Field-Induced Carrier Localization Transition in Dielectric Polymers

Dynamics of Phonon-Assisted Holes Trapping and Transport over Chemical Defects in Polyethylene

Charge trapping and transport over chemical defects in polyethylene have significant impacts on its electrical and dielectric properties. However, the dynamics of this phenomenon and its underlying mechanisms remain unclear. To understand this fundamental aspect, we conducted a time-domain ab initio nonadiabatic molecular dynamics study of phonon-assisted holes dynamics in polyethylene over C═O and C-OH defect states. Our results suggest that the hole transfer and energy fluctuations substantially depend on temperature and local morphology. When the temperature decreases from 300 to 100 K, the hole transfer efficiency and the energy fluctuations are severely suppressed due to the weakened interactions between holes and phonons. Furthermore, amorphous polyethylene exhibits a severe suppression of the hole transfer process compared to crystalline polyethylene. An explanation for the influence of morphology on the hole transfer process can be found in the differences in the hole-phonon coupling and the electronic coupling between two chemical defect states in crystalline and amorphous polyethylene. Advancing the fundamental understanding of the dynamics of hole transfer over chemical effects in polymers is a key to improving their insulating properties for the next-generation high-voltage cables.

Deep Well Trapping of Hot Carriers in a Hexagonal Boron Nitride Coating of Polymer Dielectrics

Polymer dielectrics can be cost-effective alternatives to conventional inorganic dielectric materials, but their practical application is critically hindered by their breakdown under high electric fields driven by excited hot charge carriers. Using a joint experiment-simulation approach, we show that a 2D nanocoating of hexagonal boron nitride (hBN) mitigates the damage done by hot carriers, thereby increasing the breakdown strength. Surface potential decay and dielectric breakdown measurements of hBN-coated Kapton show the carrier-trapping effect in the hBN nanocoating, which leads to an increased breakdown strength. Nonadiabatic quantum molecular dynamics simulations demonstrate that hBN layers at the polymer-electrode interfaces can trap hot carriers, elucidating the observed increase in the breakdown field. The trapping of hot carriers is due to a deep potential well formed in the hBN layers at the polymer-electrode interface. Searching for materials with similar deep well potential profiles could lead to a computationally efficient way to design good polymer coatings that can mitigate breakdown.

High loading BaTiO3 nanoparticles chemically bonded with fluorinated silicone rubber for largely enhanced dielectric properties of polymer nanocomposites

Integrating high-loading dielectric nanoparticles into polar polymer matrices potentially can profit the intrinsic polarization of each phase and allow for greatly enhanced dielectric properties in polymer nanocomposites. It is however challenging to achieve desirable highly filled polar polymer composites because of the lack of efficient approaches to disperse nanoparticles and maintain interfacial compatibility. Here, we report a versatile route to fabricate highly filled barium titanate/fluorinated silicone rubber (BT/FSR) nanocomposites by "thiol-ene click" and isostatic pressing techniques. The loaded BT nanoparticles (from 82 wt% to 90 wt%) are chemically bonded with FSR in the nanocomposites. The existence of the polar group (-CH₂CF₃) of the polymer matrix does not affect the uniform dispersion of the nanoparticles or the good interfacial compatibility. The 90 wt% BT/FSR nanocomposite shows the highest dielectric constant of 57.8 at 10³ Hz, while the loss tangent can be kept below 0.03. Besides, BT/FSR nanocomposites display higher breakdown strength than BT/SR nanocomposites. This work offers a facile strategy towards superior dielectric properties of polymer nanocomposites.

Optically Induced Three-Stage Picosecond Amorphization in Low-Temperature SrTiO3

Photoexcitation can drastically modify potential energy surfaces of materials, allowing access to hidden phases. SrTiO₃ (STO) is an ideal material for photoexcitation studies due to its prevalent use in nanostructured devices and its rich range of functionality-changing lattice motions. Recently, a hidden ferroelectric phase in STO was accessed through weak terahertz excitation of polarization-inducing phonon modes. In contrast, whereas strong laser excitation was shown to induce nanostructures on STO surfaces and control nanopolarization patterns in STO-based heterostructures, the dynamic pathways underlying these optically induced structural changes remain unknown. Here nonadiabatic quantum molecular dynamics reveals picosecond amorphization in photoexcited STO at temperatures as low as 10 K. The three-stage pathway involves photoinduced charge transfer and optical phonon activation followed by nonlinear charge and lattice dynamics that ultimately lead to amorphization. This atomistic understanding could guide not only rational laser nanostructuring of STO but also broader "quantum materials on demand" technologies.