign these differences to energy transfer processes from the surface to the bulk. The deformability also leads to reversible piezochromism due to shifting of the photoluminescence emission peak with increasing pressure up to 5 GPa, and thermochromism due to narrowing of the photoluminescence emission linewidth with decreasing temperature down to 80 K. This raises the possibility of applying these phase-stable layered hybrid perovskite materials in temperature and/or pressure sensors.

Relaxation of Photoexcited Electron-Hole Pairs at Si(111) Surfaces with Adsorbed Ag Monolayered Clusters of Increasing Size

The efficiency of silicon solar cells is affected by the light absorption and recombination losses of photoexcited charge carries. One possible way to improve the efficiency is through the deposition of transition metal nanoparticles on Si surfaces. Here, we first carry out density functional theory (DFT) calculations to obtain electronic structures for Agn (n = 1-7) monolayered clusters adsorbed on Si(111)/H surfaces. Results are presented in the form of the density of states, band gaps, and light absorption, which allow for the investigation of the interaction of Ag clusters with Si. Different behaviors can be expected depending on the size of the deposited Ag clusters. Overall, the deposition of Ag clusters leads to smaller band gaps, red-shifts, and large increases in light absorption compared to the pristine Si slab. We then study the relaxation dynamics of electron-hole pairs for slabs based on nonadiabatic couplings using the reduced density matrix approach within the Redfield formalism. Nonradiative relaxation rates are noticeably different for various structures and transitions. One observes higher relaxation rates for surfaces with adsorbates than for the pristine Si surface due to charge transfer events involving Ag orbitals. We also compute emission spectra from excited-state relaxation dynamics. The band gap emission is dark for the pristine Si due to the indirect nature of its band gap. The addition of larger Ag clusters breaks the symmetry of Si slabs, enabling indirect gap transitions. These slabs thus exhibit bright band gap emission. The introduction of adsorbates is advantageous for applications in photovoltaics and photocatalysis.

Revisiting Sub-Band Gap Emission Mechanism in 2D Halide Perovskites: The Role of Defect States

Understanding the sub-band gap luminescence in Ruddlesden-Popper 2D metal halide hybrid perovskites (2D HaPs) is essential for efficient charge injection and collection in optoelectronic devices. Still, its origins are still under debate with respect to the role of self-trapped excitons or radiative recombination via defect states. In this study, we characterized charge separation, recombination, and transport in single crystals, exfoliated layers, and polycrystalline thin films of butylammonium lead iodide (BA2PbI4), one of the most prominent 2D HaPs. We combined complementary defect- and exciton-sensitive methods such as photoluminescence (PL) spectroscopy, modulated and time-resolved surface photovoltage (SPV) spectroscopy, constant final state photoelectron yield spectroscopy (CFSYS), and constant light-induced magneto transport (CLIMAT), to demonstrate striking differences between charge separation induced by dissociation of excitons and by excitation of mobile charge carriers from defect states. Our results suggest that the broad sub-band gap emission in BA2PbI4 and other 2D HaPs is caused by radiative recombination via defect states (shallow as well as midgap states) rather than self-trapped excitons. Density functional theory (DFT) results show that common defects can readily occur and produce an energetic profile that agrees well with the experimental results. The DFT results suggest that the formation of iodine interstitials is the initial process leading to degradation, responsible for the emergence of midgap states, and that defect engineering will play a key role in enhancing the optoelectronic properties of 2D HaPs in the future.

Defects in Halide Perovskites: Does It Help to Switch from 3D to 2D?

Two-dimensional (2D) organic-inorganic hybrid iodide perovskites have been put forward in recent years as stable alternatives to their three-dimensional (3D) counterparts. Using first-principles calculations, we demonstrate that equilibrium concentrations of point defects in the 2D perovskites PEA2PbI4, BA2PbI4, and PEA2SnI4 (PEA, phenethylammonium; BA, butylammonium) are much lower than in comparable 3D perovskites. Bonding disruptions by defects are more destructive in 2D than in 3D networks, making defect formation energetically more costly. The stability of 2D Sn iodide perovskites can be further enhanced by alloying with Pb. Should, however, point defects emerge in sizable concentrations as a result of nonequilibrium growth conditions, for instance, then those defects likely hamper the optoelectronic performance of the 2D perovskites, as they introduce deep traps. We suggest that trap levels are responsible for the broad sub-bandgap emission in 2D perovskites observed in experiments.

Dielectric Screening and Charge-Transfer in 2D Lead-Halide Perovskites for Reduced Exciton Binding Energies

Layered lead-halide perovskites have shown tremendous success as an active material for optoelectronics. This is attributed to the electronic structure of the inorganic sublattice and large exciton binding energies due to quantum and dielectric confinement. Expanding functionalities for applications that depend on free-carrier generation requires new material design routes to decrease the binding energy. Here we use electronic structure methods with model Bethe-Salpeter equation (BSE) to examine the contributions of the dielectric screening and charge-transfer excited-states to the exciton binding energy of phenylethylammonium (PEA2PbBr4) and naphthlethylammonium (NEA2PbBr4) lead-bromide perovskites. Our model BSE calculations show that NEA introduces hole acceptor states which impose charge-transfer character on the exciton along with larger dielectric screening. This substantially decreases the exciton binding compared to PEA. This result suggests the use of organic cations with high dielectric screening and hole acceptor states as a viable strategy for reducing exciton binding energies in two-dimensional halide perovskites.

Prediction and Characterization of Two-Dimensional Zn2VN3

A two-dimensional (2D) monolayer of a novel ternary nitride Zn₂VN₃ is computationally designed, and its dynamical and thermal stability is demonstrated. A synthesis strategy is proposed based on experimental works on production of ternary nitride thin films, calculations of formation and exfoliation energies, and ab initio molecular dynamics simulations. A comprehensive characterization of 2D Zn₂VN₃, including investigation of its optoelectronic and mechanical properties, is conducted. It is shown that 2D Zn₂VN₃ is a semiconductor with an indirect band gap of 2.75 eV and a high work function of 5.27 eV. Its light absorption covers visible and ultraviolet regions. The band gap of 2D Zn₂VN₃ is found to be well tunable by applied strain. At the same time 2D Zn₂VN₃ possesses high stability against mechanical loads, point defects, and environmental impacts. Considering the unique properties found for 2D Zn₂VN₃, it can be used for application in optoelectronic and straintronic nanodevices.

Atomistic Description of the Impact of Spacer Selection on Two-Dimensional (2D) Perovskites: A Case Study of 2D Ruddlesden-Popper CsPbI3 Analogues

Inorganic CsPbI₃ perovskites have become desirable for use in photovoltaic devices due to their excellent optoelectronic properties and increased resilience to thermal degradation compared to organic-inorganic perovskites. An effective strategy for improving both the performance and the phase stability of CsPbI₃-based perovskites is through introducing a diverse set of spacing cations separating inorganic layers in their two-dimensional (2D) analogues. In this work, CsPbI₃-based 2D Ruddlesden-Popper perovskites were investigated using three aromatic spacers, 2-thiophenemethylamine (ThMA), 2-thiopheneformamidine (ThFA), and benzylammonium, fluorinated through para substitution (pFBA). Our findings highlight the importance of the local bonding environment between organic spacers and the PbI₆ octahedra. Additionally, we demonstrated the importance of energetic alignment between electronic states on spacing cations and inorganic layers for optoelectronic applications. Furthermore, thermoelectric performance was investigated revealing a preference for p-type ThFA and n-type ThMA and pFBA configurations.