Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Terminal Deuterium Atoms Protect Silicon from Oxidation

In recent years, the hybrid silicon-molecular electronics technology has been gaining significant attention for applications in sensors, photovoltaics, power generation, and molecular electronics devices. However, Si-H surfaces, which are the platforms on which these devices are formed, are prone to oxidation, compromising the mechanical and electronic stability of the devices. Here, we show that when hydrogen is replaced by deuterium, the Si-D surface becomes significantly more resistant to oxidation when either positive or negative voltages are applied to the Si surface. Si-D surfaces are more resistant to oxidation, and their current-voltage characteristics are more stable than those measured on Si-H surfaces. At positive voltages, the Si-D stability appears to be related to the flat band potential of Si-D being more positive compared to Si-H surfaces, making Si-D surfaces less attractive to oxidizing OH- ions. The limited oxidation of Si-D surfaces at negative potentials is interpreted by the frequencies of the Si-D bending modes being coupled to that of the bulk Si surface phonon modes, which would make the duration of the Si-D excited vibrational state significantly less than that of Si-H. The strong surface isotope effect has implications in the design of silicon-based sensing, molecular electronics, and power-generation devices and the interpretation of charge transfer across them.

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

A facile sol-gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about two orders of magnitude, which can be maintained for over 10³ s and without evident deterioration. The tunable nonvolatile multilevel resistive switching phenomena were achieved by modulating the different set voltages of the W/ZnO/ITO memory cell. In addition, the tunable nonvolatile resistive switching behaviors of the ZnO-nanofilm-based W/ZnO/ITO memory cell can be interpreted by the partial formation and rupture of conductive nanofilaments modified by the oxygen vacancies. This work demonstrates that the ZnO-nanofilm-based W/ZnO/ITO memory cell may be a potential candidate for future high-density, nonvolatile, memory applications.

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

RC Bridge Oscillation Memristor Chaotic Circuit for Electrical and Electronic Technology Extended Simulation Experiment

The fourth basic circuit component, the memristor, has been proposed for a long time, but it is not mentioned in the experiment teaching system of Electrical and Electronic Technology. In this paper, an RC bridge oscillation chaotic circuit based on memristor is designed to solve this problem. The dynamical behavior of the circuit system is analyzed using Lyapunov exponents spectrum, bifurcation diagram, phase portrait and Poincaré map. A series of complex dynamical behaviors such as symmetric single-scroll coexistence, asymmetrical single-scroll coexistence, symmetric double-scroll coexistence and asymmetrical limit-cycle coexistence exist in the circuit system. This research plays a critical role in enriching students' knowledge and improving the experiment teaching system of Electrical and Electronic Technology.

Stable Organic Radical for Enhancing Metal-Monolayer-Semiconductor Junction Performance

The preparation of monolayers based on an organic radical and its diamagnetic counterpart has been pursued on hydrogen-terminated silicon surfaces. The functional monolayers have been investigated as solid-state metal/monolayer/semiconductor (MmS) junctions showing a characteristic diode behavior which is tuned by the electronic characteristics of the organic molecule. The eutectic gallium-indium liquid metal is used as a top electrode to perform the transport measurements and the results clearly indicate that the SOMO-SUMO molecular orbitals impact the device performance. The junction incorporating the radical shows an almost two orders of magnitude higher rectification ratio (R(|J_1V/J_-1V|) = 10^4.04) in comparison with the nonradical one (R(|J_1V/J_-1V|) = 10^2.30). The high stability of the fabricated MmS allows the system to be interrogated under irradiation, evidencing that at the wavelength where the photon energy is close to the band gap of the radical there is a clear enhancement of the photoresponse. This is translated into an increase of the photosensitivity (S_ph) value from 68.7 to 269.0 mA/W for the nonradical and radical based systems, respectively.

Smart Eutectic Gallium-Indium: From Properties to Applications

Eutectic gallium-indium (EGaIn), a liquid metal with a melting point close to or below room temperature, has attracted extensive attention in recent years due to its excellent properties such as fluidity, high conductivity, thermal conductivity, stretchability, self-healing capability, biocompatibility, and recyclability. These features of EGaIn can be adjusted by changing the experimental condition, and various composite materials with extended properties can be further obtained by mixing EGaIn with other materials. In this review, not only the are unique properties of EGaIn introduced, but also the working principles for the EGaIn-based devices are illustrated and the developments of EGaIn-related techniques are summarized. The applications of EGaIn in various fields, such as flexible electronics (sensors, antennas, electronic circuits), molecular electronics (molecular memory, opto-electronic switches, or reconfigurable junctions), energy catalysis (heat management, motors, generators, batteries), biomedical science (drug delivery, tumor therapy, bioimaging and neural interfaces) are reviewed. Finally, a critical discussion of the main challenges for the development of EGaIn-based techniques are discussed, and the potential applications in new fields are prospected.

Sweep-Character-Dependent Switching of the Conductance State in Ferrocene-Substituted Thiofluorene Self-Assembled Monolayers

Self-assembled monolayers (SAMs) of ferrocene-substituted thiofluorene on Au(111) exhibit two distinct conductance states (CSs) in two-terminal junctions featuring a sharp tip of eutectic GaIn as the top electrode. The occurrence of these states and the resulting effective rectification by the SAM depend on the way the bias voltage is swept; when the junction is only negatively biased, the original, high CS is preserved, whereas the junction is switched to a low CS when applying only positive biases. This results in an exceptionally high effective rectification ratio (RR) of ∼2100 already at voltages as low as 0.1 V. In contrast, when sweeping the junction alternatingly to the maximum positive and negative bias voltages (as usually performed in the literature), fully symmetric J-V curves are observed. That is, for the present SAM, rectification disappears, and the effective RR is ≈1. It is noteworthy that whether the junction in these symmetric sweeps is in the high or low CS depends on the polarity of the first sweep. We attribute the occurrence of the two CSs to a (quasi) non-reversible oxidation of the ferrocenes in combination with structural changes in the monolayer geometry. The observed sweeping dependence of the conductivity switching is an additional parameter that needs to be considered when interpreting experimental J-V curves, especially when dealing with redox-active systems.

Reliable Memristor Based on Ultrathin Native Silicon Oxide

Memristors based on two-dimensional (2D) materials can exhibit great scalability and ultralow power consumption, yet the structural and thickness inhomogeneity of ultrathin electrolytes lowers the production yield and reliability of devices. Here, we report that the self-limiting amorphous SiO_x (∼2.7 nm) provides a perfect atomically thin electrolyte with high uniformity, featuring a record high production yield. With the guidance of physical modeling, we reveal that the atomic thickness of SiO_x enables anomalous resistive switching with a transition to an analog quasi-reset mode, where the filament stability can be further enhanced using Ag-Au nanocomposite electrodes. Such a picojoule memristor shows record low switching variabilities (C2C and D2D variation down to 1.1 and 2.6%, respectively), good retention at a few microsiemens, and high conductance-updating linearity, constituting key metrics for analog neural networks. In addition, the stable high-resistance state is found to be an excellent source for true random numbers of Gaussian distribution. This work opens up opportunities in mass production of Si-compatible memristors for ultradense neuromorphic and security hardware.