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Bonis AD, Curcio M, Galasso A, Caggiano N, Lettino A, Dolce P, Mollica D, Pace ML, Santagata A. Laser Nanostructuring of Titanium Surfaces for Enhanced Bioactive Applications. MATERIALS (BASEL, SWITZERLAND) 2025; 18:2362. [PMID: 40429098 DOI: 10.3390/ma18102362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2025] [Revised: 05/07/2025] [Accepted: 05/08/2025] [Indexed: 05/29/2025]
Abstract
Laser nanostructuring via Laser-Induced Periodic Surface Structures (LIPSS), generated using femtosecond laser pulses, has been investigated as a method for precisely modifying titanium surfaces. By adjusting parameters such as the fluence and pulse number of the laser beam, it is feasible to tailor the surface morphology, roughness, and oxidation states of species that can significantly influence the properties and surface bioactivity of the material. In this study, the LIPSS was applied to commercially pure titanium and evaluated for its ability to support calcium phosphate nucleation and growth in Simulated Body Fluid (SBF). Scanning Electron Microscopy (SEM) and Fast Fourier Transform (FFT) analysis confirmed the formation of well-defined periodic structures. Additional characterizations performed by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) revealed, after laser treatment of titanium, its increased surface roughness and oxidation levels, respectively. These features, when assessed after immersion in SBF, were associated with an improved potential biological performance of the nanostructured surface of the investigated material. The results demonstrated that LIPSS-treated titanium effectively promoted calcium phosphate growth, indicating its enhanced potential bioactivity. Overall, LIPSS nanostructuring presents a scalable and cost-effective strategy for engineering titanium surfaces with potential bioactive properties, supporting their promising application in advanced biomedical implants.
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Affiliation(s)
- Angela De Bonis
- Dipartimento di Scienze di Base e Applicate, Università Degli Studi Della Basilicata, Viale Dell'ateneo Lucano 10, 85100 Potenza, Italy
| | - Mariangela Curcio
- Dipartimento di Scienze di Base e Applicate, Università Degli Studi Della Basilicata, Viale Dell'ateneo Lucano 10, 85100 Potenza, Italy
| | - Agostino Galasso
- Dipartimento di Scienze di Base e Applicate, Università Degli Studi Della Basilicata, Viale Dell'ateneo Lucano 10, 85100 Potenza, Italy
| | - Nicola Caggiano
- Dipartimento di Chimica, Università Degli Studi di Bari, Via Orabona 4, 70125 Bari, Italy
| | - Antonio Lettino
- IMAA-CNR, Tito Scalo, Zona Industriale, 85050 Potenza, Italy
| | - Patrizia Dolce
- ISM-CNR, FemtoLAB, Tito Scalo, Zona Industriale, 85050 Potenza, Italy
| | - Donato Mollica
- ISM-CNR, FemtoLAB, Tito Scalo, Zona Industriale, 85050 Potenza, Italy
| | - Maria Lucia Pace
- ISM-CNR, FemtoLAB, Tito Scalo, Zona Industriale, 85050 Potenza, Italy
| | - Antonio Santagata
- ISM-CNR, FemtoLAB, Tito Scalo, Zona Industriale, 85050 Potenza, Italy
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2
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Liu X, Huang C, Liu H, Liu D, Yao P, Zou B, Zhu H, Wang Z, Xu L, Huang S. Laser-Based Two-Step Fabrication Method of Near-Damage-Free Controllably Superhydrophobic Antireflection Micronano Structures of Monocrystalline Silicon. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2025; 41:10539-10551. [PMID: 40248852 DOI: 10.1021/acs.langmuir.5c00559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2025]
Abstract
Ordered and hierarchical micronano hybrid structures are crucial for both antireflection and superhydrophobicity. However, during the laser processing of micronano structures, achieving precise size control and minimizing damage remain challenging. This study proposed a novel laser-based two-step method combining laser-assisted waterjet processing of near-damage-free micrometer-scale V-grooves and femtosecond laser-induced nanoscale periodic surface structures. Using models previously developed by the authors to predict V-groove depth and width, the antireflection and hydrophobic properties of the structures can be flexibly controlled. The fabricated micronano structure exhibits significantly lower oxidation compared with traditional laser processing, along with remarkable antireflectivity, achieving a minimum reflectivity of 4.6% in 300-1100 nm. Additionally, the hierarchical structures exhibit superhydrophobicity, with a maximum contact angle of 163.7 ± 0.82° and a minimum sliding angle of 2.62 ± 0.06°. Through comparative analysis on the micrometer structures, it is deeply revealed that the mechanisms of antireflection enhancement and hydrophobicity improvement of the micronano structures are that the ordered, hierarchical design traps light and creates a refractive index gradient, while the three-level micronano structure effectively reduces the contact area of droplets. The new laser-based two-step method proposed in this study offers both theoretical and practical significance for achieving controllable, low-damage processing of micronano structured functional surfaces.
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Affiliation(s)
- Xuefei Liu
- Centre for Advanced Jet Engineering Technology (CaJET), Key Laboratory of High-efficiency and Clean Mechanical Manufacture (Ministry of Education), National Experimental Teaching Demonstration Center for Mechanical Engineering (Shandong University), School of Mechanical Engineering, Shandong University, Jinan 250061, China
| | - Chuanzhen Huang
- School of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, China
| | - Hanlian Liu
- Centre for Advanced Jet Engineering Technology (CaJET), Key Laboratory of High-efficiency and Clean Mechanical Manufacture (Ministry of Education), National Experimental Teaching Demonstration Center for Mechanical Engineering (Shandong University), School of Mechanical Engineering, Shandong University, Jinan 250061, China
| | - Dun Liu
- Centre for Advanced Jet Engineering Technology (CaJET), Key Laboratory of High-efficiency and Clean Mechanical Manufacture (Ministry of Education), National Experimental Teaching Demonstration Center for Mechanical Engineering (Shandong University), School of Mechanical Engineering, Shandong University, Jinan 250061, China
| | - Peng Yao
- Centre for Advanced Jet Engineering Technology (CaJET), Key Laboratory of High-efficiency and Clean Mechanical Manufacture (Ministry of Education), National Experimental Teaching Demonstration Center for Mechanical Engineering (Shandong University), School of Mechanical Engineering, Shandong University, Jinan 250061, China
| | - Bin Zou
- Centre for Advanced Jet Engineering Technology (CaJET), Key Laboratory of High-efficiency and Clean Mechanical Manufacture (Ministry of Education), National Experimental Teaching Demonstration Center for Mechanical Engineering (Shandong University), School of Mechanical Engineering, Shandong University, Jinan 250061, China
| | - Hongtao Zhu
- Centre for Advanced Jet Engineering Technology (CaJET), Key Laboratory of High-efficiency and Clean Mechanical Manufacture (Ministry of Education), National Experimental Teaching Demonstration Center for Mechanical Engineering (Shandong University), School of Mechanical Engineering, Shandong University, Jinan 250061, China
| | - Zhen Wang
- School of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, China
| | - Longhua Xu
- School of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, China
| | - Shuiquan Huang
- School of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, China
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3
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Zhang Y, Xu S, Cui EN, Yu L, Wang Z. Research and Application Progress of Laser-Processing Technology in Diamond Micro-Fabrication. MICROMACHINES 2024; 15:547. [PMID: 38675358 PMCID: PMC11052283 DOI: 10.3390/mi15040547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2024] [Revised: 04/15/2024] [Accepted: 04/15/2024] [Indexed: 04/28/2024]
Abstract
Laser-processing technology has been widely used in the ultra-precision machining of diamond materials. It has the advantages of high precision and high efficiency, especially in the field of super-hard materials and high-precision parts manufacturing. This paper explains the fundamental principles of diamond laser processing, introduces the interaction mechanisms between various types of lasers and diamond materials, focuses on analyzing the current development status of various modes of laser processing of diamond, briefly discusses the relevant applications in diamond cutting, micro-hole forming, and micro-groove machining, etc., and finally discusses the issues, challenges, and potential future advancements of laser technology in the field of diamond processing at this point.
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Affiliation(s)
| | - Shuai Xu
- College of Intelligent System Science and Engineering, Shenyang University, Shenyang 110044, China; (Y.Z.); (L.Y.)
| | - E-Nuo Cui
- College of Intelligent System Science and Engineering, Shenyang University, Shenyang 110044, China; (Y.Z.); (L.Y.)
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Zhang D, Chen T, Shen T, Zhang Y, He Y, Si J, Hou X. Sub-diffraction limited nanogroove fabrication of 30 nm features on diamond films using 800 nm femtosecond laser irradiation. Heliyon 2024; 10:e24240. [PMID: 38304800 PMCID: PMC10831597 DOI: 10.1016/j.heliyon.2024.e24240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Revised: 11/28/2023] [Accepted: 01/04/2024] [Indexed: 02/03/2024] Open
Abstract
By controlling the 800 nm fs laser energy and applying an isopropyl alcohol environment, controlled sub-diffraction limited lithography with a characteristic structure of approximately 30 nm was achieved on the surface of diamond films, and diamond gratings with a period of 200 nm were fabricated. The fabrication of single grooves with a feature size of 30 nm demonstrates the potential for patterning periodic or nonperiodic structures, and the fabrication of 200 nm periodic grating structures demonstrates the ability of the technique to withstand laser proximity effects. This enhances the technology of diamond film nanofabrication and broadens its potential applications in areas such as optoelectronics and biology.
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Affiliation(s)
- Daqi Zhang
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Tao Chen
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Tianlun Shen
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Yu Zhang
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Yingsong He
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Jinhai Si
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Xun Hou
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
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5
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Dong X, Wei Z, Wang T, An Y. Insulator-to-metal transition in the black diamond from molecular-dynamics-Landauer method. OPTICS EXPRESS 2024; 32:3826-3834. [PMID: 38297595 DOI: 10.1364/oe.515361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 01/10/2024] [Indexed: 02/02/2024]
Abstract
The critical condition and mechanism of the insulator-to-metal transition (IMT) for the black diamond were studied by the molecular-dynamics-Landauer method. The IMT will occur at sufficiently high contents of vacancies in the diamond. The critical concentration of vacancies for the IMT might be between V:C143 (0.69%) and V:C127 (0.78%). At a low concentration of vacancies (below 0.69%), the intermediate band (IB) consists of a filled band and a separate empty band, which makes the material to be an insulator. The IMT of the black diamond is due to the mergence between the two isolated IBs when the concentration of vacancies is high, and the merged IB is partially filled by electrons. The distribution of vacancies also influences the IMT of the black diamond.
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6
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Chemin A, Levine I, Rusu M, Vaujour R, Knittel P, Reinke P, Hinrichs K, Unold T, Dittrich T, Petit T. Surface-Mediated Charge Transfer of Photogenerated Carriers in Diamond. SMALL METHODS 2023; 7:e2300423. [PMID: 37596059 DOI: 10.1002/smtd.202300423] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 06/20/2023] [Indexed: 08/20/2023]
Abstract
Solvated electrons are highly reductive chemical species whose chemical properties remain largely unknown. Diamond materials are proposed as a promising emitter of solvated electrons and visible light excitation would enable solar-driven CO2 or N2 reductions reactions in aqueous medium. But sub-bandgap excitation remains challenging. In this work, the role of surface states on diamond materials for charge separation and emission in both gaseous and aqueous environments from deep UV to visible light excitation is elucidated. Four different X-ray and UV-vis spectroscopy methods are applied to diamond materials with different surface termination, doping and crystallinity. Surface states are found to dominate sub-bandgap charge transfer. However, the surface charge separation is drastically reduced for boron-doped diamond due to a very high density of bulk defects. In a gaseous atmosphere, the oxidized diamond surface maintains a negative electron affinity, allowing charge emission, due to remaining hydrogenated and hydroxylated groups. In an aqueous electrolyte, a photocurrent for illumination down to 3.5 eV is observed for boron-doped nanostructured diamond, independent of the surface termination. This study opens new perspectives on photo-induced interfacial charge transfer processes from metal-free semiconductors such as diamonds.
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Affiliation(s)
- Arsène Chemin
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, DE, Germany
| | - Igal Levine
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, DE, Germany
| | - Marin Rusu
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, DE, Germany
| | - Rémi Vaujour
- École Normale Supérieure de Lyon, Lyon, 69342, France
| | - Peter Knittel
- Fraunhofer-Institut für Angewandte Festkörperphysik Freiburg, 79108, Freiburg, DE, Germany
| | - Philipp Reinke
- Fraunhofer-Institut für Angewandte Festkörperphysik Freiburg, 79108, Freiburg, DE, Germany
| | - Karsten Hinrichs
- Leibniz-Institut für Analytische Wissenschaften-ISAS-e.V., 12489, Berlin, DE, Germany
| | - Thomas Unold
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, DE, Germany
| | - Thomas Dittrich
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, DE, Germany
| | - Tristan Petit
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, DE, Germany
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7
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Gurbatov SO, Borodaenko YM, Mitsai EV, Modin E, Zhizhchenko AY, Cherepakhin AB, Shevlyagin AV, Syubaev SA, Porfirev AP, Khonina SN, Yelisseyev AP, Lobanov SI, Isaenko LI, Gurevich EL, Kuchmizhak AA. Laser-Induced Periodic Surface Structures on Layered GaSe Crystals: Structural Coloring and Infrared Antireflection. J Phys Chem Lett 2023; 14:9357-9364. [PMID: 37820389 DOI: 10.1021/acs.jpclett.3c02547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
We study structural and morphological transformations caused by multipulse femtosecond-laser exposure of Bridgman-grown ϵ-phase GaSe crystals, a van der Waals semiconductor promising for nonlinear optics and optoelectronics. We unveil, for the first time, the laser-driven self-organization regimes in GaSe allowing the formation of regular laser-induced periodic surface structures (LIPSSs) that originate from interference of the incident radiation and interface surface plasmon waves. LIPSSs formation causes transformation of the near-surface layer to amorphous Ga2Se3 at negligible oxidation levels, evidenced from comprehensive structural characterization. LIPSSs imprinted on both output crystal facets provide a 1.2-fold increase of the near-IR transmittance, while the ability to control local periodicity by processing parameters enables multilevel structural color marking of the crystal surface. Our studies highlight direct fs-laser patterning as a multipurpose application-ready technology for precise nanostructuring of promising van der Waals semiconductors, whose layered structure restricts application of common nanofabrication approaches.
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Affiliation(s)
- S O Gurbatov
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
- Far Eastern Federal University, Vladivostok 690950 Russia
| | - Yu M Borodaenko
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
| | - E V Mitsai
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
| | - E Modin
- CIC NanoGUNE BRTA, Avda Tolosa 76, 20018 Donostia-San Sebastian, Spain
| | - A Yu Zhizhchenko
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
| | - A B Cherepakhin
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
| | - A V Shevlyagin
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
| | - S A Syubaev
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
- IPSI RAS-Branch of the FSRC "Crystallography and Photonics" RAS, 443001 Samara, Russia
| | - A P Porfirev
- IPSI RAS-Branch of the FSRC "Crystallography and Photonics" RAS, 443001 Samara, Russia
- Scientific Research Laboratory of Automated Systems of Scientific Research, Samara National Research University, Samara 443086, Russia
| | - S N Khonina
- IPSI RAS-Branch of the FSRC "Crystallography and Photonics" RAS, 443001 Samara, Russia
- Scientific Research Laboratory of Automated Systems of Scientific Research, Samara National Research University, Samara 443086, Russia
| | - A P Yelisseyev
- Laboratory of Crystal Growth, V.S. Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090, Russia
- Laboratory of Functional Materials, Novosibirsk State University, Novosibirsk 630090, Russia
| | - S I Lobanov
- Laboratory of Crystal Growth, V.S. Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090, Russia
- Laboratory of Functional Materials, Novosibirsk State University, Novosibirsk 630090, Russia
| | - L I Isaenko
- Laboratory of Crystal Growth, V.S. Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090, Russia
- Laboratory of Functional Materials, Novosibirsk State University, Novosibirsk 630090, Russia
| | - E L Gurevich
- Laser Center (LFM), University of Applied Sciences Münster, Stegerwaldstraße 39, 48565 Steinfurt, Germany
| | - A A Kuchmizhak
- Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 Russia
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Shuleiko D, Zabotnov S, Sokolovskaya O, Poliakov M, Volkova L, Kunkel T, Kuzmin E, Danilov P, Kudryashov S, Pepelayev D, Kozyukhin S, Golovan L, Kashkarov P. Hierarchical Surface Structures and Large-Area Nanoscale Gratings in As 2S 3 and As 2Se 3 Films Irradiated with Femtosecond Laser Pulses. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4524. [PMID: 37444839 DOI: 10.3390/ma16134524] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Revised: 06/16/2023] [Accepted: 06/20/2023] [Indexed: 07/15/2023]
Abstract
Chalcogenide vitreous semiconductors (ChVSs) find application in rewritable optical memory storage and optically switchable infrared photonic devices due to the possibility of fast and reversible phase transitions, as well as high refractive index and transmission in the near- and mid-infrared spectral range. Formed on such materials, laser-induced periodic surface structures (LIPSSs), open wide prospects for increasing information storage capacity and create polarization-sensitive optical elements of infrared photonics. In the present work, a possibility to produce LIPSSs under femtosecond laser irradiation (pulse duration 300 fs, wavelength 515 nm, repetition rate up to 2 kHz, pulse energy ranged 0.03 to 0.5 μJ) is demonstrated on a large (up to 5 × 5 mm2) area of arsenic sulfide (As2S3) and arsenic selenide (As2Se3) ChVS films. Scanning electron and atomic force microscopy revealed that LIPSSs with various periods (170-490 nm) and orientations can coexist within the same irradiated region as a hierarchical structure, resulting from the interference of various plasmon polariton modes generated under intense photoexcitation of nonequilibrium carriers within the film. The depth of the structures varied from 30 to 100 nm. The periods and orientations of the formed LIPSSs were numerically simulated using the Sipe-Drude approach. A good agreement of the calculations with the experimental data was achieved.
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Affiliation(s)
- Dmitrii Shuleiko
- Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
| | - Stanislav Zabotnov
- Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
| | - Olga Sokolovskaya
- Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
| | - Maksim Poliakov
- Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, 16A Nagatinskaya St., 119991 Moscow, Russia
| | - Lidiya Volkova
- Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, 16A Nagatinskaya St., 119991 Moscow, Russia
| | - Tatiana Kunkel
- Moscow Institute of Physics and Technology, 9 Institutskiy Per., 141701 Dolgoprudny, Russia
| | - Evgeny Kuzmin
- Lebedev Physical Institute, The Russian Academy of Science, 53 Leninsky Avenue, 119991 Moscow, Russia
| | - Pavel Danilov
- Lebedev Physical Institute, The Russian Academy of Science, 53 Leninsky Avenue, 119991 Moscow, Russia
| | - Sergey Kudryashov
- Lebedev Physical Institute, The Russian Academy of Science, 53 Leninsky Avenue, 119991 Moscow, Russia
| | - Dmitrii Pepelayev
- Institute of Advanced Materials and Technologies, National Research University of Electronic Technology, 1 Shokina Sq., 124498 Zelenograd, Russia
| | - Sergey Kozyukhin
- Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky Avenue, 119991 Moscow, Russia
| | - Leonid Golovan
- Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
| | - Pavel Kashkarov
- Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
- National Research Centre "Kurchatov Institute", 1 Akademika Kurchatova Sq., 123182 Moscow, Russia
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9
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Dong X, Wang T, Lu Z, An Y, Wang Y. Computational design of a reliable intermediate-band photovoltaic absorber based on diamond. OPTICS EXPRESS 2023; 31:18227-18239. [PMID: 37381537 DOI: 10.1364/oe.491398] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Accepted: 05/04/2023] [Indexed: 06/30/2023]
Abstract
To reduce the wide bandgap of diamond and expand its applications in the photovoltaic fields, a diamond-based intermediate-band (IB) material C-Ge-V alloy was designed by first-principles calculations. By replacing some C with Ge and V in the diamond, the wide bandgap of the diamond can be reduced sharply and a reliable IB, which is mainly formed by the d states of V, can be formed in the bandgap. With the increase of Ge content, the total bandgap of the C-Ge-V alloy will be reduced and close to the optimal value of an IB material. At a relatively low atomic concentration of Ge (below 6.25%), the IB formed in the bandgap is partially filled and varies little with the concentration of Ge. When further increasing the content of Ge, the IB moves close to the conduction band and the electron filling in the IB increases. The 18.75% content of Ge might be the limitation to form an IB material, and the optimal content of Ge should be between 12.5% and 18.75%. Compared with the content of Ge, the distribution of Ge has a minor effect on the band structure of the material. The C-Ge-V alloy shows strong absorption for the sub-bandgap energy photons, and the absorption band generates a red-shift with the increase of Ge. This work will further expand the applications of diamond and be helpful to develop an appropriate IB material.
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10
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Salimon IA, Zharkova EV, Averchenko AV, Kumar J, Somov P, Abbas OA, Lagoudakis PG, Mailis S. Laser-Synthesized 2D-MoS 2 Nanostructured Photoconductors. MICROMACHINES 2023; 14:mi14051036. [PMID: 37241659 DOI: 10.3390/mi14051036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Revised: 05/08/2023] [Accepted: 05/09/2023] [Indexed: 05/28/2023]
Abstract
The direct laser synthesis of periodically nanostructured 2D transition metal dichalcogenide (2D-TMD) films, from single source precursors, is presented here. Laser synthesis of MoS2 and WS2 tracks is achieved by localized thermal dissociation of Mo and W thiosalts, caused by the strong absorption of continuous wave (c.w.) visible laser radiation by the precursor film. Moreover, within a range of irradiation conditions we have observed occurrence of 1D and 2D spontaneous periodic modulation in the thickness of the laser-synthesized TMD films, which in some cases is so extreme that it results in the formation of isolated nanoribbons with a width of ~200 nm and a length of several micrometers. The formation of these nanostructures is attributed to the effect that is known as laser-induced periodic surface structures (LIPSS), which is caused by self-organized modulation of the incident laser intensity distribution due to optical feedback from surface roughness. We have fabricated two terminal photoconductive detectors based on nanostructured and continuous films and we show that the nanostructured TMD films exhibit enhanced photo-response, with photocurrent yield increased by three orders of magnitude as compared to their continuous counterparts.
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Affiliation(s)
- Igor A Salimon
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Ekaterina V Zharkova
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Aleksandr V Averchenko
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Jatin Kumar
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Pavel Somov
- Center for Energy Science and Technology (CEST), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Omar A Abbas
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Pavlos G Lagoudakis
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Sakellaris Mailis
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
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11
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Jiang Q, Zhang Y, Xu Y, Zhang S, Feng D, Jia T, Sun Z, Qiu J. Extremely High-Quality Periodic Structures on ITO Film Efficiently Fabricated by Femtosecond Pulse Train Output from a Frequency-Doubled Fabry-Perot Cavity. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091510. [PMID: 37177054 PMCID: PMC10179915 DOI: 10.3390/nano13091510] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Revised: 04/21/2023] [Accepted: 04/26/2023] [Indexed: 05/15/2023]
Abstract
This study developed a novel frequency-doubled Fabry-Perot cavity method based on a femtosecond laser of 1030 nm, 190 fs, 1 mJ, and 1 kHz. The time interval (60-1000 ps) and attenuation ratio (0.5-0.9) between adjacent sub-pulses of the 515 nm pulse train were able to be easily adjusted, while the efficiency was up to 50% and remained unchanged. Extremely high-quality low-spatial-frequency LIPSS (LSFL) was efficiently fabricated on an indium tin oxide (ITO) film using a pulse train with a time interval of 150 ps and attenuation ratio of 0.9 focused with a cylindrical lens. Compared with the LSFL induced by the primary Gaussian pulse, the uniformity of the LSFL period was enhanced from 481 ± 41 nm to 435 ± 8 nm, the divergence of structural orientation angle was reduced from 15.6° to 3.7°, and the depth was enhanced from 74.21 ± 14.35 nm to 150.6 ± 8.63 nm. The average line edge roughness and line height roughness were only 7.34 nm and 2.06 nm, respectively. The depths and roughness values were close to or exceeded those of resist lines made by the interference lithography. Compared with the common Fabry-Perot cavity, the laser energy efficiency of the pulse trains and manufacturing efficiency were enhanced by factors of 19 and 25. A very colorful "lotus" pattern with a size of 30×28 mm2 was demonstrated, which was covered with high-quality LSFLs fabricated by a pulse train with optimized laser parameters. Pulse trains can efficiently enhance and prolong the excitation of surface plasmon polaritons, inhibit deposition particles, depress ablation residual heat and thermal shock waves, and eliminate high-spatial-frequency LIPSS formed on LSFL, therefore, producing extremely high-quality LSFL on ITO films.
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Affiliation(s)
- Qilin Jiang
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China
| | - Yuchan Zhang
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China
| | - Yufeng Xu
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China
| | - Shian Zhang
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China
| | - Donghai Feng
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China
| | - Tianqing Jia
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Zhenrong Sun
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China
| | - Jianrong Qiu
- State Key Laboratory of Optical Instrumentation, Zhejiang University, Hangzhou 310027, China
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12
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Mastellone M, Bolli E, Valentini V, Orlando S, Lettino A, Polini R, Buijnsters JG, Bellucci A, Trucchi DM. Surface Nanotexturing of Boron-Doped Diamond Films by Ultrashort Laser Pulses. MICROMACHINES 2023; 14:389. [PMID: 36838089 PMCID: PMC9959392 DOI: 10.3390/mi14020389] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 01/25/2023] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
Polycrystalline boron-doped diamond (BDD) films were surface nanotextured by femtosecond pulsed laser irradiation (100 fs duration, 800 nm wavelength, 1.44 J cm-2 single pulse fluence) to analyse the evolution of induced alterations on the surface morphology and structural properties. The aim was to identify the occurrence of laser-induced periodic surface structures (LIPSS) as a function of the number of pulses released on the unit area. Micro-Raman spectroscopy pointed out an increase in the graphite surface content of the films following the laser irradiation due to the formation of ordered carbon sites with respect to the pristine sample. SEM and AFM surface morphology studies allowed the determination of two different types of surface patterning: narrow but highly irregular ripples without a definite spatial periodicity or long-range order for irradiations with relatively low accumulated fluences (<14.4 J cm-2) and coarse but highly regular LIPSS with a spatial periodicity of approximately 630 nm ± 30 nm for higher fluences up to 230.4 J cm-2.
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Affiliation(s)
- Matteo Mastellone
- CNR-ISM, DiaTHEMA Lab, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy
| | - Eleonora Bolli
- CNR-ISM, DiaTHEMA Lab, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy
| | - Veronica Valentini
- CNR-ISM, DiaTHEMA Lab, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy
| | - Stefano Orlando
- CNR-ISM, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Tito, Italy
| | - Antonio Lettino
- Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma ‘Tor Vergata’, 00133 Rome, Italy
| | | | - Josephus Gerardus Buijnsters
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
| | - Alessandro Bellucci
- CNR-ISM, DiaTHEMA Lab, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy
| | - Daniele Maria Trucchi
- CNR-ISM, DiaTHEMA Lab, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy
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13
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Santagata A, Pace ML, Bellucci A, Mastellone M, Bolli E, Valentini V, Orlando S, Sani E, Failla S, Sciti D, Trucchi DM. Enhanced and Selective Absorption of Molybdenum Nanostructured Surfaces for Concentrated Solar Energy Applications. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8333. [PMID: 36499821 PMCID: PMC9741426 DOI: 10.3390/ma15238333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Revised: 11/11/2022] [Accepted: 11/18/2022] [Indexed: 06/17/2023]
Abstract
Surfaces of commercial molybdenum (Mo) plates have been textured by fs-laser treatments with the aim to form low-cost and efficient solar absorbers and substrates for thermionic cathodes in Concentrated Solar Power conversion devices. Morphological (SEM and AFM), optical (spectrophotometry), and structural (Raman spectroscopy) properties of the samples treated at different laser fluences (from 1.8 to 14 J/cm2) have been characterized after the laser treatments and also following long thermal annealing for simulating the operating conditions of thermionic converters. A significant improvement of the solar absorptance and selectivity, with a maximum value of about four times higher than the pristine sample at a temperature of 800 K, has been detected for sample surfaces treated at intermediate fluences. The effects observed have been related to the light trapping capability of the laser-induced nanotexturing, whereas a low selectivity, together with a high absorptance, could be revealed when the highest laser fluence was employed due to a significant presence of oxide species. The ageing process confirms the performance improvement shown when treated samples are used as solar absorbers, even though, due to chemical modification occurring at the surface, a decrease of the solar absorptance takes place. Interestingly, the sample showing the highest quantity of oxides preserves more efficiently the laser texturing. The observation of this behaviour allows to extend the applicability of the laser treatments since, by further nanostructuring of the Mo oxides, it could be beneficial also for sensing applications.
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Affiliation(s)
- Antonio Santagata
- CNR-ISM, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Tito Scalo, Italy
| | - Maria Lucia Pace
- CNR-ISM, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Tito Scalo, Italy
| | - Alessandro Bellucci
- CNR-ISM, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, (Rome), Italy
| | - Matteo Mastellone
- CNR-ISM, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, (Rome), Italy
| | - Eleonora Bolli
- CNR-ISM, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, (Rome), Italy
| | - Veronica Valentini
- CNR-ISM, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, (Rome), Italy
| | - Stefano Orlando
- CNR-ISM, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Tito Scalo, Italy
| | - Elisa Sani
- CNR-INO, Largo Enrico Fermi, 6, 50125 Florence, Italy
| | | | | | - Daniele Maria Trucchi
- CNR-ISM, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, (Rome), Italy
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14
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Abdelmalek A, Kotsedi L, Bedrane Z, Amara EH, Girolami M, Maaza M. Optical and Thermal Behavior of Germanium Thin Films under Femtosecond Laser Irradiation. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3786. [PMID: 36364560 PMCID: PMC9657278 DOI: 10.3390/nano12213786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 10/23/2022] [Accepted: 10/25/2022] [Indexed: 06/16/2023]
Abstract
In this study, we theoretically investigate the response of a germanium thin film under femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material-specific optical properties such as dielectric function and reflectivity, were calculated during the irradiation using an extended two-temperature model coupled with the carrier density rate equation and the Drude model. Melting and ablation fluence thresholds were also predicted, resulting in 0.14 J cm-2 and 0.35 J cm-2, respectively. An ultrafast change in both optical and thermal properties was detected upon laser irradiation. Results also indicate that thermal melting occurs after germanium takes on a metallic character during irradiation, and that the impact ionization process may have a critical role in the laser-induced thermal effect. Therefore, we suggest that the origin of the thermal modification of germanium surface under femtosecond laser irradiation is mostly due the impact ionization process and that its effect becomes more important when increasing the laser fluence.
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Affiliation(s)
- Ahmed Abdelmalek
- Theoretical Physics Laboratory, Physics Department, Sciences Faculty, Tlemcen University, Tlemcen 13000, Algeria
| | - Lebogang Kotsedi
- Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, Old Faure Road, 7129, Somerset West P.O. Box 722, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, Pretoria P.O. Box 392, South Africa
| | - Zeyneb Bedrane
- Theoretical Physics Laboratory, Physics Department, Sciences Faculty, Tlemcen University, Tlemcen 13000, Algeria
| | - El-Hachemi Amara
- Centre de Développement des Technologies Avancées, CDTA, Baba-Hassen 16303, Algeria
| | - Marco Girolami
- Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM—CNR), DiaTHEMA Lab, Sede Secondaria di Montelibretti, Strada Provinciale 35D, 9, Montelibretti, 00010 Roma, Italy
| | - Malik Maaza
- Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, Old Faure Road, 7129, Somerset West P.O. Box 722, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, Pretoria P.O. Box 392, South Africa
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15
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Sun XC, Liu XQ, Sun ZJ, Li SX, Zheng JX, Xia H, Wang L. Wafer-scale high aspect-ratio sapphire periodic nanostructures fabricated by self-modulated femtosecond laser hybrid technology. OPTICS EXPRESS 2022; 30:32244-32255. [PMID: 36242290 DOI: 10.1364/oe.463575] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Accepted: 08/08/2022] [Indexed: 06/16/2023]
Abstract
Sapphire nanostructures with a high aspect-ratio have broad applications in photoelectronic devices, which are difficult to be fabricated due to the properties of high transparency and hardness, remarkable thermal and chemical stability. Although the phenomenon of laser-induced periodic surface structures (LIPSS) provides an extraordinary idea for surface nanotexturing, it suffers from the limitation of the small depth of the nanostructures. Here, a high-efficiency self-modulated femtosecond laser hybrid technology was proposed to fabricate nanostructures with high aspect-ratios on the sapphire surface, which was combined backside laser modification and subsequent wet etching. Due to the refractive index mismatch, the focal length of the laser could be elongated when focused inside sapphire. Thus, periodic nanostructures with high-quality aspect ratios of more than 55 were prepared on the sapphire surface by using this hybrid fabrication method. As a proof-of-concept, wafer-scale (∼2 inches) periodic nanostripes with a high aspect-ratio were realized on a sapphire surface, which possesses unique diffractive properties compared to typical shallow gratings. The results indicate that the self-modulated femtosecond laser hybrid technology is an efficient and versatile technique for producing high aspect-ratio nanostructures on hard and transparent materials, which would propel the potential applications in optics and surface engineering, sensing, etc.
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16
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Huang J, Xu K, Hu J, Yuan D, Li J, Qiao J, Xu S. Self-Aligned Plasmonic Lithography for Maskless Fabrication of Large-Area Long-Range Ordered 2D Nanostructures. NANO LETTERS 2022; 22:6223-6228. [PMID: 35849492 DOI: 10.1021/acs.nanolett.2c01740] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
This paper proposes a one-step maskless 2D nanopatterning approach named self-aligned plasmonic lithography (SPL) by line-shaped ultrafast laser ablation under atmospheric conditions for the first time. Through a theoretical calculation of electric field and experimental verification, we proved that homogeneous interference of laser-excited surface plasmon polaritons (SPPs) can be achieved and used to generate long-range ordered 2D nanostructures in a self-aligned way over a wafer-sized area within several minutes. Moreover, the self-aligned nanostructures can be freely transferred between embossed nanopillars and engraved nanoholes by modulating the excitation intensity of SPPs interference through altering the incident laser energy. The SPL technique exhibits further controllability in the shape, orientation, and period of achievable nanopatterns on a wide range of semiconductors and metals by tuning processing parameters. Nanopatterned films can further act as masks to transfer structures into other bulk materials, as demonstrated in silica.
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Affiliation(s)
- Jiaxu Huang
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China
| | - Kang Xu
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China
| | - Jin Hu
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China
| | - Dandan Yuan
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China
| | - Jun Li
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China
| | - Jingyu Qiao
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China
| | - Shaolin Xu
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China
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17
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Xie X, Li Y, Wang G, Bai Z, Yu Y, Wang Y, Ding Y, Lu Z. Femtosecond Laser Processing Technology for Anti-Reflection Surfaces of Hard Materials. MICROMACHINES 2022; 13:mi13071084. [PMID: 35888901 PMCID: PMC9322106 DOI: 10.3390/mi13071084] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/18/2022] [Revised: 07/05/2022] [Accepted: 07/06/2022] [Indexed: 01/25/2023]
Abstract
The anti-reflection properties of hard material surfaces are of great significance in the fields of infrared imaging, optoelectronic devices, and aerospace. Femtosecond laser processing has drawn a lot of attentions in the field of optics as an innovative, efficient, and green micro-nano processing method. The anti-reflection surface prepared on hard materials by femtosecond laser processing technology has good anti-reflection properties under a broad spectrum with all angles, effectively suppresses reflection, and improves light transmittance/absorption. In this review, the recent advances on femtosecond laser processing of anti-reflection surfaces on hard materials are summarized. The principle of anti-reflection structure and the selection of anti-reflection materials in different applications are elaborated upon. Finally, the limitations and challenges of the current anti-reflection surface are discussed, and the future development trend of the anti-reflection surface are prospected.
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Affiliation(s)
- Xiaofan Xie
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin 300401, China; (X.X.); (Z.B.); (Y.Y.); (Y.W.); (Z.L.)
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
| | - Yunfei Li
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin 300401, China; (X.X.); (Z.B.); (Y.Y.); (Y.W.); (Z.L.)
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300401, China
- National Demonstration Center for Experimental (Electronic and Communication Engineering) Education, Hebei University of Technology, Tianjin 300401, China
- Correspondence: (Y.L.); (G.W.); (Y.D.)
| | - Gong Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin 300401, China; (X.X.); (Z.B.); (Y.Y.); (Y.W.); (Z.L.)
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300401, China
- National Demonstration Center for Experimental (Electronic and Communication Engineering) Education, Hebei University of Technology, Tianjin 300401, China
- Correspondence: (Y.L.); (G.W.); (Y.D.)
| | - Zhenxu Bai
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin 300401, China; (X.X.); (Z.B.); (Y.Y.); (Y.W.); (Z.L.)
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300401, China
- National Demonstration Center for Experimental (Electronic and Communication Engineering) Education, Hebei University of Technology, Tianjin 300401, China
| | - Yu Yu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin 300401, China; (X.X.); (Z.B.); (Y.Y.); (Y.W.); (Z.L.)
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300401, China
- National Demonstration Center for Experimental (Electronic and Communication Engineering) Education, Hebei University of Technology, Tianjin 300401, China
| | - Yulei Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin 300401, China; (X.X.); (Z.B.); (Y.Y.); (Y.W.); (Z.L.)
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300401, China
- National Demonstration Center for Experimental (Electronic and Communication Engineering) Education, Hebei University of Technology, Tianjin 300401, China
| | - Yu Ding
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
- Correspondence: (Y.L.); (G.W.); (Y.D.)
| | - Zhiwei Lu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin 300401, China; (X.X.); (Z.B.); (Y.Y.); (Y.W.); (Z.L.)
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300401, China
- National Demonstration Center for Experimental (Electronic and Communication Engineering) Education, Hebei University of Technology, Tianjin 300401, China
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18
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Orsini A, Barettin D, Ercoli F, Rossi MC, Pettinato S, Salvatori S, Mezzi A, Polini R, Bellucci A, Mastellone M, Girolami M, Valentini V, Orlando S, Trucchi DM. Charge Transport Mechanisms of Black Diamond at Cryogenic Temperatures. NANOMATERIALS 2022; 12:nano12132253. [PMID: 35808088 PMCID: PMC9268584 DOI: 10.3390/nano12132253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2022] [Revised: 06/09/2022] [Accepted: 06/27/2022] [Indexed: 12/04/2022]
Abstract
Black diamond is an emerging material for solar applications. The femtosecond laser surface treatment of pristine transparent diamond allows the solar absorptance to be increased to values greater than 90% from semi-transparency conditions. In addition, the defects introduced by fs-laser treatment strongly increase the diamond surface electrical conductivity and a very-low activation energy is observed at room temperature. In this work, the investigation of electronic transport mechanisms of a fs-laser nanotextured diamond surface is reported. The charge transport was studied down to cryogenic temperatures, in the 30−300 K range. The samples show an activation energy of a few tens of meV in the highest temperature interval and for T < 50 K, the activation energy diminishes to a few meV. Moreover, thanks to fast cycles of measurement, we noticed that the black-diamond samples also seem to show a behavior close to ferromagnetic materials, suggesting electron spin influence over the transport properties. The mentioned properties open a new perspective in designing novel diamond-based biosensors and a deep knowledge of the charge-carrier transport in black diamond becomes fundamental.
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Affiliation(s)
- Andrea Orsini
- Università degli Studi Niccolò Cusano, 00166 Roma, Italy; (D.B.); (S.P.); (S.S.)
- Correspondence:
| | - Daniele Barettin
- Università degli Studi Niccolò Cusano, 00166 Roma, Italy; (D.B.); (S.P.); (S.S.)
| | - Federica Ercoli
- Università degli Studi Roma Tre, 00154 Roma, Italy; (F.E.); (M.C.R.)
| | | | - Sara Pettinato
- Università degli Studi Niccolò Cusano, 00166 Roma, Italy; (D.B.); (S.P.); (S.S.)
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
| | - Stefano Salvatori
- Università degli Studi Niccolò Cusano, 00166 Roma, Italy; (D.B.); (S.P.); (S.S.)
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
| | - Alessio Mezzi
- Istituto per lo Studio di Materiali Nanostrutturati, ISMN-CNR, 00015 Monterotondo Stazione, Italy;
| | - Riccardo Polini
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
- Università degli Studi di Roma “Tor Vergata”, 00133 Roma, Italy
| | - Alessandro Bellucci
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
| | - Matteo Mastellone
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
| | - Marco Girolami
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
| | - Veronica Valentini
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
| | - Stefano Orlando
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
| | - Daniele Maria Trucchi
- Istituto di Struttura della Materia, ISM-CNR, 00015 Monterotondo Stazione, Italy; (R.P.); (A.B.); (M.M.); (M.G.); (V.V.); (S.O.); (D.M.T.)
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19
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Lu M, Cheng K, Qin Z, Ju J, Liu J, Huo Y. Electromagnetic origin of femtosecond laser-induced periodic surface structures on GaP crystals. OPTICS EXPRESS 2022; 30:10152-10167. [PMID: 35299425 DOI: 10.1364/oe.452577] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 03/04/2022] [Indexed: 06/14/2023]
Abstract
The formations of different types of laser-induced periodic surface structures (LIPSS) on the surface of GaP crystals with different laser fluence are researched in experiments. The transition from the high spatial frequency LIPSS (HSFL) to the low spatial frequency LIPSS (LSFL) occurred as the number of the irradiated laser pulse increased. The finite difference time domain method combined with the holographic ablation model is used to simulate the LIPSS formation under the irradiation of multiple pulses. Different types of ripples are predicted by the electromagnetic approach. Results demonstrate that the electromagnetic origins of HSFL and LSFL are due to the interference of incident field and the scattering field under the multi-pulse irradiation.
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20
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He W, Zhao B, Yang J, Wen J, Wu H, Guo S, Bai L. Manipulation of Subwavelength Periodic Structures Formation on 4H-SiC Surface with Three Temporally Delayed Femtosecond Laser Irradiations. NANOMATERIALS 2022; 12:nano12050796. [PMID: 35269288 PMCID: PMC8912547 DOI: 10.3390/nano12050796] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Revised: 02/21/2022] [Accepted: 02/23/2022] [Indexed: 02/01/2023]
Abstract
Controlling laser-induced periodic surface structures on semiconductor materials is of significant importance for micro/nanophotonics. We here demonstrate a new approach to form the unusual structures on 4H-SiC crystal surface under irradiation of three collinear temporally delayed femtosecond laser beams (800 nm wavelength, 50 fs duration, 1 kHz repetition), with orthogonal linear polarizations. Different types of surface structures, two-dimensional arrays of square islands (670 nm periodicity) and one-dimensional ripple structures (678 nm periodicity) are found to uniformly distribute over the laser-exposed areas, both of which are remarkably featured by the low spatial frequency. By altering the time delay among three laser beams, we can flexibly control the transition between the two surface structures. The experimental results are well explained by a physical model of the thermally correlated actions among three laser-material interaction processes. This investigation provides a simple, flexible, and controllable processing approach for the large-scale assembly of complex functional nanostructures on bulk semiconductor materials.
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Affiliation(s)
- Wanlin He
- School of Science, Xi’an Shiyou University, Xi’an 710065, China; (W.H.); (J.W.); (H.W.); (S.G.); (L.B.)
| | - Bo Zhao
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
- Department of Electronic Information and Physics, Changzhi University, Changzhi 046011, China
| | - Jianjun Yang
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
- Correspondence:
| | - Junqing Wen
- School of Science, Xi’an Shiyou University, Xi’an 710065, China; (W.H.); (J.W.); (H.W.); (S.G.); (L.B.)
| | - Hua Wu
- School of Science, Xi’an Shiyou University, Xi’an 710065, China; (W.H.); (J.W.); (H.W.); (S.G.); (L.B.)
| | - Shaoli Guo
- School of Science, Xi’an Shiyou University, Xi’an 710065, China; (W.H.); (J.W.); (H.W.); (S.G.); (L.B.)
| | - Lihua Bai
- School of Science, Xi’an Shiyou University, Xi’an 710065, China; (W.H.); (J.W.); (H.W.); (S.G.); (L.B.)
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Mastellone M, Pace ML, Curcio M, Caggiano N, De Bonis A, Teghil R, Dolce P, Mollica D, Orlando S, Santagata A, Serpente V, Bellucci A, Girolami M, Polini R, Trucchi DM. LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives. MATERIALS (BASEL, SWITZERLAND) 2022; 15:1378. [PMID: 35207919 PMCID: PMC8880014 DOI: 10.3390/ma15041378] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2021] [Revised: 02/04/2022] [Accepted: 02/09/2022] [Indexed: 02/04/2023]
Abstract
With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on the surface of wide bandgap semiconductors (WBS) and dielectric materials. The role played by radiation surface electromagnetic waves as well as Surface Plasmon Polaritons in determining both Low and High Spatial Frequency LIPSS is briefly discussed, together with some experimental evidence. Non-conventional techniques for LIPSS formation are concisely introduced to point out the high technical possibility of enhancing the homogeneity of surface structures as well as tuning the electronic properties driven by point defects induced in WBS. Among these, double- or multiple-fs-pulse irradiations are shown to be suitable for providing further insight into the LIPSS process together with fine control on the formed surface structures. Modifications occurring by LIPSS on surfaces of WBS and dielectrics display high potentialities for their cross-cutting technological features and wide applications in which the main surface and electronic properties can be engineered. By these assessments, the employment of such nanostructured materials in innovative devices could be envisaged.
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Affiliation(s)
- Matteo Mastellone
- ISM-CNR, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy; (M.M.); (V.S.); (A.B.); (M.G.); (R.P.); (D.M.T.)
| | - Maria Lucia Pace
- ISM-CNR, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Potenza, Italy; (M.L.P.); (P.D.); (D.M.); (S.O.)
| | - Mariangela Curcio
- Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza, Italy; (M.C.); (N.C.); (A.D.B.); (R.T.)
| | - Nicola Caggiano
- Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza, Italy; (M.C.); (N.C.); (A.D.B.); (R.T.)
| | - Angela De Bonis
- Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza, Italy; (M.C.); (N.C.); (A.D.B.); (R.T.)
| | - Roberto Teghil
- Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza, Italy; (M.C.); (N.C.); (A.D.B.); (R.T.)
| | - Patrizia Dolce
- ISM-CNR, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Potenza, Italy; (M.L.P.); (P.D.); (D.M.); (S.O.)
| | - Donato Mollica
- ISM-CNR, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Potenza, Italy; (M.L.P.); (P.D.); (D.M.); (S.O.)
| | - Stefano Orlando
- ISM-CNR, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Potenza, Italy; (M.L.P.); (P.D.); (D.M.); (S.O.)
| | - Antonio Santagata
- ISM-CNR, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Potenza, Italy; (M.L.P.); (P.D.); (D.M.); (S.O.)
| | - Valerio Serpente
- ISM-CNR, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy; (M.M.); (V.S.); (A.B.); (M.G.); (R.P.); (D.M.T.)
| | - Alessandro Bellucci
- ISM-CNR, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy; (M.M.); (V.S.); (A.B.); (M.G.); (R.P.); (D.M.T.)
| | - Marco Girolami
- ISM-CNR, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy; (M.M.); (V.S.); (A.B.); (M.G.); (R.P.); (D.M.T.)
| | - Riccardo Polini
- ISM-CNR, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy; (M.M.); (V.S.); (A.B.); (M.G.); (R.P.); (D.M.T.)
- Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma ‘Tor Vergata’, 00133 Rome, Italy
| | - Daniele Maria Trucchi
- ISM-CNR, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy; (M.M.); (V.S.); (A.B.); (M.G.); (R.P.); (D.M.T.)
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