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Alvarez A, Lédée F, García-Batlle M, López-Varo P, Gros-Daillon E, Guillén JM, Verilhac JM, Lemercier T, Zaccaro J, Marsal LF, Garcia-Belmonte G, Almora O. Ionic Field Screening in MAPbBr 3 Crystals Revealed from Remnant Sensitivity in X-ray Detection. ACS PHYSICAL CHEMISTRY AU 2023; 3:386-393. [PMID: 37520316 PMCID: PMC10375880 DOI: 10.1021/acsphyschemau.3c00002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2023] [Revised: 04/17/2023] [Accepted: 04/18/2023] [Indexed: 08/01/2023]
Abstract
Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr3) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times.
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Affiliation(s)
- Agustin
O. Alvarez
- Institute
of Advanced Materials, Universitat Jaume
I, 12071 Castelló, Spain
| | - Ferdinand Lédée
- Grenoble
Alpes University, CEA, LETI, DOPT, F38000 Grenoble, France
| | | | - Pilar López-Varo
- Institut
Photovoltaïque d’Ile-de-France (IPVF), 91120 Palaiseau, France
| | | | | | | | - Thibault Lemercier
- Grenoble
Alpes University, CNRS, Grenoble INP, Institut Néel, F38042 Grenoble, France
| | - Julien Zaccaro
- Grenoble
Alpes University, CNRS, Grenoble INP, Institut Néel, F38042 Grenoble, France
| | - Lluis F. Marsal
- Department
of Electronic, Electric and Automatic Engineering, Universitat Rovira i Virgili, 43007 Tarragona, Spain
| | | | - Osbel Almora
- Department
of Electronic, Electric and Automatic Engineering, Universitat Rovira i Virgili, 43007 Tarragona, Spain
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2
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Sakhatskyi K, John RA, Guerrero A, Tsarev S, Sabisch S, Das T, Matt GJ, Yakunin S, Cherniukh I, Kotyrba M, Berezovska Y, Bodnarchuk MI, Chakraborty S, Bisquert J, Kovalenko MV. Assessing the Drawbacks and Benefits of Ion Migration in Lead Halide Perovskites. ACS ENERGY LETTERS 2022; 7:3401-3414. [PMID: 36277137 PMCID: PMC9578653 DOI: 10.1021/acsenergylett.2c01663] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2022] [Accepted: 09/01/2022] [Indexed: 05/30/2023]
Abstract
Since the inception of the unprecedented rise of halide perovskites for photovoltaic research, ion migration has shadowed this material class with undesirable hysteresis and degradation effects, limiting its practical implementations. Unfortunately, the localized doping and electrochemical reactions triggered by ion migration cause many more undesirable effects that are often unreported or misinterpreted because they deviate from classical semiconductor behavior. In this Perspective, we provide a concise overview of such effects in halide perovskites, such as operational instability in photovoltaics, polarization-induced abnormal external quantum efficiency in light-emitting diodes, and energy channel shift and anomalous sensitivities in hard radiation detection. Finally, we highlight a unique use case of exploiting ion migration as a boon to design emerging memory technologies such as memristors for information storage and computing.
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Affiliation(s)
- Kostiantyn Sakhatskyi
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Rohit Abraham John
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Antonio Guerrero
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12006 Castelló, Spain
| | - Sergey Tsarev
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Sebastian Sabisch
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
| | - Tisita Das
- Materials
Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, HBNI, Allahabad, Uttar Pradesh 211019, India
| | - Gebhard J. Matt
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Sergii Yakunin
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Ihor Cherniukh
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Martin Kotyrba
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Yuliia Berezovska
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Maryna I. Bodnarchuk
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Sudip Chakraborty
- Materials
Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, HBNI, Allahabad, Uttar Pradesh 211019, India
| | - Juan Bisquert
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12006 Castelló, Spain
- Yonsei
Frontier Lab, Yonsei University, Seoul 03722, South Korea
| | - Maksym V. Kovalenko
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
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