Chemically Engraving Semiconductor Nanowires: Using Three-Dimensional Nanoscale Morphology to Encode Functionality from the Bottom Up

A comprehensive review on the biomedical frontiers of nanowire applications

This comprehensive review examines the immense capacity of nanowires, nanostructures characterized by unbounded dimensions, to profoundly transform the field of biomedicine. Nanowires, which are created by combining several materials using techniques such as electrospinning and vapor deposition, possess distinct mechanical, optical, and electrical properties. As a result, they are well-suited for use in nanoscale electronic devices, drug delivery systems, chemical sensors, and other applications. The utilization of techniques such as the vapor-liquid-solid (VLS) approach and template-assisted approaches enables the achievement of precision in synthesis. This precision allows for the customization of characteristics, which in turn enables the capability of intracellular sensing and accurate drug administration. Nanowires exhibit potential in biomedical imaging, neural interfacing, and tissue engineering, despite obstacles related to biocompatibility and scalable manufacturing. They possess multifunctional capabilities that have the potential to greatly influence the intersection of nanotechnology and healthcare. Surmounting present obstacles has the potential to unleash the complete capabilities of nanowires, leading to significant improvements in diagnostics, biosensing, regenerative medicine, and next-generation point-of-care medicines.

Insight into refractive index modulation as route to enhanced light coupling in semiconductor nanowires

Recent developments in chemical processes to prepare single-crystalline nanowire (NW) superlattices (SLs) have discovered a range of unique nanophotonic properties. In particular, diameter-modulated silicon NW geometric SLs (GSLs) have shown their ability to produce complex interference effects through which enhanced light manipulation is achieved. Here, we re-imagine the origin of the complex interference effects occurring in shallow-modulated GSLs and present a refractive index modulation as a key deciding factor. We introduce the design of a NW refractive index SL (ISL), a hypothetical uniform-diameter NW in which the refractive index is periodically modulated, and explain the coupling effect between Mie resonance and bound guided state. We apply the ISL concept to other NW SL systems and suggest potential routes to bring substantial enhancements in lasing activities.

Programming Semiconductor Nanowire Composition with Sub-100 nm Resolution via the Geode Process

We demonstrate the vapor-liquid-solid growth of single-crystalline i-Si, i-Si/n-Si, and Si_xGe_1-x/Si_yGe_1-y nanowires via the Geode process. By enabling nanowire growth on the large internal surface area of a microcapsule powder, the Geode process improves the scalability of semiconductor nanowire manufacturing while maintaining nanoscale programmability. Here, we show that heat and mass transport limitations introduced by the microcapsule wall are negligible, enabling the same degree of compositional control for nanowires grown inside microcapsules and on conventional flat substrates. Efficient heat and mass transport also minimize the structural variations of nanowires grown in microcapsules with different diameters and wall thicknesses. Nanowires containing at least 16 segments and segment lengths below 75 nm are demonstrated.

Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter-Modulated Nanowires

We study the thermal conductivity of diameter-modulated Si nanowires to understand the impact of different nanoscale transport mechanisms as a function of nanowire morphology. Our investigation couples transient suspended microbridge measurements of diameter-modulated Si nanowires synthesized via vapor-liquid-solid growth and dopant-selective etching with predictive Boltzmann transport modeling. We show that the presence of a low thermal conductivity phase (i.e., porosity) dominates the reduction in effective thermal conductivity and is supplemented by increased phonon-boundary scattering. The relative contributions of both mechanisms depend on the details of the nanoscale morphology. Our findings provide valuable insights into the factors that govern thermal conduction in complex nanoscale materials.

Roughening transition as a driving factor in the formation of self-ordered one-dimensional nanostructures

Peculiar scenarios in the dynamics of BCC and FCC 1D-nanostructures leading to the formation of ultra-short, and sometimes stable, high-amplitude surface modulations are analysed and the means of achieving the desired periodicity are discussed.

Optically Programmable Plateau-Rayleigh Instability for High-Resolution and Scalable Morphology Manipulation of Silver Nanowires for Flexible Optoelectronics

The ability to engineer microscale and nanoscale morphology upon metal nanowires (NWs) has been essential to achieve new electronic and photonic functions. Here, this study reports an optically programmable Plateau-Rayleigh instability (PRI) to demonstrate a facile, scalable, and high-resolution morphology engineering of silver NWs (AgNWs) at temperatures <150 °C within 10 min. This has been accomplished by conjugating a photosensitive diphenyliodonium nitrate with AgNWs to modulate surface-atom diffusion. The conjugation is UV-decomposable and able to form a cladding of molten salt-like compounds, so that the PRI of the AgNWs can be optically programmed and triggered at a much lower temperature than the melting point of AgNWs. This PRI self-assembly technique can yield both various novel nanostructures from single NW and large-area microelectrodes from the NW network on various substrates, such as a nanoscale dot-dash chain and the microelectrode down to 5 μm in line width that is the highest resolution ever fabricated for the AgNW-based electrode. Finally, the patterned AgNWs as flexible transparent electrodes were demonstrated for a wearable CdS NW photodetector. This study provides a new paradigm for engineering metal micro-/nanostructures, which holds great potential in fabrication of various sophisticated devices.

Abrupt degenerately-doped silicon nanowire tunnel junctions

We have confirmed the presence of narrow, degenerately-doped axial silicon nanowire (SiNW) p-n junctions via off-axis electron holography (EH). SiNWs were grown via the vapor-solid-liquid (VLS) mechanism using gold (Au) as the catalyst, silane (SiH₄), diborane (B₂H₆) and phosphine (PH₃) as the precursors, and hydrochloric acid (HCl) to stabilize the growth. Two types of growth were carried out, and in each case we explored growth with both n/p and p/n sequences. In the first type, we abruptly switched the dopant precursors at the desired junction location, and in the second type we slowed the growth rate at the junction to allow the dopants to readily leave the Au catalyst. We demonstrate degenerately-doped p/n and n/p nanowire segments with abrupt potential profiles of 1.02 ± 0.02 and 0.86 ± 0.3 V, and depletion region widths as narrow as 10 ± 1 nm via EH. Low temperature current-voltage measurements show an asymmetric curvature in the forward direction that resemble planar gold-doped tunnel junctions, where the tunneling current is hidden by a large excess current. The results presented herein show that the direct VLS growth of degenerately-doped axial SiNW p-n junctions is feasible, an essential step in the fabrication of more complex SiNW-based devices for electronics and solar energy.

Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature

Ratcheting effects play an important role in systems ranging from mechanical socket wrenches to biological motor proteins. The underlying principle is to convert a fluctuating, unbiased force into unidirectional motion. Here, we report the ratcheting of electrons at room temperature using a semiconductor nanowire with precisely engineered asymmetry. Modulation of the nanowire diameter creates a cylindrical sawtooth geometry with broken inversion symmetry on a nanometer-length scale. In a two-terminal device, this structure responded as a three-dimensional geometric diode that funnels electrons preferentially in one direction through specular reflection of quasi-ballistic electrons at the nanowire surface. The ratcheting effect causes charge rectification at frequencies exceeding 40 gigahertz, demonstrating the potential for applications such as high-speed data processing and long-wavelength energy harvesting.

Geometric Nanophotonics: Light Management in Single Nanowires through Morphology

Comprehensive control of light-matter interactions at the nanoscale is increasingly important for the development of miniaturized light-based technologies that have applications ranging from information processing to sensing. Control of light in nanoscale structures-the realm of nanophotonics-requires precise control of geometry on a few-nanometer length scale. From a chemist's perspective, bottom-up growth of nanoscale materials from chemical precursors offers a unique opportunity to design structures atom-by-atom that exhibit desired properties. In this Account, we describe our efforts to create chemically and morphologically precise Si nanowires (NWs) with designed nanophotonic properties using a vapor-liquid-solid (VLS) growth process. A synthetic technique termed "Encoded Nanowire Growth and Appearance through VLS and Etching" (ENGRAVE) combines optimized VLS growth, dopant modulation, and dopant-dependent wet-chemical etching to produce NWs with precisely designed diameter modulations, yielding lithographic-like morphological control that can vary from sinusoids to fractals. The ENGRAVE NWs thus provide a versatile playground for coupling, trapping, and directing light in a nanoscale geometry. Previously, the nanophotonic functionality of NWs primarily relied on uniform-diameter structures that exhibit Mie scattering resonances and longitudinally oriented guided modes, two key photonic properties that typically cannot be utilized simultaneously due to their orthogonality. However, when the NW diameter is controllably modulated along the longitudinal axis on a scale comparable to the wavelength of light-a geometry we term a geometric superlattice (GSL)-we found that NWs can exhibit a much richer and tunable set of nanophotonic properties, as described herein. To understand these unique properties, we first summarize the basic optical properties of uniform-diameter NWs using Mie scattering theory and dispersion relations, and we describe both conventional and relatively new microscopy methods that experimentally probe the optical properties of single NWs. Next, delving into the properties of NW GSLs, we summarize their ability to couple a Mie resonance with a guided mode at a select wavevector (or wavelength) dictated by their geometric pitch. The coupling forms a bound guided state (BGS) with a standing wave profile, which allows a NW GSL to serve as a spectrally selective light coupler and to act as optical switch or sensor. We also summarize the capacity of a GSL to trap light by serving as an ultrahigh (theoretically infinite) quality factor optical cavity with an optical bound state in the continuum (BIC), in which destructive interference prevents coupling to and from the far field. Finally, we discuss a future research outlook for using ENGRAVE NWs for nanoscale light control. For instance, we highlight research avenues that could yield light-emitting devices by interfacing a NW-based BIC with emissive materials such as quantum dots, 2D materials, and hybrid perovskite. We also discuss the design of photonic band gaps, generation of high-harmonics with quasi-BIC structures, and the possibility for undiscovered nanophotonic properties and phenomena through more complex ENGRAVE geometric designs.

Optical Bound States in the Continuum with Nanowire Geometric Superlattices

Perfect trapping of light in a subwavelength cavity is a key goal in nanophotonics. Perfect trapping has been realized with optical bound states in the continuum (BIC) in waveguide arrays and photonic crystals; yet the formal requirement of infinite periodicity has limited the experimental realization to structures with macroscopic planar dimensions. We characterize BICs in a silicon nanowire (NW) geometric superlattice (GSL) that exhibits one-dimensional periodicity in a compact cylindrical geometry with a subwavelength diameter. We analyze the scattering behavior of NW GSLs by formulating temporal coupled mode theory to include Lorenz-Mie scattering, and we show that GSL-based BICs can trap electromagnetic energy for an infinite lifetime and exist over a broad range of geometric parameters. Using synthesized NW GSLs tens of microns in length and with variable pitch, we demonstrate the progressive spectral shift and disappearance of Fano resonances in experimental single-NW extinction spectra as a manifestation of BIC GSL modes.

Interplay of Surface Recombination and Diode Geometry for the Performance of Axial p-i-n Nanowire Solar Cells

Nanowires (NWs) with axial p-i-n junctions have been widely explored as microscopic diodes for optoelectronic and solar energy applications, and their performance is strongly influenced by charge recombination at the surface. We delineate how the photovoltaic performance of these diodes is dictated not only by the surface but also by the complex and seemingly counterintuitive interplay of diode geometry, that is, radius ( R) and intrinsic length ( L_i), with the surface recombination velocity ( S). An analytical model to describe these relationships is developed and compared to finite-element simulations, which verify the accuracy and limitations of the model. The dependence of the dark saturation current ( I₀), internal quantum efficiency (IQE), short-circuit current ( I_SC), and open-circuit voltage ( V_OC) on both geometric and recombination parameters demonstrates that no single set of parameters produces optimal performance; instead, various trade-offs in performance are observed. For instance, longer L_i might be expected to produce higher I_SC, yet at high values of S the I_SC declines because of decreases in IQE. Moreover, longer L_i produces a concurrent decline in V_OC regardless of S due to increases in I₀. We also find that I_SC and V_OC trends are radius independent, yet I₀ is directly proportional to R, causing NWs with smaller R to display higher turn-on voltages. The analysis regarding the interplay of these parameters, verified by experimental measurements with various p-i-n geometries and surface treatments, provides clear guidance for the rational design of performance metrics for photodiode and photovoltaic devices.

Mie-coupled bound guided states in nanowire geometric superlattices

All-optical operation holds promise as the future of computing technology, and key components include miniaturized waveguides (WGs) and couplers that control narrow bandwidths. Nanowires (NWs) offer an ideal platform for nanoscale WGs, but their utility has been limited by the lack of a comprehensive coupling scheme with band selectivity. Here, we introduce a NW geometric superlattice (GSL) that allows narrow-band guiding in Si NWs through coupling of a Mie resonance with a bound-guided state (BGS). Periodic diameter modulation creates a Mie-BGS-coupled excitation that manifests as a scattering dark state with a pronounced scattering dip in the Mie resonance. The frequency of the coupled mode, tunable from the visible to near-infrared, is determined by the pitch of the GSL. Using a combined GSL-WG system, we demonstrate spectrally selective guiding and optical switching and sensing at telecommunication wavelengths, highlighting the potential to use NW GSLs for the design of on-chip optical components.

The utility of nanowires for all-optical operation has been limited by a lack of coupling scheme with band selectivity. Here, the authors introduce a nanowire geometric superlattice that allows controlled, narrow-band guiding in silicon nanowires through direct coupling of a Mie resonance with a bound guided state.

Encoding Highly Nonequilibrium Boron Concentrations and Abrupt Morphology in p-Type/n-Type Silicon Nanowire Superlattices

Although silicon (Si) nanowires (NWs) grown by a vapor-liquid-solid (VLS) mechanism have been demonstrated for a range of photonic, electronic, and solar-energy applications, continued progress with these NW-based technologies requires increasingly precise compositional and morphological control of the growth process. However, VLS growth typically encounters problems such as nonselective deposition on sidewalls, inadvertent kinking, unintentional or inhomogeneous doping, and catalyst-induced compositional gradients. Here, we overcome several of these difficulties and report the synthesis of uniform, linear, and degenerately doped Si NW superlattices with abrupt transitions between p-type, intrinsic, and n-type segments. The synthesis of these structures is enabled by in situ chlorination of the NW surface with hydrochloric acid (HCl) at temperatures ranging from 500 to 700 °C, yielding uniform NWs with minimal nonselective growth. Surprisingly, we find the boron (B) doping level in p-type segments to be at least 1 order of magnitude above the solid solubility limit, an effect that we attribute to a high incorporation of B in the liquid catalyst and kinetic trapping of B during crystallization at the liquid-solid interface to yield a highly nonequilibrium concentration. For growth at 510 °C, four-point-probe measurements yield active doping levels of at least 4.5 × 10¹⁹ cm^-3, which is comparable to the phosphorus (P) doping level of n-type segments. Because the B and P dopants are in sufficiently high concentrations for the Si to be degenerately doped, both segments inhibit the etching of Si in aqueous potassium hydroxide (KOH) solution. Moreover, we find that the dopant transitions are abrupt, facilitating nanoscale morphological control in both B- and P-doped segments through selective KOH etching of the NW with a spatial resolution of ∼10 nm. The results presented herein enable the growth of complex, degenerately doped p-n junction nanostructures that can be explored for a variety of advanced applications, such as Esaki diodes, multijunction solar cells, and tunneling field-effect transistors.

Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface

Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent ⟨112⟩ directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.

Fabricating and Controlling Silicon Zigzag Nanowires by Diffusion-Controlled Metal-Assisted Chemical Etching Method

Silicon (Si) zigzag nanowires (NWs) have a great potential in many applications because of its high surface/volume ratio. However, fabricating Si zigzag NWs has been challenging. In this work, a diffusion-controlled metal-assisted chemical etching method is developed to fabricate Si zigzag NWs. By tailoring the composition of etchant to change its diffusivity, etching direction, and etching time, various zigzag NWs can be easily fabricated. In addition, it is also found that a critical length of NW (>1 μm) is needed to form zigzag nanowires. Also, the amplitude of zigzag increases as the location approaches the center of the substrate and the length of zigzag nanowire increases. It is also demonstrated that such zigzag NWs can help the silicon substrate for self-cleaning and antireflection. This method may provide a feasible and economical way to fabricate zigzag NWs and novel structures for broad applications.

Designing Morphology in Epitaxial Silicon Nanowires: The Role of Gold, Surface Chemistry, and Phosphorus Doping

Vertically aligned semiconductor nanowires (NWs) have many potential applications for NW-based technologies, ranging from solar cells to intracellular sensors. Aligned NWs can be fabricated by top-down etching of planar wafers or synthesized from the bottom up using the vapor-liquid-solid (VLS) mechanism to induce epitaxial growth on lattice-matched substrates. The VLS process permits the modulation of dopants along the NW growth axis, which if combined with dopant-dependent wet-chemical etching, can be used to encode precise morphology. However, the synthesis of vertical and linear NWs with complex morphology is nontrivial, requiring control over multiple interdependent aspects of the VLS process. Here, we demonstrate sub-10 nm morphology in ⟨111⟩ epitaxial silicon (Si) NWs grown by the VLS mechanism on (111) Si substrates with gold (Au) catalysts. Using silane (SiH₄), phosphine (PH₃), and hydrochloric acid (HCl) precursor gases at 480 °C, precise morphology is encoded through abrupt phosphorus (P) dopant transitions, which are found to be less than 5 nm in width. The results highlight three mechanistic attributes of the process. First, NW growth in the ⟨111⟩ direction is found to be unstable at high SiH₄ partial pressures and growth rates unless using HCl, which stabilizes NW growth through chlorination of the NW sidewall. Second, aggregated Au deposited on the NW surface by the VLS catalyst is found to be immobile on the chlorinated surface and to impede selective wet-chemical etching by potassium hydroxide (KOH) solution, preventing the design of precise morphology. Third, the aggregation of Au is found to be strongly dependent on the SiH₄ partial pressure and NW growth rate, and values exceeding ∼100 mTorr and ∼150 nm/min, respectively, are required to minimize Au and thereby enable selective wet-chemical etching. Under optimized growth conditions, we find that abrupt, complex, and arbitrary dopant profiles and morphologies can be encoded in vertical Si NWs, and we expect that a variety of electronic and photonic applications can be realized with these designed nanostructures.

Nanoscale silicon for subcellular biointerfaces

Semiconductor nanomaterials are emerging as a class of materials that can push the fundamental limits of current biomedical devices and possibly revolutionize healthcare. In particular, silicon nanostructures have been proven to be attractive systems for integrating nanoscale machines in biology because of their tunable electronic and optical properties, low cytotoxicity, and the vast microfabrication toolbox available for silicon. Studies have demonstrated that the implementation of next-generation silicon-based biomedical devices can benefit from the rational design of their nanoscale components. In this review, we will discuss some recent progress in this area, with a particular focus on the chemical synthesis of new silicon nanostructures and their emerging applications ranging from fundamental biophysical studies to clinical relevance.