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Hai Y, Gahlot K, Tanchev M, Mutalik S, Tekelenburg EK, Hong J, Ahmadi M, Piveteau L, Loi MA, Protesescu L. Metal-Solvent Complex Formation at the Surface of InP Colloidal Quantum Dots. J Am Chem Soc 2024; 146:12808-12818. [PMID: 38668701 PMCID: PMC11082887 DOI: 10.1021/jacs.4c03325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 04/17/2024] [Accepted: 04/17/2024] [Indexed: 05/09/2024]
Abstract
The surface chemistry of colloidal semiconductor nanocrystals (QDs) profoundly influences their physical and chemical attributes. The insulating organic shell ensuring colloidal stability impedes charge transfer, thus limiting optoelectronic applications. Exchanging these ligands with shorter inorganic ones enhances charge mobility and stability, which is pivotal for using these materials as active layers for LEDs, photodetectors, and transistors. Among those, InP QDs also serve as a model for surface chemistry investigations. This study focuses on group III metal salts as inorganic ligands for InP QDs. We explored the ligand exchange mechanism when metal halide, nitrate, and perchlorate salts of group III (Al, In Ga), common Lewis acids, are used as ligands for the conductive inks. Moreover, we compared the exchange mechanism for two starting model systems: InP QDs capped with myristate and oleylamine as X- and L-type native organic ligands, respectively. We found that all metal halide, nitrate, and perchlorate salts dissolved in polar solvents (such as n-methylformamide, dimethylformamide, dimethyl sulfoxide, H2O) with various polarity formed metal-solvent complex cations [M(Solvent)6]3+ (e.g., [Al(MFA)6]3+, [Ga(MFA)6]3+, [In(MFA)6]3+), which passivated the surface of InP QDs after the removal of the initial organic ligand. All metal halide capped InP/[M(Solvent)6]3+ QDs show excellent colloidal stability in polar solvents with high dielectric constant even after 6 months in concentrations up to 74 mg/mL. Our findings demonstrate the dominance of dissociation-complexation mechanisms in polar solvents, ensuring colloidal stability. This comprehensive understanding of InP QD surface chemistry paves the way for exploring more complex QD systems such as InAs and InSb QDs.
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Affiliation(s)
- Yun Hai
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Kushagra Gahlot
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Mark Tanchev
- Institute
of Chemistry and Chemical Engineering, École
Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Suhas Mutalik
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Eelco K. Tekelenburg
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Jennifer Hong
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Majid Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Laura Piveteau
- Institute
of Chemistry and Chemical Engineering, École
Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Maria Antonietta Loi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Loredana Protesescu
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
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2
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Kim S, Lee K, Gwak N, Shin S, Seo J, Noh SH, Kim D, Lee Y, Kong H, Yeo D, Kim TA, Lee SY, Jang J, Oh N. Colloidal Synthesis of P-Type Zn 3As 2 Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310671. [PMID: 38279779 DOI: 10.1002/adma.202310671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 01/11/2024] [Indexed: 01/28/2024]
Abstract
Zinc pnictides, particularly Zn3As2, hold significant promise for optoelectronic applications owing to their intrinsic p-type behavior and appropriate bandgaps. However, despite the outstanding properties of colloidal Zn3As2 nanocrystals, research in this area is lacking because of the absence of suitable precursors, occurrence of surface oxidation, and intricacy of the crystal structures. In this study, a novel and facile solution-based synthetic approach is presented for obtaining highly crystalline p-type Zn3As2 nanocrystals with accurate stoichiometry. By carefully controlling the feed ratio and reaction temperature, colloidal Zn3As2 nanocrystals are successfully obtained. Moreover, the mechanism underlying the conversion of As precursors in the initial phases of Zn3As2 synthesis is elucidated. Furthermore, these nanocrystals are employed as active layers in field-effect transistors that exhibit inherent p-type characteristics with native surface ligands. To enhance the charge transport properties, a dual passivation strategy is introduced via phase-transfer ligand exchange, leading to enhanced hole mobilities as high as 0.089 cm2 V-1 s-1. This study not only contributes to the advancement of nanocrystal synthesis, but also opens up new possibilities for previously underexplored p-type nanocrystal research.
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Affiliation(s)
- Seongchan Kim
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Kyumin Lee
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Namyoung Gwak
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Seungki Shin
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Jaeyoung Seo
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Sung Hoon Noh
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Doyeon Kim
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Yunseo Lee
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Hyein Kong
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Dongjoon Yeo
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Tae Ann Kim
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-Mobility, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Seung-Yong Lee
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Jaeyoung Jang
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Nuri Oh
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
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3
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Si M, Jee S, Yang M, Kim D, Ahn Y, Lee S, Kim C, Bae I, Baek S. Colloidal InAs Quantum Dot-Based Infrared Optoelectronics Enabled by Universal Dual-Ligand Passivation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306798. [PMID: 38240455 PMCID: PMC10987160 DOI: 10.1002/advs.202306798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 01/06/2024] [Indexed: 04/04/2024]
Abstract
Solution-processed low-bandgap semiconductors are crucial to next-generation infrared (IR) detection for various applications, such as autonomous driving, virtual reality, recognitions, and quantum communications. In particular, III-V group colloidal quantum dots (CQDs) are interesting as nontoxic bandgap-tunable materials and suitable for IR absorbers; however, the device performance is still lower than that of Pb-based devices. Herein, a universal surface-passivation method of InAs CQDs enabled by intermediate phase transfer (IPT), a preliminary process that exchanges native ligands with aromatic ligands on the CQD surface is presented. IPT yields highly stable CQD ink. In particular, desirable surface ligands with various reactivities can be obtained by dispersing them in green solvents. Furthermore, CQD near-infrared (NIR) photodetectors are demonstrated using solution processes. Careful surface ligand control via IPT is revealed that enables the modulation of surface-mediated photomultiplication, resulting in a notable gain control up to ≈10 with a fast rise/fall response time (≈12/36 ns). Considering the figure of merit (FOM), EQE versus response time (or -3 dB bandwidth), the optimal CQD photodiode yields one of the highest FOMs among all previously reported solution-processed nontoxic semiconductors comprising organics, perovskites, and CQDs in the NIR wavelength range.
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Affiliation(s)
- Min‐Jae Si
- Department of Chemical and Biological EngineeringKorea UniversitySeoul02841Republic of Korea
| | - Seungin Jee
- Department of Chemical and Biological EngineeringKorea UniversitySeoul02841Republic of Korea
| | - Minjung Yang
- Department of Chemical and Biological EngineeringKorea UniversitySeoul02841Republic of Korea
| | - Dongeon Kim
- Department of Chemical and Biological EngineeringKorea UniversitySeoul02841Republic of Korea
| | - Yongnam Ahn
- Department of Chemical and Biological EngineeringKorea UniversitySeoul02841Republic of Korea
| | - Seungjin Lee
- Department of Energy EngineeringKorea Institute of Energy Technology (KENTECH)Naju58330Republic of Korea
| | - Changjo Kim
- Nanotechnology and Advanced Spectroscopy Team, C‐PCS, Chemistry DivisionLos Alamos National LaboratoryLos AlamosNMUSA
| | - In‐Ho Bae
- Division of Physical MetrologyKorea Research Institute of Standards and ScienceDaejeon34113Republic of Korea
| | - Se‐Woong Baek
- Department of Chemical and Biological EngineeringKorea UniversitySeoul02841Republic of Korea
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4
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Lee J, Zhao T, Yang S, Muduli M, Murray CB, Kagan CR. One-pot heat-up synthesis of short-wavelength infrared, colloidal InAs quantum dots. J Chem Phys 2024; 160:071103. [PMID: 38380752 DOI: 10.1063/5.0187162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2023] [Accepted: 01/22/2024] [Indexed: 02/22/2024] Open
Abstract
III-V colloidal quantum dots (QDs) promise Pb and Hg-free QD compositions with which to build short-wavelength infrared (SWIR) optoelectronic devices. However, their synthesis is limited by the availability of group-V precursors with controllable reactivities to prepare monodisperse, SWIR-absorbing III-V QDs. Here, we report a one-pot heat-up method to synthesize ∼8 nm edge length (∼6.5 nm in height) tetrahedral, SWIR-absorbing InAs QDs by increasing the [In3+]:[As3+] ratio introduced using commercially available InCl3 and AsCl3 precursors and by decreasing the concentration and optimizing the volume of the reducing reagent superhydride to control the concentration of In(0) and As(0) intermediates through QD nucleation and growth. InAs QDs are treated with NOBF4, and their deposited films are exchanged with Na2S to yield n-type InAs QD films. We realize the only colloidal InAs QD photoconductors with responsivity at the technologically important wavelength of 1.55 μm.
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Affiliation(s)
- J Lee
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - T Zhao
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - S Yang
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - M Muduli
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - C B Murray
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - C R Kagan
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
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5
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Zhang Y, Xia P, Rehl B, Parmar DH, Choi D, Imran M, Chen Y, Liu Y, Vafaie M, Li C, Atan O, Pina JM, Paritmongkol W, Levina L, Voznyy O, Hoogland S, Sargent EH. Dicarboxylic Acid-Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short-Wave Infrared Photodetectors. Angew Chem Int Ed Engl 2024; 63:e202316733. [PMID: 38170453 DOI: 10.1002/anie.202316733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 12/23/2023] [Accepted: 01/03/2024] [Indexed: 01/05/2024]
Abstract
Heavy-metal-free III-V colloidal quantum dots (CQDs) are promising materials for solution-processed short-wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum-size effect tuning of the band gap. However, it has been challenging to achieve uniform InSb CQDs with band gaps below 0.9 eV, as well as to control the surface chemistry of these large-diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to ≥ ${\ge }$ 1400 nm light. Here we adopt solvent engineering to facilitate a diffusion-limited growth regime, leading to uniform CQDs with a band gap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate-halide co-passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25 % at 1400 nm, the highest among III-V CQD photodetectors in this spectral region.
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Affiliation(s)
- Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Benjamin Rehl
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Darshan H Parmar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Dongsun Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Yiqing Chen
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Yanjiang Liu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Chongwen Li
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Watcharaphol Paritmongkol
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
- Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, 21210, Rayong, Thailand
| | - Larissa Levina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto (Scarborough), 1065 Military Trail, M1C 1A4, Toronto, Ontario, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
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6
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Peng L, Wang Y, Ren Y, Wang Z, Cao P, Konstantatos G. InSb/InP Core-Shell Colloidal Quantum Dots for Sensitive and Fast Short-Wave Infrared Photodetectors. ACS NANO 2024. [PMID: 38305195 DOI: 10.1021/acsnano.3c12007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order to unleash the full potential of this technology, there is a need for a material that is environmentally friendly, thus RoHS compliant, and possesses adequate optoelectronic properties to deliver high-performance devices. InSb CQDs hold great potential in view of their RoHS-compliant nature and─in principle─facile access to the SWIR. However, to date progress in realizing high-performance optoelectronic devices, including photodetectors (PDs), has been limited. Here, we have developed a synthesis method for producing size-tunable InSb CQDs with distinct excitonic peaks spanning a wide range from 900 to 1750 nm. To passivate the surface defects and enhance the photoluminescence (PL) efficiency of InSb CQDs, we further designed an InSb/InP core-shell structure. By employing the InSb/InP core-shell CQDs in a photodiode device stack, we report on robust InSb CQD SWIR photodetectors that exhibit an external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, a photoresponse time of 70 ns, and a specific detectivity of 4.4 × 1011 jones.
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Affiliation(s)
- Lucheng Peng
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Yongjie Wang
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Yurong Ren
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Zhuoran Wang
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Pengfei Cao
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Gerasimos Konstantatos
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
- ICREA-Institució Catalana de Recerca i Estudiats Avançats, Lluis Companys 23, 08010 Barcelona, Spain
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7
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Xia P, Zhu T, Imran M, Pina JM, Atan O, Najarian AM, Chen H, Zhang Y, Jung E, Biondi M, Vafaie M, Li C, Grater L, Khatri A, Singh A, Hoogland S, Sargent EH. Arresting Ion Migration from the ETL Increases Stability in Infrared Light Detectors Based on III-V Colloidal Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310122. [PMID: 37983739 DOI: 10.1002/adma.202310122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2023] [Revised: 11/09/2023] [Indexed: 11/22/2023]
Abstract
III-V colloidal quantum dots (CQDs) are of interest in infrared photodetection, and recent developments in CQDs synthesis and surface engineering have improved performance. Here this work investigates photodetector stability, finding that the diffusion of zinc ions from charge transport layers (CTLs) into the CQDs active layer increases trap density therein, leading to rapid and irreversible performance loss during operation. In an effort to prevent this, this work introduces organic blocking layers between the CQDs and ZnO layers; but these negatively impact device performance. The device is then, allowing to use a C60:BCP as top electron-transport layer (ETL) for good morphology and process compatibility, and selecting NiOX as the bottom hole-transport layer (HTL). The first round of NiOX -based devices show efficient light response but suffer from high leakage current and a low open-circuit voltage (Voc) due to pinholes. This work introduces poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) with NiOX NC to form a hybrid HTL, an addition that reduces pinhole formation, interfacial trap density, and bimolecular recombination, enhancing carrier harvesting. The photodetectors achieve 53% external quantum efficiency (EQE) at 970 nm at 1 V applied bias, and they maintain 95% of initial performance after 19 h of continuous illuminated operation. The photodetectors retain over 80% of performance after 80 days of shelf storage.
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Affiliation(s)
- Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Tong Zhu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Hao Chen
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Euidae Jung
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Chongwen Li
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Luke Grater
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Aayushi Khatri
- STMicroelectronics, Digital Front-end Manufacturing & Technology, Technology for Optical Sensors, Fremont, California, 94538, USA
| | - Ajay Singh
- STMicroelectronics, Digital Front-end Manufacturing & Technology, Technology for Optical Sensors, Fremont, California, 94538, USA
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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8
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Cao W, Zhang W, Dong L, Ma Z, Xu J, Gu X, Chen Z. Progress on quantum dot photocatalysts for biomass valorization. EXPLORATION (BEIJING, CHINA) 2023; 3:20220169. [PMID: 38264688 PMCID: PMC10742202 DOI: 10.1002/exp.20220169] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Accepted: 07/31/2023] [Indexed: 01/25/2024]
Abstract
Biomass with abundant reproducible carbon resource holds great promise as an intriguing substitute for fossil fuels in the manufacture of high-value-added chemicals and fuels. Photocatalytic biomass valorization using inexhaustible solar energy enables to accurately break desired chemical bonds or selectively functionalize particular groups, thus emerging as an extremely creative and low carbon cost strategy for relieving the dilemma of the global energy. Quantum dots (QDs) are an outstandingly dynamic class of semiconductor photocatalysts because of their unique properties, which have achieved significant successes in various photocatalytic applications including biomass valorization. In this review, the current development rational design for QDs photocatalytic biomass valorization effectively is highlighted, focusing on the principles of tuning their particle size, structure, and surface properties, with special emphasis on the effect of the ligands for selectively broken chemical bonds (C─O, C─C) of biomass. Finally, the present issues and possibilities within that exciting field are described.
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Affiliation(s)
- Weijing Cao
- Jiangsu Co‐Innovation Center of Efficient Processing and Utilization of Forest ResourcesInternational Innovation Center for Forest Chemicals and MaterialsCollege of Chemical EngineeringNanjing Forestry UniversityNanjingChina
| | - Wenjun Zhang
- Jiangsu Co‐Innovation Center of Efficient Processing and Utilization of Forest ResourcesInternational Innovation Center for Forest Chemicals and MaterialsCollege of Chemical EngineeringNanjing Forestry UniversityNanjingChina
| | - Lin Dong
- Jiangsu Co‐Innovation Center of Efficient Processing and Utilization of Forest ResourcesInternational Innovation Center for Forest Chemicals and MaterialsCollege of Chemical EngineeringNanjing Forestry UniversityNanjingChina
| | - Zhuang Ma
- Leibniz‐Institut für Katalyse e.V.RostockGermany
| | - Jingsan Xu
- School of Chemistry and Physics and Centre for Materials ScienceQueensland University of TechnologyBrisbaneQueenslandAustralia
| | - Xiaoli Gu
- Jiangsu Co‐Innovation Center of Efficient Processing and Utilization of Forest ResourcesInternational Innovation Center for Forest Chemicals and MaterialsCollege of Chemical EngineeringNanjing Forestry UniversityNanjingChina
| | - Zupeng Chen
- Jiangsu Co‐Innovation Center of Efficient Processing and Utilization of Forest ResourcesInternational Innovation Center for Forest Chemicals and MaterialsCollege of Chemical EngineeringNanjing Forestry UniversityNanjingChina
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9
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Muhammad, Choi D, Parmar DH, Rehl B, Zhang Y, Atan O, Kim G, Xia P, Pina JM, Li M, Liu Y, Voznyy O, Hoogland S, Sargent EH. Halide-Driven Synthetic Control of InSb Colloidal Quantum Dots Enables Short-Wave Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306147. [PMID: 37734861 DOI: 10.1002/adma.202306147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 09/13/2023] [Indexed: 09/23/2023]
Abstract
In the III-V family of colloidal quantum dot (CQD) semiconductors, InSb promises access to a wider range of infrared wavelengths compared to many light-sensing material candidates. However, achieving the necessary size, size-dispersity, and optical properties has been challenging. Here the synthetic challenges associated with InSb CQDs are investigated and it is found that uncontrolled reduction of the antimony precursor hampers the controlled growth of CQDs. To overcome this, a synthetic strategy that combines nonpyrophoric precursors with zinc halide additives is developed. The experimental and computational studies show that zinc halide additives decelerate the reduction of the antimony precursor, facilitating the growth of more uniformly sized CQDs. It is also found that the halide choice provides additional control over the strength of this effect. The resultant CQDs exhibit well-defined excitonic transitions in spectral range of 1.26-0.98 eV, along with strong photoluminescence. By implementing a postsynthesis ligand exchange, colloidally stable inks enabling the fabrication of high-quality CQD films are achieved. The first demonstration of InSb CQD photodetectors is presented reaching 75% external quantum efficiency (QE) at 1200 nm, to the knowledge the highest short-wave infrared (SWIR) QE reported among heavy-metal-free infrared CQD-based devices.
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Affiliation(s)
- Muhammad
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Dongsun Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Darshan H Parmar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Benjamin Rehl
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Gahyeon Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Mengsha Li
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Yanjiang Liu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Oleksandr Voznyy
- Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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10
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Leemans J, Respekta D, Bai J, Braeuer S, Vanhaecke F, Hens Z. Formation of Colloidal In(As,P) Quantum Dots Active in the Short-Wave Infrared, Promoting Growth through Temperature Ramps. ACS NANO 2023; 17:20002-20012. [PMID: 37787479 DOI: 10.1021/acsnano.3c05138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2023]
Abstract
Colloidal InAs quantum dots (QDs) are widely studied as a printable optoelectronic material for short-wave infrared (SWIR) that is not restricted by regulations on hazardous substances. Such applications, however, require synthetic procedures that yield QDs with adjustable sizes at the end of the reaction. Here, we show that such one-size-one-batch protocols can be realized through temperature profiles that involve a rapid transition from a lower injection temperature to a higher reaction temperature. By expediting the transition to the reaction temperature and reducing the overall synthesis concentration, we can tune QD sizes from 4.5 to 10 nm, the latter corresponding to a band gap transition at 1600 nm. We argue that the temperature ramps provide a more distinct separation between nucleation at low temperature and growth at high temperature such that larger QDs are obtained by minimizing the nucleation time. The synthetic procedures introduced here will strongly promote the development of a SWIR optoelectronic technology based on InAs QDs, while the use of temperature profiles to steer a colloidal synthesis can find applications well beyond the specific case of InAs QDs.
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Affiliation(s)
- Jari Leemans
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Dobromił Respekta
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Jing Bai
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Simone Braeuer
- A&MS Research Group, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Frank Vanhaecke
- A&MS Research Group, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Zeger Hens
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
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11
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Vafaie M, Morteza Najarian A, Xu J, Richter LJ, Li R, Zhang Y, Imran M, Xia P, Ban HW, Levina L, Singh A, Meitzner J, Pattantyus-Abraham AG, García de Arquer FP, Sargent EH. Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids. Proc Natl Acad Sci U S A 2023; 120:e2305327120. [PMID: 37788308 PMCID: PMC10576070 DOI: 10.1073/pnas.2305327120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Accepted: 09/05/2023] [Indexed: 10/05/2023] Open
Abstract
Heavy-metal-free III-V colloidal quantum dots (CQDs) show promise in optoelectronics: Recent advancements in the synthesis of large-diameter indium arsenide (InAs) CQDs provide access to short-wave infrared (IR) wavelengths for three-dimensional ranging and imaging. In early studies, however, we were unable to achieve a rectifying photodiode using CQDs and molybdenum oxide/polymer hole transport layers, as the shallow valence bandedge (5.0 eV) was misaligned with the ionization potentials of the widely used transport layers. This occurred when increasing CQD diameter to decrease the bandgap below 1.1 eV. Here, we develop a rectifying junction among InAs CQD layers, where we use molecular surface modifiers to tune the energy levels of InAs CQDs electrostatically. Previously developed bifunctional dithiol ligands, established for II-VI and IV-VI CQDs, exhibit slow reaction kinetics with III-V surfaces, causing the exchange to fail. We study carboxylate and thiolate binding groups, united with electron-donating free end groups, that shift upward the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV. Photophysical studies combined with density functional theory show that carboxylate-based passivants participate in strong bidentate bridging with both In and As on the CQD surface. The tuned CQD layer incorporated into a photodiode structure achieves improved performance with EQE (external quantum efficiency) of 35% (>1 μm) and dark current density < 400 nA cm-2, a >25% increase in EQE and >90% reduced dark current density compared to the reference device. This work represents an advance over previous III-V CQD short-wavelength IR photodetectors (EQE < 5%, dark current > 10,000 nA cm-2).
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Affiliation(s)
- Maral Vafaie
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Amin Morteza Najarian
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Jian Xu
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Lee J. Richter
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD20899
| | - Ruipeng Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, New York, NY11973
| | - Yangning Zhang
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Muhammad Imran
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Pan Xia
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Hyeong Woo Ban
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Larissa Levina
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
| | - Ajay Singh
- STMicroelectronics, Digital Front-end Manufacturing and Technology, Technology for Optical Sensors, Fremont, CA94538
| | - Jet Meitzner
- STMicroelectronics, Digital Front-end Manufacturing and Technology, Technology for Optical Sensors, Fremont, CA94538
| | - Andras G. Pattantyus-Abraham
- STMicroelectronics, Digital Front-end Manufacturing and Technology, Technology for Optical Sensors, Fremont, CA94538
| | - F. Pelayo García de Arquer
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Barcelona08860, Spain
| | - Edward H. Sargent
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONM5S 3G4, Canada
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12
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Kim JH, Jung BK, Kim SK, Yun KR, Ahn J, Oh S, Jeon MG, Lee TJ, Kim S, Oh N, Oh SJ, Seong TY. Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2207526. [PMID: 37088787 DOI: 10.1002/advs.202207526] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Revised: 03/14/2023] [Indexed: 05/03/2023]
Abstract
Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD-MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off-current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)-based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD-MOTPs. Herein, an ultrasensitive QD-MOTP fabricated by integrating a high-mobility zinc oxynitride (ZnON)-based MOTP and lead-free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron-hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD-MOTP exhibits an outstanding performance with a responsivity of 1.15 × 105 A W-1 and detectivity of 5.32 × 1016 Jones at a light power density of 2 µW cm-2 under illumination at 905 nm.
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Affiliation(s)
- Jong-Ho Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Su-Kyung Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Kwang-Ro Yun
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seongkeun Oh
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Min-Gyu Jeon
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Tae-Ju Lee
- Department of Nanophotonics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seongchan Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04673, Republic of Korea
| | - Nuri Oh
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04673, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Tae-Yeon Seong
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Nanophotonics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
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13
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Asor L, Liu J, Xiang S, Tessler N, Frenkel AI, Banin U. Zn-Doped P-Type InAs Nanocrystal Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208332. [PMID: 36398421 DOI: 10.1002/adma.202208332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2022] [Revised: 11/04/2022] [Indexed: 06/16/2023]
Abstract
Doped heavy metal-free III-V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p-n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn - enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn2+ replacing In3+ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high-resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short-wave infrared region utilizing heavy-metal free nanocrystal building blocks.
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Affiliation(s)
- Lior Asor
- The Institute of Chemistry and The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Jing Liu
- Department of Physics and Astronomy, Manhattan College, Riverdale, New York, 10471, USA
| | - Shuting Xiang
- Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
- Chemistry Division, Brookhaven National Laboratory, Upton, New York, 11973, USA
| | - Nir Tessler
- The Zisapel Nano-Electronics Center, Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa, 32000, Israel
| | - Anatoly I Frenkel
- Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
- Chemistry Division, Brookhaven National Laboratory, Upton, New York, 11973, USA
| | - Uri Banin
- The Institute of Chemistry and The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel
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14
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Hubbard LR, Allen CJ, Sims AC, Engbrecht KM, O’Hara MJ, Johnson JC, Morrison SS. Detection of SARS-COV-2 by functionally imprinted micelles. MRS COMMUNICATIONS 2022; 12:1160-1167. [PMID: 36311275 PMCID: PMC9592882 DOI: 10.1557/s43579-022-00242-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Accepted: 08/16/2022] [Indexed: 06/16/2023]
Abstract
The near real-time detection of airborne particles-of-interest is needed for avoiding current/future threats. The incorporation of imprinted particles into a micelle-based electrochemical cell produced a signal when brought into contact with particle analytes (such as SARS-COV-2), previously imprinted onto the structure. Nanoamp scales of signals were generated from what may've been individual virus-micelle interactions. The system showed selectivity when tested against similar size and morphology particles. The technology was compatible with airborne aerosol sampling techniques. Overall, the application of imprinted micelle technology could provide near real-time detection methods to a host of possible analytes of interest in the field. Graphical abstract Supplementary Information The online version contains supplementary material available at 10.1557/s43579-022-00242-0.
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Affiliation(s)
- Lance R. Hubbard
- Pacific Northwest National Laboratory, Richland, Washington, DC USA
| | - Caleb J. Allen
- Pacific Northwest National Laboratory, Richland, Washington, DC USA
| | - Amy C. Sims
- Pacific Northwest National Laboratory, Richland, Washington, DC USA
| | | | | | - Jared C. Johnson
- Pacific Northwest National Laboratory, Richland, Washington, DC USA
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15
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Wang W, Gao S, Wang Y, Li Y, Yue W, Niu H, Yin F, Guo Y, Shen G. Advances in Emerging Photonic Memristive and Memristive-Like Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105577. [PMID: 35945187 PMCID: PMC9534950 DOI: 10.1002/advs.202105577] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Revised: 06/06/2022] [Indexed: 05/19/2023]
Abstract
Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.
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Affiliation(s)
- Wenxiao Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Song Gao
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yaqi Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yang Li
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Wenjing Yue
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Hongsen Niu
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Feifei Yin
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yunjian Guo
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Guozhen Shen
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
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16
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Hahn RVH, Rodríguez-Bolívar S, Rodosthenous P, Skibinsky-Gitlin ES, Califano M, Gómez-Campos FM. Optical Absorption in N-Dimensional Colloidal Quantum Dot Arrays: Influence of Stoichiometry and Applications in Intermediate Band Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3387. [PMID: 36234515 PMCID: PMC9565355 DOI: 10.3390/nano12193387] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 09/21/2022] [Accepted: 09/22/2022] [Indexed: 06/16/2023]
Abstract
We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics. We focus on the electronic structure and optical absorption and on their dependence on array dimensionality and surface stoichiometry motivated by the rapid development of experimental techniques to achieve high periodicity and colloidal quantum dot characteristics. The homogeneous response of colloidal quantum dot arrays to different light polarizations is also investigated. Our results shed light on the optical behaviour of these novel multi-dimensional nanomaterials and identify some of them as ideal building blocks for intermediate band solar cells.
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Affiliation(s)
- Rebeca V. H. Hahn
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
| | - Salvador Rodríguez-Bolívar
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
| | - Panagiotis Rodosthenous
- Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
| | - Erik S. Skibinsky-Gitlin
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
| | - Marco Califano
- Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
| | - Francisco M. Gómez-Campos
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
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17
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Sun B, Najarian AM, Sagar LK, Biondi M, Choi MJ, Li X, Levina L, Baek SW, Zheng C, Lee S, Kirmani AR, Sabatini R, Abed J, Liu M, Vafaie M, Li P, Richter LJ, Voznyy O, Chekini M, Lu ZH, García de Arquer FP, Sargent EH. Fast Near-Infrared Photodetection Using III-V Colloidal Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203039. [PMID: 35767306 DOI: 10.1002/adma.202203039] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 06/17/2022] [Indexed: 06/15/2023]
Abstract
Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II-VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III-Vs-if their surface chemistry can be mastered-offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm2 V-1 s-1 ) with a 4× reduction in permittivity compared to PbS CQDs. The resulting photodiodes achieve a response time faster than 2 ns-the fastest photodiode among previously reported CQD photodiodes-combined with an external quantum efficiency (EQE) of 30% at 940 nm.
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Affiliation(s)
- Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Laxmi Kishore Sagar
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Xiyan Li
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Larissa Levina
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Se-Woong Baek
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Chao Zheng
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Ahmad R Kirmani
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA
| | - Randy Sabatini
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Jehad Abed
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Mengxia Liu
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Peicheng Li
- Department of Material Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Lee J Richter
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA
| | - Oleksandr Voznyy
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Mahshid Chekini
- Department of Chemistry, University of Toronto, Toronto, Ontario, M5S 3H6, Canada
| | - Zheng-Hong Lu
- Department of Material Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
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18
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Leemans J, Pejović V, Georgitzikis E, Minjauw M, Siddik AB, Deng Y, Kuang Y, Roelkens G, Detavernier C, Lieberman I, Malinowski PE, Cheyns D, Hens Z. Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200844. [PMID: 35398996 PMCID: PMC9189642 DOI: 10.1002/advs.202200844] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 03/10/2022] [Indexed: 06/14/2023]
Abstract
Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.
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Affiliation(s)
- Jari Leemans
- Physics and Chemistry of NanostructuresGhent UniversityKrijgslaan 281‐S3Gent9000Belgium
| | | | | | - Matthias Minjauw
- Department of Solid State ScienceGhent UniversityKrijgslaan 281‐S1Gent9000Belgium
| | | | - Yu‐Hao Deng
- Physics and Chemistry of NanostructuresGhent UniversityKrijgslaan 281‐S3Gent9000Belgium
| | | | - Gunther Roelkens
- Photonics Research GroupGhent UniversityTechnologiepark‐Zwijnaarde 126Gent9052Belgium
| | | | | | | | | | - Zeger Hens
- Physics and Chemistry of NanostructuresGhent UniversityKrijgslaan 281‐S3Gent9000Belgium
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19
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Greytak AB, Abiodun SL, Burrell JM, Cook EN, Jayaweera NP, Islam MM, Shaker AE. Thermodynamics of nanocrystal–ligand binding through isothermal titration calorimetry. Chem Commun (Camb) 2022; 58:13037-13058. [DOI: 10.1039/d2cc05012a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Manipulations of nanocrystal (NC) surfaces have propelled the applications of colloidal NCs across various fields such as bioimaging, catalysis, electronics, and sensing applications.
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Affiliation(s)
- Andrew B. Greytak
- Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA
| | - Sakiru L. Abiodun
- Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA
| | - Jennii M. Burrell
- Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA
| | - Emily N. Cook
- Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA
| | - Nuwanthaka P. Jayaweera
- Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA
| | - Md Moinul Islam
- Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA
| | - Abdulla E Shaker
- Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, USA
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