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Kang M, Lee DH, Kim J, Nam G, Baek S, Heo S, Noh Y, Chung DS. Boosting the Performance of Photomultiplication-Type Organic Photodiodes by Embedding CsPbBr 3 Perovskite Nanocrystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305349. [PMID: 38064157 PMCID: PMC10870029 DOI: 10.1002/advs.202305349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 11/17/2023] [Indexed: 02/17/2024]
Abstract
In this study, it is demonstrated that CsPbBr3 perovskite nanocrystals (NCs) can enhance the overall performances of photomultiplication-type organic photodiodes (PM-OPDs). The proposed approach enables the ionic-polarizable CsPbBr3 NCs to be evenly distributed throughout the depletion region of Schottky junction interface, allowing the entire trapped electrons within the depletion region to be stabilized, in contrast to previously reported interface-limited strategies. The optimized CsPbBr3 -NC-embedded poly(3-hexylthiophene-diyl)-based PM-OPDs exhibit exceptionally high external quantum efficiency, specific detectivity, and gain-bandwidth product of 2,840,000%, 3.97 × 1015 Jones, and 2.14 × 107 Hz, respectively. 2D grazing-incidence X-ray diffraction analyses and drift-diffusion simulations combined with temperature-dependent J-V characteristic analyses are conducted to investigate the physics behind the success of CsPbBr3 -NC-embedded PM-OPDs. The results show that the electrostatic interactions generated by the ionic polarization of NCs effectively stabilize the trapped electrons throughout the entire volume of the photoactive layer, thereby successfully increasing the effective energy depth of the trap states and allowing efficient PM mechanisms. This study demonstrates how a hybrid-photoactive-layer approach can further enhance PM-OPD when the functionality of inorganic inclusions meets the requirements of the target device.
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Affiliation(s)
- Mingyun Kang
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Dong Hyeon Lee
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Juhee Kim
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Geon‐Hee Nam
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Seyeon Baek
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Seongmin Heo
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Dae Sung Chung
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
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2
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Liu S, Teng Y, Zhang Z, Lai J, Hu Z, Zhang W, Zhang W, Zhu J, Wang X, Li Y, Zhao J, Zhang Y, Qiu S, Zhou W, Cao K, Chen Q, Kang L, Li Q. Interlayer Charge Transfer Induced Electrical Behavior Transition in 1D AgI@sSWCNT van der Waals Heterostructures. NANO LETTERS 2024; 24:741-747. [PMID: 38166145 DOI: 10.1021/acs.nanolett.3c04298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
The emergence of one-dimensional van der Waals heterostructures (1D vdWHs) opens up potential fields with unique properties, but precise synthesis remains a challenge. The utilization of mixed conductive types of carbon nanotubes as templates has imposed restrictions on the investigation of the electrical behavior and interlayer interaction of 1D vdWHs. In this study, we efficiently encapsulated silver iodide in high-purity semiconducting single-walled carbon nanotubes (sSWCNTs), forming 1D AgI@sSWCNT vdWHs. We characterized the semiconductor-metal transition and increased the carrier concentration of individual AgI@sSWCNTs via sensitive dielectric force microscopy and confirmed the results through electrical device tests. The electrical behavior transition was attributed to an interlayer charge transfer, as demonstrated by Kelvin probe force microscopy. Furthermore, we showed that this method of synthesizing 1D heterostructures can be extended to other metal halides. This work opens the door for the further exploration of the electrical properties of 1D vdWHs.
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Affiliation(s)
- Shuai Liu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
- School of Nano Science and Technology, University of Science and Technology of China, 96 Jinzhai Road, Hefei 230026, China
| | - Zhen Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Junqi Lai
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Wendi Zhang
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
| | - Wujun Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Juntong Zhu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of the Chinese Academy of Sciences, Beijing 100190, China
| | - Xiujun Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Yunfei Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Jintao Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
- School of Nano Science and Technology, University of Science and Technology of China, 96 Jinzhai Road, Hefei 230026, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Song Qiu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Wu Zhou
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of the Chinese Academy of Sciences, Beijing 100190, China
| | - Kecheng Cao
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Lixing Kang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Qingwen Li
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
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Choi D, Kwon H, Lee H, Lee KM, Park Y, Moon H, Yoo S. Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C 60/C 70:TAPC Hybrid Channel. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58673-58682. [PMID: 38051232 DOI: 10.1021/acsami.3c13498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C60 layer and a bulk-heterojunction layer of C70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C60 layer serves as the main carrier-transporting layer with high mobility, the C70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.
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Affiliation(s)
- Dongho Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Hyukyun Kwon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
- Samsung Electronics, Hwaseong-si, Gyeonggido 18448, Republic of Korea
| | - Haechang Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Kyu-Myung Lee
- Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Yongsup Park
- Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 02447, Republic of Korea
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Hanul Moon
- Department of Semiconductor & Department of Chemical Engineering (BK21 FOUR Graduate Program), Dong-A University, Busan 49315, Republic of Korea
| | - Seunghyup Yoo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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He S, Tang X, Deng Y, Yin N, Jin W, Lu X, Chen D, Wang C, Sun T, Chen Q, Jin Y. Anomalous efficiency elevation of quantum-dot light-emitting diodes induced by operational degradation. Nat Commun 2023; 14:7785. [PMID: 38012136 PMCID: PMC10682488 DOI: 10.1038/s41467-023-43340-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2023] [Accepted: 11/08/2023] [Indexed: 11/29/2023] Open
Abstract
Quantum-dot light-emitting diodes promise a new generation of high-performance and solution-processed electroluminescent light sources. Understanding the operational degradation mechanisms of quantum-dot light-emitting diodes is crucial for their practical applications. Here, we show that quantum-dot light-emitting diodes may exhibit an anomalous degradation pattern characterized by a continuous increase in electroluminescent efficiency upon electrical stressing, which deviates from the typical decrease in electroluminescent efficiency observed in other light-emitting diodes. Various in-situ/operando characterizations were performed to investigate the evolutions of charge dynamics during the efficiency elevation, and the alterations in electric potential landscapes in the active devices. Furthermore, we carried out selective peel-off-and-rebuild experiments and depth-profiling analyses to pinpoint the critical degradation site and reveal the underlying microscopic mechanism. The results indicate that the operation-induced efficiency increase results from the degradation of electron-injection capability at the electron-transport layer/cathode interface, which in turn leads to gradually improved charge balance. Our work provides new insights into the degradation of red quantum-dot light-emitting diodes and has far-reaching implications for the design of charge-injection interfaces in solution-processed light-emitting diodes.
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Affiliation(s)
- Siyu He
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Xiaoqi Tang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Yunzhou Deng
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China.
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Wangxiao Jin
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Xiuyuan Lu
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Desui Chen
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Chenyang Wang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China
| | - Tulai Sun
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
| | - Yizheng Jin
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, China.
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Ma Z, Sun Z, Yang H, Wang Z, Ren F, Yin N, Chen Q, Zhang Y, Li C, Chen L, Wang Q. Interface-Mediation-Enabled High-Performance Near-Infrared AgAuSe Quantum Dot Light-Emitting Diodes. J Am Chem Soc 2023. [PMID: 37910121 DOI: 10.1021/jacs.3c10214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Near-infrared (NIR) quantum dot (QD) light-emitting diodes (LEDs) (NIR-QLEDs) for recognition and tracking applications underpin the future of night-vision technology. However, the performance of environmentally benign materials and devices has lagged far behind that of their Pb-containing counterparts. In this study, we demonstrate the superior performance of NIR-QLEDs based on efficient AgAuSe QDs with contact interface mediation. Consequently, we reveal that using cysteamine-treated QD film contact heterointerfaces can effectively eliminate contact defects in devices and preserve their excellent emissive properties. Additionally, the dipole moment orientation of the coordinated additives is inverse of the heterojunction potential difference, simultaneously blocking electrons and enhancing hole injection in operando, optimizing the LED charge injection balance. These devices exhibit a high external quantum efficiency (EQE) and a power conversion efficiency (PCE) of 15.8 and 12.7% at 1046 nm, respectively, a sub-band gap turn-on voltage of 0.9 V, and a low current density (over 10% of the EQE from 0.0017 to 0.31 mA cm-2). These are the highest EQE and PCE values ever reported for environmentally benign NIR-QLEDs. The results of this study can provide a general strategy for the practical application of QDs in electroluminescent devices.
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Affiliation(s)
- Zhiwei Ma
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Ziqiang Sun
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Hongchao Yang
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Zhixuan Wang
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Feng Ren
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Yejun Zhang
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Chunyan Li
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Liwei Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Qiangbin Wang
- CAS Key Laboratory of Nano-Bio Interface, Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- College of Materials Sciences and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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Liu Q, Li L, Wu J, Wang Y, Yuan L, Jiang Z, Xiao J, Gu D, Li W, Tai H, Jiang Y. Organic photodiodes with bias-switchable photomultiplication and photovoltaic modes. Nat Commun 2023; 14:6935. [PMID: 37907460 PMCID: PMC10618528 DOI: 10.1038/s41467-023-42742-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 10/20/2023] [Indexed: 11/02/2023] Open
Abstract
The limited sensitivity of photovoltaic-type photodiodes makes it indispensable to use pre-amplifier circuits for effectively extracting electrical signals, especially when detecting dim light. Additionally, the photomultiplication photodiodes with light amplification function suffer from potential damages caused by high power consumption under strong light. In this work, by adopting the synergy strategy of thermal-induced interfacial structural traps and blocking layers, we develop a dual-mode visible-near infrared organic photodiode with bias-switchable photomultiplication and photovoltaic operating modes, exhibiting high specific detectivity (~1012 Jones) and fast response speed (0.05/3.03 ms for photomultiplication-mode; 8.64/11.14 μs for photovoltaic-mode). The device also delivers disparate external quantum efficiency in two optional operating modes, showing potential in simultaneously detecting dim and strong light ranging from ~10-9 to 10-1 W cm-2. The general strategy and working mechanism are validated in different organic layers. This work offers an attractive option to develop bias-switchable multi-mode organic photodetectors for various application scenarios.
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Affiliation(s)
- Qingxia Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Lingfeng Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Jiaao Wu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China.
| | - Liu Yuan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Zhi Jiang
- Innovative Center for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jianhua Xiao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Deen Gu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Weizhi Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China.
| | - Yadong Jiang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
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Zhao Y, Chen N, Deng B, Wu L, Wang S, Grandidier B, Proust J, Plain J, Xu T. Plasmonic-Enhanced Tunable Near-Infrared Photoresponse for Narrowband Organic Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49436-49446. [PMID: 37821424 DOI: 10.1021/acsami.3c11753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Near-infrared (NIR) narrowband organic photodetectors (OPDs) can be essential building blocks for emerging applications including wireless optical communication and light detection, but further improvement of their performances remains to be a great challenge. Herein, a light manipulation strategy combining solution-processable gold nanorings (AuNRs)-based hole transporting layer (HTL) and an optical microcavity is proposed to achieve high-performance NIR narrowband OPDs. Optical microcavities with a Fabry-Pérot resonator structure, guided by theoretical simulation, are coupled with PM6:BTP-eC9-based OPDs to exhibit highly tunable NIR selectivity. The further integration of AuNRs array with NIR-customized localized surface plasmon resonance in the HTL of the NIR narrowband OPDs enables evident NIR absorption enhancement, yielding a specific detectivity exceeding 1013 Jones (1.5 × 1012 Jones, calculated from noise spectral density) at 820 nm, along with a finely selective photoresponse (full width at half-maximum of 80 nm) and a 3-fold increase in photocurrent intensity. Finally, the practical application of our OPDs is demonstrated in an NIR communication system. These results reveal the great potential of an appropriate optical design for developing highly performing NIR narrowband OPDs.
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Affiliation(s)
- Yanglin Zhao
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
| | - Nan Chen
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
| | - Baozhong Deng
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
| | - Lifang Wu
- Materials Genome Institute, Shanghai University, 200444 Shanghai, China
| | - Shenghao Wang
- Materials Genome Institute, Shanghai University, 200444 Shanghai, China
| | - Bruno Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520─IEMN, 59000 Lille, France
| | - Julien Proust
- Light, Nanomaterials, Nanotechnologies (L2n), CNRS ERL 7004, University of Technology of Troyes, F-10004 Troyes, France
| | - Jérôme Plain
- Light, Nanomaterials, Nanotechnologies (L2n), CNRS ERL 7004, University of Technology of Troyes, F-10004 Troyes, France
| | - Tao Xu
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
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